全球新興非易失性存儲器市場 - 增長、趨勢、COVID-19 的影響和預測 (2023-2028)

新興的非易失性存儲器市場預計在預測期內 (2023-2028) 將以約 22.8% 的複合年增長率增長。

由於消費電子、企業和工業等廣泛的最終用戶行業對存儲設備的接受，非易失性存儲器的新興市場預計將顯著增長。

主要亮點

• 對高速訪問和低功耗的存儲設備的需求不斷增長，以及連接和可穿戴設備對非易失性存儲器的需求不斷增長，這些都是推動市場增長的主要因素。 然而，設計和製造非易失性存儲設備的高度複雜性預計將阻礙預測期內的市場增長。
• 經過幾年的發展，嵌入式非易失性存儲器技術已經相當成熟。 幾款基於 MRAM 的嵌入式設備將在 2021 年進入量產，包括 GreenWave 的 AI 處理器，採用來自 GlobalFoundries 的 eMRAM（22nm FDSOI），由 Numen 和 Gyrfalcon（TSMC 的 22nm ULL）設計和開發。包括 Edge AI Accelerator。
• 該領域研究活動的增加正在推動市場的增長。 例如，三星將在 2021 年推進其 14 納米工藝以支持專為提高寫入速度和密度而設計的閃存嵌入式 MRAM，並宣布改進其 MRAM 的 MTJ 功能。 此外，我們的目標是新的非易失性存儲器應用，例如可穿戴設備、微控制器和物聯網設備。
• COVID-19 大流行及其全球封鎖對內存市場產生了影響。 對筆記本電腦和數據中心的需求增長，但智能手機和汽車面臨放緩。 因此，內存需求相對平衡。 新興的非易失性存儲器市場正在數據中心市場中擴展，重點是利用 3D XPoint 的存儲類存儲器 (SCM) 應用，這不會對整個新興非易失性存儲器市場的發展產生負面影響。 2020年上半年因疫情造成的供應鏈中斷，到2020年下半年伊始基本得到解決。

新興非易失性存儲器市場趨勢

對數據中心的需求不斷擴大

• 在數據中心內存需求大背景下，對內存設備的需求增加預計將推動對新興非易失性內存的需求。
• 對數據中心的這種需求是由對高性能計算、邊緣計算、大數據和雲應用程序的需求增加推動的。 隨著機器學習和人工智能的日益普及，供應商正在選擇更快的速度和更大的數據量。 在大流行期間，遠程工作、在線教育課程和在線醫療援助的迅速採用進一步補充了增長。
• 此外，為了響應 Google、Amazon Web Services、Facebook 和 Microsoft Azure 的新數據中心建設項目，Intel 和 AMD 在過去幾年推出了新的服務器處理器。 預計類似的趨勢將推動市場。
• 亞太地區的數據中心市場得到中國和印度等新興經濟體的支持。 預計中國數據中心市場的增長將受到政府支持措施和國際投資的推動。 政府推動人工智能用於安全和情報應用進一步推動了對新興非易失性存儲器的需求。
• 據 NASSCOM 稱，印度目前支持 80 個第三方數據中心。 到 2025 年，我們正在見證來自國內外參與者的投資預計將達到每年 46 億美元。

亞太地區在預測期內獲得顯著的市場份額

• 亞太地區是全球最大的非易失性存儲器新興市場之一。 該地區幾乎所有終端用戶應用程序都有很高的需求，主要受中國、印度和印度尼西亞等多個新興國家對智能手機的需求推動。
• 由於印度擁有龐大的手機消費群，預計手機產值將從2009財年的3000萬美元進一步增加到2014財年的1.26億美元。印度政府正在推動國家投資。□投資印度，促進機構，已經宣布。
• 此外，在中國，隨著在線娛樂、遠程辦公以及視頻和語音通話服務需求的增加，包括數據中心在內的新型基礎設施建設正在取得進展。 隨著數字經濟的快速發展，大規模大數據中心的建設在國內日益引人注目。 在此類數據中心中，非易失性存儲器正在興起，它可以減少電源故障或系統崩潰時的停機時間，並提供巨大的經濟價值。
• 中國、韓國和新加坡等國家/地區的半導體製造設施非常活躍。 多家跨國內存製造商正在向中國市場投入巨資，尤其是受到中國政府“中國製造 2025”等舉措的推動。 中國政府制定了一個雄心勃勃的目標，即到 2030 年將半導體產值增加到 3050 億美元，滿足國內約 80% 的半導體需求。 預計這一因素將在預測期內進一步增加對該國的投資。
• 此外，該地區領先的研究機構和大學正在開發與新興非易失性存儲器相關的各種技術。 例如，2022 年 1 月，由東京工業大學電氣與電子工程系 Pham Nam Hai 副教授領導的國際研究團隊與加州大學的其他研究人員一起宣布了自旋軌道集成磁隧道結 (MTJ) 和拓撲絕緣體。我創建了一個扭矩磁阻 RAM (SOT-MRAM) 設備。 我們已經在拓撲絕緣體中展示了具有相對高隧道磁阻效應的讀出和低電流密度的寫入。
• 因此，預計亞太地區的收入份額將比其他地區實現更高的增長。

新興非易失性存儲器市場競爭者分析

新興的非易失性存儲器市場受到台積電、德州儀器公司、英特爾公司、Microchip Technology Inc.、Infineon Technologies AG、Fujitsu Limited、GlobalFoundries Inc、CrossBar Inc. 等幾家主要參與者的適度競爭。我是這裡。 從市場份額的角度來看，一些主要參與者目前主導著市場。 然而，由於創新和技術進步，許多公司正在通過有機和無機增長戰略以及新市場的開發來增加他們在市場上的存在。 以下是最近的一些市場動態。

其他福利。

• Excel 格式的市場預測 (ME) 表
• 三個月的分析師支持

內容

第一章介紹

• 研究假設和市場定義
• 調查範圍

第二章研究方法論

第 3 章執行摘要

第 4 章市場洞察

• 市場概覽
• 產業吸引力 - 波特五力分析
  • 供應商的議價能力
  • 買家的議價能力
  • 新進入者的威脅
  • 替代品的威脅
  • 競爭強度 競爭對手公司
• 工業價值鏈分析
• 評估 COVID-19 對市場的影響

第 5 章市場動態

• 動力
  • 對高速訪問、低功耗存儲設備的需求不斷增加
  • 互聯設備和可穿戴設備對非易失性存儲器的需求不斷增長
• 約束因素
  • 非易失性存儲設備設計和製造的複雜性

第 6 章市場細分

• 類型
  • 獨立型
  • 嵌入式
• 最終用戶行業
  • 工業設備
  • 消費類電子產品
  • 公司
  • 其他
• 按地區
  • 北美
  • 歐洲
  • 亞太地區
  • 世界其他地區

第七章競爭格局

• 公司簡介
  • TSMC
  • Samsung Electronics Co. Ltd.
  • GlobalFoundries Inc.
  • Texas Instruments Inc.
  • Fujitsu Ltd.
  • SK Hynix Inc.
  • Western Digital Corp.
  • CrossBar Inc.
  • Microchip Technology Inc.
  • Intel Corporation
  • Infineon Technologies AG
  • United Microelectronics Corporation（UMC）
  • Toshiba Corp.
  • Nantero Inc.

第八章投資分析

第九章市場機會與未來趨勢

第十章關於美國

The emerging non-volatile memory market is expected to register a CAGR of approximately 22.8% during the forecast period (2023 - 2028). The emerging non-volatile memory market is anticipated to witness significant growth owing to the acceptance of memory devices across a wide range of end-user industries, including consumer electronics, enterprise, industrial, and others.

Key Highlights

• The rising demand for fast access and low power consuming memory devices, as well as increasing demand for non-volatile memory in connected and wearable devices, are some of the major factors propelling the market growth. However, high complexity in designing and manufacturing emerging non-volatile memory devices is anticipated to hamper the market growth during the forecast period.
• After several years of development, embedded emerging non-volatile memory technologies have gained substantial maturity. Several embedded MRAM-based devices entered volume production in 2021, among which are GreenWave's AI processors with GlobalFoundries' eMRAM (22nm FDSOI) and edge-AI accelerators designed and developed by Numen and Gyrfalcon (22nm ULL at TSMC).
• The increasing research activities in this space are driving the market's growth. For instance, in 2021, Samsung announced the improvement of the MTJ function of its MRAM along with advancing its 14 nm process to support its flash-type embedded MRAM designed to increase the write speed and density. In addition, the company targets the IC's emerging non-volatile memory application in wearables, microcontrollers, and IoT devices.
• COVID-19 pandemic and its global lockdowns combined impacted the memory market. Laptops and Datacentres demand grew, whereas smartphones and automotive faced a slowdown. The net result has been a comparatively balanced memory demand. As the emerging non-volatile memory business is expanding mostly on the datacentre market with storage class memory (SCM) applications facilitated by 3D XPoint, there has not been a negative impact on the overall emerging non-volatile memory market evolution. Though the pandemic created supply-chain disruptions in the first half of 2020, these were mostly cleared by the beginning of the second half of 2020.

Emerging Non-Volatile Memory Market Trends

Growing Demand for Data Centers

• The increasing demand for memory devices, buoyed by the requirement of data centers for memory, is expected to drive the demand for emerging non-volatile memories.
• This demand for data centers is driven by the increasing demand for high-performance computing, edge computing, big data, and cloud applications. The rising adoption of machine learning and artificial intelligence bolsters the vendors to opt for faster and higher data capacities. The rapid adoption of remote work, online educational classes, and online medical assistance during the pandemic further complemented the growth.
• Furthermore, in response to the new data center construction projects by Google, Amazon Web Service, Facebook, and Microsoft Azure, Intel and AMD introduced new server processors in the last few years. Similar trends are expected to drive the market.
• The Asia-Pacific data center market is buoyed by the developing economies of China and India. The growth in the Chinese data center market is expected to be bolstered by supportive government initiatives and international investments. The government push for AI in security and intelligence use further strengthens the demand for emerging non-volatile memories.
• According to NASSCOM, India is currently supporting 80 third-party data centers. It is witnessing investment from local and international players expected to touch USD 4.6 billion per annum by 2025.

Asia-Pacific to Register a Significant Market Share During the Forecast Period

• Asia-Pacific is one of the largest markets for emerging non-volatile memories globally. The region has high demand from almost all end-user applications, primarily led by demand for smartphones in multiple developing countries, such as China, India, Indonesia, etc.
• India has a large consumer base for mobile phones; hence the production of mobile handsets is further slated to increase in value from USD 30 million in FY 21 to USD 126 million in FY 26, as stated by Invest in India, the National Investment Promotion and Facilitation Agency of the Government of India.
• Further, the development of new infrastructure, including data centers, has been growing in China, driven by an increase in demand for online entertainment, telecommuting, and video and voice call services. With the fast development of the digital economy, building large, big data centers in the country is becoming more notable. This has led to the growth of emerging non-volatile memory usage in such data centers, which helps reduce downtime caused by a power failure or system crash event, thereby providing significant financial value.
• The semiconductor fabrication facilities in countries like China, Korea, and Singapore, are highly active. Several multinational memory manufacturers direct an immense amount of capital into the Chinese market, especially boosted by the country's government initiatives, such as Made in China 2025. The country's ambitious goal is to reach a value of USD 305 billion in semiconductor output by the year 2030 and meet about 80% of the domestic demand for semiconductors. This factor is expected to draw more investments into the country over the forecast period.
• Moreover, leading regional research institutes and universities are developing various technologies related to emerging non-volatile memory. For instance, in January 2022, an international research team led by Associate Professor Pham Nam Hai of the Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, along with other researchers from the University of California, created spin-orbit torque magnetoresistive RAM (SOT-MRAM) devices that integrate magnetic tunneling junctions (MTJs) and topological insulators. A readout through a relatively high tunneling magnetoresistance effect and writing utilizing low current density by a topological insulator was demonstrated.
• Thus, owing to the aforementioned factors, the revenue share from Asia-Pacific is anticipated to grow faster than the other geographical regions during the forecast period.

Emerging Non-Volatile Memory Market Competitor Analysis

The Global Emerging Non-Volatile Memory Market is moderately competitive and consists of several major players such as TSMC, Texas Instruments Inc., Intel Corporation, Microchip Technology Inc., Infineon Technologies AG, Fujitsu Ltd., GlobalFoundries Inc., CrossBar Inc., etc. In terms of market share, few major players currently dominate the market. However, with innovations and technological advancements, many companies are increasing their market presence through organic and inorganic growth strategies and tapping new markets. Some of the recent developments in the market are:

• March 2022 - Fujitsu Ltd. launched a 12Mbit ReRAM (Resistive Random Access Memory), MB85AS12MT, which is the largest density in Fujitsu's ReRAM product family. This novel product is a non-volatile memory having a large memory density of 12Mbit in a very tiny package size of around 2mm x 3mm. Additionally, it is suitable for wearable devices such as smartwatches and hearing aids.
• October 2021 - CrossBar Inc. announced new applications of its Resistive RAM (ReRAM) technology for usage in one-time-programmable (OTP) and few-time programmable (FTP) non-volatile memory (NVM) applications.

Additional Benefits:

• The market estimate (ME) sheet in Excel format
• 3 months of analyst support

TABLE OF CONTENTS

1 INTRODUCTION

• 1.1 Study Assumption and Market Definition
• 1.2 Scope Of The Study

2 RESEARCH METHODOLOGY

3 EXECUTIVE SUMMARY

4 MARKET INSIGHTS

• 4.1 Market Overview
• 4.2 Industry Attractiveness - Porter's Five Forces Analysis
  • 4.2.1 Bargaining Power Of Suppliers
  • 4.2.2 Bargaining Power Of Buyers
  • 4.2.3 Threat Of New Entrants
  • 4.2.4 Threat Of Substitute
  • 4.2.5 Intensity Of Competition Rivarly
• 4.3 Industry Value Chain Analysis
• 4.4 Assessment of Impact of COVID-19 on the Market

5 MARKET DYNAMICS

• 5.1 Drivers
  • 5.1.1 Rising demand for fast access and low power consuming memory devices
  • 5.1.2 Increasing demand for non-volatile memory in connected and wearable devices
• 5.2 Restraints
  • 5.2.1 High complexity in designing and manufacturing emerging non-volatile memory devices

6 MARKET SEGMENTATION

• 6.1 Type
  • 6.1.1 Stand-alone
  • 6.1.2 Embedded
• 6.2 End-user Industry
  • 6.2.1 Industrial
  • 6.2.2 Consumer Electronics
  • 6.2.3 Enterprise
  • 6.2.4 Others
• 6.3 Geography
  • 6.3.1 North America
  • 6.3.2 Europe
  • 6.3.3 Asia-Pacific
  • 6.3.4 Rest of the World

7 COMPETITIVE LANDSCAPE

• 7.1 Company Profiles
  • 7.1.1 TSMC
  • 7.1.2 Samsung Electronics Co. Ltd.
  • 7.1.3 GlobalFoundries Inc.
  • 7.1.4 Texas Instruments Inc.
  • 7.1.5 Fujitsu Ltd.
  • 7.1.6 SK Hynix Inc.
  • 7.1.7 Western Digital Corp.
  • 7.1.8 CrossBar Inc.
  • 7.1.9 Microchip Technology Inc.
  • 7.1.10 Intel Corporation
  • 7.1.11 Infineon Technologies AG
  • 7.1.12 United Microelectronics Corporation (UMC)
  • 7.1.13 Toshiba Corp.
  • 7.1.14 Nantero Inc.

8 INVESTMENT ANALYSIS

9 MARKET OPPORTUNITES AND FUTURE TRENDS

10 ABOUT US