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1438452

非揮發性記憶體：市場佔有率分析、產業趨勢與統計、成長預測（2024-2029）

Non-Volatile Memory - Market Share Analysis, Industry Trends & Statistics, Growth Forecasts (2024 - 2029)
出版日期: | 出版商: Mordor Intelligence | 英文 180 Pages | 商品交期: 2-3個工作天內

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簡介目錄

非揮發性記憶體市場規模預計到2024年為945.2億美元，預計到2029年將達到1647.9億美元，在預測期內（2024-2029年）年複合成長率預計為11.76%。

非揮發性記憶體市場

過去十年，可攜式系統市場的成長推動了半導體產業對海量儲存應用的非揮發性記憶體 (NVM) 技術的興趣。對更高效率、更快記憶體存取和更低功耗的需求正在推動 NVM 市場的成長。

主要亮點

  • 在蓬勃發展的消費性電子產業中，用戶期望他們的設備不斷變得更好，以閃電般的速度提供新功能，並儲存更多的電影、照片和音樂。在過去的幾十年裡，快閃記憶體實現了重大的技術創新，但由於快閃記憶體遇到了阻礙進一步擴展的技術障礙，因此需要新一代記憶體。
  • 快閃記憶體因其成本低、功耗低而被消費性電子產品採用，對市場成長具有重要意義。 NVM 用於智慧型手機和穿戴式設備，以實現大儲存容量和快​​速記憶體存取。
  • 該領域研究活動的活性化也促進了市場的成長。例如，2021年3月，英飛凌科技有限責任公司宣布推出其第二代非揮發性靜態RAM，經過QML-Q和高可靠性工業規範認證，主要針對航太和工業應用等嚴苛應用，支援非揮發性代碼您環境中的儲存。
  • 同樣，2021 年初，三星宣布改進其 MRAM 的 MTJ 功能，並改進其 14 奈米製程以支援基於快閃記憶體的嵌入式 MRAM，旨在提高寫入速度和密度。此外，該公司的目標是將新興的 IC NVM 應用到穿戴式裝置、微控制器和物聯網裝置。
  • 然而，市場上非揮發性記憶體的問題往往是由讀取/寫入耐用性和資料保存特性引起的。例如，相變記憶體 (PCM) 和快閃記憶體是耐用性有限的 NVM 範例。這些 NVM 的耐用性較低，因為在經過多次寫入周期（PCM 的重置週期和閃存的編程/擦除週期）後，存儲單元會磨損並且無法可靠地存儲資訊，因為資訊會消失。
  • COVID-19 的爆發對智慧型手機產業等多個非揮發性記憶體最終用戶產業產生了負面影響。在雲端運算、人工智慧和物聯網等重要大趨勢的推動下，家庭活動對伺服器和 PC 記憶體的需求激增，預計在預測期內支援非揮發性記憶體的成長。

非揮發性記憶體市場趨勢

快閃記憶體預計將佔據較大市場佔有率

  • 消費性電子產品日益成長的需求和普及擴大了設備快閃記憶體的應用範圍。這種記憶體類型可應用於筆記型電腦、GPS、電子樂器、數位相機、行動電話和許多其他裝置。此外，它也被資料中心解決方案供應商廣泛採用。隨著雲端解決方案的快速普及，對資料中心的需求也在快速成長。
  • 此外，隨著人工智慧/機器學習應用和物聯網設備的成長趨勢，高低延遲和高吞吐量的雲端儲存、快閃記憶體和企業資料中心針對訓練深度神經網路進行了最佳化。資料中心數量和規模的成長預計將進一步增加需求。
  • 為了滿足不斷成長的需求，市場上的供應商正在專注於開發具有更好功能的新解決方案。例如，2021年2月，Kioxia公司和西部數據公司宣布開發第六代162層3D快閃記憶體技術。這是該公司密度最高、最先進的 3D 快閃記憶體技術，利用了許多技術和製造創新。
  • 此外，由於超低功耗的需求，NOR快閃記憶體也越來越受歡迎。例如，英飛凌科技於 2022 年 1 月宣布增加開發工具來支援其 SEMPER NOR 快閃記憶體元件系列。這使開發人員能夠快速設計安全關鍵且本質安全的汽車、工業和通訊系統。
  • 同樣，旺宏國際於 2021 年 11 月宣布，它是業界第一家開始量產 1.2V 裝置的串行 NOR 快閃記憶體製造商。據該公司介紹，其超低功耗（ULP）、高速120MHz MX25S串行NOR快閃記憶體支援物聯網（IoT）、無線通訊技術、WiFi、窄帶物聯網系統、手持設備、藍牙設備和消費性應用. 它將迎來新一代產品，其應用領域包括：

亞太地區預計將佔據主要市場佔有率

  • 對線上娛樂、在家工作以及視訊和語音通話服務的需求激增，導致亞太地區各國增加了包括資料中心在內的新基礎設施建設。隨著數位經濟的快速發展，中國、印度等國家需要建造大規模的巨量資料中心。
  • 由於對 NAND 內存業務的積極態度，中國正在成為領先國家。例如，中國主要儲存公司之一的長江儲存科技（YMTC）正在國內小批量出貨包括SSD在內的64層NAND，並計劃在2021年開發並出貨128層產品。
  • 此外，開發非揮發性記憶體相關技術的新興企業已在該地區獲得了多項投資。例如，2021年4月，創星半導體（上海）在Pre-A輪資金籌措中籌集了約1億美元。本輪資金籌措由上海聯合投資主導，Atlas Capital 和 KQ Capital 跟投。該公司的目標是利用這筆投資生產電阻式隨機存取記憶體（ReRAM）晶片和其他用於儲存應用的晶片。
  • 該地區的公司將非揮發性記憶體用於各種工業應用。 2021年11月，提供非揮發性記憶體（NVM）技術的Floadia公司宣布推出上海華虹半導體製造有限公司的高品質180BCD（Z8）平台，產品名稱為ZT，支援150度C保留10年。我們宣布推出eNVM（嵌入式非揮發性記憶體）。
  • 此外，該地區非揮發性記憶體 (NVM) 的研發活動正在增加。 2022年1月，三星電子宣布推出全球首個基於MRAM（磁阻隨機存取記憶體）的記憶體內運算展示。預計這些趨勢將在預測期內推動亞太地區研究市場的成長。

非揮發性記憶體產業概況

非揮發性記憶體市場競爭非常激烈，有幾家主要公司進入該市場。該行業競爭企業之間的競爭主要取決於透過技術創新、市場滲透和競爭策略的強度來實現永續的競爭優勢。由於它是一個資本集中市場，退出障礙也很高。

  • 2022年1月，SK海力士宣布收購英特爾NAND和固態硬碟（SSD）業務的第一階段交易已經完成。該公司表示，透過收購英特爾SSD業務和中國大連NAND快閃記憶體製造工廠，完成了第一階段交易。
  • 2021 年 10 月 - NSCore Inc. 宣布推出 OTP+（一次性可編程 Plus），這是適用於物聯網技術應用的非揮發性記憶體解決方案。該公司表示，40奈米超低功耗OTP NVM IP解決方案可最大限度地減少新興市場對關鍵物聯網晶片的再製造需求。此外，與標準 OTP IP 解決方案不同，NSCore OTP+ 解決方案可以重新編程和修改。
  • 2021 年 7 月 - 美光科技宣布全球首款 176 層 NAND 通用快閃記憶體儲存 (UFS) 3.1 行動解決方案已開始量產出貨。美光 UFS 3.1 離散行動 NAND 記憶體專為高階和旗艦行動電話而設計，與前代產品相比，連續式寫入和隨機讀取速度提高了 75%，釋放了5G 的潛力。

其他福利：

  • Excel 格式的市場預測 (ME) 表
  • 3 個月分析師支持

目錄

第1章 簡介

  • 研究假設和市場定義
  • 調查範圍

第2章調查方法

第3章執行摘要

第4章市場洞察

  • 市場概況
  • 產業吸引力－波特五力分析
    • 新進入者的威脅
    • 買方議價能力
    • 供應商的議價能力
    • 替代品的威脅
    • 競爭公司之間敵對關係的強度
  • COVID-19 對市場的影響
  • 產業價值鏈分析

第5章市場動態

  • 市場促進因素
    • 連網型設備和穿戴式裝置對非揮發性記憶體的需求不斷成長
    • 企業儲存應用需求增加
  • 市場挑戰
    • 寫入耐久性低

第6章市場區隔

  • 按類型
    • 傳統非揮發性記憶體
      • 快閃記憶體
      • EEPROM
      • SRAM
      • EPROM
      • 其他傳統非揮發性記憶體
    • 下一代非揮發性記憶體
      • MRAM
      • FRAM
      • 重新記憶體
      • 3D-X 點
      • 奈米記憶體
      • 其他下一代非揮發性記憶體
  • 按最終用戶產業
    • 消費性電子產品
    • 零售
    • 資訊科技和電訊
    • 衛生保健
    • 其他最終用戶產業
  • 按地區
    • 北美洲
      • 美國
      • 加拿大
    • 歐洲
      • 英國
      • 德國
      • 法國
      • 其他歐洲國家
    • 亞太地區
      • 中國
      • 日本
      • 韓國
      • 印度
      • 其他亞太地區
    • 拉丁美洲
    • 中東/非洲

第7章 競爭形勢

  • 公司簡介
    • ROHM Co. Ltd
    • STMicroelectronics NV
    • Maxim Integrated Products Inc.
    • Fujitsu Ltd
    • Intel Corporation
    • Honeywell International Inc.
    • Micron technologies Inc.
    • Samsung Electronics Co. Ltd
    • Crossbar Inc.
    • Infineon Technologies AG
    • Avalanche Technologies Inc.
    • Adesto Technologies Corporation（Dialog Semiconductor PLC）

第8章投資分析

第9章市場的未來

簡介目錄
Product Code: 66954

The Non-Volatile Memory Market size is estimated at USD 94.52 billion in 2024, and is expected to reach USD 164.79 billion by 2029, growing at a CAGR of 11.76% during the forecast period (2024-2029).

Non-Volatile Memory - Market

In the last decade, the growth of the portable systems market attracted the interest of the semiconductor industry in non-volatile memory (NVM) technologies for mass storage applications. Demand for greater efficiency, faster memory access, and low-power consumption drive the NVM market growth.

Key Highlights

  • In the flourishing consumer electronics industry, users expect their devices to continually become more powerful, provide new functionality with incredible speed, and store more movies, pictures, and music. While flash enabled substantial innovation during the past few decades, a new generation of memory is required as flash hits technology roadblocks, preventing it from scaling much further.
  • The adoption of flash memories in consumer electronics due to their low price and power consumption is significant for the market's growth. NVM is used in smartphones and wearable devices to enable more storage and faster memory access.
  • The increasing research activities in this space are also driving the market's growth. For instance, in March 2021, Infineon Technologies LLC announced the launch of second-generation non-volatile Static RAMs that are qualified for QML-Q and high-reliability industrial specifications to mainly support non-volatile code storage in harsh environments, including aerospace and industrial applications.
  • Similarly, in early 2021, Samsung announced the improvement of its MRAM's MTJ function and advanced its 14 nm process to support its flash-type embedded MRAM designed to increase the write speed and density. In addition, the company targets the IC emerging NVM's application in wearables, microcontrollers, and IoT devices.
  • However, troubles with non-volatile memories in the market are often caused by the read/write endurance and data retention characteristics. For instance, Phase-change memories (PCMs) and flash memories are examples of NVM's with limited endurance. These NVM's have little endurance because after undergoing several writing cycles (RESET cycles for PCM, program/erase cycles for flash memory), the memory cells wear out and can no longer reliably store information.
  • The COVID-19 outbreak negatively impacted several end-user industries of non-volatile memories, such as the smartphone industry. Spurred demand for server and PC memory for stay-at-home activities, driven by important megatrends like cloud computing, AI, and the IoT, is expected to support the growth of non-volatile memory during the forecast period.

Non-Volatile Memory Market Trends

Flash Memory is Expected to Hold a Significant Market Share

  • The growing demand and penetration of consumer electronics led to device flash memory applications. This memory type finds applications in laptops, GPS, electronic musical instruments, digital cameras, cell phones, and many others. Additionally, it is extensively adopted by data center solution vendors. With exponential growth in the adoption of cloud solutions, the demand for data centers is also surging.
  • Further, with increasing propensity toward AI/ML applications and IoT devices that require high low latency and high throughput cloud storage, flash storage and enterprise data centers are optimized to train deep neural networks. The growing number and size of data centers are expected to augment demand further.
  • To cater to the growing demand, vendors operating in the market focus on developing new solutions with better capabilities. For instance, in February 2021, Kioxia Corporation and Western Digital Corp. announced the development of a sixth-generation, 162-layer 3D flash memory technology. This was the company's highest density and most advanced 3D flash memory technology that utilizes many technology and manufacturing innovations.
  • Furthermore, NOR Flash memory is also gaining traction due to ultra-low-power needs. For instance, in January 2022, Infineon Technologies announced additional development tools to support its family of SEMPER NOR Flash devices. It will further help developers to quickly design safety-critical and inherently secure automotive, industrial, and communication systems.
  • Similarly, in November 2021, Macronix International Co., Ltd. announced itself as the industry's first Serial NOR Flash memory manufacturer to bring 1.2V devices to mass production. According to the company, the ultra-low-power (ULP), high-speed 120MHz MX25S Serial NOR Flash memories are poised to usher in a new generation of products targeted at applications that include Internet of Things (IoT), wireless communications technologies, WiFi, and Narrowband IoT systems, hand-held and Bluetooth devices, and consumer applications.

Asia Pacific is Expected to Account for a Significant Market Share

  • The construction of new infrastructure, including data centers, has been growing across various countries of the Asia Pacific region, owing to a surge in demand for online entertainment, telecommuting, and video and voice call services. With the fast development of the digital economy, building large big data centers in countries such as China and India is becoming necessary.
  • China has emerged as the leading country owing to its aggressive approach to the NAND memory business. For instance, Yangtze Memory Technologies Co. Ltd (YMTC), one of China's major memory companies, had shipped 64 layers of NAND domestically in low volumes, including SSDs, with 128-layer production in development and shipments in 2021.
  • Furthermore, startups in the region that are engaged in developing technologies related to non-volatile memory are receiving several investments. For instance, in April 2021, InnoStar Semiconductor (Shanghai) Co. Ltd raised around USD 100 million in a pre-series A financing round. The funding round was led by Shanghai Lianhe Investment, and new investors who joined the round included state-backed Atlas Capital and KQ Capital. The company aims to use the investment to produce resistive random-access memory (ReRAM) chips and other chips for storage applications.
  • Companies in the region are utilizing non-volatile memory for various industrial applications. In November 2021, Floadia Corporation, a provider of Non-Volatile Memory (NVM) technology, announced the availability of its high-quality eNVM (embedded Non-volatile Memory), with product name ZT, supporting 150 degrees C retention of 10 years, in Shanghai Huahong Grace Semiconductor Manufacturing Corporation 180BCD (Z8) platform.
  • Furthermore, the region is also witnessing an increase in R&D activities in Non-Volatile Memory (NVM). In January 2022, Samsung Electronics announced the demonstration of one of the world's first in-memory computing based on MRAM (Magnetoresistive Random Access Memory). Such trends are expected to drive the growth of the studied market in the Asia Pacific region during the forecast period.

Non-Volatile Memory Industry Overview

The non-volatile memory market is competitive and consists of several major players. The competitive rivalry in this industry is primarily dependent on sustainable competitive advantage through innovation, levels of market penetration, and power of competitive strategy. Since the market is capital intensive, the barriers to exit are high as well. Some of the major players operating in the market include Rohm Co. Ltd, STMicroelectronics NV, Fujitsu ltd, and Intel Corporation. Some of the recent developments in the market are:

  • January 2022 - SK Hynix Inc. announced the completion of the first phase of the transaction to acquire Intel's NAND and solid-state drive (SSD) business. According to the company, it has closed the first phase of the transaction by acquiring Intel's SSD business and the Dalian NAND flash manufacturing facility in China.
  • October 2021 - NSCore Inc. introduced OTP+, One-Time-Programmable Plus, a non-volatile memory solution for IoT technology applications. According to the company, the 40 nm Ultra-Low-Power OTP NVM IP Solution can minimize the need to re-spin the fabrication of an IoT chip, which is critical in the emerging market. In addition, the NSCore OTP+ solution can be reprogramed and modified, unlike standard OTP Ip solutions.
  • July 2021 - Micron Technology announced that it began mass shipping the world's first 176-layer NAND Universal Flash Storage (UFS) 3.1 mobile solution. Designed for high-end and flagship phones, Micron's UFS 3.1 discrete mobile NAND memory unlocks the potential of 5G with sequential write and random read speeds of up to 75% compared to previous generations.

Additional Benefits:

  • The market estimate (ME) sheet in Excel format
  • 3 months of analyst support

TABLE OF CONTENTS

1 INTRODUCTION

  • 1.1 Study Assumptions and Market Definition
  • 1.2 Scope of the Study

2 RESEARCH METHODOLOGY

3 EXECUTIVE SUMMARY

4 MARKET INSIGHTS

  • 4.1 Market Overview
  • 4.2 Industry Attractiveness - Porter's Five Forces Analysis
    • 4.2.1 Threat of New Entrants
    • 4.2.2 Bargaining Power of Buyers
    • 4.2.3 Bargaining Power of Suppliers
    • 4.2.4 Threat of Substitute Products
    • 4.2.5 Intensity of Competitive Rivalry
  • 4.3 Impact of COVID-19 on the Market
  • 4.4 Industry Value Chain Analysis

5 MARKET DYNAMICS

  • 5.1 Market Drivers
    • 5.1.1 Growing Demand for Non-volatile Memory in Connected and Wearable Devices
    • 5.1.2 Increasing Demand for Enterprise Storage Applications
  • 5.2 Market Challenges
    • 5.2.1 Low Write Endurance Rate

6 MARKET SEGMENTATION

  • 6.1 By Type
    • 6.1.1 Traditional Non-volatile Memory
      • 6.1.1.1 Flash Memory
      • 6.1.1.2 EEPROM
      • 6.1.1.3 SRAM
      • 6.1.1.4 EPROM
      • 6.1.1.5 Other Traditional Non-volatile Memories
    • 6.1.2 Next-generation Non-volatile Memory
      • 6.1.2.1 MRAM
      • 6.1.2.2 FRAM
      • 6.1.2.3 ReRAM
      • 6.1.2.4 3D-X Point
      • 6.1.2.5 Nano RAM
      • 6.1.2.6 Other Next-generation Non-volatile Memories
  • 6.2 By End-user Industry
    • 6.2.1 Consumer Electronics
    • 6.2.2 Retail
    • 6.2.3 IT and Telecom
    • 6.2.4 Healthcare
    • 6.2.5 Other End-user Industries
  • 6.3 By Geography
    • 6.3.1 North America
      • 6.3.1.1 United States
      • 6.3.1.2 Canada
    • 6.3.2 Europe
      • 6.3.2.1 United Kingdom
      • 6.3.2.2 Germany
      • 6.3.2.3 France
      • 6.3.2.4 Rest of Europe
    • 6.3.3 Asia Pacific
      • 6.3.3.1 China
      • 6.3.3.2 Japan
      • 6.3.3.3 South Korea
      • 6.3.3.4 India
      • 6.3.3.5 Rest of Asia Pacific
    • 6.3.4 Latin America
    • 6.3.5 Middle East and Africa

7 COMPETITIVE LANDSCAPE

  • 7.1 Company Profiles
    • 7.1.1 ROHM Co. Ltd
    • 7.1.2 STMicroelectronics NV
    • 7.1.3 Maxim Integrated Products Inc.
    • 7.1.4 Fujitsu Ltd
    • 7.1.5 Intel Corporation
    • 7.1.6 Honeywell International Inc.
    • 7.1.7 Micron technologies Inc.
    • 7.1.8 Samsung Electronics Co. Ltd
    • 7.1.9 Crossbar Inc.
    • 7.1.10 Infineon Technologies AG
    • 7.1.11 Avalanche Technologies Inc.
    • 7.1.12 Adesto Technologies Corporation (Dialog Semiconductor PLC)

8 INVESTMENT ANALYSIS

9 FUTURE OF THE MARKET