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市場調查報告書
商品編碼
1457080

晶圓市場 – 2024 年至 2029 年預測

Sic Wafer Market - Forecasts from 2024 to 2029
出版日期: | 出版商: Knowledge Sourcing Intelligence | 英文 140 Pages | 商品交期: 最快1-2個工作天內

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簡介目錄

晶圓市場預計複合年成長率為 21.60%，從 2022 年的 3.31 億美元增加到 2029 年的 12.99 億美元。

該晶圓是碳化矽半導體。碳化矽（SiC）具有較寬的能隙，使其適合高功率應用。 SiC基板經常用作高性能功率 IC 的基礎。 SiC 可承受比矽或氮化鎵 (GaN) 更高的溫度，從而提高電氣設備的性能。如今的半導體業務蓬勃發展，晶圓供應是成功的關鍵。為了滿足對 SiC 半導體不斷成長的需求，晶片製造商越來越依賴內部和外部來源來生產必要的晶圓。

市場促進因素

  • 電動汽車應用的擴大正在推動市場成長。

為了滿足客戶的期望，汽車領域的新型電動車具有充電時間更短、續航里程更長和性能更高的特性。為了提供客戶上述優勢，汽車企業需要強大的電子元件，即使在高溫下也能有效且有效率地工作。由於基於SiC的技術具有高導熱性、低開關損耗、更高的功率密度和更高的頻寬等優點，因此現在正在使用寬能能隙SiC技術來製造功率模組。 Soitec 於 2022 年 5 月宣布推出首款 200mm 碳化矽智慧晶圓。透過此次公告，Soitec 能夠將其 SiC 產品線擴展到 150mm 以上，並推進智慧晶圓的研發，以滿足汽車產業不斷成長的需求。

Soitec 專有的 SmartSiC 技術可顯著改善電力電子設備的運作並提高電動車的能源經濟性。此技術在電阻極低的多晶矽晶圓上沉積一層非常薄的優質碳化矽。此外，德國以其技術力實力而聞名，其汽車產業對於世界向電動車的轉變至關重要。意識到這是一個機遇，美國晶片製造商Wolfspeed 與德國汽車供應商 ZF 合作，將於2023 年2 月在德國薩爾州建設一座200mm 碳化矽(SiC) 晶圓工廠和研發設施。宣布了建設計劃。該工廠將專注於整個電力電子領域的下一代碳化矽產品和工藝，包括汽車、工業和可再生能源發電。

  • 預計6吋晶圓尺寸將佔有較大佔有率。

SiC功率半導體在耐熱性和耐高壓性方面超過了目前業界標準的傳統矽基功率半導體。 SiC功率半導體有助於功率模組的小型化和提高能源效率。因此，SiC 功率半導體在許多行業都有很高的需求，特別是用於電動車、鐵路車輛和工業機械。大多數功率半導體裝置中使用的n型SiC基板的直徑為6英吋。儘管各大IDM廠商在8吋晶圓研發方面取得了重大進展，但提高產量比率以及將功率半導體工廠的6吋生產線轉為8吋生產線仍需要時間。

因此，6吋SiC基板暫時很可能會繼續普及。例如，2022年3月，SDK開始量產直徑6吋（150毫米）的碳化矽結晶晶圓（wafer）。選擇我們的SiC磊晶片的客戶決定開始內部量產6吋晶圓。

據估計，亞太地區的成長率最快。

亞太地區因其全球半導體業務的優勢和資本投資的支持，成為全球晶圓市場的重要區域。由於電動車產業的需求，日本企業正大力投資加強SiC功率半導體的生產。例如，2022年1月，富士電機株式會社宣布，決定對富士電機津輕半導體有限公司進行資本投資，以加強SiC功率半導體的生產。

此外，日本是晶圓生產的創新中心，不斷開發新產品以增加產量。例如，經營工業控制業務的Nanotronics宣佈於2022年12月發布其最新的光致發光系統「nSpecTM PRISM」。 Nanotronics 產品線的這項新增功能使 SiC 前端晶圓製造（從未拋光的 SiC基板到磊晶和裝置製造）不再需要 KOH 蝕刻等有害檢測技術。我們為以下領域提供全面的解決方案：對於微管和位錯等 SiC 致命缺陷的大批量檢測，該系統專門用於耦合透射顯微鏡和 PL 顯微鏡。

目錄

第1章 簡介

  • 市場概況
  • 市場定義
  • 調查範圍
  • 市場區隔
  • 貨幣
  • 先決條件
  • 基準年和預測年時間表
  • 相關利益者的主要利益

第2章調查方法

  • 研究設計
  • 調查過程

第3章執行摘要

  • 主要發現
  • 分析師觀點

第4章市場動態

  • 市場促進因素
  • 市場限制因素
  • 波特五力分析
  • 產業價值鏈分析
  • 分析師觀點

第5章碳化矽（SIC）晶圓市場：依規模

  • 介紹
  • 2-4英寸
    • 市場趨勢和機遇
    • 成長前景
    • 地理盈利洞察
  • 6吋
    • 市場趨勢和機遇
    • 成長前景
    • 地理盈利洞察
  • 8-12英寸
    • 市場趨勢和機遇
    • 成長前景
    • 地理盈利洞察

第6章碳化矽（SIC）晶圓市場：依應用分類

  • 介紹
  • 溝通
    • 市場趨勢和機遇
    • 成長前景
    • 地理盈利洞察
  • 電力和能源
    • 市場趨勢和機遇
    • 成長前景
    • 地理盈利洞察
  • 車
    • 市場趨勢和機遇
    • 成長前景
    • 地理盈利洞察
  • 家用電器
    • 市場趨勢和機遇
    • 成長前景
    • 地理盈利洞察
  • 其他
    • 市場趨勢和機遇
    • 成長前景
    • 地理盈利洞察

第7章碳化矽（SIC）晶圓市場：依地區

  • 介紹
  • 北美洲
    • 按尺寸
    • 按用途
    • 按國家/地區
  • 南美洲
    • 按尺寸
    • 按用途
    • 按國家/地區
  • 歐洲
    • 按尺寸
    • 按用途
    • 按國家/地區
  • 中東/非洲
    • 按類型
    • 按發展
    • 按最終用戶
    • 按國家/地區
  • 亞太地區
    • 按尺寸
    • 按用途
    • 按國家/地區

第8章競爭環境及分析

  • 主要企業及策略分析
  • 市場佔有率分析
  • 合併、收購、協議和合作
  • 有競爭力的儀表板

第9章 公司簡介

  • Wolfspeed Inc
  • STMicroelectronics
  • Infineon Technologies
  • TankeBlue
  • Atecom Technology Co Ltd
  • SK Siltron Co Ltd
  • SiCrystal GmbH
  • Xiamen Powerway Advanced Material Co Ltd
  • Silicon Valley Microelectronics Inc.
簡介目錄
Product Code: KSI061614471

The SiC wafer market is projected to grow at a CAGR of 21.60% to reach US$1.299 billion in 2029 from US$0.331 billion in 2022.

SiC wafers are silicon carbide semiconductors. The wide bandgap of silicon carbide (SiC) makes it suitable for high-power applications. SiC substrates are frequently the foundation for high-performance power ICs. SiC enhances the performance of electrical devices by withstanding higher temperatures than silicon or gallium nitride (GaN). Today's semiconductor business is rapidly increasing, which implies that wafer supply is critical to success. Chipmakers are increasingly resorting to both in-house and external sources to generate the requisite SiC wafers to meet the increased demand for SiC semiconductors.

Market Drivers

  • Growing applicability in EV application has propelled the market growth.

To meet customer expectations, new EVs in the automotive sector feature shorter charge times, longer ranges, and better performance. To provide the benefits listed above to customers, automobile businesses need powerful electronic components capable of effective and efficient functioning at high temperatures. Due to the benefits of SiC-based technology, such as its high thermal conductivity, low switching losses, improved power density, and increased bandwidth capabilities, power modules are now being created employing wide-bandgap SiC technologies. Soitec introduced its first 200 mm silicon carbide SmartSiC wafer in May 2022, and with the release, Soitec was able to expand its line of SiC products beyond 150 mm, advance the research and development of its SmartSiC wafers, and meet the expanding needs of the automobile industry.

The exclusive SmartSiC technology from Soitec allows power electronics equipment to work much better and increases the energy economy of electric vehicles. The technique entails attaching a very thin layer of superior SiC to a polySiC wafer with extremely low resistance. Furthermore, Germany is known for its engineering prowess, and the country's automotive sector is essential to the world's shift to electric mobility. recognizing this as a chance In collaboration with the German automotive supplier ZF, American chipmaker Wolfspeed announced its plans to construct a 200-mm silicon carbide (SiC) wafer fab and R&D facility in Saarland, Germany in February 2023. For the whole power electronics sector, including the automotive, industrial, and renewable energy applications, the facility will concentrate on next-generation SiC products and processes.

  • The 6-inch Sic wafer size is predicted to account for a significant share.

SiC power semiconductors outperform traditional silicon-based power semiconductors, the industry standard at the moment, in terms of heat resistance and high withstanding voltage. SiC power semiconductor helps power modules become smaller and more energy efficient. As a result, SiC power semiconductors are in high demand across many industries, particularly for usage in xEVs, railcars, and industrial machinery. Most n-type SiC substrates used for power semiconductor devices have a diameter of 6 inches. Even though the development of 8-inch SiC wafers has seen significant progress from major IDMs, more time is still needed to raise yield rates and convert power semiconductor fabs' 6-inch production lines to 8-inch production lines.

So, for the foreseeable future, 6-inch SiC substrates are likely to stay popular. For instance, in March 2022, SDK began mass production of silicon carbide single crystal wafers (SiC wafers) with a diameter of 6 inches (150 mm). Customers choosing SDK's SiC epitaxial wafers led to the decision to begin internal mass manufacturing of 6-inch SiC wafers.

Asia Pacific region is estimated to have the fastest growth rate.

Due to its dominance of the worldwide semiconductor business and the support of capital investment, the Asia Pacific is a significant region in the global SiC wafer market. Due to the demand from the EV industry, Japanese companies are investing heavily to enhance the manufacturing of SiC power semiconductors. For instance, to boost the production of SiC power semiconductors, in January 2022, Fuji Electric Co., Ltd. announced that it has decided to make a capital investment in Fuji Electric Tsugaru Semiconductor Co., Ltd.

In addition, Japan has been a center for technological innovation in the production of SiC wafers and continues to develop new products to boost output. For instance, the industrial control business Nanotronics announced the release of its most recent photoluminescence system, the nSpecTM PRISM, in December 2022. By removing the need for harmful testing techniques like KOH etching, this addition to the Nanotronics product line provides a comprehensive solution for SiC frontend wafer manufacture from unpolished SiC substrate to epitaxy and device manufacturing. For high-volume inspection of SiC killer defects such as micropipes and dislocations, the system specializes in coupling transmission and PL microscopy.

Key Development

  • In September 2022: The next-generation G10-SiC 200 mm product solution for silicon carbide epitaxy was introduced by AIXTRON. The new G10-SiC system is based on the well-established G5 WW C 150 mm platform and offers a configurable dual wafer size option. The SiC industry's move from 150 mm (6 inches) to 200 mm (8 inches) wafer diameter depends on this feature. The new platform is based on an automated wafer cassette-to-cassette loading method that transfers wafers at high temperatures. The G10SiC offers best-in-class wafer throughput and throughput per square meter when combined with fast growth rate process capabilities to effectively utilize the constrained cleanroom area available in semiconductor fabs.

Segmentation:

By Size

  • 2 to 4 inches
  • 6 inches
  • 8 to 12 inches

By Application

  • Communication
  • Power & Energy
  • Automotive
  • Consumer Electronics
  • Others

By Geography

  • North America
  • USA
  • Canada
  • Mexico
  • South America
  • Brazil
  • Argentina
  • Others
  • Europe
  • United Kingdom
  • Germany
  • France
  • Italy
  • Spain
  • Others
  • Middle East and Africa
  • Saudi Arabia
  • UAE
  • Others
  • Asia Pacific
  • China
  • Japan
  • India
  • South Korea
  • Australia
  • Others

TABLE OF CONTENTS

1. INTRODUCTION

  • 1.1. Market Overview
  • 1.2. Market Definition
  • 1.3. Scope of the Study
  • 1.4. Market Segmentation
  • 1.5. Currency
  • 1.6. Assumptions
  • 1.7. Base, and Forecast Years Timeline
  • 1.8. Key Benefits for the stakeholder

2. RESEARCH METHODOLOGY

  • 2.1. Research Design
  • 2.2. Research Processes

3. EXECUTIVE SUMMARY

  • 3.1. Key Findings
  • 3.2. Analyst View

4. MARKET DYNAMICS

  • 4.1. Market Drivers
  • 4.2. Market Restraints
  • 4.3. Porter's Five Forces Analysis
    • 4.3.1. Bargaining Power of Suppliers
    • 4.3.2. Bargaining Power of Buyers
    • 4.3.3. Threat of New Entrants
    • 4.3.4. Threat of Substitutes
    • 4.3.5. Competitive Rivalry in the Industry
  • 4.4. Industry Value Chain Analysis
  • 4.5. Analyst View

5. SILICON CARBIDE (SIC) WAFER MARKET BY SIZE

  • 5.1. Introduction
  • 5.2. 2 to 4 Inches
    • 5.2.1. Market Trends and Opportunities
    • 5.2.2. Growth Prospects
    • 5.2.3. Geographic Lucrativeness Insights
  • 5.3. 6 Inches
    • 5.3.1. Market Trends and Opportunities
    • 5.3.2. Growth Prospects
    • 5.3.3. Geographic Lucrativeness Insights
  • 5.4. 8 to 12 Inches
    • 5.4.1. Market Trends and Opportunities
    • 5.4.2. Growth Prospects
    • 5.4.3. Geographic Lucrativeness Insights

6. SILICON CARBIDE (SIC) WAFER MARKET BY APPLICATION

  • 6.1. Introduction
  • 6.2. Communication
    • 6.2.1. Market Trends and Opportunities
    • 6.2.2. Growth Prospects
    • 6.2.3. Geographic Lucrativeness Insights
  • 6.3. Power & Energy
    • 6.3.1. Market Trends and Opportunities
    • 6.3.2. Growth Prospects
    • 6.3.3. Geographic Lucrativeness Insights
  • 6.4. Automotive
    • 6.4.1. Market Trends and Opportunities
    • 6.4.2. Growth Prospects
    • 6.4.3. Geographic Lucrativeness Insights
  • 6.5. Consumer Electronics
    • 6.5.1. Market Trends and Opportunities
    • 6.5.2. Growth Prospects
    • 6.5.3. Geographic Lucrativeness Insights
  • 6.6. Others
    • 6.6.1. Market Trends and Opportunities
    • 6.6.2. Growth Prospects
    • 6.6.3. Geographic Lucrativeness Insights

7. SILICON CARBIDE (SIC) WAFER MARKET BY GEOGRAPHY

  • 7.1. Introduction
  • 7.2. North America
    • 7.2.1. By Size
    • 7.2.2. By Application
    • 7.2.3. By Country
      • 7.2.3.1. USA
        • 7.2.3.1.1. Market Trends and Opportunities
        • 7.2.3.1.2. Growth Prospects
      • 7.2.3.2. Canada
        • 7.2.3.2.1. Market Trends and Opportunities
        • 7.2.3.2.2. Growth Prospects
      • 7.2.3.3. Mexico
        • 7.2.3.3.1. Market Trends and Opportunities
        • 7.2.3.3.2. Growth Prospects
  • 7.3. South America
    • 7.3.1. By Size
    • 7.3.2. By Application
    • 7.3.3. By Country
      • 7.3.3.1. Brazil
        • 7.3.3.1.1. Market Trends and Opportunities
        • 7.3.3.1.2. Growth Prospects
      • 7.3.3.2. Argentina
        • 7.3.3.2.1. Market Trends and Opportunities
        • 7.3.3.2.2. Growth Prospects
      • 7.3.3.3. Others
        • 7.3.3.3.1. Market Trends and Opportunities
        • 7.3.3.3.2. Growth Prospects
  • 7.4. Europe
    • 7.4.1. By Size
    • 7.4.2. By Application
    • 7.4.3. By Country
      • 7.4.3.1. United Kingdom
        • 7.4.3.1.1. Market Trends and Opportunities
        • 7.4.3.1.2. Growth Prospects
      • 7.4.3.2. Germany
        • 7.4.3.2.1. Market Trends and Opportunities
        • 7.4.3.2.2. Growth Prospects
      • 7.4.3.3. France
        • 7.4.3.3.1. Market Trends and Opportunities
        • 7.4.3.3.2. Growth Prospects
      • 7.4.3.4. Italy
        • 7.4.3.4.1. Market Trends and Opportunities
        • 7.4.3.4.2. Growth Prospects
      • 7.4.3.5. Spain
        • 7.4.3.5.1. Market Trends and Opportunities
        • 7.4.3.5.2. Growth Prospects
      • 7.4.3.6. Others
        • 7.4.3.6.1. Market Trends and Opportunities
        • 7.4.3.6.2. Growth Prospects
  • 7.5. Middle East and Africa
    • 7.5.1. By Type
    • 7.5.2. By Deployment
    • 7.5.3. By End-User
    • 7.5.4. By Country
      • 7.5.4.1. Saudi Arabia
        • 7.5.4.1.1. Market Trends and Opportunities
        • 7.5.4.1.2. Growth Prospects
      • 7.5.4.2. UAE
        • 7.5.4.2.1. Market Trends and Opportunities
        • 7.5.4.2.2. Growth Prospects
      • 7.5.4.3. Others
        • 7.5.4.3.1. Market Trends and Opportunities
        • 7.5.4.3.2. Growth Prospects
  • 7.6. Asia Pacific
    • 7.6.1. By Size
    • 7.6.2. By Application
    • 7.6.3. By Country
      • 7.6.3.1. China
        • 7.6.3.1.1. Market Trends and Opportunities
        • 7.6.3.1.2. Growth Prospects
      • 7.6.3.2. Japan
        • 7.6.3.2.1. Market Trends and Opportunities
        • 7.6.3.2.2. Growth Prospects
      • 7.6.3.3. India
        • 7.6.3.3.1. Market Trends and Opportunities
        • 7.6.3.3.2. Growth Prospects
      • 7.6.3.4. South Korea
        • 7.6.3.4.1. Market Trends and Opportunities
        • 7.6.3.4.2. Growth Prospects
      • 7.6.3.5. Taiwan
        • 7.6.3.5.1. Market Trends and Opportunities
        • 7.6.3.5.2. Growth Prospects
      • 7.6.3.6. Others
        • 7.6.3.6.1. Market Trends and Opportunities
        • 7.6.3.6.2. Growth Prospects

8. COMPETITIVE ENVIRONMENT AND ANALYSIS

  • 8.1. Major Players and Strategy Analysis
  • 8.2. Market Share Analysis
  • 8.3. Mergers, Acquisitions, Agreements, and Collaborations
  • 8.4. Competitive Dashboard

9. COMPANY PROFILES

  • 9.1. Wolfspeed Inc
  • 9.2. STMicroelectronics
  • 9.3. Infineon Technologies
  • 9.4. TankeBlue
  • 9.5. Atecom Technology Co Ltd
  • 9.6. SK Siltron Co Ltd
  • 9.7. SiCrystal GmbH
  • 9.8. Xiamen Powerway Advanced Material Co Ltd
  • 9.9. Silicon Valley Microelectronics Inc.