與 CMP 技術、產品及市場相關之分析

本報告提供CMP平坦化技術概要，用途，消費品，CMP設備的業者簡介，用戶的課題及市場相關預測等，為您概述為以下內容。

第1章 簡介

第2章 摘要整理

• 概要
• 市場機會

第3章 平坦化技術

• 平坦化的必要性
  • 光刻
  • 氣相沉積
  • 蝕刻
• 應用程式
  • 介電質
  • 金屬
• 平坦化技術
  • 局部平坦化
  • 全面平坦化
• CMP
  • 背景
  • 研究活動
  • 優點與缺點
  • 過程參數
  • 設備處理參數

第4章 CMP的消費品

• 碳化矽
• CMP後沖洗設備
• 拋光墊

第5章 CMP設備

• 單磁頭方法
• 多磁頭方法
• 設備簡介
• 叢集工具
• CMP設備的競爭設備

第6章 用戶課題

• 持有成本
• 用戶必要條件
• 供應商的基準
• 用戶•提供者的相互關係
• 可靠性
• 設備的維護性

第7章 市場預測

• 概要
• 市場預測的前提條件
• 設備市場
  • CMP拋光設備
  • 試驗指標檢測設備
  • 藥品供給/混合設備
  • 薄膜厚度/檢測
• 消費品市場
  • 碳化矽
  • 接墊

Chemical mechanical planarization (CMP) is a very important process in semiconductor manufacturing. The combination of mechanical abrasion and chemical etching enable polishing and flattening of wafers before the photolithography stage. This helps in avoiding the depth of field issues during illumination.

This technology-marketing report examines and projects the technologies involved in the planarization of semiconductor layers. The emphasis is on Chemical Mechanical Polishing (CMP). This report discusses the technology trends, products, applications, and suppliers of materials and equipment. A market forecast for CMP equipment and materials and market shares of vendors is presented.

Table of Contents

Chapter 1:. Introduction

Chapter 2: Executive Summary

• 2.1 . Introduction
• 2.2. Market Opportunities

Chapter 3: Planarization Methods

• 3.1. Need for Planarity
  • 3.1.1. Lithography
  • 3.1.2. Deposition
  • 3.1.3. Etching
• 3.2. Applications
  • 3.2.1. Dielectrics
  • 3.2.2. Metals
• 3.3. Planarization Techniques
  • 3.3.1. Local Planarization
    • 3.3.1.1. Deposition-Etchback
    • 3.3.1.2. ECR
    • 3.3.1.3. Oxide Reflow
    • 3.3.1.4. Spin-on-Glass
    • 3.3.1.5. TEOS-Ozone
    • 3.3.1.6. Laser
  • 3.3.2. Global Planarization
    • 3.3.2.1. Spin-On Polymer
    • 3.3.2.2. Polyimide Coating
    • 3.3.2.3. Isotropic Etch
    • 3.3.2.4. Spin Etch Planarization
    • 3.3.2.5. Electropolishing
• 3.4. CMP
  • 3.4.1. Background
  • 3.4.2. Research Efforts
  • 3.4.3. Advantages and Disadvantages
  • 3.4.4. Process Parameters
    • 3.4.4.1. STI Planarization
    • 3.4.4.2. Copper CMP
    • 3.4.4.3. Low-K Integration
    • 3.4.4.4. Defect Density
    • 3.4.4.5. Metrology
  • 3.4.5. Device Processing Parameters
    • 3.4.5.1. Memory Devices
    • 3.4.5.2. Logic Devices

Chapter 4: CMP Consumables

• 4.1. Slurries
  • 4.1.1. Types
  • 4.1.2. pH Effects
  • 4.1.3. Oxidizers
  • 4.1.4. Particle Morphology Effects
  • 4.1.5. Chemical Distribution Management
  • 4.1.6. Slurry Supplier Profiles
  • 4.1.7. Abrasive Suppliers
• 4.2. Post-CMP Clean
• 4.3. Polishing Pads
  • 4.3.1. Types
  • 4.3.2. Performance
  • 4.3.3. Slurryless Pads

Chapter 5: CMP Equipment

• 5.1. Single-Head Approach
  • 5.1.1. Advantages
  • 5.1.2. Disadvantages
• 5.2. Multi-Head Approach
  • 5.2.1. Advantages
  • 5.2.2. Disadvantages
• 5.3. Equipment Profiles
  • 5.3.1. Applied Materials
  • 5.3.2. Ebara
  • 5.3.3. Strasbaugh
  • 5.3.4. Novellus
  • 5.3.5. Nikon
  • 5.3.6. Doosan Mecatec
  • 5.3.7. Other Entrants
• 5.4. Clustered Tools
• 5.5. Competitive Non-CMP Tools

Chapter 6:. User Issues

• 6.1. Cost of Ownership
• 6.2. User Requirements
• 6.3. Benchmarking a Vendor
  • 6.3.1. Pricing
  • 6.3.2. Vendor Commitment and Attitudes
  • 6.3.3. Vendor Capabilities
  • 6.3.4. System Capabilities
• 6.4. User-Supplier Synergy
  • 6.4.1. Feedback During Equipment Evaluation
  • 6.4.2. Feedback During Device Production
• 6.5. Reliability
• 6.6. Equipment Maintainability

Chapter 7: Market Forecast

• 7.1. Introduction
• 7.2. Market Forecast Assumptions
• 7.3. Equipment Market
  • 7.3.1. Introduction
  • 7.3.2. CMP Polisher Market
• 7.4. Consumable Market
  • 7.4.1. Slurry
  • 7.4.2. Pads

List of Figures

• 1.1. Process Integration for CMP
• 3.1. Levels of Integration of Dynamic Rams
• 3.2. Planarization Lengths of Various Methods
• 3.3. Normalized Removal Rates
• 3.4. Reduced Complexity With Copper
• 3.5. Copper Loss From CMP
• 3.6. CMP Copper Process Technologies
• 3.7. CMP Performance Improvements
• 3.8. Polish Endpoint Control
• 4.1. Effect of Nitrate Ions on the Cu Removal Rate
• 4.2. Removal Rate of Ta
• 4.3. Bulk Chemical Distribution System
• 4.4. Through The Brush Chemical Delivery
• 4.5. Megasonics Post-CMP Clean
• 4.6. Micrograph Of 3M Slurryless Pad
• 6.1. Effect of Tool MTBF on CMP Cost
• 6.2. Removal Rate Vs Throughput and CMP Cost
• 7.1. Worldwide CMP Polisher Market
• 7.2. Worldwide CMP Slurry Market Forecast
• 7.3. CMP Slurry Market by Application
• 7.4. ILD Slurry Market Share
• 7.5. STI Slurry Market Share
• 7.6. Copper Barrier Slurry Market Share
• 7.7. Copper Step 1 Slurry Market Share
• 7.8. Worldwide CMP Pad Market Forecast
• 7.9. CMP PAD Market Shares

List of Tables

• 3.1. Interconnect Levels of Logic Device
• 3.2. Typical Process Specifications
• 3.3. Organic Polymers for IMD Applications
• 3.4. . CMP Process Variables
• 3.5. Optimized CMP and Post-CMP Clean Parameters
• 3.6. Interconnect Materials by Segment
• 4.1. CMP Slurry Suppliers
• 4.2. Abrasive Suppliers and Products
• 4.2. Oxide CMP Pad Properties and Performance
• 6.1. Polisher Equipment Targets
• 6.2. Post-CMP Clean Equipment Targets
• 7.1. Worldwide CMP Polisher Market Forecast
• 7.2. Worldwide CMP Polisher Market Shares
• 7.3. Worldwide CMP Slurry Market Forecast
• 7.4. Worldwide Slurry Market Shares
• 7.5. Worldwide CMP Pad Market Forecast