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市場調查報告書
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926566

砷化鎵 (GaAs) 元件全球市場 - 市佔率、市場策略、市場預測:2020年∼2026年

Gallium Arsenide (GaAs) Components - Next Generation Semiconductors: Market Shares, Market Strategies and Market Forecasts, 2020 to 2026

出版日期: | 出版商: WinterGreen Research, Inc. | 英文 212 Pages; 116 Tables & Figures | 商品交期: 最快1-2個工作天內

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  • 全貌
  • 簡介
  • 目錄
簡介

砷化鎵 (GaAs) 是新一代的半導體,預測在2020年會有5,000億美元的市場規模。

本報告調查分析了全球砷化鎵 (GaAs) 元件市場,並針對市場概要、市場規模與預測、部門別市場分析、競爭情勢等提供了體系化資訊。

目錄

第1章 砷化鎵半導體:市場說明與市場力學

  • 砷化鎵 (GaAs)
  • 結晶成長
  • GaAs結晶分析
  • 將GaAs結晶轉換成晶圓 - 機械性晶圓
  • GaAs切割
  • 砷化鎵 (GaAs)

第2章 砷化鎵半導體市佔率與預測

  • 砷化鎵新一代半導體市場的促進因素
  • 砷化鎵元件、粉末的市佔率
  • 砷化鎵元件、粉末市場預測
  • 砷化鎵半導體市場部門
  • 砷化鎵半導體地區別市場分析

第3章 砷化鎵、SIC、InD市場規模:部門別

  • GaAs廣能隙材料
  • 用於GaAs的金額
  • 自律型、EV用的3D感測、消費者電子產品用3D感測
  • GaAs單元
  • GaAs、InP部門分析、光基礎建設、資料中心
  • GaAs、InP部門分析、4G遠程無線電頭、5G波束賦形天線、5G RF電子
  • SIC部門分析、EV、智慧電網電力、開關模式、太陽能、風力能源

第4章 砷化鎵新一代半導體的研究與技術

  • 矽與GaAs的結晶結構
  • 矽、砷化鎵的能帶結構
  • 太陽的GaAs
  • 砷化鎵 (GaAs) 相對於矽的優點
  • CMOS寬頻開關
  • SIC
  • 各種半導體材料的能隙
  • 氫化鎵
  • 磊晶成長:在晶圓上成長的複雜化學層
  • GaAs環境面

第5章 砷化鎵半導體企業檔案

  • Advanced Wireless Semiconductor
  • Anadigics/GaAs Labs
  • Avago Technologies
  • AXT
  • BWT
  • China Crystal Technologies
  • Cree
  • DOWA Electronics Materials
  • Freiberger Compound Materials
  • Hanergy Holdings/AltaDevices
  • Hittite Microwave
  • IQE
  • M/A-COM Technology Solutions
  • 村田製作所
  • Qorvo
  • RFMD
  • Shenzhou Crystal Technology
  • Skyworks Solutions
  • 住友電氣工業
  • Tianjin Jingming Electronic Materials
  • Texas Instruments
  • TriQuint Semiconductor Inc
  • Yunnan Lincang Xinyuan Germanium Industry Co
  • Umicore
  • Vishay Gallium Arsenide LEDs
  • WIN Semiconductors
  • II-VI
  • 主要加入砷化鎵市場的企業
目錄
Product Code: SH28391314

This “ Gallium Arsenide (GaAs) Components - Next Generation Semiconductors: Market Shares, Market Strategies and Market Forecasts, 2020 to 2026” study has 212 pages, 116 tables and figures. GaAs represents next generation semiconductors, a market that is $500 billion dollars in 2020.

Next generation GaAs semiconductors promise to bring a huge market, not totally replacing the existing semiconductor market, but ultimately making a huge dent in it. The ability to replace silicon semiconductors, a market that is $500 billion dollars in 2020 makes one sit up and take notice. The existing silicon semiconductor market is pretty good size for a market that barely existed in 1975. Next generation GaAs support the signal speed that is needed to implement 5G.

GaAs works in a way that silicon cannot. The potential for the next generation GaAs wafers is staggering, with the overall semiconductor market likely to surpass $20 trillion by 2026 as the new industrial revolution takes hold and 5G supports IoT that connects all things together.

Once economies of scale are realized these semiconductor GaAs markets are expected to really take off. The sheer size of the global semiconductor market at $500 billion dollars in 2020 shows that the potential for a next generation semiconductor technology is truly exciting. The gallium arsenide wafers are next generation technology because they operate faster than the silicon semiconductors, they support a new, faster network called 5G.

Gallium arsenide GaAs represents the next generation of semiconductor chips because the chips can do things that the silicon chips cannot do. GaAs does have a considerably higher bandgap than silicon. It is a direct band gap semiconductor with a zinc blende crystal structure.

Sensing for autonomous and electric vehicles is one use of the technology. 3D Sensing for consumer electronics and use for lasers is common. Units are used in radar and lasers. The benefits of using GaAs in devices derive in part from the characteristic that GaAs generates less noise than most other types of semiconductor components. As a result, it is useful in weak-signal amplification applications.

Due to these benefits related to generating less noise, GaAs is a suitable replacement for silicon in the manufacture of linear and digital ICs. A gallium arsenide wafer is also known as Gallium arsenide substrate. Economies of scale for gallium arsenide promise to make the technology viable.

Silicon commercial advantage is that it is a thousand times cheaper to make. As we move into the 5G era, that advantage will dissipate because of the volume of GaAs components that are made to meet demand permitting vendors to leverage economies of scale. Gallium arsenide material technical advantages over silicon are that electrons race through its crystalline structure faster than they can move through silicon. Cellphones, typically rely on speedy gallium arsenide chips to process the high-frequency radio signals that arrive faster than silicon can handle.

Unlike silicon cells, Gallium Arsenide cells are relatively insensitive to heat. Alloys made from GaAs using Al, P, SB, or In have characteristics complementary to those of GaAs, allowing great flexibility. GaAs is very resistant to radiation damage. This, along with its high efficiency, makes GaAs very desirable for space applications. GaAs biggest drawback is the is the high cost of a single-crystal GaAs substrate which has been a barrier to volume manufacturing.

GaAs markets at $3.8 billion in 2020 promise to grow to $22 billion by 2026. With the opportunity to participate in the 5G next generation semiconductor markets. Gallium arsenide components will achieve broad economies of scale, making them far more affordable and more available.

Table of Contents

  • Abstract: Gallium Arsenide Semiconductors Indium Phosphide, Gallium Nitride And Silicon Carbide Related Markets

Gallium Arsenide Semiconductors and Powders

Executive Summary

  • Economies of Scale for Gallium Arsenide

1. Gallium Arsenide Semiconductors: Market Description and Market Dynamics

  • 1.1. Gallium Arsenide (GaAs)
    • 1.1.1. Gallium Arsenide (GaAs) Advantages
    • 1.1.2. Gallium Arsenide (GaAs) Overcomes Disadvantages
    • 1.1.3. Working Electronic Circuits in a Gallium Arsenide Device
    • 1.1.4. Gallium and Arsenic High-Pressure Synthesis of GaAs
  • 1.2. Crystal Growth
    • 1.2.1. VGF Crystal Growth Process
    • 1.2.2. GaAs LEC Crystal Growth Process
    • 1.2.3. Crystal Annealing
  • 1.3. GaAs Crystal Analysis
  • 1.4. Converting a GaAs Crystal Into Wafers - Mechanical Wafering
  • 1.5. GaAs Sawing
  • 1.6. Gallium Arsenide (GaAs)

2. Gallium Arsenide Semiconductors Market Shares and Forecasts

  • 2.1. Gallium Arsenide Next Generation Semiconductors Market Driving Forces
    • 2.1.1. Gallium Arsenide vs. Silicon Semiconductors
  • 2.2. Gallium Arsenide Components and Powders Market Shares
  • 2.3. Gallium Arsenide Components and Powders Market Forecasts, Units and Dollars
    • 2.3.1. Gallium Arsenide GaAs Unit Analysis
  • 2.4. Gallium Arsenide Semiconductor Market Segments
    • 2.4.1. GaAs VGF vs GaAs LEC % Market Share
    • 2.4.2. Gallium Arsenide (GaAs) in Cell Phones
    • 2.4.3. Gallium Arsenide LEDs
  • 2.5. Gallium Arsenide Semiconductor Regional Market Analysis

3. Gallium Arsenide, SIC, and InD Market Size by Sector

  • 3.1. GaAs Wide Bandgap Material
  • 3.2. GaAs Dollars - 3D Sensing for Autonomous And Electric Vehicles, 3D Sensing for Consumer Electronics, and More, Summary
  • 3.3. 3D Sensing for Autonomous And Electric Vehicles and 3D Sensing for Consumer Electronics, Units and Dollars
  • 3.4. GaAs Units
  • 3.5. GaAs, InP Segment Analysis Optical Infrastructure and Datacenters, Dollars, Units, and Percent, Worldwide, 2019 to 2022
  • 3.6. GaAs and InP Segment Analysis 4G Remote Radioheads, 5G Beam Forming Antennae, 5G RF Electronics, Dollars, Worldwide, 2019 to 2022
  • 3.9. SIC Segment Analysis Electric Vehicles, Smart Grid Power, Switching, Solar and Wind Energy, Dollars, Units, and Percent, Worldwide, 2019 to 2022,
    • 3.6.1. Solar

4. Gallium Arsenide Next Generation Semiconductors Research and Technology

  • 4.1. Silicon and GaAs Crystal Structure
    • 4.1.1. GaAs and Other Compound Semiconductors Characteristics Comparison
  • 4.2. Silicon and Gallium Arsenide Energy Band Structure
  • 4.3. GaAs in Solar
  • 4.4. Gallium arsenide (GaAs) Advantages over Silicon
  • 4.5. CMOS Wideband Switches
  • 4.6. SIC
    • 4.6.1. Gallium Nitride
  • 4.7. Bandgaps in Different Semiconductor Materials
    • 4.7.1. Comparing GaAs, Si, SiC, and GaN Bandgaps
    • 4.7.2. Gallium Nitride and Silicon Carbide
  • 4.8. Gallium Nitride
  • 4.9. Epitaxial Growth: Complex Series of Chemical Layers Grown on Top of Wafers 84
  • 4.10. GaAs Environmental Aspects

5. Gallium Arsenide Semiconductors Company Profiles

  • 5.1. Advanced Wireless Semiconductor
  • 5.2. Anadigics / GaAs Labs
  • 5.3. Avago Technologies
  • 5.4. AXT
    • 5.4.1. AXT InP
    • 5.4.2. AXT Ge
    • 5.4.3. Semi-insulating GaAs
    • 5.4.4. AXT Raw Materials
  • 5.5. BWT
    • 5.5.1. BWT Has Been Focusing On Fiber Pigtailed Diode Laser Packaging And Assembly
    • 5.5.2. BWT High Power, High Brightness, Fiber Coupled Diode Laser
  • 5.6. China Crystal Technologies
    • 5.6.1. China Crystal Technologies Revenue
  • 5.7. Cree Billion Dollar Commitment to SiC Mosfets
  • 5.8. DOWA Electronics Materials
  • 5.9. Freiberger Compound Materials
    • 5.9.1. GaAs Wafer Technologie - Freiberger Compound Materials
    • 5.9.2. Freiberger High Pressure Synthesis of GaAs
    • 5.9.3. Freiberger VGF Crystal Growth
    • 5.9.4. Freiberger Crystal Annealing
    • 5.9.5. Freiberger Electrical Properties of GaAs
    • 5.9.6. Freiberger Mechanical Wafering
  • 5.10. Hanergy Holdings / AltaDevices
    • 5.10.1. Alta Devices Mass Production
    • 5.10.2. Alta Devices Disrupting Traditional Solar Technologies
    • 5.10.3. Alta Devices thin-film gallium arsenide solar technology
  • 5.11. Hittite Microwave
  • 5.12. IQE
    • 5.12.1. ICE Geographical Revenue
    • 5.12.2. ICE Sites and Technologies
  • 5.13. M/A-COM Technology Solutions
  • 5.14. Murata Manufacturing
  • 5.15. Qorvo
  • 5.16. RFMD
  • 5.17. Shenzhou Crystal Technology
  • 5.18. Skyworks Solutions
  • 5.19. Sumitomo Electric
  • 5.20. Tianjin Jingming Electronic Materials
  • 5.21. Texas Instruments: LMG3410R050 GaN Device
  • 5.22. TriQuint Semiconductor Inc
  • 5.23. Yunnan Lincang Xinyuan Germanium Industry Co
  • 5.24. Umicore
    • 5.24.1. 7.12.2 Umicore
  • 5.25. Vishay Gallium Arsenide LEDs
  • 5.26. WIN Semiconductors
  • 5.27. II-VI
    • 5.27.1. II-VI Finisar Acquisition
    • 5.27.2. II-VI Reporting Segments
    • 5.27.3. II-VI Incorporated
    • 5.27.4. Finisar
    • 5.27.5. II-VI Segment Revenue by End Markets for Full Year FY19
  • 5.28. Selected Gallium Arsenide Market Participants

WinterGreen Research,

  • WinterGreen Research Methodology
  • WinterGreen Research Process
  • Market Research Study
  • WinterGreen Research Global Market Intelligence Company
  • Report Description: Next Generation Technology

List of Tables and Figures

  • Abstract: Gallium Arsenide Semiconductors Indium Phosphide, Gallium Nitride And Silicon Carbide Related Markets
  • Figure 1. Gallium Arsenide Next Generation Semiconductor Components Market Forecasts, Dollars, Worldwide, 2020-2026
  • Figure 2. GaAs VGF Furnace Equipment
  • Figure 3. GaAs LEC Crystal Growth Process
  • Figure 4. GaAs LEC Crystal Growth Furnace
  • Figure 5. 2.1 GaAs Crystal Analysis
  • Figure 6. Crystal Grinding
  • Figure 7. GaAs Sawing
  • Figure 8. GaAs Wire Saw
  • Figure 9. GaAs Edge Rounding
  • Figure 10. Advantages of GaAs
  • Figure 11. Disadvantages of GaAS
  • Figure 12. Gallium Arsenide Components and Powders: Dollars, Market Shares Worldwide 2019
  • Figure 13. Gallium Arsenide Components and Powders: Dollars, Market Shares Worldwide 2019
  • Figure 14. Gallium Arsenide Components and Powders Company Market Presence, Dollars, Worldwide, 2019
  • Figure 15. Gallium Arsenide Primary Competitive Factors
  • Figure 16. Factors Impacting Ability to Compete in Gallium Arsenide Product Target Markets:
  • Figure 17. Gallium Arsenide Next Generation Semiconductor Components Market Forecasts, Dollars, Worldwide, 2020-2026
  • Figure 18. Gallium Arsenide Components Market Forecasts, Dollars, Worldwide, 2020-2026
  • Figure 19. GaAs Segment Analysis 3D Sensing in Lidar for Autonomous and Electric Vehicles, 3D Sensing in Consumer Electronics, Optical Infrastructure, Datacenters, 4G Remote Radioheads, 5G Beam Forming Units, Worldwide, 2019 to 2022 39
  • Figure 20. GaAs Segment Analysis 3D Sensing in Lidar for Autonomous and Electric Vehicles, 3D Sensing in Consumer Electronics, Optical Infrastructure, Datacenters, 4G Remote Radioheads, 5G Beam Forming Dollars, Worldwide, 2019 to 2022 40
  • Figure 21. Gallium Arsenide Formulations
  • Figure 22. Gallium Arsenide (GaAs) Wafer Market Segments by Type
  • Figure 23. Gallium Arsenide (GaAs) Wafer Market Segment by Applications
  • Figure 24. Advantages of GaAs
  • Figure 25. Advantages of CMOS
  • Figure 26. Gallium Arsenide (GaAs) Components Dollars, Regional Market Segments 2019
  • Figure 27. Gallium Arsenide (GaAs) Regional Market Segments, Dollars, and Percent, Worldwide, 2019
  • Figure 28. China Crystal Technologies Regional Market Segments, Dollars, # Shipments, and Percent, Worldwide, 2019
  • Figure 29. GaAs Segment Analysis 3D Sensing in Lidar for Autonomous and Electric Vehicles, 3D Sensing in Consumer Electronics, Optical Infrastructure, Datacenters, 4G Remote Radioheads, 5G Beam Forming Dollars, Worldwide, 2019 to 2022 48
  • Figure 30. GaAs and InP Segment Analysis 3D Sensing in Lidar for Autonomous and Electric Vehicles, 3D Sensing in Consumer Electronics, Dollars, Units, and Percent, Worldwide, 2019 to 2022
  • Figure 31. GaAs Segment Analysis 3D Sensing in Lidar for Autonomous and Electric Vehicles, 3D Sensing in Consumer Electronics, Optical Infrastructure, Datacenters, 4G Remote Radioheads, 5G Beam Forming Units, Worldwide, 2019 to 2022 51
  • Figure 32. GaAs, InP Segment Analysis Optical Infrastructure and Datacenters, Dollars, Units, and Percent, Worldwide, 2019 to 2022
  • Figure 33. GaAs Segment Analysis Optical Infrastructure and Datacenters, Dollars, Worldwide, 2019 to 2022
  • Figure 34. GaAs and InP Segment Analysis 4G Remote Radioheads, 5G Beam Forming Antennae, 5G RF Electronics, Dollars, Worldwide, 2019 to 2022
  • Figure 35. GaAs and InP Segment Analysis 4G Remote Radioheads, 5G Beam Forming Antenaes, 5G RF Electronics, Dollars, Worldwide, 2019 to 2022
  • Figure 36. GaAs and InP Segment Analysis 4G Remote Radioheads, 5G Beam Forming Antenaes, 5G RF Electronics, Dollars, Worldwide, 2019 to 2022 (Continued)
  • Figure 37. GaAs and InP Segment Analysis 4G Remote Radioheads, 5G Beam Forming Antenaes, 5G RF Electronics, Dollars, Worldwide, 2019 to 2022
  • Figure 38. GaAs Segment Analysis 4G Remote Radioheads, 5G Beam Forming Antenaes, 5G RF Electronics, Dollars, Worldwide, 2019 to 2022
  • Figure 39. SIC Segment Analysis Electric Vehicles, Smart Grid Power, Switching, Solar and Wind Energy, Dollars, Units, and Percent, Worldwide, 2019 to 2022,
  • Figure 40. GaAs Solar Power
  • Figure 41. GaAs Lasers, Sensors, Radar, and 5G Communications
  • Figure 42. GaAs Segmentation
  • Figure 43. GaAs Addressing Growing Markets
  • Figure 44. II-VI GaAs Platform + Finisar Microelectronics Design Expertise
  • Figure 45. Silicon and GaAs Crystal Structure
  • Figure 46. GaAs and Other Compound Semiconductor Characteristics
  • Figure 47. Silicon and Gallium Arsenide Energy Band Structure
  • Figure 48. GaAs Processing: Semi Insulating Starting Wafer
  • Figure 49. GaAs Processing: Semi Insulating Strip and Etch of Wafer
  • Figure 50. GaAs Etch , Connectors, and Liftoff Processing
  • Figure 51. GaAs Processing: Semi Insulating Resist, Strip, Anneal, and Layer Encapsulation Wafer
  • Figure 52. Advantages of Gallium Arsenide over Silicon
  • Figure 53. GaAs for LEDs
  • Figure 54. Comparison of SIC and GaAS Bandgaps
  • Figure 55. Gallium Nitride and Silicon Carbide Comparison of Bandgaps
  • Figure 56. Silicon Carbide.
  • Figure 57. Gallium Nitride
  • Figure 58. AXT Revenue 2019, first 3 Quarters
  • Figure 59. AXT Revenue by Segment 2019, first 3 Quarters
  • Figure 60. AXT Investments in Raw Materials
  • Figure 61. AXT Revenue Amounts by Product Type
  • Figure 62. AXT Product Applications
  • Figure 63. AXT Geographical Information
  • Figure 64. BWT
  • Figure 65. BWT Products
  • Figure 66. BWT Product Modules
  • Figure 67. BWT Beijing Laser Products
  • Figure 68. BWT Beijing Diode Laser Products
  • Figure 69. BWT High Power, High Brightness, Fiber Coupled Diode Laser
  • Figure 70. Zhongke Jingdian Information Materials Beijing
  • Figure 71. China Chrystal Technologies Factory and Headquarters
  • Figure 72. Lab China Crystal Technologies.
  • Figure 73. Top Countries Supplied by China Crystal Technologies Co., Ltd.
  • Figure 74. China Crystal Technologies Products
  • Figure 75. China Crystal Technologies Regional Market Segments, Dollars, # Shipments, and Percent, Worldwide, 2019
  • Figure 76. Cree CAB450M12XM3 (PDF) is a 1200V, 450A Silicon Carbide Half-Bridge Module.
  • Figure 77. Cree High-Power Device Uses
  • Figure 78. DOWA Electronics Materials Products
  • Figure 79. Dowa Electronics Headquarters
  • Figure 80. DOWA Powders
  • Figure 81. Freiberger Corporate Headquarters
  • Figure 82. GaAs Wafer - Freiberger Compound Materials
  • Figure 83. Alta Devices Thin Layer Flexible, and Lightweight Solar Cell
  • Figure 84. Alta Devices Mass Production Tools To Support Thin Film GaAs for Solar Panels
  • Figure 85. Alta Devices Thin And Lightweight Solar Cells Provide Conversion Efficiency
  • Figure 86. IQE Operates at Wafer Production, Chip Fabrication, and Device Manufacture Levels
  • Figure 87. ICE Geographical Revenue
  • Figure 88. ICE Sites and Technologies
  • Figure 89. Texas Instruments Gate Driver Circuitry Along with 600V GaN Transistor
  • Figure 90. Yunnan Lincang Xinyuan Germanium Products
  • Figure 91. Umicore's Precious Metals Facility in Hoboken, Belgium.
  • Figure 92. Umicore SA's Large Metal Manufacturing Complex in Hoboken
  • Figure 93. London Gold Bar Manufactured by the Umicore Group
  • Figure 94. Umicore Revenue by Segment
  • Figure 95. Umicore Revenue by Geography
  • Figure 96. II-VI GaAs Applications
  • Figure 97. II-VI GaAs Features
  • Figure 98. 14G Photodiode Top Contact
  • Figure 99. II-VI's Compound Semiconductor Photonic Solutions Segment
  • Figure 100. II-VI's Key End Markets
  • Figure 101. II-IV Two Six Market Segments
  • Figure 102. II-VI Core and Growth Markets
  • Figure 103. II-VI Customer Base
  • Figure 104. II-VI Revenue Growth Brought by Transformative Acquisitions
  • Figure 105. II-VI Transformative Acquisitions
  • Figure 106. Finisar Brings Significant Next-Generation Technologies For Communications, 3D Sensing, and LiDAR Enabling New Market Growth
  • Figure 107. II-VI Addressing Multiple Strong and Growing Markets
  • Figure 108. II-VI 3D Sensing and LiDAR
  • Figure 109. II-VI Power Electronics for Green Energy
  • Figure 110. II-VI Power Electronics for Green Energy
  • Figure 111. II-VI Industrial Laser Materials Processing
  • Figure 112. II-VI Aerospace & Defense
  • Figure 113. II-VI EUV Lithography
  • Figure 114. II-VI Segment Revenue by End Markets for Full Year FY19
  • Figure 115. II-VI Revenue Percent by Segment FY 2019
  • Figure 116. II-VI Revenue by Segment FY 2019