表紙
市場調查報告書

全球NAND型快閃記憶體市場:各種類(SLC、MLC、TLC)、結構(2D、3D)、用途(智慧型手機、記憶卡、平板電腦)、地區(2018年∼2023年)

Global NAND Flash Memory Market - Growth, Trends, and Forecast (2019 - 2024)

出版商 Mordor Intelligence LLP 商品編碼 704831
出版日期 內容資訊 英文 120 Pages
商品交期: 2-3個工作天內
價格
Back to Top
全球NAND型快閃記憶體市場:各種類(SLC、MLC、TLC)、結構(2D、3D)、用途(智慧型手機、記憶卡、平板電腦)、地區(2018年∼2023年) Global NAND Flash Memory Market - Growth, Trends, and Forecast (2019 - 2024)
出版日期: 2019年03月01日內容資訊: 英文 120 Pages
簡介

全球NAND型快閃記憶體市場,預計從2018年到2023年的CAGR(年複合成長率)為9.1%。

本報告提供全球NAND型快閃記憶體市場調查,市場概要,各類型、結構、用途、地區的市場規模的變化與預測,市場趨勢,市場成長要素及阻礙因素分析,競爭情形,主要企業的簡介等全面性資訊。

目錄

第1章 簡介

  • 主要的調查成果
  • 調查的前提條件
  • 調查結果

第2章 調查手法

第3章 摘要整理

第4章 市場趨勢

  • 市場概要
  • 市場促進因素
    • 對低成本的儲存需求增加
    • 智慧裝置的普及率上升
    • 重要領域所使用的高性能電腦的需求增加
  • 市場課題
    • 快閃記憶體的高初期成本
  • 波特的五力分析
    • 買方議價能力
    • 供給企業談判力
    • 新加入業者的威脅
    • 替代品的威脅
    • 競爭企業間的敵對關係

第5章 NAND型快閃記憶體市場:各市場區隔

  • 各類型
    • SLC
    • MLC
    • TLC
  • 各結構
    • 2D
    • 3D
  • 各用途
    • 智慧型手機
    • SSD
    • 存儲卡
    • 平板電腦
    • 其他
  • 各地區
    • 北美
    • 歐洲
    • 亞太地區
    • 南美
    • 中東、非洲

第6章 廠商市場佔有率

第7章 企業簡介

  • Samsung Electronics Co. Ltd
  • 東芝
  • Micron Technology Inc.
  • SK Hynix Inc.
  • Intel Corporation
  • Renesas Electronics
  • SanDisk Corp.
  • Numonyx Inc.
  • Powerchip Technology Corporation
  • Spansion Inc.

第8章 投資分析

第9章 市場未來展望

本網頁內容可能與最新版本有所差異。詳細情況請與我們聯繫。

目錄
Product Code: 63838

Market Overview

The NAND Flash Memory Market is expected to register a CAGR of 9.1%, during the forecast period (2019 - 2024). The current macro trends of AI and machine learning, mobility, and connectivity are favorable to NAND markets and expected to result in memory continuing to increase its share in the semiconductor market.

  • Increasing penetration of smart devices due to smart city trends and factory automation require storage of massive amount of data. Consumer technology industry revenue in the U.S to grow by six per cent in 2018, USD 377 billion in retail revenues, according to Consumer Technology Association.
  • With continuous upgradations in consumer electronics technology the need for smaller size, more reliable and low-cost storage solutions demand is picking up. Newly emerging NVM (Non-Volatile Memory) technologies, offering increased speed and durability compared with NAND, are expected to begin playing a significant role and encroach on the market share of NAND by 2020.

Scope of the Report

3D NAND is the successor to 2D NAND flash memory for storage applications such as smartphones and solid-state storage drives (SSDs). Challenges with 3D stacking remain and the opportunity in scaling concerning the number of layers remain to be seen.

Key Market Trends

Smartphone segment is Expected to Witness Significant Growth

  • Improving the scaling limits year on year, smartphone manufacturers sell smartphones at a premium by upgrading the memory capacity to boost performance.
  • With 5G wireless communication on its way, the use of smartphones would increase multifold, growing the demand for the latest models to raise the bar continuously.
  • Samsung, four years after launching the first Universal Flash Storage solution, the 128-gigabyte (GB) eUFS, it has passed the terabyte threshold in smartphone storage using its in-house most advanced 512-gigabit (Gb) V-NAND flash memory.
  • Flash Memory storage has become an essential component in smartphones, not only for consumers whose demand for storage keeps on increasing with content creation but also for OEMs from Bill of Materials (BoM) cost perspective. The NAND flash demand has been growing exponentially, primarily driven by the growth of the average capacity in smartphones, which is expected to cross 60GB per smartphone in Q4 2018.

Asia-Pacific Hold the Largest Market Share

Asia Pacific is one of the largest markets for NAND flash in the world. The region has a high demand from almost all the end-user applications alike, primarily led by the demand for smartphones in several developing countries in the region, such as China, India, Indonesia etc.

  • There is a high activity from the semiconductor fabrication facilities in countries like China, Korea, and Singapore. Chinese government's initiatives such as Made in China 2025 has drawn substantial capital from memory manufacturers. The country has set goals to reach USD 305 billion in semiconductor output by 2030, and meet at least 80 of domestic demand for semiconductors are expected to draw more investments into the country.
  • Owing to such development in China, several competitors in the region are intensifying their efforts of expansion. For example, as of February 2019, SK Hynix, world's second largest memory-chip maker, announced that it is planning to invest USD 106 billion to establish four new semiconductor fabrication plants in Seoul, South Korea.

Competitive Landscape

The NAND Flash memory market is dominated by major vendors, such as Intel, Micron Technology, Samsung Electronics, SanDisk, SK Hynix, and Toshiba. As the entry barriers in the market are high, the entry of new players is difficult. The existing vendors in the market are investing heavily in the R&D of new and innovative products.

  • NAND chip-level players, such as Intel, Micron, Samsung, SanDisk/Toshiba, and SK Hynix have successfully increased profitability and captured additional value through forward integration to the NAND system level, with offerings, such as solid-state drives for enterprise data centers and cloud computing and embedded solutions.
  • In December 2018, Samsung released a multi-terabyte 860 QVO SSD built with high-density 4-bit multi-level cell (MLC) NAND flash architecture
  • China's Yangtze Memory Technologies Co. (YMTC) recieved billions of dollars in funding from the Chinese government and introduced its first 3D NAND technology in 2018.

Reasons to Purchase this report:

  • The market estimate (ME) sheet in Excel format
  • Report customization as per the client's requirements
  • 3 months of analyst support

Table of Contents

1 INTRODUCTION

  • 1.1 Study Deliverables
  • 1.2 Study Assumptions
  • 1.3 Scope of the Study

2 RESEARCH METHODOLOGY

3 EXECUTIVE SUMMARY

4 MARKET DYNAMICS

  • 4.1 Market Overview
  • 4.2 Introduction to Market Drivers and Restraints
  • 4.3 Market Drivers
    • 4.3.1 Increasing Demand For Low-cost Storage Solutions
    • 4.3.2 Increasing Penetration Of Smart Devices
  • 4.4 Market Restraints
    • 4.4.1 High Initial Cost Of Flash Memory
  • 4.5 Industry Attractiveness - Porter's Five Force Analysis
    • 4.5.1 Threat of New Entrants
    • 4.5.2 Bargaining Power of Buyers/Consumers
    • 4.5.3 Bargaining Power of Suppliers
    • 4.5.4 Threat of Substitute Products
    • 4.5.5 Intensity of Competitive Rivalry

5 MARKET SEGMENTATION

  • 5.1 Type
    • 5.1.1 SLC (One-bit Per Cell)
    • 5.1.2 MLC (Two-bit Per Cell)
    • 5.1.3 TLC (Three-bit Per Cell)
  • 5.2 Structure
    • 5.2.1 2-D Structure
    • 5.2.2 3-D Structure
  • 5.3 Application
    • 5.3.1 Smartphone
    • 5.3.2 SSD
    • 5.3.3 Memory Card
    • 5.3.4 Tablet
    • 5.3.5 Other Applications
  • 5.4 Geography
    • 5.4.1 North America
    • 5.4.2 Europe
    • 5.4.3 Asia Pacific
    • 5.4.4 Latin America
    • 5.4.5 Middle East and Africa

6 COMPETITIVE LANDSCAPE

  • 6.1 Vendor Market Share
  • 6.2 Company Profiles
    • 6.2.1 Samsung Electronics Co. Ltd
    • 6.2.2 Toshiba Corporation
    • 6.2.3 Micron Technology Inc.
    • 6.2.4 SK Hynix Inc.
    • 6.2.5 Intel Corporation
    • 6.2.6 Renesas Electronics Corporation
    • 6.2.7 SanDisk Corp.
    • 6.2.8 Powerchip Technology Corporation
    • 6.2.9 Cypress Semiconductor Corporation

7 MARKET OPPORTUNITIES AND FUTURE TRENDS

Back to Top