市場調查報告書

下一代電晶體的全球市場 - 各類型、用途、地區 - 成長,趨勢,及預測(2018年∼2023年)

Next-Generation Transistors Market - Growth, Trends, and Forecast (2019 - 2024)

出版商 Mordor Intelligence LLP 商品編碼 393533
出版日期 內容資訊 英文 120 Pages
商品交期: 2-3個工作天內
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下一代電晶體的全球市場 - 各類型、用途、地區 - 成長,趨勢,及預測(2018年∼2023年) Next-Generation Transistors Market - Growth, Trends, and Forecast (2019 - 2024)
出版日期: 2019年06月01日內容資訊: 英文 120 Pages
簡介

預計全球下一代電晶體市場將從2018年到2023年,以3.56%的年複合成長率擴大。

本報告提供下一代電晶體的全球市場調查,提供市場概要,各材料、類型、終端用戶、地區的市場趨勢,市場規模的變化與預測,市場促進、阻礙因素以及市場機會分析,競爭情形,主要企業的簡介等全面性資訊。

目錄

第1章 簡介

  • 調查成果
  • 調查的前提條件
  • 市場定義

第2章 調查方法

第3章 摘要整理

第4章 市場動態

  • 市場概況
  • 市場成長要素
  • 市場阻礙因素
  • 波特的五力分析
    • 供應商談判力
    • 消費者談判力
    • 新加入廠商的威脅
    • 替代品的威脅
    • 產業內的競爭

第5章 技術概要

第6章 各材料分析

  • 橫向擴散金屬氧化物半導體(LDMOS)
  • 砷化鎵(GaAs)
  • 氮化鎵(GaN)
  • 砷化銦(InAs)
  • 磷化銦(InP)
  • 其他

第7章 各類型分析

  • 高電子移動性電晶體(HEMT)
  • 雙極晶體管(BJT)
  • 場效電晶體(FET)
  • 複合發射極電晶體(MET)
  • 雙重閘極金屬氧化薄膜半導體場效電晶體
  • 其他

第8章 各終端用戶分析

  • 航太、防衛
  • 工業
  • 通訊
  • 家電
  • 其他

第9章 各地區分析

  • 北美
  • 歐洲
  • 亞太地區
  • 中東、非洲
  • 中南美

第10章 企業簡介

  • NXP Semiconductors NV
  • Infineon Technologies AG
  • ST Microelectronics
  • Texas Instruments Inc.
  • Avago Technologies Ltd.
  • Fairchild Semiconductor International, Inc.
  • Vishay Intertechnology, Inc.
  • Microchip Technology, Inc.
  • International Rectifier Corporation
  • Power Integrations, Inc.
  • Samsung Semiconductor, Inc.
  • Taiwan Semiconductor Manufacturing Company
  • GlobalFoundries
  • Intel Corporation

第11章 投資分析

第12章 市場未來展望

第13章 免責聲明

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目錄
Product Code: 55975

Market Overview

Transistors have always played a central role in many electronic circuits, where they usually function either as a switch or an amplifier. With current silicon-based transistors topping up at around 14 nm, the semiconductor industry is currently on the search for new materials that can prolong Moore's law at smaller scales. The last two decades have experienced the scaling of silicon transistor dimensions that have powered the electronics revolution, with transistors reaching nanometre sizes. As CMOS continues to scale down beyond a certain point, reliability issues have scaled up. To exceed the limits of silicon, new channel materials with high carrier velocities are being developed to support the Next-Generation of Transistors. For instance, he finFET according to Intel is scalable to 14nm and Intel has already started working on solutions for 10nm and below fabrications using advanced technologies.

Scope of the Report

According to Moore's law, the number of transistors on a one-inch computer will double every year, while the costs halve. That period has now gone up to 18 months, and it's getting longer due to the topping-out of silicon. The computing devices of the future will need to be both more powerful and agile as the growing number of applications will require increased speed, reduced latency, and light detection. This has led the industry to invest itself in finding out next-generation materials for transistors with higher carrier velocities as compared to Silicon. For instance, with much higher electron mobility than silicon, group III-V semiconductor materials can be fit into smaller and faster transistors.

Key Market Trends

Technological Advancements to Drive the Demand for Increasing Device Densities

  • Manufacturers have to find suitable replacements for existing products to accommodate the consumer needs. Moore's law has been in place for decades reducing the size of the wafer, while increasing the device density, this has been the way to cater to growing need for faster processing.
  • The Tri-Gate transistor design released by Intel Corporation has laid the foundation for the development of better 3D-structured transistors that are capable of enhanced performance. This introduction of 3D to the design has led to vast improvements over the planar transistor structure.
  • These advantages quantify themselves in the form of improved performance, reduced leakage current, huge increase in the device density, and a reduction in susceptibility of the transistor to charged particle single-event upsets.
  • This decrease in size has led to an increase in the device density and upgraded the functional capacity of the chip. The ability to increase the number of devices in the chip influences performance of the complete system, while reducing the cost of each wafer.

Asia-Pacific to Register the Fastest Growth Rate

  • The developing economies of the region such as China and Japan have huge manufacturing bases for electronics and hence, hold the potential to become major players in the transistors market.
  • China, however, has lagged behind Taiwan, and South Korea in chip development. China, in order to change this scenario, has made the development of its own semiconductor sector a core part of its Made in China 2025 plan.
  • China hopes to bolster its share of the electronics market, while having domestic production reach 80% of domestic demand for chips to power the myriad of smartphones, computers and other devices its 1.4 billion people use on a daily basis. All these factors are expected to contribute to the market growth.

Competitive Landscape

The next-generation transistors market is a highly competitive market. The semiconductor industry itself is going through a phase of specialization. Historically, the industry has concentrated on producing computer chips that could perform several generalized functions. These chips were related to each other to some extent. But today the applications of the semiconductors are more nuanced and differentiated leading to the proliferation of a number of niche players with specialized expertise across various verticals. Moreover, in this industry, a lot of players do outsource their functionalities except a few major players like Intel who do design, fabrication, and manufacturing of semiconductor products. This makes the industry deeply connected to global supply chains and have made this industry both fiercely competitive as well as deeply collaborative.

The factors mentioned above make the next-generation transistors market a fragmented market with the presence of a large number of players. Some of the significant players are Intel Corporation, Infineon Technologies AG, STMicroelectronics N.V., Texas Instruments Incorporated, NXP Semiconductors N.V. Some of the recent developments in this industry are as follows:-

  • May 2019 - Samsung announced plans to begin production of one of two 3-nm GAA processes that it plans to offer by the second half of 2020, with mass production expected in 2021. The company plans to begin production of the next 3-nm GAA process in 2021, with mass production expected in 2022. Samsung started to volume production on its 7-nm FinFET process, the first to make use of next-generation extreme ultraviolet (EUV) lithography.
  • September 2018 - NXP Semiconductors N.V. announced the launch of new RF power transistors designed for smart industrial applications, featuring the groundbreaking 65 V laterally diffused metal oxide semiconductor (LDMOS) silicon technology that targets industrial, scientific and medical applications such as laser generation, plasma processing, magnetic-resonance imaging, skin treatment and diathermy as well as the growing segment of RF Energy where transistors.

Reasons to Purchase this report:

  • The market estimate (ME) sheet in Excel format
  • Report customization as per the client's requirements
  • 3 months of analyst support

Table of Contents

1 INTRODUCTION

  • 1.1 Study Deliverables
  • 1.2 Study Assumptions
  • 1.3 Scope of the Study

2 RESEARCH METHODOLOGY

3 EXECUTIVE SUMMARY

4 MARKET DYNAMICS

  • 4.1 Market Overview
  • 4.2 Introduction to Market Dynamics
  • 4.3 Market Drivers
    • 4.3.1 Technological Advancements Leading To Demand for Increasing Device Densities
    • 4.3.2 Proliferation of Consumer Electronics and Increased Use of Electronics in the Industrial Sector will Drive the Demand
  • 4.4 Market Restraints
    • 4.4.1 Cost of Maintaining Moore's Law is Getting Higher with Low Returns
  • 4.5 Industry Value Chain Analysis
  • 4.6 Industry Attractiveness - Porter's Five Force Analysis
    • 4.6.1 Threat of New Entrants
    • 4.6.2 Bargaining Power of Buyers/Consumers
    • 4.6.3 Bargaining Power of Suppliers
    • 4.6.4 Threat of Substitute Products
    • 4.6.5 Intensity of Competitive Rivalry

5 MARKET SEGMENTATION

  • 5.1 By Type
    • 5.1.1 High Electron Mobility Transistor (HEMT)
    • 5.1.2 Bipolar Junction Transistor (BJT)
    • 5.1.3 Field Effect Transistors (FET)
    • 5.1.4 Multiple Emitter Transistor (MET)
    • 5.1.5 Dual Gate Metal Oxide Semiconductor Field Effective Transistor
  • 5.2 By End-User Industry
    • 5.2.1 Aerospace & Defense
    • 5.2.2 Industrial
    • 5.2.3 Telecommunications
    • 5.2.4 Consumer Electronics
  • 5.3 Geography
    • 5.3.1 North America
    • 5.3.2 Europe
    • 5.3.3 Asia Pacific
    • 5.3.4 Latin America
    • 5.3.5 Middle East & Africa

6 COMPETITIVE LANDSCAPE

  • 6.1 Company Profiles
    • 6.1.1 NXP Semiconductors N.V.
    • 6.1.2 Infineon Technologies AG
    • 6.1.3 STMicroelectronics N.V.
    • 6.1.4 Fairchild Semiconductor International, Inc. (ON Semiconductor Corp.)
    • 6.1.5 Texas Instruments Incorporated
    • 6.1.6 Intel Corporation
    • 6.1.7 GLOBALFOUNDRIES Inc.
    • 6.1.8 Taiwan Semiconductor Manufacturing Company
    • 6.1.9 Samsung Electronics Co., Ltd
    • 6.1.10 Microchip Technology Inc.

7 INVESTMENT ANALYSIS

8 MARKET OPPORTUNITIES AND FUTURE TRENDS

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