市場調查報告書
商品編碼
1086972

NAND型快閃記憶體的全球市場預測(2022年∼2027年)

NAND Flash Memory Market - Forecasts from 2022 to 2027

出版日期: | 出版商: Knowledge Sourcing Intelligence | 英文 125 Pages | 商品交期: 最快1-2個工作天內

價格
  • 全貌
  • 簡介
  • 目錄
簡介

全球NAND型快閃記憶體的市場規模,從2020年的516億4,800萬美元,2027年達到951億4,500萬美元,在預測期間內預計以9.12%的年複合成長率成長。

NAND型快閃記憶體,有低功率,可擴張設計,成本效率,高密度等許多特徵,成為滿足加入國際市場的新媒體產品需求的理想選項。

本報告提供全球NAND型快閃記憶體市場調查,市場概要,市場促進因素和阻礙因素,各類型、結構、用途、地區的分析,競爭情形,企業簡介等資訊。

目錄

第1章 簡介

  • 市場定義
  • 市場區隔

第2章 調查手法

  • 調查資料
  • 前提條件

第3章 摘要整理

  • 調查的重點

第4章 市場動態

  • 推動市場要素
  • 阻礙市場要素
  • 波特的五力分析
    • 供應商談判力
    • 買主談判力
    • 替代品的威脅
    • 新加入業者的威脅
    • 產業的競爭情形
  • 產業的價值鏈分析

第5章 NAND型快閃記憶體市場:各類型

  • 簡介
  • 單等級電池單元(SLC)
  • 多等級電池單元(MLC)
  • 三等級電池單元(TLC)

第6章 NAND型快閃記憶體市場:各結構

  • 簡介
  • 2D結構
  • 3D結構

第7章 NAND型快閃記憶體市場:各用途

  • 簡介
  • 智慧型手機
  • SSD
  • 存儲卡
  • 平板電腦
  • 其他的用途

第8章 NAND型快閃記憶體市場:各地區

  • 簡介
  • 北美
    • 美國
    • 加拿大
    • 墨西哥
  • 南美
    • 巴西
    • 阿根廷
    • 其他
  • 歐洲
    • 德國
    • 法國
    • 英國
    • 西班牙
    • 其他
  • 中東、非洲
    • 沙烏地阿拉伯
    • 以色列
    • 其他
  • 亞太地區
    • 中國
    • 日本
    • 韓國
    • 印度
    • 泰國
    • 韓國
    • 台灣
    • 印尼
    • 其他

第9章 競爭環境與分析

  • 主要企業策略分析
  • 新興企業與市場的有利性
  • 合併,收購,協定,及合作
  • 供應商競爭力矩陣

第10章 企業簡介

  • Samsung Electronics Co. Ltd
  • KIOXIA Corporation
  • Micron Technology Inc.
  • SK Hynix Inc.
  • SanDisk Corp. (Western Digital Technologies, Inc)
  • Powerchip Technology Corporation
  • Cypress Semiconductor Corporation
  • GigaDevice Semiconductor
  • Winbond Electronics Corporation
  • ATP Electronics Inc
目錄
Product Code: KSI061612435

The NAND flash memory market is projected to grow at a CAGR of 9.12% during the forecast period to reach US$95.145 billion by 2027, from US$51.648 billion in 2020.

For large-capacity solid-state memory applications, NAND-flash memory is a non-linear internal macro-cell mode memory with excellent performance and low cost. It has a large storage capacity and a quick rewrite speed, making it ideal for storing massive amounts of information. This technology provides a cost-effective alternative for applications that require high-density solid-state storage. The market for non-volatile Flash is dominated by NAND flash design combined with NOR Flash construction. As a result, NAND Flash's many features, such as low power, scalable design, cost-effectiveness, and high density, make it an ideal option to meet the demand for new multimedia products entering the international market. Furthermore, modern memory systems migrate to NAND flash to take advantage of various benefits, including lower cost and increased density for high-performance applications. It has also recently been developed and marketed for a variety of memory applications, including mobile phones, solid-state drives, MP3/PMP players, flash memory cards, and USB flash drives.

The increase in the number of PCs, smartphones, and other electronic devices is a major factor driving the growth of the NAND flash market.

The growth of PCs and smartphones has resulted in a substantial increase in NAND flash consumption, which can be attributed to the increase in average capacity in smartphones. This is expected to boost the market for NAND flash packaging, which will impact memory packaging demand. For instance, as per Ericsson, there are already over six billion smartphone users worldwide, with several hundred million more expected in the next years. The countries with the most smartphone users are India, China, and the United States. By 2026, the number of smartphone users is predicted to increase to 7516 million. Gesture control, fingerprint scanners, and GPS are among the technologies manufacturers include in their products. This is driving up the demand for NAND flash memory, used in smartphones as a code storage medium. With 5G wireless connectivity on the way, smartphone usage is expected to surge, necessitating the continual development of new models.

Other consumer goods such as tablets, cameras, automotive systems, industrial equipment, sensors, and medical appliances depend on flash memory, which is constructed into the CPUs and stores data and code. The trend toward flash-based storage will continue to increase as the need for massive data processing for artificial intelligence, and machine learning applications grows. The new Microsoft Windows 11 operating system, introduced in October 2021, will assist promote NAND sales since new microprocessors for Windows 11 PCs will be needed to have greater memory, propelling the growth of the NAND flash memory market.

The increasing innovation in the market is also expected to grow the demand for NAND flash memory during the forecast period. For example, Micron released the world's first 176-layer NAND Universal Flash Storage (UFS) 3.1 mobile solution in July 2021. With up to 75 percent faster sequential write and random read performance than previous generations, Micron's discrete UFS 3.1 mobile NAND, intended for high-end and flagship phones, unlocks 5G's potential, permitting downloads of two-hour 4K movies in as short as 9.6 seconds. Similarly, in August 2019, Samsung unveiled its sixth-generation V-NAND memory, with over 100 active layers to increase capacity and density.

By region, the Asia Pacific is expected to hold a notable share in the NAND flash memory market during the forecast period.

Asia Pacific is expected to have a significant share in the NAND flash memory market. Almost all end-user applications in the region are in high demand, driven by the need for smartphones in several developing countries in the region, such as China, India, and Indonesia. For instance, consumer electronics and appliance sales climbed by 23.5 percent in India in the third quarter of FY21 compared to the same period the previous fiscal year, according to the Retailers Association of India (RAI). Furthermore, semiconductor fabrication facilities in countries like China, Korea, and Singapore are flourishing. Several global memory makers have invested a significant amount of resources in the Chinese market, aided by government initiatives such as Made in China 2025. The country's ambitious objectives for the forecast period include attaining USD 305 billion in semiconductor output by 2030 and achieving at least 80% of local semiconductor demand, which is intended to encourage more investment. As a result of these developments in numerous nations, regional competitors are stepping up their expansion attempts. For example, in February 2019, SK Hynix, one of the world's leading memory-chip manufacturers, announced plans to invest a massive USD 106 billion in South Korea, principally to build four new semiconductor fabrication units.

COVID-19 Insights

The pandemic has not severely influenced the market for NAND flash memory. This is due to the increase in the smartphone market, 5G adoption, and the introduction of SSD-based next-generation consoles. The outbreak did not significantly impact the production of China-based NAND flash suppliers. This is because the plants are highly automated and have low workforce requirements. Because semiconductor fabrication factories had national special licenses, foundry production was provided to clients in China. These enable them to export their wares throughout China, including in quarantined cities.

Market Segmentation:

  • By Type

Single Level Cell (SLC)

Multi-Level Cell (MLC)

Triple Level Cell (TLC)

  • By Structure

2D Structure

3D Structure

  • By Application

Smartphone

SSD

Memory Card

Tablet

Other Applications

  • By Geography

North America

  • USA
  • Canada
  • Mexico

South America

  • Brazil
  • Argentina
  • Others

Europe

  • Germany
  • France
  • United Kingdom
  • Spain
  • Others

Middle East and Africa

  • Saudi Arabia
  • Israel
  • Others

Asia Pacific

  • China
  • Japan
  • South Korea
  • India
  • Thailand
  • South Korea
  • Taiwan
  • Indonesia
  • Others

TABLE OF CONTENTS

1. INTRODUCTION

  • 1.1. Market Definition
  • 1.2. Market Segmentation

2. RESEARCH METHODOLOGY

  • 2.1. Research Data
  • 2.2. Assumptions

3. EXECUTIVE SUMMARY

  • 3.1. Research Highlights

4. MARKET DYNAMICS

  • 4.1. Market Drivers
  • 4.2. Market Restraints
  • 4.3. Porter's Five Forces Analysis
    • 4.3.1. Bargaining Power of Suppliers
    • 4.3.2. Bargaining Powers of Buyers
    • 4.3.3. Threat of Substitutes
    • 4.3.4. Threat of New Entrants
    • 4.3.5. Competitive Rivalry in Industry
  • 4.4. Industry Value Chain Analysis

5. NAND FLASH MEMORY MARKET, BY TYPE 

  • 5.1. Introduction
  • 5.2. Single-Level Cell (SLC)
  • 5.3. Multi-Level Cell (MLC)
  • 5.4. Triple-Level Cell (TLC)

6. NAND FLASH MEMORY MARKET, BY STRUCTURE 

  • 6.1. Introduction
  • 6.2. 2D Structure
  • 6.3. 3D Structure

7. NAND FLASH MEMORY MARKET, BY APPLICATION

  • 7.1. Introduction
  • 7.2. Smartphone
  • 7.3. SSD
  • 7.4. Memory Card
  • 7.5. Tablet
  • 7.6. Other Applications

8. NAND FLASH MEMORY MARKET, BY GEOGRAPHY

  • 8.1. Introduction
  • 8.2. North America
    • 8.2.1. United States
    • 8.2.2. Canada
    • 8.2.3. Mexico
  • 8.3. South America
    • 8.3.1. Brazil
    • 8.3.2. Argentina
    • 8.3.3. Others
  • 8.4. Europe
    • 8.4.1. Germany
    • 8.4.2. France
    • 8.4.3. United Kingdom
    • 8.4.4. Spain
    • 8.4.5. Others
  • 8.5. Middle East and Africa
    • 8.5.1. Saudi Arabia
    • 8.5.2. Israel
    • 8.5.3. Others
  • 8.6. Asia Pacific
    • 8.6.1. China
    • 8.6.2. Japan
    • 8.6.3. South Korea
    • 8.6.4. India
    • 8.6.5. Thailand 
    • 8.6.6. South Korea
    • 8.6.7. Taiwan 
    • 8.6.8. Indonesia
    • 8.6.9. Others

9. COMPETITIVE ENVIRONMENT AND ANALYSIS

  • 9.1. Major Players and Strategy Analysis
  • 9.2. Emerging Players and Market Lucrativeness
  • 9.3. Mergers, Acquisition, Agreements, and Collaborations
  • 9.4. Vendor Competitiveness Matrix

10. COMPANY PROFILES

  • 10.1. Samsung Electronics Co. Ltd
  • 10.2. KIOXIA Corporation
  • 10.3. Micron Technology Inc.
  • 10.4. SK Hynix Inc.
  • 10.5. SanDisk Corp. (Western Digital Technologies, Inc)
  • 10.6. Powerchip Technology Corporation
  • 10.7. Cypress Semiconductor Corporation
  • 10.8. GigaDevice Semiconductor 
  • 10.9. Winbond Electronics Corporation
  • 10.10. ATP Electronics Inc