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市場調查報告書

Power SiC (MOSFET - SBD - Module):專利情勢分析

Power SiC: MOSFETs - SBDs - Modules, Patent Landscape Analysis

出版商 KnowMade 商品編碼 778077
出版日期 內容資訊 英文 PDF >130 slides, Excel file with >3,800 patents
商品交期: 最快1-2個工作天內
價格
Power SiC (MOSFET - SBD - Module):專利情勢分析 Power SiC: MOSFETs - SBDs - Modules, Patent Landscape Analysis
出版日期: 2019年01月21日內容資訊: 英文 PDF >130 slides, Excel file with >3,800 patents
簡介

依預測,SiC市場規模將從2017年的3億200萬美元,成長至2023年的15億美元以上,共成長31%的CAGR (複合年均增長率) 。

本報告調查了以SiC為基礎的電力電子(MOSFET─蕭特基二極體(SBD)─電力模組)相關專利情勢,並分析了專利情勢概要、主要專利申請人、最活躍的企業、部門別分析、以及新加入企業等。

介紹

調查方法

摘要整理

SiC MOSFET

專利情勢概要

  • 專利公報的歷時性變化
  • 主要的專利申請人
  • 主要專利申請人:據點(國家)別
  • 主要IP企業:專利數量、現在的法律狀況
  • 主要專利申請人的歷時性變化
  • 現在最活躍的企業
  • 對CREE/Wolfspeed的關注
  • 申請專利的地理範圍和相對應的專利現在法律狀況
  • 主要專利受讓人vs.專利授予/未決國
  • 最近已到期的專利
  • 最近快到期的專利
  • 結論

專利分類

  • PLANAR型MOSFET、TRENCH型MOSFET與閘極氧化層
  • PLANAR型SiCMOSFET
  • TRENCH型SiCMOSFET
  • Gateoxide

SiC蕭特基二極體 (SBD)

  • 專利申請人的歷時性變化
  • 專利受讓人的IP領袖
  • 主要專利家族
  • 歷史性的專利申請人與近年的專利
  • 新加入企業與其專利
  • 結論

SiC電力模組

  • 專利公報的歷時性變化
  • 主要專利申請人的歷時性變化
  • 專利受讓人的IP領袖
  • 全SiC電力模組
  • 混合SiC電力模組
  • IP領導企業的投資組合
  • 對新加入企業的關注
  • 結論

結論

KNOWMADE的發表

目錄

Power SiC intellectual property: leadership of Japanese players, strong presence of automotive companies, and Chinese new entrants

The 2016-2018 period has been crucial for the whole SiC industry. SiC MOSFETs, commercially available for several years, are gaining the confidence of numerous customers and have clearly begun to penetrate into different applications. They follow the first commercially available SiC diodes that appeared on the market over 18 years ago and gradually changed the market. According to Yole Développement's report ‘Power SiC 2018’, the SiC device market is expected to grow steadily, from $302M in 2017 to more than $1.5B in 2023, at a Compound Annual Growth Rate (CAGR) of 31%. In this report, Knowmade has thoroughly investigated the patent landscape related to SiC-based power electronics, covering MOSFETs, Schottky Barrier Diodes (SBDs) and power modules. Today, there is a dichotomy in power SiC patents, with new activity from Chinese players on one side and leadership of Japanese players and the strong presence of automotive companies on the other.

Japanese integrators are leading SiC MOSFET-related patenting activity

We witnessed a remarkable acceleration in patent filing related to SiC MOSFETs between 2011 and 2015, concomitant with the commercialization of the first SiC MOSFET products. Japanese integrators - especially Denso and Fuji Electric - have taken the lead in SiC MOSFET related patenting activity. China has entered the SiC MOSFET patent landscape in recent years, starting with R&D players in 2011, who were followed by major state-owned integrator companies in 2015 such as State Grid Corporation of Chine (SGCC), CRRC and SiC pure player foundry Century Goldray, which was established in 2010 to address the whole power SiC supply chain. A common feature of these new entrants is that they intend to develop IP on both planar and trench MOSFET structures. Taiwan has a long standing R&D player in SiC MOSFETs with ITRI, but there was no industrial player until 2016, when Hestia Power emerged, focused on cost effective planar junction barrier Schottky (JBS) diode-integrated MOSFET structures. We note that current leading SiC device makers like Cree/Wolfspeed, Rohm, Infineon and STMicroelectonics own some key patents but do not necessarily have strong IP leadership.

Planar SiC MOSFETs vs. Trench SiC MOSFETs

CREE/Wolfspeed has taken the lead in the planar SiC MOSFET IP race, well ahead of its main competitors Mitsubishi Electric and Fuji Electric. The analysis of Cree's patent portfolio shows it can effectively limit patenting activity in the field and control the freedom-to-operate in most countries including Japan. In fact, patenting activity from competitors is not ramping up and does not threaten CREE's IP leadership. The strong leadership of CREE/Wolfspeed as well as the growing maturity of planar SiC MOSFET technology could explain a slowdown in patenting activity since 2015.

Denso leads the IP race in trench SiC MOSFETs, well ahead of Fuji Electric. However, the latter could seriously challenge in coming years, provided that a significant number of its pending patent applications are granted. The situation differs from planar SiC MOSFETs, with various patent applicants such as Toyota Motor, Toyota Central R&D Laboratories (CRDL), Sumitomo Electric and Rohm still active. There seems to be more room for challengers in the trench SiC MOSFET IP competition, although Denso is actively strengthening its leadership through the collaboration with Toyota Motor and Toyota CRDL in the context of the acceleration of SiC power technologies' development for electric and hybrid electric vehicle (EV/HEV) applications. CREE/Wolfspeed's IP portfolio is relatively small in trench SiC MOSFETs with respect to planar SiC MOSFETs, but the company owns several key patents as it started to patent important inventions before most competitors. A significant fraction of patents related to trench SiC MOSFETs concern the protection of the gate oxide material from electric field concentration in certain portions of the gate. In this report we go through recent developments from major IP players to address reliability issues due to gate oxides.

SiC SBDs: revealing the recent patenting activity from key players and new entrants

CREE/Wolfspeed and Mitsubishi Electric share the IP leadership in SiC SBDs, and with Fuji Electric and Sumitomo Electric they are currently the most active patent applicants. In this report we detail the recent patents from key IP players and new entrants. Most patent applicants address reliability issues related to the edge termination regions, including Mitsubishi Electric, Fuji Electric, Toshiba and Panasonic. Additionally, both CREE/Wolfspeed and Mitsubishi Electric are developing Schottky devices with a superjunction structure. Some new inventions deal with increasing current capability of JBS diodes, including from Panasonic, Denso, Fuji Electric, and Infineon, and improving the stability when the device temperature rises, in patents from Panasonic and Fuji Electric. New entrants are exclusively Chinese players, including Century Goldray and SGCC. Their patents mainly relate to JBS diodes and are only filed in China for the moment.

Full SiC power modules

The share of full SiC module-related patents has been growing since 2012. Mitsubishi Electric is leading the SiC power module IP race with key patents mostly focused on hybrid Si/SiC modules. In this report we detail the patent portfolio of the main IP leaders like Mitsubishi Electric, Hitachi, Rohm and CREE/Wolfspeed and the new entrant Danfoss Silicon Power. Rohm's recent patenting activity puts the emphasis on the use of full SiC modules in electric vehicles, stressing solutions to efficient heat dissipation, the reliability of power module assemblies operating at high temperature and the reduction of stray inductance. Danfoss filed four patents related to full SiC MOSFET modules in 2018, focusing on enhancement of performance through optimized layout of interconnects inside the module.

COMPANIES MENTIONED IN THE REPORT (NON-EXHAUSTIVE)

Denso, Cree, Wolfspeed, Fuji Electric, Toyota Motor, Mitsubishi Electric, Sumitomo Electric, Rohm, General Electric, Hitachi, Toyota Central R&D Labs, Xidian University, Panasonic, Hyundai Motor, CRRC Times Electric, Century Goldray Semiconductor, Infineon, State Grid Corporation of China (SGCC), Hestia Power, Nissan Motor, Siemens, NXP, Toshiba, Philips, Microsemi, Littelfuse, IXYS, Monolith Semiconductor, Renesas Electronics, Bosch, ABB, Shindengen Electric Manufacturing, Showa Denko, Kansai Electric Power, On Semiconductor, Beijing Yandong Microelectronic, Tyco Tianrun Semiconductor Technology, Shenzhen Basic Semiconductor, Sharp, Guangdong Midea, Siemens, Danfoss Silicon Power, Wancheng Electric Vehicle Operation, Yangzhou Guoyang Electronic, Tyco Tianrun Semiconductor Technology, Schneider Electric, Dynex Semiconductor, Honda Motor, etc.

TABLE OF CONTENTS

INTRODUCTION

  • Market trends
  • Scope of the report
  • Objectives of the report
  • Key feature of the report
  • Main assignees cited in the report

METHODOLOGY

  • Patent search, selection and analysis
  • Terminology for patent analysis

EXECUTIVE SUMMARY

SiC MOSFETs

Patent landscape overview

  • Time evolution of patent publications
  • Leading patent applicants
  • Main patent applicants by country of head office
  • Main IP players: Number of patents and current legal status
  • Time evolution of main patent applicants
  • Most current active players
  • Focus on CREE/Wolfspeed
  • New entrants
  • Focus on Hestia Power
  • Geographic coverage of patent filings and
  • corresponding current legal status of patents
  • Main patent assignees vs. Countries of granted/pending patents
  • Patents recently expired
  • Patents near expiration date
  • Conclusion

Patent segmentation

  • For each planar MOSFET, trench MOSFET and gate oxide:
    • Time evolution of patent publications
    • Main patent assignees
    • IP trends for main patent applicants
  • Planar SiCMOSFET70
    • IP leadership of patent assignees
    • IP blocking potential of patent assignees
    • Strength of patent portfolios
    • Key patent families
  • Trench SiCMOSFET75
    • IP leadership of patent assignees
    • IP blocking potential of patent assignees
    • Strength of patent portfolios
    • Key patent families
  • Gateoxide80
  • Recent developments from major IP players to address reliability issues due to gate oxide in SiC trench MOSFET.

SiC SCHOTTKY BARRIER DIODE

  • Time evolution of patent applicants
  • IP leadership of patent assignees
  • Key patent families
  • Historical patent applicants and their recent patents
  • New entrants and their patents
  • Conclusion

SiC POWER MODULE

  • Time evolution of patent publications
  • Time evolution of main patent applicants
  • IP leadership of patent assignees
  • Full SiC power modules
  • Hybrid SiC power modules
  • Key patent families
  • Review of portfolio for IP leaders
  • Focus on new entrants
  • Conclusion

CONCLUSION

KNOWMADE PRESENTATION