市場調查報告書
商品編碼
1087280

絕緣柵雙極電晶體和金屬氧化物場效電晶體的全球市場:產業分析,趨勢,市場規模,及預測(∼2028年)

Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market: Global Industry Analysis, Trends, Market Size, and Forecasts up to 2028

出版日期: | 出版商: Infinium Global Research (IGR) | 英文 100 Pages | 商品交期: 最快1-2個工作天內

價格
  • 全貌
  • 簡介
  • 目錄
簡介

本報告提供全球絕緣柵雙極電晶體與金屬氧化物場效電晶體市場調查,提供市場概要,市場規模和預測,趨勢,成長要素及阻礙因素,類型·電力額定功率·用途·各地區的分析等全面性資訊。

目錄

第1章 序文

  • 報告的說明
  • 調查方法
  • 研究途徑

第2章 摘要整理

  • 絕緣柵雙極電晶體和金屬氧化物場效電晶體市場概況
  • 絕緣柵雙極電晶體和金屬氧化物場效電晶體的市場預測
  • 絕緣柵雙極電晶體和金屬氧化物場效電晶體市場地區的亮點

第3章 全球絕緣柵雙極電晶體和金屬氧化物場效電晶體市場概要

  • 簡介
  • 市場動態
    • 促進因素
    • 阻礙因素
    • 市場機會
  • 與絕緣柵雙極電晶體對金屬氧化物場效電晶體市場上COVID-19的影響分析
  • 波特的五力分析
  • IGR-成長矩陣分析
    • IGR-各類型的成長矩陣分析
    • IGR-各電力額定功率的成長矩陣分析
    • IGR-各用途的成長矩陣分析
    • IGR-各地區的成長矩陣分析
  • 絕緣柵雙極電晶體與金屬氧化物場效電晶體市場價值鏈分析

第4章 絕緣柵雙極電晶體與金屬氧化物場效電晶體市場宏指示器分析

第5章 全球絕緣柵雙極電晶體和金屬氧化物場效電晶體市場:各類型

  • 分離式IGBT
  • IGBT模組

第6章 全球絕緣柵雙極電晶體和金屬氧化物場效電晶體市場:各電力額定功率

  • 高電力
  • 中電力
  • 低電力

第7章 全球絕緣柵雙極電晶體和金屬氧化物場效電晶體市場:各用途

  • 能源·電力
  • 家電
  • 變頻器·UPS
  • 電動車
  • 產業系統
  • 其他

第8章 全球絕緣柵雙極電晶體和金屬氧化物場效電晶體市場:各地區(2022年∼2028年)

  • 北美
    • 各類型的北美的絕緣柵雙極電晶體和金屬氧化物場效電晶體市場
    • 各電力額定功率的北美的絕緣柵雙極電晶體和金屬氧化物場效電晶體市場
    • 各用途的北美的絕緣柵雙極電晶體和金屬氧化物場效電晶體市場
    • 各國北美的絕緣柵雙極電晶體和金屬氧化物場效電晶體市場
  • 歐洲
    • 各類型的歐洲的絕緣柵雙極電晶體和金屬氧化物場效電晶體市場
    • 各電力額定功率的歐洲的絕緣柵雙極電晶體和金屬氧化物場效電晶體市場
    • 各用途的歐洲的絕緣柵雙極電晶體和金屬氧化物場效電晶體市場
    • 各國歐洲的絕緣柵雙極電晶體和金屬氧化物場效電晶體市場
  • 亞太地區
    • 各類型的亞太地區的絕緣柵雙極電晶體和金屬氧化物場效電晶體市場
    • 各電力額定功率的亞太地區的絕緣柵雙極電晶體和金屬氧化物場效電晶體市場
    • 各用途的亞太地區的絕緣柵雙極電晶體和金屬氧化物場效電晶體市場
    • 各國亞太地區的絕緣柵雙極電晶體和金屬氧化物場效電晶體市場
  • 其他地區
    • 各類型的其他地區的絕緣柵雙極電晶體和金屬氧化物場效電晶體市場
    • 各電力額定功率的其他地區的絕緣柵雙極電晶體和金屬氧化物場效電晶體市場
    • 各用途的其他地區的絕緣柵雙極電晶體和金屬氧化物場效電晶體市場
    • 各子地區的其他地區的絕緣柵雙極電晶體和金屬氧化物場效電晶體市場

第9章 企業簡介和競爭情形

  • 全球絕緣柵雙極電晶體和金屬氧化物場效電晶體市場競爭情形
  • 企業簡介
    • Infineon Technology
    • Mitsubishi Electric
    • ABB Ltd.
    • Toshiba Corporation
    • Renesas Electronics Corporation
    • STMicroelectronics N.V.
    • Fuji Electric
    • Hitachi, Ltd.
    • ROHM Semiconductor
    • NXP Semiconductor N.V.
目錄
Product Code: IS0052

The report on the global insulated gate bipolar transistors and metal oxide field effect transistor market provides qualitative and quantitative analysis for the period from 2020 to 2028. The report predicts the global insulated gate bipolar transistors and metal oxide field effect transistor market to grow with a significant CAGR over the forecast period from 2022-2028. The study on insulated gate bipolar transistors and metal oxide field effect transistor market covers the analysis of the leading geographies such as North America, Europe, Asia-Pacific, and RoW for the period of 2020 to 2028.

The report on insulated gate bipolar transistors and metal oxide field effect transistor market is a comprehensive study and presentation of drivers, restraints, opportunities, demand factors, market size, forecasts, and trends in the global insulated gate bipolar transistors and metal oxide field effect transistor market over the period of 2020 to 2028. Moreover, the report is a collective presentation of primary and secondary research findings.

Porter's five forces model in the report provides insights into the competitive rivalry, supplier and buyer positions in the market and opportunities for the new entrants in the global insulated gate bipolar transistors and metal oxide field effect transistor market over the period of 2020 to 2028. Further, IGR- Growth Matrix gave in the report brings an insight into the investment areas that existing or new market players can consider.

Report Findings

1) Drivers

  • Rising applications of IGBT
  • Rising household appliances consumption
  • Increasing adoption of electric vehicles

2) Restraints

  • Latch up issue in IGBT

3) Opportunities

  • Proactive government initiatives to establish HVDCS and intelligent grids.
  • Demand for consumer electronics

Research Methodology

A) Primary Research

Our primary research involves extensive interviews and analysis of the opinions provided by the primary respondents. The primary research starts with identifying and approaching the primary respondents, the primary respondents are approached include

  • 1. Key Opinion Leaders associated with Infinium Global Research
  • 2. Internal and External subject matter experts
  • 3. Professionals and participants from the industry

Our primary research respondents typically include

  • 1. Executives working with leading companies in the market under review
  • 2. Product/brand/marketing managers
  • 3. CXO level executives
  • 4. Regional/zonal/ country managers
  • 5. Vice President level executives.

B) Secondary Research

Secondary research involves extensive exploring through the secondary sources of information available in both the public domain and paid sources. At Infinium Global Research, each research study is based on over 500 hours of secondary research accompanied by primary research. The information obtained through the secondary sources is validated through the crosscheck on various data sources.

The secondary sources of the data typically include

  • 1. Company reports and publications
  • 2. Government/institutional publications
  • 3. Trade and associations journals
  • 4. Databases such as WTO, OECD, World Bank, and among others.
  • 5. Websites and publications by research agencies

Segment Covered

The global insulated gate bipolar transistors and metal oxide field effect transistor market is segmented on the basis of type, power rating, and application.

The Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Type

  • Discrete IGBT
  • IGBT Modules

The Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Power Rating

  • High Power
  • Medium Power
  • Low Power

The Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Application

  • Energy and Power
  • Consumer Electronics
  • Inverter and UPS
  • Electrical Vehicle
  • Industrial System
  • Others

Company Profiles

The companies covered in the report include

  • Infineon Technology
  • Mitsubishi Electric
  • ABB Ltd.
  • Toshiba Corporation
  • Renesas Electronics Corporation
  • STMicroelectronics N.V.
  • Fuji Electric
  • Hitachi, Ltd.
  • ROHM Semiconductor
  • NXP Semiconductor N.V.

What does this Report Deliver?

1. Comprehensive analysis of the global as well as regional markets of the insulated gate bipolar transistors and metal oxide field effect transistor market.

2. Complete coverage of all the segments in the insulated gate bipolar transistors and metal oxide field effect transistor market to analyze the trends, developments in the global market and forecast of market size up to 2028.

3. Comprehensive analysis of the companies operating in the global insulated gate bipolar transistors and metal oxide field effect transistor market. The company profile includes analysis of product portfolio, revenue, SWOT analysis and latest developments of the company.

4. IGR- Growth Matrix presents an analysis of the product segments and geographies that market players should focus to invest, consolidate, expand and/or diversify.

Table of Contents

1. Preface

  • 1.1. Report Description
  • 1.2. Research Methods
  • 1.3. Research Approaches

2. Executive Summary

  • 2.1. Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Highlights
  • 2.2. Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Projection
  • 2.3. Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Regional Highlights

3. Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Overview

  • 3.1. Introduction
  • 3.2. Market Dynamics
    • 3.2.1. Drivers
    • 3.2.2. Restraints
    • 3.2.3. Opportunities
  • 3.3. Analysis of COVID-19 impact on the Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market
  • 3.4. Porter's Five Forces Analysis
  • 3.5. IGR-Growth Matrix Analysis
    • 3.5.1. IGR-Growth Matrix Analysis by Type
    • 3.5.2. IGR-Growth Matrix Analysis by Power Rating
    • 3.5.3. IGR-Growth Matrix Analysis by Application
    • 3.5.4. IGR-Growth Matrix Analysis by Region
  • 3.6. Value Chain Analysis of Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market

4. Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Macro Indicator Analysis

5. Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Type

  • 5.1. Discrete IGBT
  • 5.2. IGBT Modules

6. Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Power Rating

  • 6.1. High Power
  • 6.2. Medium Power
  • 6.3. Low Power

7. Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Application

  • 7.1. Energy and Power
  • 7.2. Consumer Electronics
  • 7.3. Inverter and UPS
  • 7.4. Electrical Vehicle
  • 7.5. Industrial System
  • 7.6. Others

8. Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Region 2022-2028

  • 8.1. North America
    • 8.1.1. North America Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Type
    • 8.1.2. North America Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Power Rating
    • 8.1.3. North America Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Application
    • 8.1.4. North America Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Country
  • 8.2. Europe
    • 8.2.1. Europe Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Type
    • 8.2.2. Europe Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Power Rating
    • 8.2.3. Europe Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Application
    • 8.2.4. Europe Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Country
  • 8.3. Asia-Pacific
    • 8.3.1. Asia-Pacific Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Type
    • 8.3.2. Asia-Pacific Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Power Rating
    • 8.3.3. Asia-Pacific Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Application
    • 8.3.4. Asia-Pacific Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Country
  • 8.4. RoW
    • 8.4.1. RoW Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Type
    • 8.4.2. RoW Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Power Rating
    • 8.4.3. RoW Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Application
    • 8.4.4. RoW Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Sub-region

9. Company Profiles and Competitive Landscape

  • 9.1. Competitive Landscape in the Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market
  • 9.2. Companies Profiles
    • 9.2.1. Infineon Technology
    • 9.2.2. Mitsubishi Electric
    • 9.2.3. ABB Ltd.
    • 9.2.4. Toshiba Corporation
    • 9.2.5. Renesas Electronics Corporation
    • 9.2.6. STMicroelectronics N.V.
    • 9.2.7. Fuji Electric
    • 9.2.8. Hitachi, Ltd.
    • 9.2.9. ROHM Semiconductor
    • 9.2.10. NXP Semiconductor N.V.