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鐵電記憶體 (FeRAM)的全球市場 - 2016∼2020年

Global Ferroelectric RAM Market 2016-2020

出版商 TechNavio (Infiniti Research Ltd.) 商品編碼 369172
出版日期 內容資訊 英文 66 Pages
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鐵電記憶體 (FeRAM)的全球市場 - 2016∼2020年 Global Ferroelectric RAM Market 2016-2020
出版日期: 2016年08月29日 內容資訊: 英文 66 Pages

鐵電記憶體 (FeRAM)的全球市場預計從2016年到2020年的期間以6.4%的年複合成長率持續成長。

本報告以鐵電記憶體 (FeRAM)的全球市場為焦點,提供推動市場成長要素和市場課題,透過市場趨勢,以及市場競爭情形的詳細調查,進行市場現狀分析以及從2016年到2020年的未來預測。

第1章 摘要整理

第2章 本報告涵蓋範圍

  • 市場概要
  • 主要供應商產品

第3章 市場調查手法

  • 調查手法
  • 經濟指標

第4章 序論

  • 市場相關重要事項

第5章 現行記憶體技術及新技術

第6章 供應鏈

第7章 鐵電記憶體 (FeRAM)的全球市場 - 市場概況

  • 市場規模及未來預測
  • 波特的五力分析

第8章 鐵電記憶體 (FeRAM)的全球市場 - 各地區市場分類

  • 南北美洲地區市場
  • 亞太地區市場
  • 歐洲、中東、非洲地區市場
  • 年複合成長率比較

第9章 鐵電記憶體 (FeRAM)的全球市場 - 成長推動因素

  • 低功率
  • 汽車用FeRAM需求擴大
  • 智慧卡的採用的增加
  • FeRAM在醫療用途的利用增加

第10章 推動市場成長要素帶來的影響

第11章 鐵電記憶體 (FeRAM)的全球市場 - 課題

  • 數據保存時間短
  • 其他新技術的出現
  • 製造成本高

第12章 推動市場成長要素和市場課題帶來的影響

第13章 鐵電記憶體 (FeRAM)的全球市場 - 趨勢

  • 使用了CMOS流程的新FeRAM設計法的崛起
  • 使用了FeRAM的智慧電表的一般化發展
  • 高速FeRAM的開發

第14章 業者情勢

  • 市場競爭方案
  • 業者情勢

第15章 附錄

第16章 關於Technavio

Product Code: IRTNTR9182

About Ferroelectric RAM

Ferroelectric random access memory (ferroelectric RAM) is a type of solid-state data storage memory which is a medium for computer-related applications. It is a non-volatile memory, which makes it different from the other types of RAM like DRAM that are used in personal computers. Memories are a part of application segment in ferroelectric films including microsystems, and high frequency components (electrical).

Technavio's analysts forecast the global ferroelectric RAM market to grow at a CAGR of 6.4% during the period 2016-2020.

Covered in this report

The report covers the present scenario and the growth prospects of the global ferroelectric RAM market for 2016-2020. To calculate the market size, the report considers the revenue generated from shipment of F-RAM hardware and software.

The market is divided into the following segments based on geography:

  • Americas
  • APAC
  • EMEA

Technavio's report, Global ferroelectric RAM market 2016-2020, has been prepared based on an in-depth market analysis with inputs from industry experts. The report covers the market landscape and its growth prospects over the coming years. The report also includes a discussion of the key vendors operating in this market.

Key vendors

  • Cypress semiconductor
  • Fujitsu
  • IBM
  • Texas Instruments

Other Prominent Vendors

  • Infineon technologies AG
  • LAPIS semiconductor
  • Toshiba

Market driver

  • Increasing demand in automotive applications
  • For a full, detailed list, view our report

Market challenge

  • Increasing complexity in RAM design
  • For a full, detailed list, view our report

Market trend

  • Growing need for high-speed memory devices
  • For a full, detailed list, view our report

Key questions answered in this report

  • What will the market size be in 2020 and what will the growth rate be?
  • What are the key market trends?
  • What is driving this market?
  • What are the challenges to market growth?
  • Who are the key vendors in this market space?
  • What are the market opportunities and threats faced by the key vendors?
  • What are the strengths and weaknesses of the key vendors?

You can request one free hour of our analyst's time when you purchase this market report. Details are provided within the report.

Table of Contents

PART 01: Executive summary

  • Highlights

PART 02: Scope of the report

  • Market overview
  • Top-vendor offerings

PART 03: Market research methodology

  • Research methodology
  • Economic indicators

PART 04: Introduction

  • Key market highlights

PART 05: Current emerging memory technologies

PART 06: Supply chain

PART 07: Market landscape

  • Market size and forecast
  • Five force analysis

PART 08: Geographical segmentation

  • Americas
  • APAC
  • EMEA
  • CAGR comparison

PART 09: Market drivers

  • Low power consumption
  • Growing demand for FeRAM in automotive applications
  • Increased adoption in smart cards
  • Increased usage of FeRAM in medical applications

PART 10: Impact of drivers

PART 11: Market challenges

  • Short data storage time
  • Emergence of other new technologies
  • High cost of production

PART 12: Impact of drivers and challenges

PART 13: Market trends

  • Emergence of new FeRAM design using CMOS process
  • Growing popularity of FeRAM-based smart meters
  • Development of high-speed FeRAM

PART 14: Vendor landscape

  • Competitive scenario
  • Vendor landscape

PART 15: Appendix

  • List of abbreviations

PART 16: Explore Technavio

List of Exhibits

  • Exhibit 01: Product offerings
  • Exhibit 02: Comparison of NOR and NAND flash memories
  • Exhibit 03: Classification of semiconductor memory
  • Exhibit 04: Market summary
  • Exhibit 05: Classification of current emerging memory technologies
  • Exhibit 06: Basic MRAM cell structure
  • Exhibit 07: Basic STT-MRAM
  • Exhibit 08: Basic architecture of FeRAM
  • Exhibit 09: Basic PCRAM cell structure
  • Exhibit 10: Basic RRAM cell structure
  • Exhibit 11: Structure of polymer memory device
  • Exhibit 12: Racetrack memory diagram with U-shaped magnetic nanowires
  • Exhibit 13: Comparison of emerging major non-volatile memory
  • Exhibit 14: Device industry value chain
  • Exhibit 15: Marketing and sales management
  • Exhibit 16: Global FeRAM market 2015-2020 ($ millions)
  • Exhibit 17: Five force analysis
  • Exhibit 18: Global FeRAM market segmentation by geography 2016-2020
  • Exhibit 19: Global FeRAM market segmentation by geography 2015-2020 ($ millions)
  • Exhibit 20: FeRAM market in Americas 2015-2020 ($ millions)
  • Exhibit 21: FeRAM market in APAC 2015-2020 ($ millions)
  • Exhibit 22: FeRAM market in EMEA 2015-2020 ($ millions)
  • Exhibit 23: CAGR comparison
  • Exhibit 24: Basic block diagram of EDR
  • Exhibit 25: Impact of drivers
  • Exhibit 26: Other new technologies
  • Exhibit 27: Impact of drivers and challenges
  • Exhibit 28: Global smart meter market by revenue 2015-2020 ($ billions)
  • Exhibit 29: Global smart meter market by shipments 2015-2020 (millions of units)
  • Exhibit 30: Opportunities in the coming years
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