A power semiconductor device is used as a switch (controlling power on or off) or rectifier (converting AC to DC) in power electronics, for example, in frequency conversion home appliance, EVs, EV chargers, welding inverter, industrial robots, etc. As of 2019, Power semiconductors was a US$41bn global market, or c.10% of global semiconductor market size.
Power semiconductors could be divided into two parts: (1) Power discrete and (2) Power IC, with each parts roughly contributing 50% of the power semiconductors market size by revenue. When a power semiconductor device is in the form of integrated circuit, it is called Power IC, otherwise referred to as a power discrete.
Power semiconductors is a US$41bn market globally, and within this market, we are positive on IGBTs and MOSFETs, given the growing market driven by (1) rising energy efficiency requirement in multiple applications such as EV, industrial control, and home appliances, and (2) the rising demand for Chinese suppliers driven by a large domestic market and multiple Chinese brands in home appliances, automobiles and industrial look to diversify their supply chains amid growing trade tensions.
The global IGBT leaders usually cover a full range of applications from consumer electronics, automotive, and industrial controls, to power generation, infrastructure, and railway. Each of these sectors is analyzed in the report.
The global MOSFET leaders usually cover the full range of applications from consumer electronics, automotive, computing, motor driver, power supply, telecom network, EV charging, LED lighting, to medical. Each of these sectors is analyzed in the report.
The rapid growth of the power semiconductor market in recent years has been driven by the proliferation of computer and consumer electronics, such as desktop computers, notebooks, netbooks, smartphones, flat panel displays and portable media players that require sophisticated power management to improve power efficiency and extend battery life.
This report analyzes and forecasts the worldwide markets of power semiconductors by type, geographic region and application. The market by substrate type also focuses on new SiC and GaN materials and fabrication.
Table of Contents
Chapter 1. Introduction
- 1.1. Manufacturing Processes Are Differentiation Factors
- 1.2. Vertical Structure Devices Differ From Usual MOS Planar Structure
- 1.3. Super Junction Processes
- 1.4. GaN and SiC Semiconductors
Chapter 2. Applications of Power Semiconductors
- 2.1. Power Semiconductors in Renewable Energy
- 2.2. Power Semiconductors in Hybrid & Electric Vehicles
- 2.2.1. Automotive Megatrends
- 2.2.2. Wide Bandgap Devices for HEVs/EVs
- 2.3. Power Semiconductors in LED Lighting
- 2.4. Power Semiconductors in Industrial Motor Drives
- 2.5. Power Semiconductors in Smart Home Market
- 2.6. GaN and SiC Market Forecast For End Applications
Chapter 3. Market Analysis
- 3.1. Position of Power Semiconductors in Semiconductor Market
- 3.2. Growth Potential of IGBTs and Power MOSFETs
- 3.3. IGBT Market
- 3.3.1. IGBT Technology Trends
- 3.3.2. IGBT TAM
- 3.3.3. IGBT Market Growth By Applications
- 3.3.3.1 Automotive
- 3.3.3.2 Power Generation And Grid
- 3.3.3.3 Consumer Electronics
- 3.3.3.4 Industrial Controls
- 3.3.3.5 Railway/Train
- 3.3.3.6 EV Charging Systems
- 3.3.4 IGBT Competitive Landscape
- 3.3.4.1 Global And China Market Share
- 3.3.4.2 IGBT Business Model
- 3.3.4.3 Technology Gap Between China And Global Players
- 3.4. MOSFET TAM
- 3.4.1. MOSFET TAM Methodology
- 3.4.2. MOSFET Market Growth By Applications
- 3.4.2.1 Automotive
- 3.4.2.2 EV Charging
- 3.4.2.3 Industrial And Medical
- 3.4.2.4 Consumer
- 3.4.2.5 Telecom Network
- 3.4.3.6 Computing
- 3.4.4. MOSFET Competitive Landscape
- 3.4.4.1 Global And China Market Share
- 3.4.4.2 China Suppliers' Technology/Product Gaps Vs Global Peers
- 3.5. Emerging End Application Markets
- 3.5.1. Electric Vehicles
- 3.5.2. 5G Infrastructure
- 3.4. Wide Bandgap Power Semiconductor Market
Chapter 4. Next-Generation Power Semiconductors
- 4.1. Expectations for Overcoming Silicon's Limitations
- 4.2. Expectations Of SiC and GaN as Next-Generation Substrates
- 4.3. Benefits of Wide Band Gap Semiconductors
- 4.4. SiC versus GaN
- 4.4.1. Material Properties
- 4.4.2. Material Quality
- 4.4.3. SiC Lateral Devices:
- 4.4.4. SiC Vertical Devices
- 4.4.5. GaN Lateral Devices
- 4.5. Fabrication of SiC devices
- 4.5.1. Bulk and Epitaxial Growth of SiC
- 4.5.1.1 Bulk Growth
- 4.5.1.2 Epitaxial Growth
- 4.5.1.3 Defects
- 4.5.2. Surface Preparation
- 4.5.3. Etching
- 4.5.4. Lithography
- 4.5.5. Ion Implantation
- 4.5.6. Surface Passivation
- 4.5.7. Metallization
- 4.6. Fabrication of GaN devices
- 4.6.1. GaN Challenges
- 4.6.1.1 Costs
- 4.6.1.2 Reliability
- 4.6.1.3 Component Packaging and Thermal Reliability
- 4.6.1.4 Control
- 4.6.1.5 Device Modeling
- 4.7. Packaging
Chapter 5. Company Profiles
- 5.1. Power Semiconductor Companies
- 5.1.1. Infineon
- 5.1.2. Mitsubishi
- 5.1.3. Toshiba
- 5.1.4. STMicroelectronics
- 5.1.5. Vishay
- 5.1.6. Fuji Electric
- 5.1.7. Renesas
- 5.1.8. Semikron
- 5.1.9. NXP Semiconductors
- 5.1.10. Hitachi Power Semiconductor Device
- 5.1.11. X-Rel Semiconductor
- 5.1.12. Advanced Linear Devices
- 5.1.13 Nexperia
- 5.1.14. Rohm
- 5.1.15. Sanken Electric
- 5.1.16. Shindengen Electric
- 5.1.17. Microchip Technology
- 5.1.18. GeneSiC Semiconductor
- 5.1.19. Semisouth Laboratories
- 5.1.20. United Silicon Carbide
- 5.1.21. MicroGaN
- 5.1.22. Powerex
- 5.1.23. Nitronix
- 5.1.24. Transform
- 5.1.25. Allegro Microsystems
- 5.1.26. GaN Systems
- 5.1.27 Navitas Semiconductor
- 5.1.28. Alpha and Omega Semiconductor
- 5.1.29. ON Semiconductor
- 5.1.30. Jilin Sino-Microelectronics
- 5.1.31. BYD Microelectronics
- 5.1.32. Yangzhou Yangjie Electronic Technology
- 5.1.33. StarPower
- 5.1.34. Sino Micro
- 5.1.35. Yangjie
- 5.1.36. Jiejie
- 5.1.37. GoodArk
- 5.1.38. NCE Power
- 5.2. SiC Wafer-Related Companies
- 5.3. GaN Wafer-Related Companies