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市場調查報告書

電晶體技術的未來

Future of Transistor Technology

出版商 Frost & Sullivan 商品編碼 599563
出版日期 內容資訊 英文 47 Pages
商品交期: 最快1-2個工作天內
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電晶體技術的未來 Future of Transistor Technology
出版日期: 2017年12月27日 內容資訊: 英文 47 Pages
簡介

本報告提供電晶體技術的最新創新革命調查分析,以主要著寬帶隙 (WBD) 電晶體為焦點,提供技術形勢,應用評估,影響要素,全球趨勢與革新,技術和應用發展藍圖等系統性資訊。

第1章 摘要整理

第2章 技術形勢

  • 目前電子工業的電晶體的技術性意義
  • 電晶體的區分
  • BJT和FET最常所使用的電晶體
  • 應用的多樣性

第3章 寬帶隙 (WBD) 電晶體促進進步

  • WBG晶體管 - 技術意義和區分
  • 電路尺寸和矽限制使WBG半導體的增長成為可能
  • 節能減排和綠色能源新興需求推動了WBG晶體管的發展
  • 妨礙採用WBG晶體管的挑戰
  • SiC和GaN晶體管的比較評估
  • 專利發表趨勢
  • 專利分析推斷:重點關注領域
  • 主要專利持有者推動創新
  • 電子工業中WBG晶體管的實現
  • WBG晶體管部分的資金情況
  • WBG晶體管的供應鏈模型

第4章 革新促進電晶體的開發

  • 高速雙態激光晶體管
  • 透過鑽石晶體管實現高功率應用
  • 基於有機晶體管的AC / DC轉換器
  • 石墨烯場效應晶體管(FET)納米傳感器用於胰島素水平監測
  • 神經元風格執行晶體管
  • 氮化鎵為基礎的高電壓FET
  • 使用氮化鎵的E-HEMT
  • 使用高電子移動性電晶體的下一代RF設備
  • 使用碳為基礎的電晶體的超高速運算
  • 使用彈性電晶體的手機用電子設備
  • 超高速開關SiC MOSFET
  • 使用有機薄膜電晶體的軟性顯示器

第5章 未來的成長機會及策略性預測

  • 電晶體技術的未來發展藍圖
  • Analyst's Desk:WBG電晶體的競爭本質與全球引進方案
  • Analyst's Desk:WBG電晶體的主要吸引力應用與未來的機會

第6章 產業的聯絡處

目錄
Product Code: D7FB

Wide Band Gap Transistor Drive Opportunities in High Power Electronics

Transistors are the fundamental electronic components present in any device. They have evolved over a period of 30 years in size and performance. Their capability to act as a switch or amplify current or voltage has enabled them to serve diverse applications ranging from logic gates in the computer processors to sound amplifiers. Research and development towards improving the performance parameters of transistors and to determine new semiconductor materials apart from silicon is an on-going process. Transistors are being developed in order to support the rapid advancements in technology like wireless charging and energy conversion.

This technology and innovation report offers insights on the recent innovations in the transistor technology. The report focuses mainly on the Wide Band Gap transistors which are opening up new avenues in power electronics industry as a promising alternative for silicon transistors. This report also offers insights on applications that might evolve in the next 5 to 6 years.

Coverage includes:

  • Technology landscape
  • Applications assessment
  • Factors influencing development and adoption-Key drivers and challenges
  • Global trends and innovation indicators
  • Breadth of applications impacted
  • Technology and application roadmaps showing the future prospect of Transistors
  • Strategic insights about market and emerging trends

Table of Contents

1.0 EXECUTIVE SUMMARY

  • 1.1 Research Scope
  • 1.2 Research Methodology
  • 1.2 Research Methodology (continued)
  • 1.3 Key Research Findings
  • 1.3 Key Research Findings (continued)

2.0 TECHNOLOGY LANDSCAPE

  • 2.1 Technological Significance of Transistors in Today's Electronic Industry
  • 2.2 Segmentation of Transistors
  • 2.3 BJT and FET are the Most Commonly Used Transistors
  • 2.4 Application Diversity

3.0 WIDE BAND GAP (WBG) TRANSISTORS ARE DRIVING ADVANCEMENTS

  • 3.1 WBG Transistors - Technological Significance and Segmentation
  • 3.2 Circuit Size and Silicon Limitations Enable growth of WBG Semiconductors
  • 3.3 Energy Savings and Emerging Demand for Green Energy Propels the Development of WBG Transistors
  • 3.4 Challenges Hindering the Adoption of WBG Transistors
  • 3.5 Comparative Assessment of SiC and GaN Transistors
  • 3.6 Patent Publication Trends
  • 3.7 Inference from Patent Analysis: Key Focus Areas
  • 3.8 Key Patent Holders Driving Innovation
  • 3.9 Implementation of WBG Transistors in the Electronics Industry
  • 3.10 Funding Scenarios in WBG Transistor Segment
  • 3.11 Supply Chain Model for WBG Transistors

4.0 INNOVATIONS DRIVING THE DEVELOPMENTS IN TRANSISTOR

  • 4.1 High-speed Bi-state Laser Transistors
  • 4.2 Enabling High Power Applications Through Diamond Transistors
  • 4.3 Organic Transistor-based AC/DC Converter
  • 4.4 Graphene Field Effect Transistor (FET) Nanosensor for Insulin Level Monitoring
  • 4.5 Neuron Styled Executing Transistors
  • 4.6 Gallium Nitride-based High Voltage Field-effect Transistor
  • 4.7 Enhancement Mode High Electron Mobility Transistors (E-HEMTs) using Gallium Nitride
  • 4.8 Next-Gen RF Devices using High Electron Mobility Transistors
  • 4.9 Ultra-fast computing using Carbon-based Transistors
  • 4.10 Portable Electronic Devices using Flexible Transistors
  • 4.11 Ultra-speed Switching SiC MOSFETs
  • 412 Flexible Displays using Organic Thin Film Transistors

5.0 FUTURE GROWTH OPPORTUNITIES AND STRATEGIC PERSPECTIVES

  • 51 Future Roadmap for Transistor Technology
  • 5.2 From the Analyst's Desk: What is the Nature of Competition and Global Adoption Scenario for WBG Transistors?
  • 5.3 From the Analyst's Desk: What are Key Attractive Applications and Future Opportunities for WBG Transistors?

6.0 INDUSTRY CONTACTS

  • 6.1 Key Contacts
  • Legal Disclaimer
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