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3D NAND的成本、投資展望

Cost and Investment Implications of 3D NAND

出版商 Forward Insights 商品編碼 301228
出版日期 內容資訊 英文 112 Pages
商品交期: 最快1-2個工作天內
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3D NAND的成本、投資展望 Cost and Investment Implications of 3D NAND
出版日期: 2014年05月01日 內容資訊: 英文 112 Pages

NAND快閃記憶體產業在技術轉折點的前端。3D NAND成為繼任者,2D NAND達到擴展極限。在2D NAND時代,根本的加工技術(有幾個例外)基本在所有NAND快閃記憶體製造商間是相同的。可是,在3D NAND時代,所有NAND快閃記憶體廠商在實施過程開發各種不同的3D NAND概念。不同的流程影響各種3D NAND技術的投資、製造成本。

本報告提供Samsung、東芝、SK Hynix 及Intel-Micron vs. 16nm 2D NAND的晶圓廠、製造展望詳細的分析,為您概述為以下內容。




  • NAND快閃記憶體技術的演進
  • 3D NAND快閃記憶體單元


  • 技術概要、流程課題


  • 概要
  • CMOS結構
  • 3D記憶體陣列結構
  • 3D概念的BEOL
  • 3D NAND製造中根本的限制


  • 流程複雜性比較


  • 未開發晶圓廠
    • 晶圓廠投資
    • 設備足跡
    • 晶圓RPT、週期
    • 晶圓成本
    • 靈敏度分析
  • 2D 從NAND轉換到3D NAND
    • 晶圓容量
    • 投資/投資減少
  • 3D NAND技術的轉變
    • 晶圓容量
    • 投資/投資減少
    • 晶圓RPT、週期
    • 晶圓成本




Forward Insights


The NAND flash industry is on the cusp of a technology inflection point. 2D NAND is reaching its scaling limits with 3D NAND its anointed successor.

In the 2D NAND era, the underlying process technology (with a few exceptions) is essentially the same amongst all the NAND flash manufacturers.

However, in the 3D NAND era, all the NAND flash manufacturers are developing different 3D NAND concepts with variations in the process implementation. The different processes will impact the investment and manufacturing cost for each of the 3D NAND technologies.

This report provides a detailed analysis of the fab and manufacturing implications of 3D floating gate and charge trap NAND concepts from Samsung, Toshiba, SK Hynix and Intel-Micron versus 16nm 2D NAND. The analysis is based on a bottoms-up process flow analysis for each 3D NAND technology and 16nm 2D NAND.

Some of the questions addressed in this report include:

  • What are the main drivers of the process complexity for 2D NAND and 3D NAND?
  • What is the tool commonality between 3D NAND and 2D NAND?
  • What is the cost impact of moving the CMOS under the array in 3D NAND?
  • How much does it cost to build a Greenfield 3D NAND fab and how does it compare to a 2D NAND fab? What is the equipment footprint required and the breakdown of the investment by process modules?
  • What is the front end manufacturing cost of a 3D NAND wafer compared to a 2D NAND wafer?
  • What is the investment required to convert an existing 2D NAND fab to 3D NAND? What is the impact on the fab cycle time and manufacturing capacity?
  • What is the incremental investment required to transition a 32 layer 3D NAND fab to 64 layers? What is the impact on fab cycle time and manufacturing capacity?

Table of Contents

  • Contents
  • List of Figures
  • List of Tables
  • Executive Summary
  • Introduction
  • The Path to 3D
    • NAND Flash Technology Evolution
    • 3D NAND Flash Memory Cell
      • Implementation of Floating Gate Cells into 3D NAND Flash Arrays
      • Floating Gate Memory Cell Scaling Challenges
      • Charge Trapping Memory Cell Development and Remaining Reliability Issues
      • Optimization of Charge Trapping Memory Cell for the Application in 3D Arrays
  • 2D and 3D NAND Process Flow
    • Technology Overview and Process Challenges
  • 3D concepts
    • Overview
    • CMOS formation
      • Conventional CMOS Adjacent to Memory Array
      • CMOS Placement Below Memory Array
    • 3D Memory Array Formation
      • Toshiba p-BiCS
      • Samsung TCAT
      • 3D Floating Gate
    • BEOL for 3D Concepts
    • Fundamental Limitation in 3D NAND Fabrication
  • 2D and 3D NAND Process Comparison
    • Process Complexity Comparison
  • Cost and Investment Implications of 3D NAND
    • Greenfield Fab
      • Fab Investment
      • Equipment Footprint
      • Wafer RPT and Cycle Time
      • Wafer Costs
      • Sensitivity Analysis
    • Converting from 2D NAND to 3D NAND
      • Wafer Capacity
      • Investment/De-investment
    • 3D NAND Technology Migration
      • Wafer Capacity
      • Investment/De-investment
      • Wafer RPT and Cycle Time
      • Wafer Costs
  • Conclusion
  • References
  • About the Authors
  • About Forward Insights
    • Services
    • Contact
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