高頻 (RF) 功率半導體
RF Power Semiconductors Market Data: Silicon, Gallium Nitride, and Gallium Arsenide High Power RF Devices
|出版日期||內容資訊||英文 18 Tables, 18 Charts
|高頻 (RF) 功率半導體 RF Power Semiconductors Market Data: Silicon, Gallium Nitride, and Gallium Arsenide High Power RF Devices|
|出版日期: 2019年05月01日||內容資訊: 英文 18 Tables, 18 Charts||
本報告提供全球高頻功率半導體 (電力半導體，輸出功率3瓦以上，頻率4GHz以上)的市場結構、趨勢相關分析，目前使用案例，及市場規模趨勢預測，各市場區隔/各技術/各供應商市場佔有率，GaN (氮化鎵) 高頻功率半導體的使用概況 等調查。
A myriad of products and services utilize RF power amplifiers in their transmitter circuitry: wireless infrastructure for cell phones and other mobile devices; radio and television broadcasting; medical equipment such as MRI machines; materials curing that includes carpet fibers and plywood; radar; space and satellite communications; police and fire radios; and military communications and electronics of all kinds. Most of these transmitters use semiconductors in the RF power amplifier output stages. Even modern, extremely high-power broadcast transmitters that traditionally have used large vacuum tubes in their RF sections have finally begun to use solid-state devices.
This study examines RF power semiconductor devices that have power outputs of greater than three watts and operate at frequencies of up to 4 GHz, which represent the bulk of applications in use today. Both silicon based and gallium based devices are covered.