Abstract
DESCRIPTION:
Publication date: May 2011
SJ MOSFET market will double to reach $890M in 2016
Infineon and ST Micro are sharing 90% of the market, leaving Vishay,
Fairchild, Toshiba and all the new comers struggling for the remaining pieces
(still $50M...). However, the market is being attacked by new comers:
Fairchild & Toshiba in 2004, then Vishay in 2010, followed by Renesas, Fuji
Electric, Alpha Omega Semiconductor, Hua-hong NEC and probably others very
soon. This picture is to change as market size will nearly double within the
next 5 years.
Players Market Share 2010
First CoolMOSR was released back in 1998 by Infineon. It broke what had been
the “silicon limit” for key device performance parameters (RdsON
per area), and competitors took time to develop and make their own solution
commercially available, such as ST Micro who released its MDmeshR in 2000.
While waiting for the performance improvements promised for a long time by
compound semiconductor devices, system manufacturers keep pushing for
improvements in Silicon devices at the lowest cost possible. SJ MOS is one of
the solutions proposed today.
SHORTAGE IN 2010 OPENS DOORS FOR SMALLER PLAYERS
The SJ MOS market will experience a CAGR of approximately 13% for the next 5
years. However, in 2009 manufacturers slowed production because of the
economic downturn and then 2010 was a year of shortage. SJ MOS production
process is so proprietary and specific that it is difficult to outsource to
foundries. This reduces the capability to meet the demand. Re-launching
biggest player's production left more room for smaller players; that gives
them an opportunity in 2011 to take market shares.
NEW ENTRANTS, NEW DEVICES, DIFFERING STRATEGIES AND EMERGING APPLICATIONS
Applications are also expanding. New inverter topologies are using SJ MOS in
systems up to 10kW. The expected added value is cost, space and efficiency.
There will be an impact on SJ MOS market, coming from this new structure.
These new topologies will be the driver of SJ MOS power modules and we expect
to see more and more SJ MOS in inverters. They will also take market share
from IGBT in 600V-1200V range. They will be preferred for high frequency
needs. SJ MOS technology is also increasing in voltage breakdown. ST Micro is
releasing 1200V MDmesh® and now targeting 1700V. On the other side, 900V
CoolMOS® from Infineon is looking for a market at the moment. Players have
very different strategies, targeting very different markets.
Some envision that SJ MOS will replace IGBT's in selected 1200V applications;
others prefer to focus on cost to make their solution replace Planar MOSFETs.
Among the SJ MOS players, some also develop solutions for the next generation
of power semiconductors, GaN and SiC. Super Junction will be the Silicon
technology that will make the transition to compound materials. It will make
Silicon last longer than expected.
MULTIPLE EPITAXY VS. DEEP TRENCH: THE TWO COMPETING TECHNOLOGIES
SJ MOS technology is also balancing between multiple epitaxy, the historical
structure developed by Infineon, and deep trench, the newest structure. Cost
will be the main issue to tackle, to make one technology available and used in
more and more solutions. Some expect that deep trench will be the best. It
allows fast processing through deep reactive ion etching, with higher yield
and smaller dies. There are still difficulties and setting up the process is
prohibitive. On its side, multiple epitaxy technology stays expensive, with
its repeated lithography steps, but the process is now well known. Some
manufacturers can reach high yields with older devices (+85%). Yield is
difficult to improve thus players are looking forward to smaller dies.
Integrators will remain technology agnostic. The market is and will be
cost-driven. Because of the development costs involved and the need of return
on investment, we envision these two structures are going to live jointly for
a few years...
WHO SHOULD BUY THIS REPORT?
- Power semiconductor manufacturers:
- Identify today's players, technologies and strategy
- Benchmark SJ MOS technology versus of other available power switches
- Get the exact picture of SJ MOS market to take the good decisions.
- SJ MOS manufacturers:
- Get the market metrics required for your strategy
- Identify your opportunities in emerging applications
- Benchmark your competitor's technology and strategy
- Equipment manufacturers:
- Identify new business opportunities and prospects: deep trench,
implantation...
- Power module makers:
- Evaluate the availability and benefits of integrating SJ MOS, regarding
your own strategy
- Benchmark the different manufacturers and make the best choice in the
future.
- Power converter manufacturers:
- Understand the technology inside SJ MOS, and benchmark your suppliers of
discrete devices
- Understand the market of SJ MOS to anticipate on your supply-chain
evolution.
COMPANIES CITED IN THE REPORT:
Alpha Omega Semiconductor, Danfoss, Deboy, Denso, EnPhase, EPC Corp,
Fairchild, Freescale, Fuji Electric, Hitachi, Hua Hong Nec, Infineon,
International Rectifier, Ixys, Laas lab, Micro GaN, Microsemi, Mitsubishi,
NEC, NXP, ON Semi, Panasonic, Philips, Powdec, Powersem, Renesas, Rohm,
Sanken, Schneider Electric, Shindengen, ST Micro, Toshiba, Toyota, Vincotech,
Vishay...
BENEFITS:
KEY FEATURES OF THE REPORT:
- Market trends (ASP, Units, M$) and figures with detailed breakdown:
- Multiple epitaxies and deep trench technology revealed and explained
- Description and positioning of the technology in terms of applications
- Profile of the players and analysis of their strategy
- Profile of the new entrants and analysis of their status
- Analysis of the trends and evolutions in terms of technology and
applications
BIO
Alexandre AVRON is a full time analyst in power electronics at Yole
Développement. He has performed several market research and technology
analysis in the power semiconductor and compound semiconductor field as well
as in photovoltaic inverter field. He was granted a Master degree in
Electrical engineering, with a major in power electronics and microelectronics
processes, from Applied Sciences National Institute (INSA) of Lyon, France.
ABOUT YOLE DÉVELOPPEMENT
Beginning in 1998 with Yole Développement, we have grown to become a
group of companies providing market research, technology analysis, strategy
consulting, media in addition to finance services. With a solid focus on
emerging applications using silicon and/or micro manufacturing Yole
Développement group has expanded to include more than 40 associates
worldwide covering MEMS and microfluidics, Advanced Packaging, Compound
Semiconductors, Power Electronics, LED, and Photovoltaic. The group supports
companies, investors and R&D organizations worldwide to help them understand
markets and follow technology trends to develop their business.
Table of Contents
INTRODUCTION
- How is this report built?
- Why this report
- How is this report built?
- Topic, definitions and baseline
EXECUTIVE SUMMARY
- Power electronics market
- Super Junction MOSFET positioning
- Analysis of super junction MOSFET positioning
- 2009 global power electronics market size
- 2006-2015 market size, split by device type
- Split by devices, including SJ MOSFET
- SJ MOS involvement of power electronics manufacturers
APPLICATIONS FOR SUPER JUNCTION MOSFETS
- Introduction
- How are applications segmented?
- SJ MOS in EV/HEV
- SJ MOS in PV inverter
- SJ MOS in Uninterruptible Power Supplies
- SJ MOS in LCD TV
- SJ MOS in Lighting applications
- SJ MOS in computer power supplies
- SJ MOS in Desktop computer AC/DC
- SJ MOS in Laptop computer AC/DC
- SJ MOS in Server power supplies
- SJ MOS in other power supplies
TRENDS IN SJ MOS APPLICATIONS
- SJ MOS is moving to higher voltage
- GaN Versus Super junction
- Yole market forecat for GaN in power
- GaN vs. SJ MOS as of 2011
- GaN Product Introduction Roadmap
- Conclusion on SJ MOS market trends
CONCLUSIONS ON SJ MOS APPLICATIONS
- SJ MOS drivers per segment
- Split by application as of 2010
- SJ MOS market forecast to 2016
SUPER JUNCTION MOSFET MARKET
- Power Electronics discrete devices
- Technology split as of 2010
- Players market shares as of 2010
- SJ MOS Supply-chain
- SJ MOSFETs market forecast 2009 - 2016
- Assumptions for forecasts and estimations
- SJ MOSFETs device production forecast 2010 - 2016
- Wafer consumption for SJ MOS - Forecast 2007 - 2016
- SJ MOSFETs wafer market share in 2010
- SJ MOS applications - Power range
- Split by application as of 2010
- Shortage situation
- SJ MOS market - Conclusion
SJ MOSFET TECHNOLOGIES - WHO DOES WHAT
- Super- junction MOSFETs - History
- 2 technologies: Multi- epi & Deep Trench
- Multiple epitaxy technology
- Deep trench technology
- Cost analysis
- Performances history at R&D
- Who does what?
- Conclusion
ADDED VALUE OF SJ MOS
- Conventional power MOSFET
- The Super Junction principle
- Features and benefits
- Si, SJ MOS and SiC - Characteristics comparison
- SJ MOSFET position in voltage and frequency
TECHNOLOGIES AND PLAYERS PROFILES
- Recall on market shares by players
- Infineon - Coolmos® technology
- ST Microelectronics - Mdmesh technology
- Toshiba - DTMOS technology
- Fairchild -SUPERFET & SUPREMOS
- Fairchild - Multi-epi “SuperFET”
- Fairchild - Deep trench “SupreMOS”
- Vishay - SJ MOS devices
NEW PLAYERS: FUJI ELECTRIC, RENESAS, AOS, HH-NEC
- Fuji electric
- Renesas
- Hua Hong NEC
- Hua Hong NEC - Technology roadmap
- Alpha Omega Semiconductor
- SJ MOS module makers
- Conclusion
CONCLUSION ON SUPER JUNCTION MOSFET MARKET
YOUR CONTACTS AT YOLE
APPENDIX
REVERSE ENGINEERING ON SJ MOS
- Structure comparison - Multi-epi
- Structure comparison - Pictures
- Structure comparison - Dimensions
