針對氮化鎵（GaN）設備的電路板：功能比較及市場評價（2009年）

Abstract

GALLIUM NITRIDE has been the subject of intensive research and product development over the past fifteen years. Since 2000, GaN research activities have intensified around the world. The number of companies and research centers with GaN activity has increased to over 700 organizations in 2009 from roughly 350 such organizations identified in 2000.

Blue, green, and white LED technology has continued its large-scale commercial growth, helping the GaN device market to reach nearly $4.6 billion in 2008. White LEDs are responsible for well over 50% of the total GaN related LED market.

Future high-growth GaN devices include high-power LEDs for lighting, electronic devices, and laser diodes. The latter will be used in the next generation of optical storage technology and their development will be spurred by increasing availability of GaN and AlN substrates.

R&D ISSUES AND TECHNOLOGY DEVELOPMENTS are reviewed along with the status of the technology emphasizing major breakthroughs that have occurred. Research activities are highlighted for deposited and bulk crystal growth/substrates for:

• Sapphire
• SiC
• GaN
• AlN
• GaN-on-Si

Highlights of this Report include:

• Basic physical properties of the substrate materials being compared
• Compatibility of substrates with deposited compound semiconductor layers
• Device performance, yield, and reliability comparisons as a function of substrate material.
• Substrate/device market status and projections through 2013
• Major applications for which each substrate is best suited

• MARKET FORECAST of the worldwide substrate and electronic device market for through 2013 for LEDs, laser diodes, and electronic devices.
• MAJOR INDUSTRIAL SUPPLIERS and potential suppliers are profiled.
• UNIVERSITIES/RESEARCH CENTERS with active substrate development programs are identified with key contacts noted.
• GOVERNMENT AGENCIES promoting substrate development are listed.
• A BIBLIOGRAPHY with references to some of the most significant advances in substrate and device technology since 2006 is presented.

Table of Contents

1. EXECUTIVE SUMMARY

• 1.1 Introduction
  • 1.1.1 Report Objectives
• 1.2 Technology Summary
  • 1.2.1 Driving Forces for Change and Acceptance of Alternative Substrates
  • 1.2.2 Crystal Growth Summary
    • 1.2.2.1 Bulk Crystal Growth (GaN)
    • 1.2.2.2 Deposited Bulk Crystal Growth
    • 1.2.2.3 AlN True Bulk Crystal Growth
    • 1.2.2.4 SiC Bulk Crystal Growth
    • 1.2.2.5 Sapphire Bulk Crystal Growth
    • 1.2.2.6 Silicon Bulk Crystal Growth
  • 1.2.3 Summary of Device Performance Results as a Function of Substrate Type
• 1.3 Major Applications/Device Types (GaN-Related)
• 1.4 Companies and Universities/Research Centers Involved In Substrate Supply and Development
• 1.5 Market Forecast Summary
  • 1.5.1 Device Market Forecasts
  • 1.5.2 Substrate Market Forecasts
• 1.6 Summary and Conclusions
• 1.7 The Report

2. SUBSTRATE TECHNOLOGY STATUS UPDATE

• 2.1 Driving Forces for Substrate Choices (Sapphire, SiC, GaN, AlN, and Si)
• 2.2 Comparisons of Device Performance as a Function of Substrate Material
• 2.3 Summary of Substrate Materials with Respect to Appropriate Products and Applications
• 2.4 Crystal Growth
  • 2.4.1 Bulk Sapphire Crystal Growth
  • 2.4.2 SiC Bulk Crystal Growth
  • 2.4.3 Bulk Growth of SiC (Summary)
  • 2.4.4 GaN Crystal Growth
    • 2.4.4.1 GaN Bulk Crystal Growth
    • 2.4.4.2 Deposited GaN Substrates
  • 2.4.5 AlN Crystal Growth
    • 2.4.5.1 Sublimation-Recondensation
    • 2.4.5.2 Ammonothermal Synthesis of AlN Crystals
    • 2.4.5.3 PVT Seeded Growth - NCSU
    • 2.4.5.4 HexaTech
    • 2.4.5.5 Modified Physical Vapor Transport (PVT)
    • 2.4.5.6 Major Driving Forces for the Selection of AlN vs. GaN Substrates
  • 2.4.6 Si Substrates
    • 2.4.6.1 Bulk Si Crystal Growth
• 2.5 Composite Substrates (SopSiC and SiCopSiC)
• 2.6 Nonpolar Substrates
  • 2.6.1 Nonpolar Definitions
  • 2.6.2 Nonpolar Development
  • 2.6.3 Green Semipolar LEDs Grown by MOCVD on a Semipolar GaN Template
  • 2.6.4 Nonpolar Green LDs for Laser TV
  • 2.6.5 Control of Polarity of GaN Films on c-Plane Sapphire
  • 2.6.6 A Comparison of Performance, Morphology, and Defect Density of Nonpolar a-Plane- and m-Plane-Based LEDs
• 2.7 Diamond Substrates
• 2.8 Basic Substrate Materials Properties
  • 2.8.1 Crystal Structure
  • 2.8.2 Bandgap
  • 2.8.3 Electron Saturated Drift Velocity
  • 2.8.4 Breakdown Electric Field
  • 2.8.5 Dielectric Constant
  • 2.8.6 Thermal Conductivity
  • 2.8.7 Coefficient of Thermal Expansion (CTE)
  • 2.8.8 Lattice Mismatch with Deposited GaN Films
• 2.9 Figures of Merit
• 2.10 Performance and Reliability Comparisons as a Function of Substrate Material
  • 2.10.1 Performance Comparisons - Substrates and Other Variables
  • 2.10.2 Historical (Prior to 2008)
  • 2.10.3 Status Update (2008-2009)

3. MAJOR APPLICATIONS OF GaN DEVICES

4. DIRECTORY AND PROFILES OF ORGANIZATIONS ACTIVE IN SUBSTRATE PRODUCTION AND DEVELOPMENT

• 4.1 Companies Active in Substrate Production and Development
  • 4.1.1 Sapphire
  • 4.1.2 SiC
  • 4.1.3 GaN
  • 4.1.4 AlN
  • 4.1.5 GaN-on-Si
  • 4.1.6 Silicon
• 4.2 Research Centers and Universities Active in Substrate Development
  • 4.2.1 SiC
  • 4.2.2 GaN
  • 4.2.3 AlN
  • 4.2.4 GaN-on-Si
• 4.3 Government Agencies Supporting III-Nitride Activity, Including Bulk and Deposited Crystal Growth
  • 4.3.1 North America
    • 4.3.1.1 Canada
    • 4.3.1.2 Mexico
    • 4.3.1.3 U.S.
  • 4.3.2 Asia
    • 4.3.2.1 Japan
    • 4.3.2.2 People' s Republic of China
    • 4.3.2.3 Singapore
    • 4.3.2.4 South Korea
    • 4.3.2.5 Taiwan
  • 4.3.3 Europe
    • 4.3.3.1 Belarus
    • 4.3.3.2 France
    • 4.3.3.3 Germany
    • 4.3.3.4 Italy
    • 4.3.3.5 Lithuania
    • 4.3.3.6 The Netherlands
    • 4.3.3.7 Poland
    • 4.3.3.8 Russia
    • 4.3.3.9 Spain
    • 4.3.3.10 Sweden
    • 4.3.3.11 Switzerland
    • 4.3.3.12 United Kingdom
  • 4.3.4 Australia
• 4.4 Mini-Profiles of Representative Organizations Supplying Substrates or Active in their Development
  • 4.4.1 U.S.
  • 4.4.2 France
  • 4.4.3 Germany
  • 4.4.4 Poland
  • 4.4.5 Russia
  • 4.4.6 Japan

5. MARKET FORECASTS

• 5.1 GaN-Based Device Market Forecasts
  • 5.1.1 Optoelectronic Devices
    • 5.1.1.1 High-Brightness LEDs
    • 5.1.1.2 Laser Diodes
  • 5.1.2 Electronic Devices
• 5.2 Substrate Market Forecasts
  • 5.2.1 Sapphire
  • 5.2.2 SiC Substrates
    • 5.2.2.1 SiC Market Forecast Assumptions
  • 5.2.3 GaN Substrates
    • 5.2.3.1 GaN Substrate Market Forecasts
  • 5.2.4 AlN Substrates
    • 5.2.4.1 AlN Substrate Market Forecasts
  • 5.2.5 Silicon Substrates

BIBLIOGRAPHY