歷史與初期用途
- 結晶成長
- Thin-Film Deposition
- P-type Doping
- Etch
- Contact Formation
- Band 結構
- GaN 藍色 LED
基本材料特性
- 結晶結構
- Bandgap
- Saturated Electron Drift Velocity
- Breakdown Electric Field
- Dielectric Constant
- 熱傳導率
- 熱膨脹係數
- 耐輻射性
競爭材料、Figures of Merit

3. 主要用途

光電
- LED
- 雷射二極體
- UV 檢測器
- UV 光源
電子裝置
- 微波
- 高溫
- 高輸出

4. 研發課題與進展

最新狀況
- 基質
- Deposited Film 組成與材質
- P-type Doping
- Etch
- Contact
- Packaging
- 歷史回顧
Epitaxially Deposited GaN Film
- 目前 GaN Deposition 技術
- LEO/ELOG
- PENDEO
- Cantilever Epi Process
- Plasma-Assisted MBE/AP-MOCVD
Contack
- 背景
- 最近成績
- 相關研究中心
基質與其品質
- Sapphire
- SiC
- GaN
- AIN
GaN Etching
- 背景
- 最近成績
- 化學性質與技術
- 相關企業、大學、研究中心
Doping
- 背景
- 2003年轉型主要進展
Packaging
- 光學熱輸出
- LED 熱傳導與熱設計
- Power LED
- 主要進展
- 新式技術與未來進步
- 電子設備 Packaging

5. 以 GaN 為基礎之設備

光電設備
電子設備

6. 企業、學術機構與政府的腳步

相關產業腳步
研發大學及中心
政府腳步與支援
研發主要企業概要
研發大學概要
研發支援政府機構概要
台灣的研發與生產
氮化鎵在中國

7. 用途分析與市場預測

光電用途
電子用途
2005-2009年市場預測

GALLIUM NITRIDE has been the subject of intensive research and product development for the past twelve years. Since 2000, GaN research activities have intensified around the world. The number of companies and research centers with GaN activity has increased to over 500 organizations in early 2005 from roughly 350 such organizations identified in 2000.

Blue, green, and white LED technology has continued its large-scale commercial growth resulting in revenues exceeding $3 billion in 2004. White LEDs are responsible for over 50% of the total GaN related LED market.

Future high-growth GaN devices include high-power LEDs for lighting, deep UV emitters, and laser diodes. The latter will be used in the next generation of optical storage technology and their development will be spurred by increasing availability of GaN substrates.

1. EXECUTIVE SUMMARY

1.1 Introduction
1.2 Technology Summary
1.3 Major Applications
1.4 Major Players
1.5 Market Forecast Summary
1.5.1 Optoelectronics Market Forecast
1.5.2 Electronic Device Market Forecast
1.6 The Report

2. GaN BACKGROUND and MATERIALS PROPERTIES

2.1 History/Initial Applications: 2.1.1 Crystal Growth; 2.1.2 Thin-Film Deposition; 2.1.3 P-type Doping; 2.1.4 Etch; 2.1.5 Contact Formation; 2.1.6 Band Structure; 2.1.7 GaN Blue LEDs
2.2 Basic Materials Properties: 2.2.1 Crystal Structure; 2.2.2 Bandgap; 2.2.3 Saturated Electron Drift Velocity; 2.2.4 Breakdown Electric Field; 2.2.5 Dielectric Constant; 2.2.6 Thermal Conductivity; 2.2.7 Coefficient of Thermal Expansion; 2.2.8 Radiation Hardness
2.3 Competing Materials/Figures of Merit: 2.3.1 Competing Materials; 2.3.2 Figures of Merit

3. MAJOR APPLICATIONS

3.1 Optoelectronics: 3.1.1 LEDs; 3.1.2 Laser Diodes; 3.1.3 UV Photodetectors; 3.1.4 UV Optical Sources
3.2 Electronic Devices: 3.2.1 Microwave Power; 3.2.2 High Temperature; 3.2.3 High Power

4. R&D ISSUES and ACTIVITY

4.1 Status Update: 4.1.1 Substrates; 4.1.2 Deposited Film Composition/Quality; 4.1.3 P-type Doping; 4.1.4 Etching; 4.1.5 Contacts; 4.1.6 Packaging; 4.1.7 Historical Review
4.2 Substrates/Substrate Quality: 4.2.1 Sapphire; 4.2.2 SiC; 4.2.3 GaN; 4.2.4 AlN
4.3 Epitaxially Deposited GaN Films: 4.3.1 Current GaN Deposition Techniques; 4.3.2 LEO/ELOG; 4.3.3 Pendeoepitaxy; 4.3.4 Cantilever Epi Process; 4.3.5 Plasma-Assisted MBE/AP-MOCVD
4.4 Contacts: 4.4.1 Background; 4.4.2 Recent Results; 4.4.3 Research Centers with GaN Contact Activity
4.5 Etching of GaN: 4.5.1 Background; 4.5.2 Etch Update; 4.5.3 Etch Chemistries and Techniques; 4.5.4 Representative Companies, Universities, and Research Centers with GaN Etch Activity
4.6 Doping: 4.6.1 Background; 4.6.2 Representative Doping Activity Since 2003
4.7 Packaging: 4.7.1 Light Output; 4.7.2 LED Heat Transport and Thermal Design; 4.7.3 Power LED Packaging; 4.7.4 Representative Package Activity; 4.7.5 Emerging and Future Packaging Technologies; 4.7.6 Electronic Device Packaging
Addendum to Chapter 4: Substrate Suppliers

5. GaN-BASED DEVICE TYPES

5.1 Optoelectronic Devices 5.1.1 Blue, Green, and White LEDs: 5.1.2 Blue/Violet Laser Diodes; 5.1.3 UV Photodectors and Emitters
5.2 Electronic Devices: 5.2.1 Record Performances Summary 5.2.2 Leading-Edge Performance Since 2003 and Excerpted Papers; 5.2.3 Power Devices Summary; 5.2.4 Microwave Power HEMTs; 5.2.5 Power GaN HEMTs on SiC; 5.2.6 Low-Noise HEMTs; 5.2.7 MESFETs; 5.2.8 Piezoelectric/Polarization Effects; 5.2.9 Heterojunction/Schottky Diode Rectifiers and Thyristors; 5.2.10 HBTs and BJTs; 5.2.11 Summary of Companies/Research Centers and Universities Active in GaN-Based Electronic Device Development

6. INDUSTRIAL, ACADEMIC AND GOVERNMENT ACTIVITY

6.1 GaN - Related Industrial Activity: 6.1.1 North America; 6.1.2 Asia; 6.1.3 Europe; 6.1.4 Middle East and Africa
6.2 Universities/Research Centers Active in GaN Development: 6.2.1 North and South America; 6.2.2 Asia-Pacific; 6.2.3 Europe; 6.2.4 Middle East and Africa
6.3 GaN-Related Government Activities and Funding: 6.3.1 North America; 6.3.2 Asia; 6.3.3 Europe; 6.3.4 Australia
6.4 Mini-Profiles of Representative Companies Active in GaN Development: 6.4.1 U.S. Companies; 6.4.2 Asian Companies; 6.4.3 European Companies
6.5 Mini-Proiles of Universities Active in GaN Development
6.6 Mini-Profiles of Government Agencies Supporting GaN Development: 6.6.1 U.S.; 6.6.2 Taiwan
6.7 The Rise of GaN in Taiwan: GaN Development and Production Status
6.8 The Rise of GaN in China

7. APPLICATIONS ANALYSIS AND MARKET FORECASTS

7.1 Optoelectronics Applications: 7.1.1 Background; 7.1.2 Blue, Green, and White LEDs; 7.1.3 Laser Diodes; 7.1.4 UV Devices
7.2 Electronics Applications: 7.2.1 Overview; 7.2.2 Communications Systems; 7.2.3 Industrial; 7.2.4 Military/Aerospace; 7.2.5 Automotive; 7.2.6 Aircraft
7.3 Market Forecast, 2005-2009: 7.3.1 Optoelectronics; 7.3.2 Electronics BIBLIOGRAPHY