Abstract
Much has been published about GaN transistors but very few are available
commercially. MuAnalysis has taken apart the Cree CGH40010 GaN HEMT.
MuAnalysis has used a large variety of analytical techniques including,
electron microscopy with photochemical delineation, EDX and FTIR spectroscopy,
and emission microscopy to probe the insides of this transistors and reveal
what the datasheet does not mention.
Table of Contents
- 1. Product Identification
- 2. External Appearance and Principal Dimensions
- 3. Package
- Encapsulation
- Leadframe structure and material
- Die attach
- Wirebonding
- 4. Semiconductor Die
- 4.1 Plan view analysis
- 4.2 Cross section analysis
- 4.2.1 Source Probe Pads
- 4.2.2 Gate Contact
- 4.2.3 Active Area
- 4.2.4 Source Through Vias
- 4.2.5 Coupled gate and drain contact pads
- 5. Emission Microscopy Analysis
- 6. Summary
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