封面
市場調查報告書
商品編碼
1197728

下一代晶體管市場 - COVID-19 的增長、趨勢、影響和預測 (2023-2028)

Next-Generation Transistors Market - Growth, Trends, and Forecasts (2023 - 2028)

出版日期: | 出版商: Mordor Intelligence | 英文 120 Pages | 商品交期: 2-3個工作天內

價格

本網頁內容可能與最新版本有所差異。詳細情況請與我們聯繫。

簡介目錄

在預測期內,下一代晶體管市場預計將以 4% 的複合年增長率增長。

主要是由於消費電子市場的增長。 市場上最新的智能手機配備了 10 億個晶體管,可實現更快的設備操作。 根據 IBEF 的數據,印度智能手機市場近期收入超過 380 億美元,同比增長 27%。 智能手機領導者小米將在 2022 年第二季度出貨 3950 萬部設備。

主要亮點

  • 半導體材料是電子行業的重要創新之一。 這歸因於其高電子遷移率、寬溫度限制和低能耗。 據 SEMI 預測,2022 年全球原始設備製造商的半導體製造設備銷售額將達到 1175 億美元,較之前 2021 年的 1025 億美元的行業紀錄增長 14.7%,預計將增加 1208 億美元。
  • 消費類設備中越來越多的高級功能也推動了對快速、實時處理的需求。 此外,隨著物聯網的出現,人工智能、數據分析、實時數據傳輸和處理等功能正在成為任何先進設備的基本要求,為接受調查的市場供應商創造了巨大的機會。 此外,台積電在公司的“2022 北美技術研討會”上展示了其即將推出的製造工藝技術,其亮點是其下一代 2nm 節點(內部簡稱為“N2”)的詳細信息。 該公司計劃在 2022 年底開始生產 3nm 節點。
  • 此外,2022 年 4 月,科學家們創造了第一個磁電晶體管,可以幫助提高電子設備的能效。 這種設計有望降低集成它的微電子器件的能耗,並將存儲給定數據所需的晶體管數量減少多達 75%,從而使設備更小。。 微電子還可以有一個“竊取陷阱記憶”,即使在關機或突然斷電後,它也能準確記住用戶離開的地方。
  • 此外,許多市場參與者正在轉向在其製造過程中採用納米片。 例如,2022 年 6 月,台灣芯片製造商台積電透露了其備受期待的 2nm 製造工藝節點的詳細信息,預計將於 2025 年到來。 該節點將採用納米片晶體管架構來增強公司的 3nm 技術。 據該公司稱,新一代矽半導體芯片有望提高速度。 隨著工藝節點的縮小和科技行業繼續堅持摩爾定律,它將變得更加節能。
  • 此外,後 COVID-19 正在影響半導體和其他電子元件行業的生產和製造能力。 例如,據《中國日報》的消息來源稱,2022 年 6 月,深圳的 Omicron 停工迫使全球最大的電子市場之一華強北再次部分關閉。 華強北是半導體、手機等電子設備的供應基地,位於深圳市福田區。 財經媒體彩聯稱,隨著深圳加強措施遏制具有高度傳染性的 COVID-19 的傳播,華強北的一些供應商已暫時關閉業務。 這些商戶包括華強電子世界1號店和2號店。

下一代晶體管市場趨勢

高電子遷移率晶體管 (HEMT) 的採用增加

  • 高電子遷移率晶體管由於具有高增益,因此非常適合用作放大器。 另外,速度切換快。 此外,由於電流波動小,所以幾乎不會產生噪音。
  • 許多公司正在開發工作頻率高於傳統晶體管的 HEMT 設備。 例如,2022 年 11 月,納科科技宣布推出一款新的低 RDS(on) 650V E-mode GaN HEMT 器件。 在標準 8x8 DFN 封裝中,INN650D080BS 功率晶體管的導通電阻為 80mΩ(典型值為 60mΩ),可實現圖騰柱 LLC 架構和快速電池充電器等高功率應用。
  • 例如,2022 年 9 月,Ampleon 推出了新的 CLL3H0914L-700 GaN-SiC 高電子遷移率晶體管。 這種堅固耐用的 GaN 晶體管針對需要長脈衝寬度和高佔空比的雷達運行進行了優化。 該晶體管設計用於在 50V 電壓下工作時從單個晶體管實現超過 700W 的峰值輸出功率,實現超過 70% 的行業領先效率和 ~2mm.秒的脈衝寬度),熱開髮用於長脈衝應用程序,如 20% 的佔空比。
  • 此外,對消費電子產品不斷增長的需求和高電子遷移率晶體管的應用正在推動市場增長。 根據 IBEF 的數據,印度的消費電子和消費電子行業最近價值 98.4 億美元,預計到 2025 年將增長一倍以上,達到 14.8 億印度盧比(211.8 億美元)。 此類家電的發展將進一步推動所研究市場的增長。
  • 此外,STMicroelectronics 最近還發布了一個新的 GaN 組件系列,稱為 STi2GaN(ST 智能集成 GaN)。 該器件採用 ST 的無鍵合線封裝技術以提供穩健性和可靠性。 這個新產品系列旨在利用 GaN 的高功率密度和效率來提供一系列 100V 和 650V 高電子遷移率晶體管 (HEMT) 器件。

亞太地區見證了顯著的市場增長

  • 亞太地區是電子產品的中心,每年生產數十億台電子設備,尤其是在該地區消費的電子設備。 然而,亞太地區在向全球出口電子元器件方面發揮著重要作用。 該地區消費電子市場的快速增長已成為亞太地區在全球下一代晶體管市場的關鍵增長因素。
  • 此外,中國和日本等新興經濟體擁有龐大的電子製造基地,有潛力成為晶體管市場的重要參與者。 此外,下一代手機可能會完全專注於提高手機性能,並提供更好的規格。 集成更多的晶體管有望帶來體積更小、速度更快的手機,從而更好地滿足消費者的需求。 據IBEF預測,2022年Q1“印度製造”智能手機出貨量將超過4800萬部,同比增長7%,其中印度智能手機出貨量超過1.9億部。
  • 根據 IBEF,“國家電子政策 2019”的目標是到 2025 年生產 10 億部移動終端(相當於 1900 億美元),其中 6 億部(相當於 1000 億美元)預計將用於出口。
  • 此外,中國已將半導體行業的發展作為“中國製造 2025”中改變這一狀況的關鍵因素。 這個想法是通過國產芯片來增加電子領域的份額,同時滿足國內對 14 億人每天使用的智能手機和個人電腦等許多設備的 80% 的需求。 預計這些因素將推動市場擴張。
  • 此外,該地區還擁有多家活躍於半導體市場的公司,包括三星、英特爾和台積電。 這些公司承認,在 2023 年之後,使用 3 納米或 2 納米技術世代的邏輯器件生產將逐漸從旗艦 FinFET 晶體管架構轉向納米片架構。
  • 此外,2022 年 4 月,韓國第三大企業集團 SK 集團宣布,矽和碳化物(收購國內唯一一家使用 SiC 的功率半導體製造商 Yes Powertechnix)組件。 SK 宣布將以 1200 億韓元(9500 萬美元)的額外價格購買控股權並收購 Yes Powertechnix 95.8% 的股份。 此外,最近投資268億韓元收購了Yes Powertechnix 33.6%的股份。 這些發展可能會刺激該地區的需求。

下一代晶體管市場競爭者分析

下一代晶體管市場競爭激烈。 半導體行業本身正在進入專業化階段。 從歷史上看,該行業一直專注於生產可以執行一些通用功能的計算機芯片。 這些籌碼在某種程度上是相互關聯的。 然而,如今,半導體應用更加微妙和差異化,導致在各個垂直領域擁有專業知識的利基玩家激增。 此外,該行業的許多公司都將其職能外包出去,但像英特爾這樣設計、製造和生產半導體產品的大公司除外。 因此,該行業與全球供應鏈緊密相連,形成了激烈的競爭和深度合作。

  • 2022 年 6 月 GaN Systems 是 GaN(氮化鎵)功率半導體領域的跨國公司,在業界最廣泛的 GaN 功率晶體管產品組合中推出了一款新晶體管。 GS-065-018-2-L 擴展了我們的高性能、低成本晶體管產品組合,具有低導通電阻、穩健性、改進的熱性能和 850V VDS(瞬態)額定值。

其他好處

  • Excel 格式的市場預測 (ME) 表
  • 三個月的分析師支持

內容

第1章介紹

  • 調查結果
  • 調查假設
  • 本次調查的範圍

第2章研究方法論

第 3 章執行摘要

第4章市場動態

  • 市場概覽
  • 市場動態簡介
  • 市場驅動因素
    • 高密度設備的技術進步
    • 消費電子產品的擴散
  • 市場製約因素
    • 維持摩爾定律的成本更高,回報更低
  • 價值鏈分析
  • 行業吸引力 - 波特五力分析
    • 新進入者的威脅
    • 買家的議價能力
    • 供應商的議價能力
    • 替代品的威脅
    • 競爭公司之間的敵對關係

第 5 章市場細分

  • 按類型
    • 高電子遷移率晶體管 (HEMT)
    • 雙極結型晶體管 (BJT)
    • 場效應晶體管 (FET)
    • 多發射極晶體管 (MET)
    • 雙柵金屬氧化物半導體場效應晶體管
  • 按最終用戶行業
    • 航空航天與國防
    • 工業
    • 通訊領域
    • 消費類電子產品
  • 區域信息
    • 北美
    • 歐洲
    • 亞太地區
    • 拉丁美洲
    • 中東和非洲

第6章競爭格局

  • 公司簡介
    • NXP Semiconductors N.V.
    • Infineon Technologies AG
    • STMicroelectronics N.V.
    • Fairchild Semiconductor International, Inc.(ON Semiconductor Corp.)
    • Texas Instruments Incorporated
    • Intel Corporation
    • GLOBALFOUNDRIES Inc.
    • Taiwan Semiconductor Manufacturing Company
    • Samsung Electronics Co., Ltd
    • Microchip Technology Inc.

第7章 投資分析

第8章 市場將來性

簡介目錄
Product Code: 55975

Next-Generation Transistors Market is expected to grow at a CAGR of 4% over the forecast period. Primarily due to the increase in the consumer electronics market. A billion transistors are present in the newest smartphones on the market, ensuring speedier gadget operation. According to IBEF, India's smartphone market revenue crossed USD 38 billion recently, with a 27% YoY growth. In addition, Xiaomi, a top smartphone company, shipped 39.5 million devices in Q2 2022.

Key Highlights

  • Semiconductor materials represent one of the significant innovations in the electronics industry. This can be accredited to their high electron mobility, wide temperature limits, and low energy consumption. According to SEMI, worldwide sales of total semiconductor manufacturing equipment by original equipment manufacturers reached a record USD 117.5 billion in 2022, rising 14.7% from the previous industry high of USD 102.5 billion in 2021 and forecasted to increase by USD 120.8 billion in 2023.
  • The growing scope of advanced features in consumer devices is also fueling the need for fast and real-time processing. Furthermore, with the advent of IoT, features like AI, data analytics, real-time data transfer, and processing are becoming a basic necessity for any advanced devices, creating a massive opportunity for the studied market vendors. Furthermore, TSMC showcased its upcoming manufacturing process technology at the company's 2022 North America Technology Symposium, with the highlight being details of its next-generation 2nm node, known internally as N2. The company will go into production with the 3nm node at the end of 2022.
  • Moreover, in April 2022, Scientists created what they believe is the first magneto-electric transistor that could help to make electronics more power-efficient. Along with curbing the energy consumption of any microelectronics that incorporate it, the team's design could reduce the number of transistors needed to store specific data by as much as 75 percent leading to smaller devices. It could also lend those microelectronics "steel-trap memory" that remembers exactly where its users leave off, even after being shut down or abruptly losing power.
  • Further, many players in the market are shifting towards employing nanosheets in their manufacturing process. For instance, in June 2022, Taiwanese chipmaker TSMC revealed details of its much-anticipated 2nm production process node - set to arrive in 2025 - which will use a nanosheet transistor architecture and enhancements to its 3nm technology. According to the company. The newer generations of silicon semiconductor chips are expected to increase speed. They will be more energy efficient as process nodes shrink and the tech industry continues to fight to hang onto Moore's Law.
  • Moreover, Post COVID-19 is affecting the production and manufacturing capacity of the semiconductor and other electronics components industry. For instance, in June 2022, according to sources in the Chinese Press, Shenzhen's Omicron lockout forced Huaqiangbei, one of the world's biggest electronics markets, to partially close once again. Huaqiangbei, a center for the supply of semiconductors, cellphones, and other electronics, is situated in the Futian District of Shenzhen. According to financial media Cailianshe, certain vendors in Huaqiangbeihave temporarily ceased operations as Shenzhen intensified measures to control the spread of the highly contagious Omicron COVID-19. These vendors include the first and second stores of HuaqiangElectronics World.

Next-Generation Transistors Market Trends

Increasing adoption of High Electron Mobility Transistor (HEMT)

  • High electron mobility transistors produce high gain, making these transistors very useful as amplifiers. They can quickly switch speeds. And shallow noise values are produced as the current variations in these transistors are relatively low.
  • Many companies are developing HEMT devices that operate at higher frequencies than conventional transistors. For instance, in November 2022, Nanoscience Technology announced a new low RDS(on) 650V E-mode GaN HEMT device. In a standard 8x8 DFN package, INN650D080BS power transistors have an on-resistance of 80m (60m typical), enabling higher power applications such as totem pole LLC architectures or fast battery chargers.
  • For instance, in September 2022, Ampleon Launched a new CLL3H0914L-700 GaN-SiC High-electron-mobility transistor. This rugged GaN transistor is optimized for radar executions where long pulse width and high-duty cycles are needed. The transistor was engineered to accomplish over 700W of peak output power from a single transistor while operating at a voltage of 50V with industry-leading efficiency of over 70%, as well as developed thermally for long pulse applications, such as pulse widths (~2 milliseconds) and 20% duty cycles.
  • Moreover, the growing demand for consumer electronics and the applicability of high electron mobility transistors drive market growth. According to IBEF, the Indian appliances and consumer electronics industry stood at USD 9.84 billion recently and is expected to more than double to reach INR 1.48 lakh crore (USD 21.18 billion) by 2025. Such developments in consumer electronics will further drive the studied market growth.
  • Furthermore, STMicroelectronics recently announced a new family of GaN parts designated STi2GaN, which stands for ST Intelligent and Integrated GaN. The pieces use ST's bond-wire-free packaging technology to provide robustness and reliability. The new product family aims to leverage the high-power density and efficiency of GaN to offer a range of 100- and 650-V high-electron-mobility transistor (HEMT) devices.

Asia Pacific to Experience Significant Market Growth

  • The Asia Pacific region is an electronics hub with billions of electronic devices manufactured annually for consumption, specifically in this region. However, the Asia-Pacific region plays a significant role in exporting electronic components across the globe. The rapid growth in the consumer electronics market in this region is the key growth factor for the Asia-Pacific region in the Global Next Generation Transistor Market.
  • Furthermore, the developing economies of the region, such as China and Japan, have massive electronics manufacturing bases and hold the potential to become significant players in the transistors market. Further, the next-generation phones would be entirely focused on improving the performance of phones with better specifications. Integrating more transistors is expected to direct to smaller phones with faster processing, which caters perfectly to consumer needs. According to IBEF, Shipments of "Made-in-India" smartphones rose 7% YoY in Q1 2022 to reach over 48 million units, while over 190 million smartphones made in India were shipped.
  • According to IBEF, The National Policy on Electronics 2019 targets the production of one billion mobile handsets valued at USD 190 billion by 2025, out of which 600 million handsets valued at USD 100 billion are likely to be exported.
  • Furthermore, China has made the growth of its semiconductor industry a key component of its Made in China 2025 agenda to alter this situation. China intends to increase its market share in electronics while having local chip production meet 80% of domestic demand for the numerous smartphones, PCs, and other devices that its 1.4 billion citizens use daily. All of these elements are anticipated to support market expansion.
  • Moreover, the region has several players in the semiconductor market, like Samsung, Intel, and TSMC. These firms have acknowledged that starting in 2023, the production of logic devices using the 3nm or 2nm technology generations will gradually switch from the workhorse FinFETtransistor architectures to nanosheet-like architectures.
  • Furthermore, in April 2022, The third-largest conglomerate in South Korea, SK Group, will acquire Yes Powertechnix, the only domestic manufacturer of power semiconductors based on a component of silicon and carbide (SiC), which are emerging as a key component of electric vehicles, as part of a group-wide effort to strengthen its battery-related business. SK Inc. said it would purchase management rights and a further KRW 120 billion (USD 95 million) to acquire 95.8% of Yes Powertechnix. Further, the business recently invested KRW 26.8 billion to acquire a 33.6% ownership in Yes Powertechnix. Such development may fuel the region's demand.

Next-Generation Transistors Market Competitor Analysis

The next-generation transistors market is highly competitive. The semiconductor industry itself is going through a phase of specialization. Historically, the industry has concentrated on producing computer chips that could perform several generalized functions. These chips were related to each other to some extent. But today, the applications of semiconductors are more nuanced and differentiated, leading to the proliferation of niche players with specialized expertise across various verticals. Moreover, in this industry, many players outsource their functionalities except a few major players like Intel, who design, fabricate, and manufacture semiconductor products. This makes the sector deeply connected to global supply chains and has made this industry fiercely competitive and deeply collaborative.

  • June 2022 - GaN Systems, the multinational player in GaN (gallium nitride) power semiconductors, introduced a new transistor in the industry's broadest portfolio of GaN power transistors. The GS-065-018-2-L expands the firm's high-performance, low-cost transistor portfolio and features lower on-resistance, raised robustness and thermal performance, and an 850V VDS (transient) rating.

Additional Benefits:

  • The market estimate (ME) sheet in Excel format
  • 3 months of analyst support

TABLE OF CONTENTS

1 INTRODUCTION

  • 1.1 Study Deliverables
  • 1.2 Study Assumptions
  • 1.3 Scope of the Study

2 RESEARCH METHODOLOGY

3 EXECUTIVE SUMMARY

4 MARKET DYNAMICS

  • 4.1 Market Overview
  • 4.2 Introduction to Market Dynamics
  • 4.3 Market Drivers
    • 4.3.1 Technological Advancements Leading To Demand for Increasing Device Densities
    • 4.3.2 Proliferation of Consumer Electronics
  • 4.4 Market Restraints
    • 4.4.1 Cost of Maintaining Moore's Law is Getting Higher with Low Returns
  • 4.5 Industry Value Chain Analysis
  • 4.6 Industry Attractiveness - Porter's Five Forces Analysis
    • 4.6.1 Threat of New Entrants
    • 4.6.2 Bargaining Power of Buyers
    • 4.6.3 Bargaining Power of Suppliers
    • 4.6.4 Threat of Substitute Products
    • 4.6.5 Intensity of Competitive Rivalry

5 MARKET SEGMENTATION

  • 5.1 By Type
    • 5.1.1 High Electron Mobility Transistor (HEMT)
    • 5.1.2 Bipolar Junction Transistor (BJT)
    • 5.1.3 Field Effect Transistors (FET)
    • 5.1.4 Multiple Emitter Transistor (MET)
    • 5.1.5 Dual Gate Metal Oxide Semiconductor Field Effective Transistor
  • 5.2 By End User Industry
    • 5.2.1 Aerospace & Defense
    • 5.2.2 Industrial
    • 5.2.3 Telecommunications
    • 5.2.4 Consumer Electronics
  • 5.3 By Geography
    • 5.3.1 North America
    • 5.3.2 Europe
    • 5.3.3 Asia Pacific
    • 5.3.4 Latin America
    • 5.3.5 Middle East & Africa

6 COMPETITIVE LANDSCAPE

  • 6.1 Company Profiles
    • 6.1.1 NXP Semiconductors N.V.
    • 6.1.2 Infineon Technologies AG
    • 6.1.3 STMicroelectronics N.V.
    • 6.1.4 Fairchild Semiconductor International, Inc. (ON Semiconductor Corp.)
    • 6.1.5 Texas Instruments Incorporated
    • 6.1.6 Intel Corporation
    • 6.1.7 GLOBALFOUNDRIES Inc.
    • 6.1.8 Taiwan Semiconductor Manufacturing Company
    • 6.1.9 Samsung Electronics Co., Ltd
    • 6.1.10 Microchip Technology Inc.

7 INVESTMENT ANALYSIS

8 FUTURE OF THE MARKET