矽 vs. WBG(寬能隙Wide Band-gap):闡明電動車市場上的GaN·SiC的活用預測的
Silicon vs. WBG: Demystifying Prospects of GaN and SiC in the Electrified Vehicle Market
|矽 vs. WBG(寬能隙Wide Band-gap):闡明電動車市場上的GaN·SiC的活用預測的 Silicon vs. WBG: Demystifying Prospects of GaN and SiC in the Electrified Vehicle Market|
|出版日期: 2014年07月13日||內容資訊: 英文||
As silicon struggles to keep up with performance requirements, wide bandgap (WBG) materials like silicon carbide (SiC) and gallium nitride (GaN) are best positioned to address power electronics performance needs in electrified vehicles. GaN and SiC will allow for efficient high-temperature operation while also having a cascading impact on the thermal management requirements, wiring, and packaging within a vehicle, reducing the total overall costs of the vehicle. We examine what battery economics are needed to justify adoption of either GaN or SiC, while also highlighting the changing dynamics when battery costs fall. This report further predicts when these materials will be adopted in the auto industry factoring in technology maturity, supplier maturity, and qualification timelines in the auto industry.
As silicon struggles, WBG materials are best positioned to address needs of increased rate of vehicle electrification; PHEVs and EVs will benefit the most from GaN and SiC.
SiC diodes and transistors are expensive and best suited to large battery vehicles today, and closest to commercial adoption; GaN products are unavailable and suppliers lag behind.