Transparent electronics is now very much a subject in its own right, and carbon nanotubes (CNTs) and graphene have a huge role to play in this. CNTs (whether transparent or opaque), graphene and their compounds exhibit extraordinary electrical properties for organic materials, and have a huge potential in electrical and electronic applications such as photovoltaics, sensors, semiconductor devices, displays, conductors, smart textiles, energy conversion devices (e.g., fuel cells, harvesters and batteries) and more.

This updated report brings all of this together, covering the latest work from over 110 organisations around the world and details the latest progress in the technologies. New developments, challenges and opportunities regarding material production and applications are given.

Carbon Nanotubes for electronics applications

While the fabrication of CNT transistors is still in the research phases, they are starting to be used for their conductive properties, in addition to the fact that they can be transparent, flexible and even stretchable. In particular, they are being applied as conductive layers for the rapidly growing touch screen market. They are also likely to become a viable replacement for Indium Tin Oxide (ITO) transparent conductors, which are expensive due to the rare Indium being used, vacuum based processing, and additionally have very limited flexing capability - such as easily cracking under 2% strain.

Ink or solution CNTs will enable high performing devices which can ultimately be made in low cost manufacturing processes such as printing, over large areas. Depending on their chemical structure, CNTs can be used as an alternative to organic or inorganic semiconductors as well as conductors, which in electronics, other than electromagnetic shielding, will be one of the first large applications for CNTs. Companies that IDTechEx surveyed forecast growth rates as high as 300% over the next five years.

While the cost of CNTs was once prohibitive, it has been dropping in recent years as chemical companies build up their manufacturing capacity. However, challenges remain and cheap mass production as well as high-volume commercial applications are not achieved yet. The challenges include consistent growth, material purity, separation, device fabrication and the need for other device materials such as suitable dielectrics. Nevertheless, scientists are getting closer - several separation methods have been discovered over the last few years and a new CNT production process was patented in 2010 by CNano Technology. This, and other new developments regarding the production of pure CNTs and the separation of conducting and semiconducting CNTs are given in this updated report.

Graphene for electronics applications

Transistors using graphene are considered to be potential successors for the silicon components currently in use. The material proves to be an ideal candidate for many high-speed computing applications in the multibillion-dollar semiconductor device industry - potentially enabling terahertz computing, at processor speeds 100 to 1000 times faster than silicon. Graphene and its compounds are increasingly used to make transistors that show extremely good performance - progress that comes with new cheaper production processes for the raw material. All this work is covered in this updated report from IDTechEx.

One crucial issue concerning the use of graphene for electronic applications is getting it to perform as a true semiconductor. However, recent activities of several academic institutions show promise that the material' s restraining issue of not having a band gap will soon be solved.

Activity from over 110 organisations profiled

Printable CNT inks and graphene-based inks are beginning to hit the market. The last year has shown further development regarding production, purification and solution processing on both sides. IDTechEx has researched 113 companies and academic institutions working on CNTs, graphene and their compounds, all profiled in the report. Graphene and multi wall CNTs (MWCNTs) are already in fairly high production - tens of tonnes per year. However, most of these uses are for non-electronic/electrical products, or simple applications such as electromagnetic shielding. While manufacturers in North America focus more on single wall CNTs (SWCNTs); Asia and Europe, with Japan in first place and China second, are leading the production of multi wall CNTS (MWCNTs) with Showa Denko, Mitsui and Hodogaya Chemical being among the largest suppliers.

Currently, the largest manufacturer in the world is a Chinese company named Cnano, which is reported to produce around 500 tonnes per year. Europe' s Bayer Corporation is currently the second largest global producer at 200 tonnes per year but there are other similar sized producers in Germany and France. However, the largest number of manufacturers, around 27 and albeit at small volumes, is in the United States.

Key benefits of purchasing this report

This concise and unique report from IDTechEx gives an in-depth review to the applications, technologies, emerging solutions and players.

It addresses specific topics such as:

Activities of over 110 global organisations which are active in the development of materials or devices using CNTs or graphene
Application to conductors, displays, transistors, super capacitors, batteries, photovoltaics and much more
Types of CNTs and graphene and their properties and impact on electronics
Current development as well as challenges in production and use and opportunities
Forecasts for the entire printed electronics market which CNTs and printed electronics could impact

Who should buy this report

For those involved in making or using CNTs and graphene, or those developing displays, photovoltaics, transistors, energy storage devices and conductors and want to learn about how they can benefit from this technology, this is a must-read report.

Report Statistics

Last update: July 2011
Total Number of Pages: 301
Total Number of Tables: 20
Total Number of Figures: 86
Total Number of Companies: Over 110
Forecasts to: 2021

EXECUTIVE SUMMARY

1. INTRODUCTION

1.1. Carbon Nanotubes
1.2. Graphene

2. PROPERTIES

2.1. Properties of CNTs
2.2. Metallic/semiconducting CNT separation
2.3. CNTs as conductors
2.4. Comparison to other conductors
2.5. Comparison to other semiconductors
2.6. Properties of graphene
2.7. Creating a band gap in graphene

3. MANUFACTURE

3.1. Manufacture of CNTs
- 3.1.2. Arc Method
- 3.1.3. Laser Ablation Method
- 3.1.4. Chemical Vapor Deposition (CVD)
3.2. Manufacture of Graphene
- 3.2.1. Scotch tape method
- 3.2.2. Epitaxial Graphene - grown on silicon-carbide crystals
- 3.2.3. Expanded Graphene
- 3.2.4. Templated growth

4. APPLICATIONS

4.1. Printing Carbon Nanotubes and Graphene
- 4.1.1. Latest progress
4.2. Conductors
- 4.2.1. Deposition technologies and main applications
- 4.2.2. Latest progress with CNT conductors
- 4.2.3. Challenges
4.3. Transistors
- 4.3.2. CNT Transistors
- 4.3.3. Graphene Transistors
- 4.3.4. Challenges
4.4. OLEDs and flexible displays
- 4.4.2. Latest progress
4.5. Lighting
4.6. Energy storage devices
- 4.6.1. Batteries
- 4.6.2. Supercapacitors
4.7. Photovoltaics
- 4.7.1. Organic Photovoltaics
- 4.7.2. Hybrid organic-inorganic photovoltaics
- 4.7.3. Infrared solar cells
- 4.7.4. Photodiode
4.8. NRAM data storage device
4.9. Sensors and smart textiles
4.10. Thin film speakers

5. COMPANY PROFILES

5.1. Aneeve Nanotechnologies LLC, USA
5.2. Angstron Materials LLC., USA
5.3. Applied Nanotech, USA
5.4. Arry International Group, Hong Kong
5.5. BASF, Germany
5.6. Bayer MaterialScience, Germany
5.7. Brewer Science, USA
5.8. Canatu Ltd., Finland
5.9. Carben Semicon Ltd, Russia
5.10. Carbon Solutions, Inc., USA
5.11. CarboLex, Inc., USA
5.12. Cap-XX Australia
5.13. Case Western Reserve University, USA
5.14. Catalyx Nanotech Inc. (CNI), USA
5.15. CheapTubes, USA
5.16. Chengdu Organic Chemicals Co. Ltd. (Timesnano), China
5.17. CNano Technology Ltd, USA
5.18. Cornell University, USA
5.19. CSIRO, Australia
5.20. C3Nano, Inc., USA
5.21. Dainippon Screen Mfg. Co., Ltd., Japan
5.22. DuPont Microcircuit Materials (MCM), USA
5.23. Eden Energy Ltd., Australia
5.24. Eikos, USA
5.25. Frontier Carbon Corporation (FCC), Japan
5.26. Fujitsu Laboratories, Japan
5.27. Future Carbon GmbH, Germany
5.28. Georgia Tech Research Institute (GTRI), USA
5.29. Graphene Energy Inc., USA
5.30. Graphene Industries Ltd., UK
5.31. Hanwha Nanotech Corporation, Korea
5.32. HeJi, Inc., China
5.33. Helix Material Solutions Inc., USA
5.34. Hodogaya Chemical Co., Ltd., Japan
5.35. Honda Research Institute USA Inc. (HRI-US), USA
5.36. Honjo Chemical Corporation, Japan
5.37. HRL Laboratories, USA
5.38. Hyperion Catalysis International, Inc.
5.39. IBM, USA
5.40. Intelligent Materials PVT. Ltd. (Nanoshel), India
5.41. Massachusetts Institute of Technology (MIT), USA
5.42. Max Planck Institute for Solid State Research, Germany
5.43. MER Corporation, USA
5.44. Mitsui Co., Ltd, Japan
5.45. Mknano, Canada
5.46. Nano-C, USA
5.47. NanoCarbLab (NCL), Russia
5.48. Nano Carbon Technologies Co., Ltd. (NCT)
5.49. Nanocomb Technologies, Inc. (NCTI), USA
5.50. Nanocs, USA
5.51. Nanocyl s.a., Belgium
5.52. NanoIntegris, USA
5.53. NanoLab, Inc., USA
5.54. NanoMas Technologies, USA
5.55. Nano-Proprietary, Inc., USA
5.56. Nanoshel, Korea
5.57. Nanostructured & Amorphous Materials, Inc., USA
5.58. Nanothinx S.A. , Greece
5.59. Nantero, USA
5.60. National Institute of Advanced Industrial Science and Technology (AIST), Japan
5.61. National Institute of Standards & Technology (NIST), USA
5.62. NEC Corporation, Japan
5.63. New Jersey Institute of Technology (NJIT), USA
5.64. Noritake Co., Japan
5.65. North Carolina State University, USA
5.66. North Dakota State University (NDSU), USA
5.67. Northeastern University, Boston, USA
5.68. Optomec, USA
5.69. PARU, Korea
5.70. Pennsylvania State University, USA
5.71. PETEC (Printable Electronics Technology Centre), UK
5.72. Purdue University, USA
5.73. Pyrograf Products, Inc., USA
5.74. Rensselaer Polytechnic Institute (RPI), USA
5.75. Rice University, USA
5.76. Rutgers - The State University of New Jersey, USA
5.77. Samsung Electronics, Korea
5.78. Sang Bo Corporation (SBK), Korea
5.79. SES Research, USA
5.80. Shenzhen Nanotechnologies Co. Ltd. (NTP)
5.81. Showa Denko Carbon, Inc. (SDK), USA
5.82. ST Microelectronics, Switzerland
5.83. SouthWest NanoTechnologies (SWeNT), USA
5.84. Sunchon National University, Korea
5.85. Sungkyunkwan University Advanced Institute of Nano Technology (SAINT), Korea
5.86. Sun Nanotech Co, Ltd., China
5.87. Surrey NanoSystems, UK
5.88. Thomas Swan & Co. Ltd., UK
5.89. Toray Industries, Japan
5.90. Tsinghua University, China
5.91. Unidym, Inc., USA
5.92. University of California Los Angeles (UCLA), USA
5.93. University of California, San Diego, USA
5.94. University of Central Florida, USA
5.95. University of Cincinnati (UC), USA
5.96. University of Manchester, UK
5.97. University of Michigan, USA
5.98. University of Pittsburgh, USA
5.99. University of Southern California (USC), USA
5.100. University of Stanford, USA
5.101. University of Stuttgart, Germany
5.102. University of Surrey, UK
5.103. University of Texas at Austin, USA
5.104. University of Texas at Dallas, USA
5.105. University of Tokyo, Japan
5.106. University of Wisconsin-Madison, USA
5.107. Vorbeck Materials Corp, USA
5.108. Wisepower Co., Ltd., Korea
5.109. XG Sciences, USA
5.110. XinNano Materials, Inc., Taiwan
5.111. Y-Carbon
5.112. Zoz GmbH, Germany
5.113. Zyvex, Inc., USA

6. NETWORK PROFILES

6.1. CONTACT
6.2. Inno.CNT
6.3. National Technology Research Association (NTRA)
6.4. TRAMS - Tera-scale reliable Adaptive Memory Systems

7. FORECASTS AND COSTS

7.1. Market Opportunity and roadmap for Carbon Nanotubes and Graphene
7.2. Costs of SWCNTs
7.3. New Focus for Printed Electronics - the importance of flexible electronics
7.4. Focus on invisible electronics
7.5. Shakeout in organics
7.6. Market pull

APPENDIX 1: GLOSSARY

APPENDIX 2: IDTECHEX PUBLICATIONS AND CONSULTANCY

TABLES

2.1. Typical Sheet Resistivity figures for conductors
2.2. Comparison of the main options for semiconductors
4.1. Main applications of conductive inks and some major suppliers today
4.2. Comparison of the three types of capacitor when storing one kilojoule of energy.
5.1. Baytubes product specifications
5.2. Results of pulse-heat CVD
5.3. Characteristics of the CNT-FED compared with LEDs
7.1. Market forecast by component type for 2011 to 2021 in US $ billions, for printed and potentially printed electronics including organic, inorganic and composites
7.2. Costs of SWeNTs
7.3. SES Research
7.4. Nanothinx S.A. (price per gram in Euros)
7.5. Nanocs
7.6. Arry International Group
7.7. Carbon Solutions
7.8. Carbolex
7.9. Cheaptubes
7.10. Helix Material Solutions
7.11. MER Corporation

FIGURES

1.1. Structure of single-wall carbon nanotubes
1.2. The chiral vector is represented by a pair of indices (n, m). T denotes the tube axis, and a1 and a2 are the unit vectors of graphene in real space
2.1. Atomic Force Microscope image of carbon nanotubes before and after processing.
2.2. Potential applications are flexible solar cells, displays and touch screens.
2.3. Targeted applications for carbon nanotubes by Eikos
2.4. Conductance in ohms per square for the different printable conductive materials, at typical thicknesses used, compared with bulk metal
3.1. Traditional CNT film processes are complex
4.1. New printable elastic conductors made of carbon nanotubes are used to connect OLEDs in a stretchable display that can be spread over a curved surface
4.2. Stretchable mesh of transistors connected by elastic conductors
4.3. Hybrid graphene-carbon nanotube G-CNT conductors
4.4. Traditional geometry for a field effect transistor
4.5. CNT Transistors through Specialized Printing Processes from NEC Corporation
4.6. IBM has patterned graphene transistors with a metal top-gate architecture (top) fabricate on 2-inch wafers (bottom) created by the thermal decomposition of silicon carbide.
4.7. Carbon nanotube Field Effect transistors
4.8. Epitaxial graphene FETs on a two-inch wafer scale
4.9. An enlarged photo of a several-millimeter square chip with graphene transistors. The graphene transistors can be seen in the enlarged photo of the tips of the two electrodes
4.10. An LSI mounted on a flexible substrate by using CNT bumps
4.11. Two types of OLED construction
4.12. CNT networks for flexible displays
4.13. ANI: proof of concept CNT lamp
4.14. Internal structure of Power Paper Battery.
4.15. Proposed battery design from UCLA
4.16. Energy density vs power density for storage devices
4.17. The carbon nanotube supercapacitor versus batteries and traditional capacitors
4.18. The process. The resulting film is photographed atop a color photo to show its transparency
4.19. Georgia Tech Research Institute (GTRI) scientists have demonstrated an ability to precisely grow "towers" composed of carbon nanotubes atop silicon wafers. The work could be the basis for more efficient solar power for soldiers in
4.20. A three-terminal memory cell based on suspended carbon nanotubes: (a) nonconducting state ' 0' , (b) conducting state ' 1' , and (c) Nantero' s NRAM™.
4.21. The main options for organic sensors
4.22. Four scanning electron microscope images of the spinning of carbon nanotube fibres
4.23. Photographs of CNT-cotton yarn. (a) Comparison of the original and surface modified yarn. (b) 1 meter long piece as made. (c) Demonstration of LED emission with the current passing through the yarn.
4.24. Thin, almost transparent sheets of multi-wall (MWNT) nanotubes are connected to an electrical source, which rapidly heats the nanotubes causing a pressure wave in the surrounding air to produce sound.
4.25. The CNT thin film was put on a flag to make a flexible flag loudspeaker
4.26. Carbon nanotube thin film loudspeakers
5.1. Hormone Sensing using CNT Printed Integrated Circuits
5.2. ANI: proof of concept CNT lamp
5.3. Fully printed CNT FET-based switch
5.4. Fully printed TFT device schematic
5.5. Transparent conductive material roadmap: Gen 1 at the moment; Gen 2 is the goal for end of 2010, Gen 3 is the long term target
5.6. Directly produced prepatterned films
5.7. Cap-XX supercapacitor technology with carbon coating.
5.8. Layout of CNT-FE BLU fabricated through pulse
5.9. Schematic illustration of experimental setup
5.10. Illustrations of micro-patterned cathodes
5.11. SEM images of CNTs on Samples C, D and E
5.12. Field emission properties of CNT-emitters patterned on a glass substrate by pulse-heat CVD. Luminescence images from the backsides of the cathode at various applied voltages are indicated in inset.
5.13. SEM images of CNTs on the micro-patterned electrodes with interline spacing (a) 20, (b) 50, (c) 100 and (d)200 !m (top view).
5.14. CNT Ink Production Process
5.15. Target application areas of Eikos
5.16. IBM has patterned graphene transistors with a metal top-gate architecture (top) fabricate on 2-inch wafers (bottom) created by the thermal decomposition of silicon carbide.
5.17. The graphene microchip mostly based on relatively standard chip processing technology
5.18. Cncept version of the photoelectrochemical cell
5.19. This filament containing about 30 million carbon nanotubes absorbs energy from the sun
5.20. Density gradient ultracentrifugation
5.21. Color pixel; 3mm, display area; 48mm x480mm
5.22. Color pixel; 1.8mm, display area; 57.6mm x 460.8mm.
5.23. A prototype display of digital signage.
5.24. Application images of public displays.
5.25. Schematic structure of CNT-FED using line rib spacer.
5.26. Phosphor-dot pattern and conductive black-matrix pattern.
5.27. An application on the information desk. The color pixel pitch were 3mm(left) and 1.8mm (right).
5.28. A photograph of a displayed color character pattern in two lines. The color pixel pitch was 1.8mm.
5.29. SEM images of CNT deposited metal electrode.(a) A photograph of the CNT deposited metal frame. (b) SEM image; boundary of barrier area. (c) SEM image; surface of the CNT layer. (d) SEM image; a surface morphology of CNT.
5.30. One of prototype displays on the vending machine. The display was under field-testing in out-door. The CNT-FED and display module were under testing continuously during ca.15months in Osaka-city up to date, and they were still con
5.31. A photograph of driving system. A solar cell and the charging controller, yellow small battery and CNT-FED module.
5.32. A photograph of a displayed color character which was driven by solar cell and small battery. The color pixel pitch was 1.8mm.
5.33. High density SWCNT structures on wafer-scale flexible substrate.
5.34. SEM micrographs of assembled SWNT structures on a soft polymer surface. (a) Patterned SWNT arrays on parylene-C substrate; (b) high magnification view of a typical central area; (c) SWNT micro-arrays that are 4 μm wide with 5 μm s
5.35. A new method for using water to tune the band gap of the nanomaterial graphene
5.36. A mesh of carbon nanotubes supports one-atom-thick sheets of graphene that were produced with a new fluid-processing technique.
5.37. A three-terminal single-transistor amplifier made of graphene
5.38. CNT films from Rutgers University
5.39. Printed CNT transistor
5.40. A 16 bit HF RFID inlay
5.41. The one bit commercial display tag
5.42. Graphene OPV
5.43. The resulting film is photographed atop a color photo to show its transparency
5.44. Fabrication steps, leading to regular arrays of single-wall nanotubes (bottom).
5.45. The colourless disk with a lattice of more than 20,000 nanotube transistors in front of the USC sign.
5.46. Thin, almost transparent sheets of multi-wall (MWNT) nanotubes are connected to an electrical source
7.1. Supercapacitors
7.2. Market forecast by component type for 2011-2021 in US $ billions, for printed and potentially printed electronics including organic, inorganic and composites
7.3. Chengdu Organic Chemicals Co. Ltd. (Timesnano)
7.4. HeJi Inc
7.5. The percentage of printed and partly printed electronics that is flexible 2011-2021
7.6. Evolution of printed electronics structures

Press Release

石墨薄膜超越碳精棒奈米管

2011年10月11日

Global Information, Inc.已開始銷售IDTechEx Ltd.所發行的報告書「Carbon Nanotubes and Graphene for Electronics Applications 2011-2021 (電子應用之碳奈米管及石墨烯：2011-2021年)」

碳精棒奈米管(CNT)早在10年前就已經商品化，今日大家則期待石墨薄膜使用在電腦和顯示器、太陽能發電及軟性電子學之各種用途上。

依據ID TECH的本報告書，預測CNT及石墨薄膜電晶體在2015年以後將大量生產。推定CNT及石墨薄膜在印刷‧電子學部門有最大的市場機會，而編入這些素材的設備市場規模於2021年時將達到440億美元以上。

較短期間內，大量的石墨薄膜素材被商品化，對新的素材進化和應用開發有所貢獻。與CNT比較，石墨薄膜因為非常輕、價格亦便宜，在好幾個用途上，對碳精棒和銦錫氧化物(ITO)來說，有替換的可能性。

由於應用在軟性及透明螢幕，或許石墨薄膜將來會成為商業的人氣商品。軟性及透明螢幕與萊斯大學等開發的軟性透明電子元件組合，能因應任何電腦和太陽電池之劃時代開發的可能性。ID TECH預測光是OLDE顯示器和太陽能發電，2011年的市場規模將達到250億美元以上，其中亦包含使用石墨薄膜。

石墨薄膜與其組成物，隨著新的加工製程而使材料的生產成本下降，晶體管的利用增加，有助於提高性能。石墨薄膜晶體管有可能成為現在使用的矽零件之接續者。由於石墨薄膜比矽更快速讓電子通過，或許可使轉換頻率運算（tetrahertz computing）成為可能。

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電子應用之碳奈米管及石墨烯：2011-2021年

Carbon Nanotubes and Graphene for Electronics Applications 2011-2021

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