Abstract
The ideal semiconductor memory for future silicon integrated circuits unifies
the qualities of the different memory technologies of today. It should have
the high speed of static random access memory (SRAM), the non-volatility of
flash, and the density of dynamic random access memory (DRAM). In addition, it
should be low in cost and scalable to nanometer dimensions. Flash memories are
currently used as non-volatile memory in stand-alone and embedded chips with
great commercial success. However, flash does not qualify as an ideal memory,
owing to its relatively long programming time (>10 µs) and limited
cycle endurance. Furthermore, the high programming voltages (>10 V)
complicate scaling down to nanometer cell sizes.
Today' s dominant solid-state memory technologies - SRAM, DRAM, and flash -
have been around for a long time, with Flash the youngest, at 23 years. Their
longevity can be explained in part by mutually beneficial differentiation.
Each technology does a single thing very well, but many systems need all three
memory types to deliver overall good performance at reasonable cost. However,
the gain from differentiation comes at the cost of increased system and
fabrication complexity, particularly in so-called embedded applications, where
an entire electronic system is implemented on a single chip, with SRAM, DRAM
and flash often used side by side.
All three technologies have advantages and disadvantages. SRAM has excellent
read and write speeds, integrates readily into the process technology of
embedded applications, and requires little power for data retention. However,
its large cell size (a typical memory bit requires six transistors) makes it
impractical for embedded applications that require a lot of memory. Embedded
SRAM is used for cache memory in microprocessors, where high speed is more
important than large amounts of memory.
DRAM uses a single transistor and a storage capacitor per cell, and thus it
provides a denser architecture than SRAM, at the expense of increased embedded
process complexity. Because the stored charge tends to leak out of the
capacitor, DRAM requires constant power to refresh its bit state every few
milliseconds. Because of its high power consumption, large amounts of DRAM are
impractical for portable electronics with limited battery life.
In contrast to static and dynamic RAM, flash memory offers nonvolatile data
storage; that is, its information is not lost when the power is turned off.
Non-volatility is highly desirable in portable electronics, because
nonvolatile data retention does not consume any battery power. Flash also has
high density and moderately fast read access time, but its write mode is too
slow and its write endurance far too limited for many applications. In
addition, embedded flash needs its own high-voltage drivers, complicating the
design and manufacturing process.
For some time, researchers have tried to devise non-volatile alternatives to
flash. The goal is a "universal memory" that combines the best attributes of
SRAM, DRAM, and flash. Such a memory would eliminate the need for multiple
memories in many applications, would improve system performance and
reliability by avoiding data transfer between multiple memories, and would
reduce overall system cost
STUDY GOAL AND OBJECTIVES
The main reason for growing commitments to emerging non-volatile random access
memory (NVRAM) is that scaling has now become a serious issue for the memory
industry. Leakage is a major hurdle at 65nm and beyond. Three-dimensional
structures offer one solution, but there is a limit on how far one can go in
this technology. Similarly, SRAM makers have largely abandoned large 6T cells
in portable devices in favor of 1T pseudo-SRAM (PSRAM). But again, this is
only a holding action until something better comes along. Flash has a serious
architectural scaling problem that seems likely to become critical well below
90nm. Such problems are making both semiconductor firms and OEMs take emerging
memories much more seriously. Not only are many of these new technologies
inherently more scalable, but also they seem well suited to the next
generation of mobile computing and communications that will demand high
capacity memories capable of storing and rapidly accessing video and large
databases without overburdening battery power sources. In light of such
issues, emerging memory solutions seem to be a key technology.
Ferroelectric RAM (FERAM or F-RAM), magnetic RAM (MRAM), and other
next-generation technologies are all attempts to develop the "perfect" memory
- one that is non-volatile and whose bits can be fully altered, with
ultra-fast read and write rates and an infinite number of rewrite cycles. None
of them succeeds in all areas, but all of them make key advancements in at
least some of these important memory characteristics.
This study has identified and focused on seven emerging non-volatile memory
technologies such as FERAM, phase change random access memory (PCM, PC-RAM,
PRAM, OUM), magneto-resistive RAM (MRAM, STT RAM, Race Track Memory),
resistance switching RAM (RRAM, ReRAM, CB-RAM, PMC-RAM, Nanobridge RAM CMOx,
memistors), zero capacitor (ZRAM), quantum dot RAM and polymer printed memory.
This study focuses on emerging non-volatile random access memory products,
providing market data about the size and growth of the application segments
and new developments, including a detailed patent analysis, company profiles
and industry trends. Another goal of this report is to provide a detailed and
comprehensive multi-client study of the market in North America, Europe,
Japan, China, India, Korea and the rest of the world (ROW) for potential
future emerging non-volatile random access memory products and business
opportunities.
The objectives include thorough coverage of the underlying economic issues
driving the current solid-state memory business, as well as assessments of
new, advanced emerging non-volatile random access memory products that
companies are developing. Another important objective is to provide realistic
market data and forecasts for emerging memory products. This study provides
the most thorough and up-to-date assessment that can be found anywhere on the
subject. It also provides extensive quantification of the many important
facets of market developments in emerging non-volatile random access memory
products in the world. This, in turn, contributes to the determination of
what kinds of strategic responses companies might adopt in order to compete in
this dynamic market.
REASONS FOR DOING THE STUDY
Memory design has seen a number of trends over the years. Process technology
has steadily reduced its minimum feature size. A wide variety of techniques
has been developed to improve packing-density. A myriad of
technology/circuit/system optimizations have been created to improve
performance and reduce power dissipation. In addition, emerging technologies
such as three-dimensional (3D) chip stacking and new physical memory
mechanisms are pushing the memory.
Recent market trends have indicated that commercialized or near-commercialized
circuits are optimized across speed, density, power efficiency and
manufacturability. Flash memory is not suited to all applications, having its
own problems with random access time, bit alterability, and write cycling.
With the increasing need to lower power consumption with zero-power standby
systems, observers are predicting that the time has come for alternative
technologies to capture at least some share in specific markets such as
automotive smart airbags, high-end mobile phones, and RFID tags. An embedded
non-volatile memory with superior performance to flash could see widespread
adoption in system-on-chip (SoC) applications such as smart cards and
microcontrollers.
These new emerging non-volatile random access memory products address the
urgent need in some specific and small-form devices. Therefore, iRAP felt a
need to do a detailed technology update and market analysis in this industry.
CONTRIBUTIONS OF THE STUDY
This study is intended to benefit existing and future manufacturers of
solid-state memories who seek to expand revenues and market opportunities by
moving into new technologies such as emerging non-volatile random access
memory products which are positioned to become a preferred solution for many
applications, such as automotive (e.g., smart airbags), industrial automation,
transportation, harsh operating environments and extreme temperature range,
instrumentation, medical equipment, industrial microcontrollers, radio
frequency identification (RFID), electronic metering and radiation-hardened
applications in consumer, military and aerospace markets.
The study also provides the most complete account currently available in a
multi-client format of emerging non-volatile random access memory products
growth in North America, Europe, Japan, China, and the rest of the world.
This report provides the most thorough and up-to-date assessment that can be
found anywhere on the subject. The study also provides an extensive
quantification of the many important facets of market developments in emerging
markets for new generation non-volatile random access memory products,
especially in countries such as China
SCOPE AND FORMAT
The market data contained in this report quantify opportunities for emerging
non-volatile random access memory products. In addition to product types, the
report also covers many issues concerning the merits and future prospects of
the emerging non-volatile random access memory products business, including
corporate strategies, information technologies and the means for providing
these highly advanced products and service offerings. It also covers in detail
the economic and technological issues regarded by many as critical to the
industry' s current state of change. The report provides a review of the
emerging non-volatile random access memory products industry and its
structure, as well as the many companies involved in providing these products.
The competitive positions of the main market players and the strategic options
they face are also discussed, along with such competitive factors as
marketing, distribution and operations.
TO WHOM THE STUDY CATERS
The study will benefit existing manufacturers of solid-state memory who seek
to expand revenues and market opportunities by growing into the new technology
of emerging non-volatile random access memory products, which are now
positioned to become a preferred solution for many types of RFID tags, smart
cards, high-end mobile phones, smart automotive airbags, etc.
Audiences for this study include marketing executives, business unit managers
and other decision makers in solid-state memory companies themselves, as well
as in companies peripheral to this business.
REPORT SUMMARY
Solid-state memories read and write data with great speed, enabling swift
processing. High-performance versions, such as static and dynamic random
access memory (SRAM and DRAM, respectively), use the electronic state of
transistors and capacitors to store data bits. These chips lose their data,
however, when the computer powers down - or crashes. Currently, solid-state
memories constitute a market of over $50 billion, while the non-volatile
segment is much smaller.
A few computers use non-volatile chips, which retain data when the power is
off, as a solid-state drive in place of a hard disc drive (HDD). The now
ubiquitous smart cell phones and other handheld devices also use non-volatile
memory, but there is a trade-off between cost and performance. The cheapest
non-volatile memory is flash memory, which, among other uses, is the basis of
the little flash drives that people have hanging from their key rings. Flash
memory, however, is slow and unreliable in comparison with other memory chips.
Each time the high-voltage pulse (the "flash" of the name) writes a memory
cell, the cell is damaged; it becomes unusable after only perhaps 10,000
writing operations. Nevertheless, because of its low cost, flash memory has
become a dominant memory technology, particularly for applications in which
the data will not be changed very often.
Industry estimates showed the DRAM market to be as much as $40 billion in
2010. However, the computing world is crying out for a memory chip with high
data density that is also cheap, fast, reliable and non-volatile. With such a
memory, computing devices would become much simpler and smaller, more
reliable, faster and less energy consuming. Research groups around the world
are investigating several approaches to meet this demand, including systems
based on emerging non-volatile random access memory products.
Besides computers, today' s portable electronics have become computationally
intensive devices as the user interface has migrated to a fully multimedia
experience. To provide the performance required for these applications, the
portable electronics designer uses multiple types of memories: a medium-speed
random access memory for continuously changing data, a high-speed memory for
caching instructions to the CPU, and a slower, non-volatile memory for
long-term information storage when the power is removed. Combining all of
these memory types into a single memory has been a long-standing goal of the
semiconductor industry.
It is highly likely that different alternatives are needed for different
application segments of the markets, and a good match has to be found between
solid-state memory product requirements and technology capabilities.
Seven emerging non-volatile memory technologies such as ferromagnetic RAM
(FeRAM or F-RAM), phase change random access memory (PCM, PC-RAM, PRAM, OUM),
magneto-resistive RAM (MRAM, STT RAM, race track memory), resistance switching
RAM (RRAM, ReRAM, CB-RAM, PMC-RAM, nano-bridge RAM CMOx, memistors), zero
capacitor (ZRAM), quantum dot RAM and polymer printed memory are poised as
possible candidate to become the successor of flash memory. This is thanks to
the improved performance in direct write, bit granularity, better endurance,
read access time and write throughput.
Major findings of this report are:
- The 2010 global market for emerging non-volatile random access memory
products was projected to have reached $115 million. This market will increase
to $1,590 million by 2015 showing an average annual growth rate of 69% per
year from 2010 to 2015.
- Of the six major regions surveyed for the period, North America captured
about 42% of the market in 2010, followed by Europe at 36%, and the rest of
the world (ROW) with 22%, dominated by Japan, Korea and China.
- The market for emerging non-volatile random access memory used as an
embedded system on chip SOC cards in 2010 will be highest with more 50% of the
market. This will be followed by distant market share for RFID tags used in
goods which are transported by high-speed detection conveyors, smart airbags
used in automobiles, radiation-hardened memory in aerospace and nuclear
installations, printed memory platforms (such as smart cards, games, sensors,
display, storage-class memory network) and high end smart mobile phones.
- Commercial uses of these new breeds of NV-RAM have been very slow to
appear because of the rapid reduction of per-bit costs of conventional flash
memory technologies already in the market. However, these new technologies are
sure to capture some specific markets for lower power or zero stand-by system
implementation as "green" technology grows.
- Among the seven emerging non-volatile random access memory technologies
covered in this report, in 2010 the potential market for zero capacitor (ZRAM)
is highest. The polymer printed memory market in 2010 will be next highest,
followed by ferromagnetic RAM as a distant third.
- In 2015, phase change memory (PCM, PC-RAM, PRAM, OUM) will have the
highest market share. FeRAM will be next highest, followed by zero capacitor
RAM (ZRAM).
- MRAM promises a high capacity, next-generation memory that can replace
SRAM/flash combos and battery-backed up RAM as well as supplying improved
non-volatile memory solutions for high-end mobile products. MRAM is already in
the sampling stage.
Table of Contents
INTRODUCTION
- STUDY GOAL AND OBJECTIVES
- REASONS FOR DOING THE STUDY
- Contributions of the study
- SCOPE AND FORMAT
- METHODOLOGy
- information sources
- TO WHOM THE STUDY CATERS
- Author' s Credentials
executive summary
- summary table Global market for emerging non-volatile random access
memory products by region through 2015
- SUMMARY FIGURE Global market FOR emerging non-volatile random access
memory products by region, 2010 and 2015
Industry overview
- LEADING MANUFACTURERS
- LEADING MANUFACTURERS (continued)
- FIGURE 1 emerging non-volatile random access meory technology scenArio in
2010
Technology Overview
- Current non-volatile memories
- Emerging NVM
- TYPES OF TECHNOLOGIES
- TABLE 1 comparison of emerging non-volatile random access memories
- table 2 definitions and explanation of terminologies applicable to
emerging non-volatile memories
- Table 2 (continued)
- Table 2 (continued)
- Table 2 (continued)
- Table 2 (continued)
- Table 2 (continued)
- EVOLUTION OF EMERGING NON-VOLATILE RANDOM ACCESS MEMORY TECHNOLOGIES
- Background of Semiconductor Memory
- Memory Usage and Applications
- Memory Market Segments
- Non-volatile Semiconductor Memory (NVSM)/Storage-Class Memory (SCM)
versus Emerging Non-Volatile Memories
- Emerging Non-Volatile Memory Technologies
- Emerging Non-Volatile Memory Technologies (continued)
- Advantages Of Emerging NVMs Over Conventional NVMs
- FIGURE 2 floating-gate polysilicon (flash) architecture
- Description Of Emerging Non-Volatile Random Access Memories
- Ferromagnetic Random Access Memory (FERAM)
- figure 3 FERROELECTRIC CRYSTALS SHOWING MOBILE ATOM MOVING IN DIRECTION
OF APPLIED FIELD SETTING A DIGITAL STATE-0
- Phase Change Random Access Memory (PCRAM)
- figure 4 A VIEW OF PHASE CHANGE MEMORY
- figure 5 OPERATION OF PCRAM
- figure 6 SET AND RESET OPERATION IN PCM
- Characteristics
- Benefits
- Magneto-resistive Random Access Memory (MRAM)
- Density
- Power Consumption
- Speed
- Overall
- figure 7 OPERATION of Magneto-resistive Random Access Memory
- Racetrack Memory: A Variant of MRAM
- figure 8 OPErATION of racetrack random access memory
- Comparison to Other Memory Devices
- Development Difficulties
- Resistive Switching Random Access Memory (RRAM)
- figure 9 CONSTUCTION OF RESISTIVE RANDOM ACCESS MEMORY
- Resistive Switching Random Access Memory (RRAM)
- A Variant of RRAM: Programmable Metallization Cell (PMC)
- CBRAM versus RRAM
- Comparisons
- Current Status
- CMOx: A Variant of RRAM
- Conductive Metal Oxides
- Nano-RAM: A Variant of RRAM
- figure 10 architecture of nano random access memory
- Advantages of NRAM
- Comparison with Other Proposed Systems
- Memristors: A Variant of RRAM
- Zero Capacitor Random Access Memory
- Quantum Dot Random Access Memory
- Polymer Printed Memory
- Figure 11 A view of ferroelectric polymer memory
- Polymer Printed Memory (continued)
- Polymer Printed Memory (continued)
APPLICATIONS OF EMERGING NON-VOLATILE MEMORY PRODUCTS
- Storage-Class Memory
- Compute-Centric Workloads
- Data-Centric Workloads
- table 3 STORAGE-CLASS MEMORY V/S DISK MEMORY REQUIREMENT FORECAST IN 2020
- SMART AIRBAGS
- Radiation-hardened memory applications
- RADIO-FREQUENCY IDENTIFICATION (RFID)
- Smart mobile phones
- Printed memory platforms
- Embedded memory
- Embedded memory (continued)
- figure 12 EMERGING MEMORY MANUFACTURING TECHNOLOGY AND CONVENTIONAL CMOS
TECHNOLOGY
- Organic Switching Materials
Industry STRUCTURE AND MARKETS
- table 4 non-volatile Emerging memories MANUFACTURERS, MATERIAL SUPPLIERS,
end Users and SYSTEM INTEGRATORS
- PartnershipS and consolidationS
- table 5 acquisitions, mergers and partnerships in emerging non-volatile
memories
- TABLE 6 CommercialLY available non-volatile emerging memory chips in 2010
global MARKET and regional shares
Market According to Applications
- table 7 Global market for emerging nvram products by application through
2015
- Figure 13 Global market for emerging NVRAM products by application
through 2015
- table 8 GLOBAL MARKET for EMERGING NVRAM PRODUCTS BY TECHNOLOGIES
ADOPTED THROUGH 2015
- figure 14 GLOBAL MARKET for EMERGING NVRAM PRODUCTS BY TECHNOLOGIES
ADOPTED IN 2010
- table 9 GLOBAL MARKET FOR EMERGING NVRAM PRODUCTS BY region THROUGH 2015
- figure 15 GLOBAL MARKET FOR EMERGING NVRAM PRODUCTS BY REGION THROUGH 2015
Patents and Patent Analysis
- LIST OF PATENTS
- PHASE CHANGE RANDOM ACCESS MEMORY DEVICES AND METHODS OF OPERATING THE
SAME
- METHODS FOR FABRICATING PHASE CHANGEABLE MEMORY DEVICES
- PHASE CHANGE DEVICE HAVING TWO OR MORE SUBSTANTIAL AMORPHOUS REGIONS IN
HIGH RESISTANCE STATE
- NON-VOLATILE MEMORY INCLUDING SUB-CELL ARRAY AND METHOD OF WRITING DATA
THERETO
- MEMORY CELL DEVICE AND PROGRAMMING METHODS
- PHASE CHANGE RANDOM ACCESS MEMORY DEVICE AND RELATED METHODS OF OPERATION
- NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
- MULTI-LEVEL CELL RESISTANCE RANDOM ACCESS MEMORY WITH METAL OXIDES
- MEMORY CELL WITH MEMORY MATERIAL INSULATION AND MANUFACTURING METHOD
- MULTI-LEVEL MEMORY CELL HAVING PHASE CHANGE ELEMENT AND ASYMMETRICAL
THERMAL BOUNDARY
- MULTILAYER STORAGE CLASS MEMORY USING EXTERNALLY HEATED PHASE CHANGE
MATERIAL
- MAGNETIC RAM
- PHASE CHANGE MEMORY CELL AND MANUFACTURING METHOD
- VACUUM-JACKETED ELECTRODE FOR PHASE CHANGE MEMORY ELEMENT
- METHOD FOR MAKING A KEYHOLE OPENING DURING THE MANUFACTURE OF A MEMORY
CELL
- PHASE CHANGE RANDOM ACCESS MEMORY DEVICE
- Method for reading non-volatile ferroelectric capacitor memory cell
- RESISTANCE MEMORY ELEMENT AND NONVOLATILE SEMICONDUCTOR MEMORY
- RESISTANCE MEMORY ELEMENT AND NONVOLATILE SEMICONDUCTOR MEMORY
- METHOD TO IMPROVE FERROELECTRONIC MEMORY PERFORMANCE AND RELIABILITY
- MULTI-PORT PHASE CHANGE RANDOM ACCESS MEMORY CELL AND MULTI-PORT PHASE
CHANGE RANDOM ACCESS MEMORY DEVICE INCLUDING THE SAME
- MEMORY CELL HAVING A SIDE ELECTRODE CONTACT
- MAGNETIC MEMORIES UTILIZING A MAGNETIC ELEMENT HAVING AN ENGINEERED FREE
LAYER
- PROGRAMMABLE LOGIC DEVICE STRUCTURE USING THIRD DIMENSIONAL MEMORY
- 2T/2C FERROELECTRIC RANDOM ACCESS MEMORY WITH COMPLEMENTARY BIT-LINE
LOADS
- NON-VOLATILE FERROELECTRIC MEMORY
- FIELD PROGRAMMABLE GATE ARRAYS USING RESISTIVITY SENSITIVE MEMORIES
- BUFFERING SYSTEMS FOR ACCESSING MULTIPLE LAYERS OF MEMORY IN INTEGRATED
CIRCUITS
- PHASE CHANGE MEMORY CELL HAVING INTERFACE STRUCTURES WITH ESSENTIALLY
EQUAL THERMAL IMPEDANCES AND MANUFACTURING METHODS
- THIN-FILM FUSE PHASE CHANGE CELL WITH THERMAL ISOLATION PAD AND
MANUFACTURING METHOD
- METHOD OF WRITING INTO SEMICONDUCTOR MEMORY DEVICE
- PHASE CHANGE MEMORY CELL IN VIA ARRAY WITH SELF-ALIGNED, SELF-CONVERGED
BOTTOM ELECTRODE AND METHOD FOR MANUFACTURING
- THERMALLY INSULATED PHASE CHANGE MEMORY MANUFACTURING METHOD
- Phase change random access memory (PRAM) device
- PHASE CHANGE MEMORY DYNAMIC RESISTANCE TEST AND MANUFACTURING METHODS
- METHOD FOR MAKING A SELF-CONVERGED VOID AND BOTTOM ELECTRODE FOR MEMORY
CELL
- I-SHAPED PHASE CHANGE MEMORY CELL
- MULTI-RESISTIVE STATE MEMORY DEVICE WITH CONDUCTIVE OXIDE ELECTRODES
- PLANAR THIRD DIMENSIONAL MEMORY WITH MULTI-PORT ACCESS
- PHASE CHANGE RANDOM ACCESS MEMORY DEVICE
- MAGNETORESISTIVE RANDOM ACCESS MEMORY AND ITS WRITE CONTROL METHOD
- METHODS AND SYSTEMS FOR ACCESSING MEMORY
- SPACE AND PROCESS EFFICIENT MRAM AND METHOD
- OPTIMIZED PHASE CHANGE WRITE METHOD
- PHASE-CHANGE RANDOM ACCESS MEMORY AND PROGRAMMING METHOD
- MEMORY DEVICE, IN PARTICULAR PHASE CHANGE RANDOM ACCESS MEMORY DEVICE
WITH TRANSISTOR, AND METHOD FOR FABRICATING A MEMORY DEVICE
- MEMORY POWER MANAGEMENT
- MULTI-STEP SELECTIVE ETCHING FOR CROSS-POINT MEMORY
- RESISTIVE RANDOM ACCESS MEMORY DEVICE
- MEMORY CELL DEVICE WITH COPLANAR ELECTRODE SURFACE AND METHOD
- PROGRAMMABLE RESISTIVE MEMORY CELL WITH SELF-FORMING GAP
- BRIDGE RESISTANCE RANDOM ACCESS MEMORY DEVICE WITH A SINGULAR CONTACT
STRUCTURE
- SIDE WALL ACTIVE PIN MEMORY AND MANUFACTURING METHOD
- MEMORY ARCHITECTURE AND CELL DESIGN EMPLOYING TWO ACCESS TRANSISTORS
- MANUFACTURING METHOD FOR PHASE CHANGE RAM WITH ELECTRODE LAYER PROCESS
- Memory cell device and manufacturing method
- THIN-FILM FUSE PHASE CHANGE CELL WITH THERMAL ISOLATION LAYER AND
MANUFACTURING METHOD
- METHODS AND APPARATUS FOR A DUAL-METAL MAGNETIC SHIELD STRUCTURE
- PROGRAMMABLE RESISTIVE RAM AND MANUFACTURING METHOD
- MEMORY EMULATION USING RESISTIVITY-SENSITIVE MEMORY
- METHODS OF OPERATING A BI-STABLE RESISTANCE RANDOM ACCESS MEMORY WITH
MULTIPLE MEMORY LAYERS AND MULTILEVEL MEMORY STATES
- COMPOSITIONS FOR REMOVAL OF PROCESSING BY-PRODUCTS AND METHOD FOR USING
SAME
- THIN-FILM FUSE PHASE CHANGE RAM AND MANUFACTURING METHOD
- PHASE CHANGE RANDOM ACCESS MEMORY AND METHOD OF TESTING THE SAME
- PHASE-CHANGE RANDOM ACCESS MEMORY (PRAM) PERFORMING PROGRAM LOOP
OPERATION AND METHOD OF PROGRAMMING THE SAME
- PHASE CHANGE MATERIALS, PHASE CHANGE RANDOM ACCESS MEMORIES HAVING THE
SAME AND METHODS OF OPERATING PHASE CHANGE RANDOM ACCESS MEMORIES
- PHASE-CHANGE MEMORY DEVICE INCLUDING NANOWIRES AND METHOD OF
MANUFACTURING THE SAME
- MEMORY CELL SIDEWALL CONTACTING SIDE ELECTRODE
- FERROELECTRIC MEMORY ARRAY FOR IMPLEMENTING A ZERO CANCELLATION SCHEME
TO REDUCE PLATELINE VOLTAGE IN FERROELECTRIC MEMORY
- PROGRAMMABLE RESISTIVE RAM AND MANUFACTURING METHOD
- METHOD OF CONTROLLING THE RESISTANCE IN A VARIABLE RESISTIVE ELEMENT AND
NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE
- MEMORY DEVICE AND MANUFACTURING METHOD
- PROGRAMMABLE RESISTIVE MEMORY WITH DIODE STRUCTURE
- PHASE CHANGE RANDOM ACCESS MEMORY
- MRAM READ BIT WITH ASKEW FIXED LAYER
- RESISTIVE MEMORY DEVICE
- SEMICONDUCTOR MEMORY DEVICE
- SCALEABLE MEMORY SYSTEMS USING THIRD DIMENSION MEMORY
- MEMORY USING VARIABLE TUNNEL BARRIER WIDTHS
- TOGGLE MEMORY BURST
- MAGNETIC TUNNEL JUNCTION WITH ENHANCED MAGNETIC SWITCHING CHARACTERISTICS
- METHOD TO TIGHTEN SET DISTRIBUTION FOR PCRAM
- PHASE CHANGE RANDOM ACCESS MEMORY AND RELATED METHODS OF OPERATION
- DAMASCENE PHASE CHANGE RAM AND MANUFACTURING METHOD
- METHOD FOR FORMING SELF-ALIGNED THERMAL ISOLATION CELL FOR A VARIABLE
RESISTANCE MEMORY ARRAY
- NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF WRITING INTO THE
SAME
- SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
- Conductive memory stack with sidewall
- METHOD FOR MANUFACTURING A RESISTOR RANDOM ACCESS MEMORY WITH REDUCED
ACTIVE AREA AND REDUCED CONTACT AREAS
- SERIAL MEMORY INTERFACE
- FERROELECTRIC RANDOM ACCESS MEMORIES (FRAMS) HAVING LOWER ELECTRODES
RESPECTIVELY SELF-ALIGNED TO NODE CONDUCTIVE LAYER PATTERNS AND METHODS OF
FORMING THE SAME
- SURFACE TOPOLOGY IMPROVEMENT METHOD FOR PLUG SURFACE AREAS
- GE PRECURSOR, GST THIN LAYER FORMED USING THE SAME, PHASE-CHANGE MEMORY
DEVICE INCLUDING THE GST THIN LAYER, AND METHOD OF MANUFACTURING THE GST
THIN LAYER
- HARDMASK FOR FORMING FERROELECTRIC CAPACITORS IN A SEMICONDUCTOR DEVICE
AND METHODS FOR FABRICATING THE SAME
- CURRENT COMPLIANT SENSING ARCHITECTURE FOR MULTILEVEL PHASE CHANGE MEMORY
- METHOD FOR MANUFACTURING A NARROW STRUCTURE ON AN INTEGRATED CIRCUIT
- THIN-FILM PLATE PHASE CHANGE RAM CIRCUIT AND MANUFACTURING METHOD
- MANUFACTURING METHODS FOR THIN-FILM FUSE PHASE CHANGE RAM
- METHOD FOR MAKING MEMORY CELL DEVICE
- NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND DATA WRITING METHOD
- THERMAL ISOLATION FOR AN ACTIVE-SIDEWALL PHASE CHANGE MEMORY CELL
- METHOD AND STRUCTURE FOR IMPROVED ALIGNMENT IN MRAM INTEGRATION
- METHOD FOR SENSING A SIGNAL IN A TWO-TERMINAL MEMORY ARRAY HAVING
LEAKAGE CURRENT
- MEMORY CELL DEVICE WITH CIRCUMFERENTIALLY-EXTENDING MEMORY ELEMENT
- PHASE CHANGE MATERIALS AND ASSOCIATED MEMORY DEVICES
- NONVOLATILE MEMORY WITH DATA CLEARING FUNCTIONALITY
- PHASE-CHANGE RANDOM ACCESS MEMORY EMPLOYING READ BEFORE WRITE FOR
RESISTANCE STABILIZATION
- MEMORY DEVICES HAVING SHARP-TIPPED PHASE CHANGE LAYER PATTERNS
- METHOD AND APPARATUS FOR REFRESHING PROGRAMMABLE RESISTIVE MEMORY
- MEMORY CELL WITH SEPARATE READ AND PROGRAM PATHS
- VACUUM JACKETED ELECTRODE FOR PHASE CHANGE MEMORY ELEMENT
- FERROELECTRIC RANDOM ACCESS MEMORY DEVICE AND METHOD OF DRIVING THE SAME
- METHOD FOR MAKING A SELF-CONVERGED MEMORY MATERIAL ELEMENT FOR MEMORY
CELL
- TWO-ELEMENT MAGNETIC MEMORY CELL
- Method for production of MRAM elements
- Thermally insulated phase change memory device
- MULTI-STATE MAGNETORESISTANCE RANDOM ACCESS CELL WITH IMPROVED MEMORY
STORAGE DENSITY
- MEMORY ELEMENT WITH REDUCED-CURRENT PHASE CHANGE ELEMENT
- PHASE CHANGE MEMORY CELL AND MANUFACTURING METHOD
- TWO-TERMINAL MEMORY ARRAY HAVING REFERENCE CELLS
- PHASE CHANGE RANDOM ACCESS MEMORY (PRAM) DEVICE HAVING VARIABLE DRIVE
VOLTAGES
- VACUUM JACKET FOR PHASE CHANGE MEMORY ELEMENT
- PHASE CHANGE MEMORY DEVICE AND MANUFACTURING METHOD
- SELF-ALIGNED STRUCTURE AND METHOD FOR CONFINING A MELTING POINT IN A
RESISTOR RANDOM ACCESS MEMORY
- WRITE DRIVER CIRCUIT FOR CONTROLLING A WRITE CURRENT APPLIED TO A PHASE
CHANGE MEMORY BASED ON AN AMBIENT TEMPERATURE
- METHOD FOR TWO-CYCLE SENSING IN A TWO-TERMINAL MEMORY ARRAY HAVING
LEAKAGE CURRENT
- CONDUCTIVE MEMORY STACK WITH NON-UNIFORM WIDTH
- PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF OPERATING THE SAME
- METHOD, APPARATUS AND COMPUTER PROGRAM PRODUCT FOR STEPPED RESET
PROGRAMMING PROCESS ON PROGRAMMABLE RESISTIVE MEMORY CELL
- NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
- METHOD, APPARATUS AND COMPUTER PROGRAM PRODUCT FOR READ BEFORE
PROGRAMMING PROCESS ON MULTIPLE PROGRAMMABLE RESISTIVE MEMORY CELL
- VERTICAL SIDE WALL ACTIVE PIN STRUCTURES IN A PHASE CHANGE MEMORY AND
MANUFACTURING METHODS
- SINGLE-MASK PHASE CHANGE MEMORY ELEMENT
- SELF-ALIGNED MANUFACTURING METHOD, AND MANUFACTURING METHOD FOR
THIN-FILM FUSE PHASE CHANGE RAM
- FERROELECTRIC RANDOM ACCESS MEMOry
- PHASE CHANGE MEMORY HAVING MULTILAYER THERMAL INSULATION
- SPACER ELECTRODE SMALL PIN PHASE CHANGE MEMORY RAM AND MANUFACTURING
METHOD
- SEMICONDUCTOR STORAGE DEVICE
- MEMORY WRITE CIRCUIT
- RESISTANCE RANDOM ACCESS MEMORY DEVICES AND METHOD OF FABRICATION
- CONDUCTIVE MEMORY DEVICE WITH CONDUCTIVE OXIDE ELECTRODES
- MAGNETIC DEVICES AND TECHNIQUES FOR FORMATION THEREOF
- RESISTIVE MEMORY DEVICE
- PIPE SHAPED PHASE CHANGE MEMORY
- MULTI-RESISTIVE STATE ELEMENT WITH REACTIVE METAL
- THERMALLY CONTAINED/INSULATED PHASE CHANGE MEMORY DEVICE AND METHOD
(COMBINED)
- METHODS OF OPERATING A BISTABLE RESISTANCE RANDOM ACCESS MEMORY WITH
MULTIPLE MEMORY LAYERS AND MULTILEVEL MEMORY STATES
- SPACER CHALCOGENIDE MEMORY DEVICE
- TWO-TERMINAL MEMORY ARRAY HAVING REFERENCE CELLS
- METHOD OF MAKING THREE-DIMENSIONAL, 2R MEMORY HAVING A 4F2 CELL SIZE RRAM
- SENSING A SIGNAL IN A TWO-TERMINAL MEMORY ARRAY HAVING LEAKAGE CURRENT
- SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
- FERROELECTRIC RANDOM ACCESS MEMORY CIRCUITS FOR GUARDING AGAINST
OPERATION WITH OUT-OF-RANGE VOLTAGES AND METHODS OF OPERATING SAME
- FERROELECTRIC RANDOM ACCESS MEMORIES (FRAMS) HAVING LOWER ELECTRODES
RESPECTIVELY SELF-ALIGNED TO NODE CONDUCTIVE LAYER PATTERNS AND METHODS OF
FORMING THE SAME
- TWO-CYCLE SENSING IN A TWO-TERMINAL MEMORY ARRAY HAVING LEAKAGE CURRENT
- FERROELECTRIC RANDOM ACCESS MEMORY CAPACITOR AND METHOD FOR
MANUFACTURING THE SAME
- STRAIN CONTROL OF EPITAXIAL OXIDE FILMS USING VIRTUAL SUBSTRATES
- SEPARATE WRITE AND READ ACCESS ARCHITECTURE FOR A MAGNETIC TUNNEL
JUNCTION
- FERROELECTRIC CAPACITOR WITH PARALLEL RESISTANCE FOR FERROELECTRIC MEMORY
- APPARATUS FOR PULSE TESTING A MRAM DEVICE AND METHOD THEREFORE
- ENHANCED FUNCTIONALITY IN A TWO-TERMINAL MEMORY ARRAY
- LOW POWER MAGNETORESISTIVE RANDOM ACCESS MEMORY ELEMENTS
- STORAGE CONTROLLER FOR MULTIPLE CONFIGURATIONS OF VERTICAL MEMORY
- RESISTIVE MEMORY DEVICE WITH A TREATED INTERFACE
- PROVIDING A REFERENCE VOLTAGE TO A CROSS POINT MEMORY ARRAY
- INITIALIZING PHASE CHANGE MEMORIES
- PHASE CHANGE RANDOM ACCESS MEMORY, BOOSTING CHARGE PUMP AND METHOD OF
GENERATING WRITE DRIVING VOLTAGE
- THIN-FILM FUSE PHASE CHANGE RAM AND MANUFACTURING METHOD
- CONTROL OF SET/RESET PULSE IN RESPONSE TO PERIPHERAL TEMPERATURE IN PRAM
DEVICE
- FERROELECTRIC MEMORY DEVICES HAVING A PLATE LINE CONTROL CIRCUIT
- LASER ANNEALING OF COMPLEX METAL OXIDES (CMO) MEMORY MATERIALS FOR
NON-VOLATILE MEMORY INTEGRATED CIRCUITS
- READ BIAS SCHEME FOR PHASE CHANGE MEMORIES
- FERROELECTRIC MEMORY WITH WIDE OPERATING VOLTAGE AND MULTI-BIT STORAGE
PER CELL
- CIRCUITS FOR DRIVING FRAM
- FERROELECTRIC RANDOM ACCESS MEMORY
- INTEGRATED CIRCUIT HAVING A RESISTIVE MEMORY
- SERIAL TRANSISTOR-CELL ARRAY ARCHITECTURE
- PHASE CHANGE RANDOM ACCESS MEMORY DEVICE HAVING VARIABLE DRIVE VOLTAGE
CIRCUIT
- CHAIN FERROELECTRIC RANDOM ACCESS MEMORY (CFRAM) HAVING AN INTRINSIC
TRANSISTOR CONNECTED IN PARALLEL WITH A FERROELECTRIC CAPACITOR
- MAGNETIC FILM STRUCTURE USING SPIN CHARGE, A METHOD OF MANUFACTURING THE
SAME, A SEMICONDUCTOR DEVICE HAVING THE SAME, AND A METHOD OF OPERATING THE
SEMICONDUCTOR DEVICE
- SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
- FERROELECTRIC RANDOM ACCESS MEMORY DEVICE
- MAGNETO-RESISTIVE RANDOM ACCESS MEMORY SIMULATION
- PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD FOR MANUFACTURING
THE SAME
- MRAM READ SEQUENCE USING CANTED BIT MAGNETIZATION
- NONVOLATILE MEMORY SYSTEM USING MAGNETO-RESISTIVE RANDOM ACCESS MEMORY
(MRAM)
- THIN-FILM PLATE PHASE CHANGE RAM CIRCUIT AND MANUFACTURING METHOD
- CROSS-POINT RRAM MEMORY ARRAY HAVING LOW BIT LINE CROSSTALK
- DRIVING METHOD OF VARIABLE RESISTANCE ELEMENT AND MEMORY DEVICE
- TWO-TERMINAL MEMORY ARRAY HAVING REFERENCE CELLS
- CROSS-POINT MEMORY ARRAY WITH FAST ACCESS TIME
- PHASE CHANGE RANDOM ACCESS MEMORY (PRAM) DEVICE
- MAGNETIC ELEMENT UTILIZING SPIN-TRANSFER AND HALF-METALS AND AN MRAM
DEVICE USING THE MAGNETIC ELEMENT
- SYNTHETIC ANTIFERROMAGNET STRUCTURES FOR USE IN MTJS IN MRAM TECHNOLOGY
- FERROELECTRIC CAPACITOR STACK ETCH CLEANING METHODS
- METHOD FOR MANUFACTURING MAGNETO-RESISTIVE RANDOM ACCESS MEMORY
- FERROELECTRIC RANDOM ACCESS MEMORY DEVICE AND METHOD FOR DRIVING THE SAME
- SELF-ALIGNED SMALL CONTACT PHASE-CHANGE MEMORY METHOD AND DEVICE
- SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- METHOD OF PATTERNING A MAGNETIC TUNNEL JUNCTION STACK FOR A
MAGNETO-RESISTIVE RANDOM ACCESS MEMORY
- CHEMICAL MECHANICAL POLISH OF PCMO THIN-FILMS FOR RRAM APPLICATIONS
- MRAM MEMORY WITH RESIDUAL WRITE FIELD RESET
- MAGNETO-RESISTIVE RANDOM ACCESS MEMORY AND DRIVING METHOD THEREOF
- PLATELINE VOLTAGE PULSING TO REDUCE STORAGE NODE DISTURBANCE IN
FERROELECTRIC MEMORY
- SEMICONDUCTOR MEMORY DEVICE HAVING REDUNDANCY CELL ARRAY SHARED BY A
PLURALITY OF MEMORY CELL ARRAYS
- METHOD FOR PRODUCTION OF MRAM ELEMENTS
- CONDUCTIVE MEMORY STACK WITH SIDEWALL
- MAGNETIC SWITCHING WITH EXPANDED HARD-AXIS MAGNETIZATION VOLUME AT
MAGNETO-RESISTIVE BIT ENDS
- METHOD AND SYSTEM FOR PROVIDING CURRENT BALANCED WRITING FOR MEMORY
CELLS AND MAGNETIC DEVICES
- FERROELECTRIC CAPACITOR HYDROGEN BARRIERS AND METHODS FOR FABRICATING
THE SAME
- ETCH-STOP MATERIAL FOR IMPROVED MANUFACTURE OF MAGNETIC DEVICES
- BIT END DESIGN FOR PSEUDO SPIN VALVE (PSV) DEVICES
- FERROELECTRIC CAPACITOR WITH PARALLEL RESISTANCE FOR FERROELECTRIC MEMORY
- ONE-MASK PT/PCMO/PT STACK ETCHING PROCESS FOR RRAM APPLICATIONS
- MAGNETO-RESISTIVE RANDOM ACCESS MEMORY DEVICES AND METHODS FOR
FABRICATING THE SAME
- DEVICE AND METHOD FOR GENERATING REFERENCE VOLTAGE IN FERROELECTRIC
RANDOM ACCESS MEMORY (FRAM)
- SEMICONDUCTOR MEMORY DEVICE AND METHOD OF READING DATA
- LINE DRIVER THAT FITS WITHIN A SPECIFIED LINE PITCH
- METHOD OF SUBSTRATE SURFACE TREATMENT FOR RRAM THIN-FILM DEPOSITION
- TRIPLE PULSE METHOD FOR MRAM TOGGLE BIT CHARACTERIZATION
- FERROELECTRIC CAPACITOR HAVING A SUBSTANTIALLY PLANAR DIELECTRIC LAYER
AND A METHOD OF MANUFACTURE THEREFOR
- MRAM ARCHITECTURE WITH ELECTRICALLY ISOLATED READ AND WRITE CIRCUITRY
- MEMORY ARRAY OF A NON-VOLATILE RAM
- PROVIDING A REFERENCE VOLTAGE TO A CROSS POINT MEMORY ARRAY
- FERROELECTRIC CAPACITOR AND METHOD FOR MANUFACTURING THE SAME
- SERIAL TRANSISTOR-CELL ARRAY ARCHITECTURE
- METHODS FOR FABRICATING A MAGNETIC KEEPER FOR A MEMORY DEVICE
- METHOD AND APPARATUS TO REDUCE STORAGE NODE DISTURBANCE IN FERROELECTRIC
MEMORY
- MAGNETO-RESISTIVE RANDOM ACCESS MEMORY DEVICE STRUCTURES AND METHODS FOR
FABRICATING THE SAME
- NON-VOLATILE MEMORY WITH A SINGLE TRANSISTOR AND RESISTIVE MEMORY ELEMENT
- REFERENCE VOLTAGE GENERATING APPARATUS FOR USE IN A FERROELECTRIC RANDOM
ACCESS MEMORY (FRAM) AND A DRIVING METHOD THEREFOR Patent No.:
- ARCHITECTURES FOR CPP RING SHAPED (RS) DEVICES
- CONDUCTIVE MEMORY ARRAY HAVING PAGE MODE AND BURST MODE WRITE CAPABILITY
- RE-WRITABLE MEMORY WITH MULTIPLE MEMORY LAYERS
- MULTI-STATE MAGNETO-RESISTANCE RANDOM ACCESS CELL WITH IMPROVED MEMORY
STORAGE DENSITY
- FERROELECTRIC MEMORY DEVICE
- SPIN BARRIER ENHANCED MAGNETO-RESISTANCE EFFECT ELEMENT AND MAGNETIC
MEMORY USING THE SAME
- MULTI-RESISTIVE STATE ELEMENT WITH REACTIVE METAL
- LAYOUT OF DRIVER SETS IN A CROSS-POINT MEMORY ARRAY
- CIRCUIT AND METHOD FOR REDUCING FATIGUE IN FERROELECTRIC MEMORIES
- METHOD AND APPARATUS FOR SIMULATING A MAGNETO-RESISTIVE RANDOM ACCESS
MEMORY (MRAM)
- TWO-TERMINAL MEMORY ARRAY HAVING REFERENCE CELLS
- FERROELECTRIC RANDOM ACCESS MEMORY DEVICE AND CONTROL METHOD THEREOF
- MULTI-RESISTIVE STATE MATERIAL THAT USES DOPANTS
- CONDUCTIVE MEMORY DEVICE WITH CONDUCTIVE OXIDE ELECTRODES
- PCMO THIN-FILM WITH RESISTANCE RANDOM ACCESS MEMORY (RRAM)
CHARACTERISTICS
- SEMICONDUCTOR STORAGE DEVICE
- PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD FOR MANUFACTURING
THE SAME
- LOW TEMPERATURE DEPOSITION OF COMPLEX METAL OXIDES (CMO) MEMORY
MATERIALS FOR NON-VOLATILE MEMORY INTEGRATED CIRCUITS
- NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE
- SEMICONDUCTOR MEMORY DEVICE
- FERROELECTRIC MEMORY WITH AN INTRINSIC ACCESS TRANSISTOR COUPLED TO A
CAPACITOR
- ADAPTIVE PROGRAMMING TECHNIQUE FOR A RE-WRITABLE CONDUCTIVE MEMORY DEVICE
- CROSS-POINT MEMORY ARCHITECTURE WITH IMPROVED SELECTIVITY
- METHOD FOR FABRICATING FERROELECTRIC RANDOM ACCESS MEMORY DEVICE
- BIAS-ADJUSTED MAGNETO-RESISTIVE DEVICES FOR MAGNETIC RANDOM ACCESS
MEMORY (MRAM) APPLICATIONS
- MEMORY ARRAY WITH HIGH TEMPERATURE WIRING
- SPACER CHALCOGENIDE MEMORY METHOD
- METHOD OF AFFECTING RRAM CHARACTERISTICS BY DOPING PCMO THIN-FILms
- MRAM DEVICE INTEGRATED WITH OTHER TYPES OF CIRCUITRY
- EPIR DEVICE AND SEMICONDUCTOR DEVICES UTILIZING THE SAME
- TUNNELING ANISOTROPIC MAGNETO-RESISTIVE DEVICE AND METHOD OF OPERATION
- PSEUDO TUNNEL JUNCTION
- TERMINAL TRAPPED CHARGE MEMORY DEVICE WITH VOLTAGE SWITCHABLE
MULTI-LEVEL RESISTANCE
- DISCHARGE OF CONDUCTIVE ARRAY LINES IN FAST MEMORY
- CROSS-POINT ARRAY USING DISTINCT VOLTAGES
- LOW SILICON-HYDROGEN SIN LAYER TO INHIBIT HYDROGEN-RELATED DEGRADATION
IN SEMICONDUCTOR DEVICES HAVING FERROELECTRIC COMPONENTS
- COMPOSITIONS FOR REMOVAL OF PROCESSING BY-PRODUCTS AND METHOD FOR USING
SAME
- MAGNETO-RESISTIVE RANDOM ACCESS MEMORY WITH HIGH SELECTIVITY
- MAGNETO-RESISTIVE RANDOM ACCESS MEMORY
- LINE DRIVERS THAT USE MINIMAL METAL LAYERS
- CONDUCTIVE MEMORY STACK WITH NON-UNIFORM WIDTH
- ZERO CANCELLATION SCHEME TO REDUCE PLATELINE VOLTAGE IN FERROELECTRIC
MEMORY
- 3D RRAM
- MRAM STORAGE DEVICE
- METHOD OF FORMING AND USING A HARDMASK FOR FORMING FERROELECTRIC
CAPACITORS IN A SEMICONDUCTOR DEVICE
- HYDROGEN-LESS CVD TIN PROCESS FOR FERAM VIA0 BARRIER APPLICATION
- NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND CONTROL METHOD THEREOF
- CROSS-POINT MEMORY ARRAY EXHIBITING A CHARACTERISTIC HYSTERESIS
- NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE, AND PROGRAMMING METHOD AND
ERASING METHOD THEREOF
- SERIES CONNECTED TC UNIT TYPE FERROELECTRIC RAM AND TEST METHOD THEREOF
- HYDROGEN BARRIER FOR PROTECTING FERROELECTRIC CAPACITORS IN A
SEMICONDUCTOR DEVICE AND METHODS FOR FABRICATING THE SAME
- BRIDGE-TYPE MAGNETIC RANDOM ACCESS MEMORY (MRAM) LATCH
- METHOD FOR READING A PASSIVE MATRIX-ADDRESSABLE DEVICE AND A DEVICE FOR
PERFORMING THE METHOD
- FERROELECTRIC CAPACITOR HYDROGEN BARRIERS AND METHODS FOR FABRICATING
THE SAME
- PATENT ANALYSIS
- table 10 NUMBER OF U.S. PATENTS GRANTED TO COMPANIES FOR NON-VOLATILE
EMERGING MEMORY TECHNOLOGIES FROM 2006 THROUGH APRIL 2010
- FIGURE 16 number OF u.s. PATENTS GRANTED to companies for non-volatile
emerging memory technologies From 2006 through april 2010
- International overview of u.s. PATENT Activity in emerging non-volatile
random access memory
- table 11 NUMBER OF U.S. PATENTS GRANTED TO COMPANIES FOR NON-VOLATILE
EMERGING MEMORY PRODUCTS BY REGION FROM 2006 THROUGH APRIL 2010
company profiles
- 4DS, Inc.
- Adesto Tehnologies
- ADVANCED MATERIALS INNOVATION CENTER (AMIC)
- BAE Systems plc
- Crocus Technology
- Cypress Semiconductor corporation
- Elpida Memory, Inc.
- Everspin Technologies, inc.
- Fujitsu Components America, Inc.
- Grandis, Inc.
- Hewlett-Packard Company
- Honeywell International Inc.
- Hynix Semiconductor America Inc.
- INternational business machines (IBM) Corporation
- IM Flash Technologies, LLC
- Imec Belgium
- Infineon Technologies AG
- Innovative Silicon, Inc.
- Intel corporation
- Macronix International Co., ltd.
- Matsushita Electric industrial Corporation (Panasonic)
- Micromem Technologies Inc.
- Micron Technology, Inc.
- MOSYS, INC
- Netrino, LLC
- Nantero, Inc.
- Numonyx
- NVE Corporation
- Ovonyx, Inc.
- Qs Semiconductor Corp.
- Ramtron international corporation
- Renesas ELECTRONICS CORPORATION (Hitachi)
- SAMSUNG Semiconductor
- Sharp Laboratories of America
- ST Microelectronics
- Symetrix Corporation
- Texas Instruments Inc.
- Thin Film Electronics AB
- TOSHIBA
- Unity Semiconductor Corporation
- Unity Semiconductor Corporation (continued)
Annexure A
- Explanations of terminologies applicable to conventional non-volatile
random access memory (RAM)
- PROm
- EPROM
- EEPROM
- DRAM
- SRAM
- NVSRAM
