GaAs IC市場
市場調查報告書
商品編碼
1266894

GaAs IC市場

The GaAs IC Market

出版日期: | 出版商: Information Network | 英文 | 商品交期: 2-3個工作天內

價格

本報告提供GaAs IC市場相關調查分析,技術趨勢,用途,市場發展等資訊。

目錄

第1章 簡介

第2章 摘要整理

第3章 技術的問題

  • GaAs設備
    • FET
    • HEMT
    • HBT
  • Logic結構的比較
  • 重要的問題
    • 晶圓生產
    • 蝕坑密度
  • 設備
    • 植入
    • 微影術
    • 蝕刻
    • 成薄膜
    • 急速熱處理
  • 包裝
    • 包裝的種類
    • 連接
  • 實驗
  • 設計

第4章 GaAs IC的應用

  • 簡介
    • 更高的頻率趨勢
    • 從類比轉移到數位調變
    • 分離式零組件和矽基IC
  • 市場
    • 通信系統
    • 電視系統
    • 運算
    • 資料通訊
    • 汽車
    • 自動實驗設備
    • 軍事

第5章 IC的供應商和終端用戶的問題

  • 簡介
  • 矽的競爭
  • 日本人的競爭
  • 台灣市場氣勢
  • 韓國市場氣勢
  • 晶圓尺寸
  • SiGe的競爭
    • 簡介
    • 技術
    • 用途

第6章 市場預測

  • 促進因素
  • 市場預測的前提條件
  • GaAs IC市場預測
  • SiGe IC市場預測
  • 最終用途市場

第7章 GaAs IC製造商簡介

The biggest enabler of the mobile data increase and the most important driver of the GaAs RF IC market is the handset segment. Much of the content of a handset is silicon-based, but power amplifiers (PAs) and switches in the front-end of the phone use GaAs devices. This report investigates the technology trends, applications, and market developments of GaAs ICs. U.S., Japanese, and European applications such as telecom, computers, defense, consumers, are reviewed. This report will provide the reader with an in-depth understanding of the technological and market factors determining the evolution of GaAs ICs.

Every cell phone contains Power Amplifiers (PA), which enables the handset to transmit voice and data back to the base station tower to route a call to another phone number or Internet address. PAs, the most critical radio frequency component in the phone are currently dominated by circuits made with Gallium Arsenide (GaAs).

Table of Contents

Chapter 1. Introduction

Chapter 2. Executive Summary

  • 2.1. Summary of Major Issues
  • 2.2. Summary of Market Forecast

Chapter 3. Technology Issues

  • 3.1. GaAs Devices
    • 3.1.1. FETs
    • 3.1.2. HEMTs
    • 3.1.3. HBT
  • 3.2. Comparison of Logic Structures
    • 3.2.1. Buffered FET Logic
    • 3.2.2. FET Logic
    • 3.2.3. Capacitively Enhanced Logic
    • 3.2.4. Direct-Coupled FET Logic
    • 3.2.5. Source-Coupled FET Logic
  • 3.3. Material Issues
    • 3.3.1. Wafer Production
    • 3.3.2. Etch Pit Densities
  • 3.4. Equipment
    • 3.4.1. Implanters
    • 3.4.2. Lithography
    • 3.4.3. Etching
    • 3.4.4. Deposition
    • 3.4.5. Rapid Thermal Processing
  • 3.5. Packaging
    • 3.5.1. Package Types
    • 3.5.2. Bonding
  • 3.6. Testing
  • 3.7. Design

Chapter 4. Applications for GaAs ICs

  • 4.1. Introduction
    • 4.1.1. The Trend Toward Higher Frequencies
    • 4.1.2. Transition from Analog to Digital Modulation
    • 4.1.3. Discrete Components and Silicon-Based ICs
  • 4.2. Markets
    • 4.2.1. Telecommunications Systems
    • 4.2.2. Television Systems
    • 4.2.3. Computing
    • 4.2.4. Data Communications
    • 4.2.5. Automotive
    • 4.2.6. Automated Test Equipment
    • 4.2.7. Military

Chapter 5. IC Supplier and End-User Issues

  • 5.1. Introduction
  • 5.2. Competing Against Silicon
  • 5.3. Competing Against The Japanese
  • 5.4. Taiwan's Market Momentum
  • 5.5. Korea's Market Momentum
  • 5.6. Wafer Sizes
  • 5.7. Competing Against SiGe
    • 5.7.1. Introduction
    • 5.7.2. Technology
      • 5.7.2.1. Strained Silicon
      • 5.7.2.2. Device Manufacturing
    • 5.7.3. Applications
      • 5.7.3.1. Wireless LAN
      • 5.7.3.2. WiMAX
      • 5.7.3.3. Bluetooth
      • 5.7.3.4. Cellular
      • 5.7.3.5. GPS

Chapter 6. Market Forecast

  • 6.1. Driving Forces
  • 6.2. Market Forecast Assumptions
  • 6.3. GaAs IC Market Forecast
  • 6.4. SiGe IC Market Forecast
  • 6.5. End Application Market

Chapter 7. Profile of GaAs IC Manufacturers

List of Tables

  • 5.1. Cost Comparison for GaAs Structures
  • 5.2. A Comparison of SiGe BiCMOS, RF CMOS, and InGaP/GaAs
  • 6.1. Worldwide Merchant GaAs IC Market Forecast By Device Type
  • 6.2. Worldwide Merchant Market Forecast By Geographical Region
  • 6.3. Worldwide Merchant Market Forecast By Application
  • 6.4. Market Shares of Merchant Participants - 2013

List of Figures

  • 3.1. Schematic of GaAs MESFET
  • 3.2. Schematic of GaAs HEMT Device
  • 3.3. Schematic of GaAs HBT Device
  • 3.4. Schematic of GaAs HBT Device
  • 3.5. Symbolic Representations of Various GaAs Transistor Type
  • 3.6. Schematic of BFL Logic Gate
  • 3.7. Schematic of FETL Logic Gate
  • 3.8. Schematic of CEL Logic Gate
  • 3.9. Schematic of DCFL Logic Gate
  • 3.10. Schematic of SCFL Logic Gate
  • 3.11. Full wafer EPD mapping of LEC and VGF wafers
  • 3.12. Mesoscopic EL2 mapping of LEC and VGF wafers
  • 3.13. pHEMT MMIC Process Flow Chart
  • 3.14. 0.15 Micron 3MI Process Cross Section
  • 3.15. InGaP HBT Process
  • 5.1. Comparison of Die Costs of Si and GaAs
  • 5.2. Strained Silicon Germanium Technology
  • 5.3. Fourth Generation Of Strain Technology
  • 5.4. Performance Versus Germanium Content
  • 5.5. Bulk Versus SOI Strain Method
  • 6.1. Worldwide Merchant GaAs IC Market Forecast
  • 6.2. Worldwide GaAs Merchant Market Forecast By Geographical Region
  • 6.3. Worldwide GaAs Merchant Market Forecast By Application
  • 6.4. Global Handset Market
  • 6.5. Migration Of PA's In Handset Market
  • 6.6. CMOS Replacement Of Bipolar And GaAs
  • 6.7. Worldwide SiGe Market Forecast