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市場調查報告書

GaAs IC 市場之分析與預測

The GaAs IC Market

出版商 Information Network 商品編碼 4972
出版日期 內容資訊 英文 155 pages
商品交期: 最快1-2個工作天內
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GaAs IC 市場之分析與預測 The GaAs IC Market
出版日期: 2016年11月01日 內容資訊: 英文 155 pages
簡介

本報告針對GaAs IC技術課題、應用市場、IC供應商與使用者面對的課題與市場相關預測以及主要製造商檔案,目錄介紹如下。

第1章 介紹

第2章 摘要整理

  • 主要課題相關摘要
  • 市場預測相關摘要

第3章 技術課題

  • GaAs設備
    • FET
    • HEMT
    • HBT
  • 邏輯構造比較
    • 緩衝場效電晶體邏輯
    • FET邏輯
    • 容量擴充型邏輯
    • DCFL
    • SCFL
  • 材料相關課題
    • 晶圓生産
    • 腐蝕坑密度
  • 設備
    • 植入
    • 光刻
    • 蝕刻
    • 沉積
    • RTP(急速加熱處理裝置)
  • 封裝類型
    • 封裝種類
    • 連接
  • 測試
  • 設計

第4章 GaAs IC用途

  • 概要
  • 市場
    • 通訊系統
    • 電視系統
    • 計算
    • 資料通訊
    • 汽車
    • 自動測試設備
    • 軍事

第5章 IC 供應商與使用者課題

  • 概要
  • 與半導體的競爭
  • 與日本產品的競爭
  • 台灣市場
  • 韓國市場
  • 晶圓尺寸
  • 與SiGe的競爭

第6章 市場預測

  • 市場影響因素
  • 市場預測前題條件
  • GaAs IC市場預測
  • SiGe IC市場預測
  • 應用市場

第7章 GaAs IC製造商檔案

圖表

目錄

The biggest enabler of the mobile data increase and the most important driver of the GaAs RF IC market is the handset segment. Much of the content of a handset is silicon-based, but power amplifiers (PAs) and switches in the front-end of the phone use GaAs devices. This report investigates the technology trends, applications, and market developments of GaAs ICs. U.S., Japanese, and European applications such as telecom, computers, defense, consumers, are reviewed. This report will provide the reader with an in-depth understanding of the technological and market factors determining the evolution of GaAs ICs.

Every cell phone contains Power Amplifiers (PA), which enables the handset to transmit voice and data back to the base station tower to route a call to another phone number or Internet address. PAs, the most critical radio frequency component in the phone are currently dominated by circuits made with Gallium Arsenide (GaAs).

Table of Contents

Chapter 1 - Introduction

Chapter 2 - Executive Summary

  • 2.1. Summary of Major Issues
  • 2.2. Summary of Market Forecast

Chapter 3 - Technology Issues

  • 3.1. GaAs Devices
    • 3.1.1. FETs
    • 3.1.2. HEMTs
    • 3.1.3. HBT
  • 3.2. Comparison of Logic Structures
    • 3.2.1. Buffered FET Logic
    • 3.2.2. FET Logic
    • 3.2.3. Capacitively Enhanced Logic
    • 3.2.4. Direct-Coupled FET Logic
    • 3.2.5. Source-Coupled FET Logic
  • 3.3. Material Issues
    • 3.3.1. Wafer Production
    • 3.3.2. Etch Pit Densities
  • 3.4. Equipment
    • 3.4.1. Implanters
    • 3.4.2. Lithography
    • 3.4.3. Etching
    • 3.4.4. Deposition
    • 3.4.5. Rapid Thermal Processing
  • 3.5. Packaging
    • 3.5.1. Package Types
    • 3.5.2. Bonding
  • 3.6. Testing
  • 3.7. Design

Chapter 4 - Applications for GaAs ICs

  • 4.1. Introduction
    • 4.1.1. The Trend Toward Higher Frequencies
    • 4.1.2. Transition from Analog to Digital Modulation
    • 4.1.3. Discrete Components and Silicon-Based ICs
  • 4.2. Markets
    • 4.2.1. Telecommunications Systems
    • 4.2.2. Television Systems
    • 4.2.3. Computing
    • 4.2.4. Data Communications
    • 4.2.5. Automotive
    • 4.2.6. Automated Test Equipment
    • 4.2.7. Military

Chapter 5 - IC Supplier and End-User Issues

  • 5.1. Introduction
  • 5.2. Competing Against Silicon
  • 5.3. Competing Against The Japanese
  • 5.4. Taiwan's Market Momentum
  • 5.5. Korea's Market Momentum
  • 5.6. Wafer Sizes
  • 5.7. Competing Against SiGe
    • 5.7.1. Introduction
    • 5.7.2. Technology
      • 5.7.2.1. Strained Silicon
      • 5.7.2.2. Device Manufacturing
    • 5.7.3. Applications
      • 5.7.3.1. Wireless LAN
      • 5.7.3.2. WiMAX
      • 5.7.3.3. Bluetooth
      • 5.7.3.4. Cellular
      • 5.7.3.5. GPS

Chapter 6 - Market Forecast

  • 6.1. Driving Forces
  • 6.2. Market Forecast Assumptions
  • 6.3. GaAs IC Market Forecast
  • 6.4. SiGe IC Market Forecast
  • 6.5. End Application Market

Chapter 7 - Profile of GaAs IC Manufacturers

List of Tables

  • 5.1: Cost Comparison for GaAs Structures
  • 5.2: A Comparison of SiGe BiCMOS, RF CMOS, and InGaP/GaAs
  • 6.1: Worldwide Merchant GaAs IC Market Forecast By Device Type
  • 6.2: Worldwide Merchant Market Forecast By Geographical Region
  • 6.3: Worldwide Merchant Market Forecast By Application
  • 6.4: Market Shares of Merchant Participants - 2013

List of Figures

  • 3.1: Schematic of GaAs MESFET
  • 3.2: Schematic of GaAs HEMT Device
  • 3.3: Schematic of GaAs HBT Device
  • 3.4: Schematic of GaAs HBT Device
  • 3.5: Symbolic Representations of Various GaAs Transistor Type
  • 3.6: Schematic of BFL Logic Gate
  • 3.7: Schematic of FETL Logic Gate
  • 3.8: Schematic of CEL Logic Gate
  • 3.9: Schematic of DCFL Logic Gate
  • 3.10: Schematic of SCFL Logic Gate
  • 3.11: Full wafer EPD mapping of LEC and VGF wafers
  • 3.12: Mesoscopic EL2 mapping of LEC and VGF wafers
  • 3.13: pHEMT MMIC Process Flow Chart
  • 3.14: 0.15 Micron 3MI Process Cross Section
  • 3.15: InGaP HBT Process
  • 5.1: Comparison of Die Costs of Si and GaAs
  • 5.2: Strained Silicon Germanium Technology
  • 5.3: Fourth Generation Of Strain Technology
  • 5.4: Performance Versus Germanium Content
  • 5.5: Bulk Versus SOI Strain Method
  • 6.1: Worldwide Merchant GaAs IC Market Forecast
  • 6.2: Worldwide GaAs Merchant Market Forecast By Geographical Region
  • 6.3: Worldwide GaAs Merchant Market Forecast By Application
  • 6.4: Global Handset Market
  • 6.5: Migration Of PA's In Handset Market
  • 6.6: CMOS Replacement Of Bipolar And GaAs
  • 6.7: Worldwide SiGe Market Forecast
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