GaAs IC 市場之分析與預測

GaAs IC 市場之分析與預測 是由出版商The Information Network在2012年01月所出版的。 這份英文市場調查報告書包含155 pages 價格從美金2495起跳。

目錄

Microwave Monolithic Integrated circuits, MMIC and RFIC, is the foundation of today's telecommunication and sensor systems.While GaAs and silicon based IC-technologies are used in today's microwave link, radar, and remote sensing applications, emerging technologies such as wide band gap (SiC, GaN etc) and InP/antimonide based devices are expected to become commercially available within a few years, with an expected large impact on system performance. The downscaling of silicon technologies such as CMOS and SiGe-HBT according the Moore's law, has now resulted in device performance close to the III-V technologies with cut-off frequencies exceeding 300GHz. As an expected result, highly integrated microwave and millimetre wave systems will likely be available also for broader consumer massmarket applications due to the reduced cost and increased functionality.

For GaAs IC suppliers, there are a number of trends. We've been waiting years for 3G mobile and it looks like it's finally here with meaningful volumes in the 150 million unit region. The 3G RF chip content of a cell phone and see it has gone up significantly because of the multi-mode, multi-band phones. There's just more RF content in there. In the industry, the GaAs content for GSM phones is around $1.50, for an EDGE phone, $2.50, for a 3G phone about $6. Similar things are going on in the WiFi space. It's going through the transition to 802.11n, which has more RF content. The transition takes the RF content value from below $1 to above $2. On the supply side, the RF industry has seen consolidation over the past few years. RF has lost suppliers. Philips was a large player. They spun out NXP and announced they will not participate in the RF space. Renesas slowly looked to other areas for growth and lost RF share. There used to be four GaAs fabs in Taiwan and now there are two. We anticipate rising demand and finally, consolidation of supply around the big players.

There is investment going on now for auto radar for both adaptive cruise control and early warning for collision. If you can have a couple fractions of a second early warning before an actual collision, certain things can be deployed in the car fractions of second earlier and have a favorable impact on the likelihood of survivability of an accident. So the industry is looking closely at auto radar. Not only for safety but also for convenience. Adaptive cruise control sets a distance instead of speed. Collision detection and the early deployment of safety features is a good market for our technology because they're looking at 77Ghz as one of the bands for this type of activity and that's in the sweet spot for our technology.

Improvements in integration envelope for GaAs ICs and the ability to operate at higher voltages will give this technology a new lease on life. The rapid trend toward complex multiband, multimode cellular and mobile handset designs with integrated front-end modules will continue to drive the consumption of compound semiconductor HBTs and pHEMTs in emerging handsets, while the ability to deliver linear, rugged high-power Pas at 24 V to 28 V will open the infrastructure door for GaAs HBTs.

Chapter 1 - Introduction

Chapter 2 - Executive Summary

• 2.1. Summary of Major Issues
• 2.2. Summary of Market Forecast

Chapter 3 - Technology Issues

• 3.1. GaAs Devices
  • 3.1.1. FETs
  • 3.1.2. HEMTs
  • 3.1.3. HBT
• 3.2. Comparison of Logic Structures
  • 3.2.1. Buffered FET Logic
  • 3.2.2. FET Logic
  • 3.2.3. Capacitively Enhanced Logic
  • 3.2.4. Direct-Coupled FET Logic
  • 3.2.5. Source-Coupled FET Logic
• 3.3. Material Issues
  • 3.3.1. Wafer Production
  • 3.3.2. Etch Pit Densities
• 3.4. Equipment
  • 3.4.1. Implanters
  • 3.4.2. Lithography
  • 3.4.3. Etching
  • 3.4.4. Deposition
  • 3.4.5. Rapid Thermal Processing
• 3.5. Packaging
  • 3.5.1. Package Types
  • 3.5.2. Bonding
• 3.6. Testing
• 3.7. Design

Chapter 4 - Applications for GaAs ICs

• 4.1. Introduction
  • 4.1.1. The Trend Toward Higher Frequencies
  • 4.1.2. Transition from Analog to Digital Modulation
  • 4.1.3. Discrete Components and Silicon-Based ICs
• 4.2. Markets
  • 4.2.1. Telecommunications Systems
  • 4.2.2. Television Systems
  • 4.2.3. Computing
  • 4.2.4. Data Communications
  • 4.2.5. Automotive
  • 4.2.6. Automated Test Equipment
  • 4.2.7. Military

Chapter 5 - IC Supplier and End-User Issues

• 5.1. Introduction
• 5.2. Competing Against Silicon
• 5.3. Competing Against The Japanese
• 5.4. Taiwan's Market Momentum
• 5.5. Korea's Market Momentum
• 5.6. Wafer Sizes
• 5.7. Competing Against SiGe
  • 5.7.1. Introduction
  • 5.7.2. Technology
    • 5.7.2.1. Strained Silicon
    • 5.7.2.2. Device Manufacturing
  • 5.7.3. Applications
    • 5.7.3.1. Wireless LAN
    • 5.7.3.2. WiMAX
    • 5.7.3.3. Bluetooth
    • 5.7.3.4. Cellular
    • 5.7.3.5. GPS

Chapter 6 - Market Forecast

• 6.1. Driving Forces
• 6.2. Market Forecast Assumptions
• 6.3. GaAs IC Market Forecast
• 6.4. SiGe IC Market Forecast
• 6.5. End Application Market

Chapter 7 - Profile of GaAs IC Manufacturers

• 5.1. Cost Comparison for GaAs Structures
• 5.2. A Comparison of SiGe BiCMOS, RF CMOS, and InGaP/GaAs
• 6.1. Worldwide Merchant GaAs IC Market Forecast By Device Type
• 6.2. Worldwide Merchant Market Forecast By Geographical Region
• 6.3. Worldwide Merchant Market Forecast By Application
• 6.4. Market Shares of Merchant Participants - 2011
• 6.5. A Comparison of SiGe BiCMOS, RF CMOS, and InGaP/GaAs

• 3.1. Schematic of GaAs MESFET
• 3.2. Schematic of GaAs HEMT Device
• 3.3. Schematic of GaAs HBT Device
• 3.4. Schematic of GaAs HBT Device
• 3.5. Symbolic Representations of Various GaAs Transistor Type
• 3.6. Schematic of BFL Logic Gate
• 3.7. Schematic of FETL Logic Gate
• 3.8. Schematic of CEL Logic Gate
• 3.9. Schematic of DCFL Logic Gate
• 3.10. Schematic of SCFL Logic Gate
• 3.11. Full wafer EPD mapping of LEC and VGF wafers
• 3.12. Mesoscopic EL2 mapping of LEC and VGF wafers
• 3.13. pHEMT MMIC Process Flow Chart
• 3.14. 0.15 Micron 3MI Process Cross Section
• 3.15. InGaP HBT Process
• 5.1. Comparison of Die Costs of Si and GaAs
• 5.2. Strained Silicon Germanium Technology
• 5.3. Fourth Generation Of Strain Technology
• 5.4. Performance Versus Germanium Content
• 5.5. Bulk Versus SOI Strain Method
• 6.1. Worldwide Merchant GaAs IC Market Forecast
• 6.2. Worldwide GaAs Merchant Market Forecast By Geographical Region
• 6.3. Worldwide GaAs Merchant Market Forecast By Application
• 6.4. Global Handset Market
• 6.5. Migration Of PA's In Handset Market
• 6.6. CMOS Replacement Of Bipolar And GaAs
• 6.7. Worldwide SiGe Market Forecast

Press Release

GaAs IC市場預計2011年僅有1％之成長，其2010年之成長率為36％

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