次微米微影技術：市場分析與策略問題 是由出版商The Information Network在2011年01月所出版的。
這份英文市場調查報告書包含150 PAGES 價格從美金2495起跳。
通訊與線路、電腦工業分類的市場調査得到來自全球高評價的 The Information Network（總公司：賓州）提供次微米微影技術市場與策略挑戰相關調查・分析所製作的報告 “Sub 100-nm Lithography: Market Analysis and Strategic Issues”已發行。
本報告針對光學系統、X光系統、電子光束與離子光束等各種微光技術動向與課題，提供供應商策略與今後預測，目錄介紹如下。
第 1 章介紹
第 2 章摘要整理
第 3 章微影技術課題與動向
- 光學系統
- 投射式對準機
- 光刻步進機＆重複式步進對準機
- 248nm DUV光阻
- 193nm DUV光阻
- Mix-and-Match
- 157nm DUV 與光阻
- EUV
- X光系統
- 電子束系統
- 粒子束系統
- 新技術
- Mulith Reference Distribution Aerial Image Formation
- 全息圖
- X光雷射
- 原子微影技術
- 微透鏡
- 奈米壓印
- EWL Lithography
- 微影技術所有成本分析
- 概要
- 所有成本模式
- 所有成本計算結果
- 單獨計算成本
- 總結
第 4 章供應商策略
- 微影技術需求定義
- 供應商基準
- 價格
- 供應商承諾與態度
- 供應商能力
- 系統性能
- 設備評估中的供應商反映
- 設備生産中的供應商反映
- 競爭環境
- Class1無塵室設備
- 未來型工廠設備
- 市場機會
第 5 章市場預測
Abstract
Each new generation of IC devices brings about a corresponding decrease in
linewidths and minimum feature sizes. The technological trends and innovations
in IC fabrication processes directly influences the market for
microlithography equipment. This market is the most competitive of all
front-end semiconductor equipment markets, due to the high price of the
equipment and the potential for high profit.
Optical methods of wafer imaging have remained the dominant force in the IC
industry, despite claims made by E-beam, X-ray, and focused ion beam equipment
manufacturers that even higher resolution is needed for VLSI devices. Two of
the main reasons for the continual acceptance of this technology have been
system maturity and the development of more effective exposure ultraviolet
radiation. The current advances in optical system will eventually reach their
limits, resulting in competitive marketing and technology strategies by X-ray
vendors for a share of the microlithography market.
American, Japanese, and European suppliers are reviewed in this report, and
the market growth is established to 2009 for step-and-scan projection aligners
and step-and-repeat aligners. This report also examines and projects the
technologies involved, their likely developments, what problems and choices
are facing users, and where the opportunities and pitfalls are.
Current advances in optical systems could reach their limitation for 4 Gbit
devices, but will continue to be a driving force. X-ray technology is being
positioned to step in. However, Sematech' s endorsement of EUV will push this
technology to the forefront. Advances in optics, phase shift masks, and
photoresists are fueling optical lithography and will further complicate the
future marketplace.
The primary objective of this report is to review the current issues dealing
with lithography as applied to the manufacture of VLSI devices.
Topics specifically covered include:
- Technology trends
- Products
- Applications
- Suppliers
- Markets
- Opportunities and strategies
This report examines and projects the technologies involved, their likely
developments, what problems and choices are facing users, and where the
opportunities and pitfalls are. The worldwide markets are analyzed and
projected.
Table of Contents
Chapter 1 - Introduction
- 1.1 The Need For This Report
Chapter 2 - Executive Summary
- 2.1 Summary of Major Issues
- 2.2 Summary of Market Opportunities
Chapter 3 - Lithography Issues And Trends
- 3.1 Optical Systems
- 3.1.1 Step-and-Repeat Aligners
- 3.1.2 248nm DUV Resist
- 3.1.3 193nm DUV Resist
- 3.1.4 Mix-and-Match
- 3.1.5 Immersion Lithography
- 3.1.6 EUV
- 3.2 X-Ray Systems
- 3.2.1 X-Ray Sources
- 3.2.2 X-Ray Masks
- 3.2.3 X-Ray Steppers
- 3.2.4 X-Ray Resists
- 3.3 Electron Beam Systems
- 3.4 Ion Beam Systems
- 3.4.1 Direct Write
- 3.4.2 Ion Channel Masking
- 3.4.3 Ion Projection
- 3.5 Nano-Imprint Lithography
- 3.6 New Technologies
- 3.6.1 Mulith Reference Distribution Aerial Image Formation
- 3.6.2 Holograms
- 3.6.3 X-Ray Laser
- 3.6.4 Atom Lithography
- 3.6.5 Microlenses
- 3.6.7 EWL Lithography
- 3.7 Evaluation of Lithography Cost of Ownership
- 3.7.1 Introduction
- 3.6.2 Cost of Ownership Model
- 3.6.3 Results of Cost of Ownership Calculation
- 3.6.4 Individual Cost Estimation
- Lithography System Cost
- Process Costs
- Mask Costs
- 3.7 Conclusion
Chapter 4 - User-Supplier Strategies
- 4.1 Determining Lithography Needs
- 4.2 Benchmarking a Vendor
- 4.2.1 Pricing
- 4.2.2 Vendor Commitment and Attitudes
- 4.2.3 Vendor Capabilities
- 4.2.4 System Capabilities
- 4.2.5 Vendor Feedback During Equipment Evaluation 4-
- 4.2.6 Vendor Feedback During Device Production
- 4.3 Competitive Environment
- 4.4 Equipment For Class 1 Cleanrooms
- 4.5 Equipment For the Factory of the Future
- 4.6 Opportunities
Chapter 5 - Market Forecast
- 5.1 Driving Forces
- 5.1.1 Technical Trends
- 5.1.2 Economic Trends
- 5.1.3 Optical Limitations
- 5.2 Market Forecast Assumptions
- 5.3 Market Forecast
LIST OF TABLES
- 3.1 Lithography Requirements for IC Production
- 3.2 Characteristics of X-Ray Systems
- 3.3 Basic Conditions of CoO Model
- 3.4 Calculation List of Lithography System Cost
- 3.5 Throughput Estimation of X-Ray Lithography
- 3.6 Cost of Reticle/X-Ray Mask
- 3.7 Phase Shift Mask and X-Ray Mask Manufacturing
- 5.1 Worldwide Capital Spending 2007 - 2010
- 5.2 DRAM Lithographic Requirements
- 5.3 Worldwide Optical Stepper Market
- 5.4 Worldwide Stepper Market Shares - 1992-2008
LIST OF FIGURES
- 1.1 Lithographic Equipment Requirements for DRAMs
- 3.1 Lithography Roadmap
- 3.2 Lens Arrangement For Submicron Features
- 3.3 Advanced Optical Lithography Scenarios
- 3.4 Mix-and-Match Approaches
- 3.5 High Index Refractive Materials
- 3.6 EUV Lithography
- 3.7 Illustration of X-Ray Lithography
- 3.8 Schematic Of Scalpel Electron Beam System
- 3.9 Multi-Source E-Beam Lithography
- 3.10 Principles of LEEPL
- 3.11 Ion Projection Lithography System
- 3.12 Hermoplastic Nanoimprint Lithography Process
- 3.13 Step And Flash Nanoimprint Lithography Process
- 3.14 Mulith Reference Distribution Aerial Image Formation
- 3.15 Schematic of Microlens
- 3.16 Mapper Mask-Based Lithography
- 3.17 Mapper Maskless Lithography
- 3.18 CoO Value in DRAM Mass Production
- 3.19 Lithography Costs for 40,000 Wafers/Mask
- 3.20 Lithography Costs for 1,000 Wafers/Mask
- 4.1 Manufacturing Costs Per Exposure Station
- 5.1 Lithography Market Vs Equipment Market
- 5.2 Lithography Double Exposure Technique
- 5.3 Lithography Requirements
- 5.4 Lithography Extensions
- 5.5 Lithography Cost of Ownership
- 5.6 Segmentation of Stepper/Scan Shipments
- 5.7 Market Shares of Vendors (Units) - 2008
- 5.8 Unit Market Shares of Vendors - 1992-2008
- 5.9 Worldwide I-Line Market Shares - 2008
- 5.10 Worldwide 248nm Market Shares - 2008
- 5.11 Worldwide 193nm Dry Market Shares - 2008
- 5.12 Worldwide 193nm Wet Market Shares - 2008
- 5.13 Market Shares of Vendors (Revenues) - 2008
