新一代功率半導體：市場、材料、技術

新一代功率半導體：市場、材料、技術 是由出版商The Information Network在2011年11月所出版的。 這份英文市場調查報告書價格從美金2495起跳。

簡介

以矽為基礎的既存功率半導體在理論上來說接近界線、具有優越材料特性和大能隙的碳化矽(SiC)及氮化鎵(GaN)基礎的功率半導體為新一代能量設備的很大期待、在這之中IGBT和能量MOSFET、為市場擴大的原動力。功率半導體的市場規模、從2011年的142億美金擴大到2013年的167億美金、預計此年平均成長率為3.7％。此外新一代功率半導體市場會逐漸地成長、加工設備的業界也會受其恩惠、相對的矽基板上的GaN磊晶成長過程相關機器的廠商及覆晶業界專用設備的廠商也會有好的業績。

本報告書內容包括:新一代功率半導體市場為焦點、可回收功率及電氣汽車為首的用途及半導體市場的定位、今後的成長領域等詳細的分析、SiC及GaN所使用的新一代半導體製造技術及今後的課題、主要企業的介紹等、內容綱要摘記如下:

第1章 介紹

• 差別化因素的製造過程
• 與傳統MOS設備不同的積層結構設備
• 超級結合過程

第2章 功率半導體的用途

• 可回收能源領域的功率半導體
  • 太陽能發電
  • 風力發電
• 油水混合車／電氣汽車領域的功率半導體
  • 汽車業界的大流向
  • 差距大的設備
• LED照明領域的功率半導體
• 產業用馬達驅動設備領域的功率半導體
• 智慧型居家市場的功率半導體

第3章 市場分析

• 半導體市場的功率半導體的定位
• IGBT和能量MOSFET的潛在性成長性
• 最終用途市場
• 差距較大的功率半導體市場

第4章 新一代功率半導體

• 矽的制約克服的期待感
• 新一代基板的SiC和GaN的期待感
• 差距較大的半導體優點
• SiC和GaN的比較
  • 材料特性
  • 材料品質
  • SiC横型因素
  • GaN縱型因素
• SiC設備的結構
  • SiC的大量單結晶成長和外延成長
  • 表面處理
  • 蝕刻
  • 微影
  • 離子注入
  • 表面安定化
  • 金屬化
• GaN設備的製造
  • GaN的課題
    • 價格
    • 信賴性
    • 元件的包裝和熱的信賴性
    • 管理
    • 設備模式
  • 包裝

第5章 主要企業的介紹

• 功率半導體廠商
  • Infineon
  • 三菱電機
  • 東芝
  • STMicroelectronics
  • Vishay
  • International Rectifier
  • Fairchild
  • 富士電機
  • Renesas
  • Semikron
  • NXP Semiconductors
• SiC晶圓相關企業
• GaN晶圓相關企業
• 新一代功率半導體的開發所推動的企業介紹
  • 三菱電機
  • 富士電機Holdings
  • 東芝
  • Rohm
  • Sanken電氣
  • 新電元工業
  • Infineon
  • Microsemi
  • Cree
  • GeneSiC Semiconductor
  • Semisouth Laboratories
  • United Silicon Carbide
  • MicroGaN
  • Powerex
  • Fairchild
  • International Rectifier
  • Nitronix

圖表

目錄

New Tripoli, PA, November 15, 2011 . . . . Traditional silicon-based power semiconductors are reaching their theoretical limitations. Fortunately because of their superior material properties, wide-bandgap power semiconductor devices (SiC [silicon carbide] and GaN [gallium nitride]) can offer performances orders-of-magnitude better than silicon devices. As a result, they are widely expected to be the next generation power devices, according to a new report, Next-Generation Power Semiconductors: Markets Materials, Technologies recently published by The Information Network, a New Tripoli, PA market research company.

“The commercial battle for next-generation power semiconductors is evolving. As a result, many semiconductor manufacturers are attempting to enter the market”, - noted Dr. Robert Castellano, president of The Information Network. “Already it's a $50 million market, although small compared to the $14 billion silicon-based power semiconductor market”.

We see insulated-gate bipolar transistor (IGBT) and power metal-oxide-semiconductor field-effect transistor (MOSFET) as the main growth drivers. We project 3.7% average annual growth of the power semiconductor market over the next three years, from $14.2 billion in 2011 (+6% y-y) to $16.7 billion in 2013. We look for strongest growth from IGBTs, although power MOSFETs had the largest market share in 2010 due to its fast switching speed, near-perfect gate impedance, fast switching speed, excellent stability, and a relatively low on-state resistance.

Because of their attractive performances, wide-bandgap power semiconductor devices have been under intense R&D. In development since the early 1990s, SiC material for power device applications has gone through the longest period and come furthest in terms of maturity and reliability.

We project the next-generation power semiconductor will exhibit a compound annual growth rate of 72% between 2010 and 2015, reaching values of more than $500 million.

Benefiting from the growth of these wide-bandgap devices will be processing equipment. Significant improvements on the technique of growing GaN material on Si substrates have enabled high quality, crack-free GaN epi layers grown on Si, overcoming the 17% crystal mismatch between the two materials crystal faces. For GaN epitaxy on Si or SiC, Veeco and Aixtron will benefit and grow strongly, utilizing their expertise in LED epitaxy.

Silicon MOSFETs use wirebonding and traditional SO or TO packages. GaN on Silicon can be bonded using flip chip. Companies benefiting would be equipment suppliers to the flip chip industry, such as NeXX Systems.

Chapter 1 - Introduction

• 1.1. Manufacturing Processes Are Differentiation Factors
• 1.2. Vertical Structure Devices Differ From Usual MOS Planar Structure
• 1.3. Super Junction Processes

Chapter 2 - Applications of Power Semiconductors

• 2.1. Power Semiconductors in Renewable Energy
  • 2.1.1. Solar
  • 2.1.2. Wind
• 2.2. Power Semiconductors in Hybrid & Electric Vehicles
  • 2.2.1. Automotive Megatrends
  • 2.2.2. Wide Bandgap Devices for HEVs/EVs
• 2.3. Power Semiconductors in LED Lighting
• 2.4. Power Semiconductors in Industrial Motor Drives
• 2.5. Power Semiconductors in Smart Home Market

Chapter 3 - Market Analysis

• 3.1. Position of Power Semiconductors in Semiconductor Market
• 3.2. Growth Potential of IGBTs and Power MOSFETs
• 3.3. End Application Markets
• 3.4. Wide Bandgap Power Semiconductor Market

Chapter 4 - Next-Generation Power Semiconductors

• 4.1. Expectations for Overcoming Silicon's Limitations
• 4.2. Expectations Of SiC and GaN as Next-Generation Substrates
• 4.3. Benefits of Wide Band Gap Semiconductors
• 4.4. SiC versus GaN
  • 4.4.1. Material Properties
  • 4.4.2. Material Quality
  • 4.4.3. SiC Lateral Devices:
  • 4.4.4. SiC Vertical Devices
  • 4.4.5. GaN Lateral Devices
• 4.5. Fabrication of SiC devices
  • 4.5.1. Bulk and Epitaxial Growth of SiC
    • 4.5.1.1. Bulk Growth
    • 4.5.1.2. Epitaxial Growth
    • 4.5.1.3. Defects
  • 4.5.2. Surface Preparation
  • 4.5.3. Etching
  • 4.5.4. Lithography
  • 4.5.5. Ion Implantation
  • 4.5.6. Surface Passivation
  • 4.5.7. Metallization
• 4.6. Fabrication of GaN devices
  • 4.6.1. GaN Challenges
    • 4.6.1.1. Costs
    • 4.6.1.2. Reliability
    • 4.6.1.3. Component Packaging and Thermal Reliability
    • 4.6.1.4. Control
    • 4.6.1.5. Device Modeling
• 4.7. Packaging

Chapter 5 - Company Profiles

• 5.1. Power Semiconductor Companies
  • 5.1.1. Infineon
  • 5.1.2. Mitsubishi
  • 5.1.3. Toshiba
  • 5.1.4. STMicroelectronics
  • 5.1.5. Vishay
  • 5.1.6. International Rectifier
  • 5.1.7. Fairchild
  • 5.1.8. Fuji Electric
  • 5.1.9. Renesas
  • 5.1.10. Semikron
  • 5.1.11. NXP Semiconductors
• 5.2. SiC Wafer-Related Companies
• 5.3. GaN Wafer-Related Companies
• 5.4. Profiles of Companies with Next-Generation Activities
  • 5.4.1. Mitsubishi Electric
  • 5.4.2. Fuji Electric Holdings
  • 5.4.3. Toshiba
  • 5.4.4. Rohm
  • 5.4.5. Sanken Electric
  • 5.4.6. Shindengen Electric
  • 5.4.7. Infineon
  • 5.4.8. Microsemi
  • 5.4.9. Cree
  • 5.4.10. GeneSiC Semiconductor
  • 5.4.11. Semisouth Laboratories
  • 5.4.12. United Silicon Carbide
  • 5.4.13. MicroGaN
  • 5.4.14. Powerex
  • 5.4.15. Fairchild
  • 5.4.16. International Rectifier
  • 5.4.17. Nitronix

• 1.1. Evolution Of IGBT Chip Structure
• 1.2. Effects Of Miniaturization Of IGBT Chip
• 1.3. SiC Trench-Type MOSFET And Resistance Reduction As Compared With DMOSFET
• 1.4. Planar And Vertical (Trench) MOSFET
• 1.5. Schematic Of A FinFET
• 1.6. Schematic Of A MOSFET And Super Junction MOSFET
• 1.7. Process Flow For Super Junction MOSFET
• 2.1. Forecast Of Solar Power - 2000-2015
• 2.2. Full Bridge IGBT Topology
• 2.3. PV Inverter Market Distribution
• 2.4. Block Diagram Of Microcontroller-Based Inverter
• 2.5. Worldwide Wind Turbine Shipments 1995 - 2012
• 2.6. Wind Power As Percent Of Electricity - 2010
• 2.7. Bill Of Materials For A Typical 30-50kw Inverter
• 2.8. A Simple Diagram Of A HEV Traction Drive System.
• 2.9. A More Complex Diagram Of PEEM In A Plug-In Hybrid Electric Vehicle (PHEV)
• 2.10. Conducting And Switching Loses For Inverter
• 2.11. Unit Pricing Trends In Power Semiconductors
• 2.12. System And Component Costs For Wide Bandgap Semiconductors
• 2.13. Vertical And Lateral HEMY
• 2.14. GaN Lateral And GaN Vertical HEMTs In EVs
• 2.15. Market Drivers For LED Biz And Applications
• 2.16. SSL Vs. Classical Technologies
• 2.17. LED Performance Vs. Traditional Light Sources
• 2.18. Energy Production And Use Comparison
• 2.19. Typical LED Drive Circuit
• 2.20. Integration Of LED And LED Driver Using TSV
• 2.21. Simple Power MOSFET Motor Controller
• 2.22. Basic Operating Principle Of Inverter
• 2.23. System Block Diagram Of An Air Conditioner
• 3.1. Mitsubishi's IGBT (Insulated Gate Bipolar Transistor) Generations
• 3.2. Infineon's MOSFET Generations: 1990's, 1999, 2002, 2010
• 3.3. Intel's FinFET Design
• 3.4. Fuji's MOSFET versus Super Junction MOSFET
• 3.5. NEC's GaN-on-Si Power Transistor
• 3.6. Fujitsu's GaN-on-SiC HEMT Transistor
• 3.7. Power Semiconductor Market Forecast 2007-2013
• 3.8. Power Transistor Market Shares 2010
• 3.9. Power Diode Market Shares 2010
• 3.10. Worldwide IGBT Market Share 2010
• 3.11. Market Shares For Super Junction MOSFET 2010
• 3.12. SJ MOSFET s As An Interim Solution
• 3.13. Power Transistor Market Share By Application 2010
• 3.14. Power Discrete Market For Renewable Energy 2011-2014
• 3.15. Power Discrete Market Hybrid For and Electric Vehicles 2011-2014
• 3.16. Power Discrete Market For General LED Lighting 2011-2014
• 3.17. Power Discrete Market For Industrial Motor Control 2011-2014
• 3.18. Forecast of Widebandgap Semiconductor Market 2010-2015
• 4.1. Silicon-Based Devices Reaching Maturity
• 4.2. Enhancement Mode GaN On Si Transistor
• 4.3. AlGaN/GaN HEMT, GaN MOSFET, MOS-HEMT
• 4.4. GaN HEMT Material Structure On Si Substrate
• 4.5. Power Package Integration Roadmap

• 2.1. Product Families And The Principal End Uses Of Power Products
• 2.2. Advantages And Disadvantages Of GaN Lateral HEMTs
• 2.3. Light Source Comparison
• 3.1. Market Shares For Japanese Companies 2001-2010
• 4.1. Physical Properties Of Select Semiconductor Materials
• 4.2. Wide Bandgap Material Properties
• 4.3. Lattice Constant And CTE Of Semiconductor Starting Material
• 4.4. GaN FET Vs Si MOSFET Characteristics
• 4.5. Standard Chemical Solution For Surface Preparation Of SiC Substrates
• 4.6. Interface Trap Densities For 4H-SiC Under Different Process Conditions

Press Release

預測下一代電力半導體市場將爆炸性成長

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