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市場調查報告書

記憶體技術的變形:新技術帶來的新的市場機會及新問題

The Changing Face of Memory Technologies: New Technologies Drive New Opportunities - And Create New Problems

出版商 IDC 商品編碼 345136
出版日期 內容資訊 英文 26 Pages
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記憶體技術的變形:新技術帶來的新的市場機會及新問題 The Changing Face of Memory Technologies: New Technologies Drive New Opportunities - And Create New Problems
出版日期: 2016年05月06日 內容資訊: 英文 26 Pages
簡介

本報告提供主要系統OEM處理的各種的記憶體/儲存階層的選項相關驗證,現況與展望相關的系統性資訊。

IDC的見解

調查概要

概況

  • 現狀
    • 主流的DRAM部門:製造中顯著的改變
    • LPDDR記憶體:嶄露頭角
    • 堆疊記憶體:更智慧的DDR的選項
    • NAND:期待大,不過,NAND有獨有問題

未來展望

  • RAM的可能性擴大的新的全球
    • 阻力變化型RAM (RRAM,ReRAM)
    • 磁電阻式記憶體 (MRAM,T-MRAM,ST-MRAM,STT-MRAM,TAS-MRAM,VMRAM)
    • 相位改變RAM (PRAM,PCRAM)
    • 至少一個以上,改變局勢的可能性
    • 架構觀點的記憶體的新趨勢
      • 處理器層級的記憶體開發
      • 提高緩存的限制
      • SSD:替代旋轉型硬碟的氣勢

主要的建議

  • 快取
  • 變得更深的記憶體階層
  • 異種架構
  • 多重處理器
  • 並列編程的範例

參考資料

  • 相關資料
  • 摘要

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目錄
Product Code: US41212215

This IDC study reviews the different memory and storage options that are being explored by the major system OEMs. Myriad market and technology forces are aligning to bring about some drastic changes in almost every sector of the memory field, and these changes will have a deep and abiding impact on the way that high-performance computing (HPC) systems are designed, built, and used in the coming years. Developments of particular note include the emergence of low-power DRAMs as the dominant DRAM device, looming performance issues in NAND flash development, and the explosion of new architectures to address growing concerns with the continued scaling of electron-charged memory devices. In addition, new technologies such as embedded cache, burst buffers, and SSDs are expanding options for more sophisticated memory/storage hierarchies."The bulk of new or evolving memory/storage developments promise new opportunities for faster, more effective data storage and movement, but almost all carry with them some - and in more than a few cases, significant - design and use complexities," says Bob Sorensen, research VP, Technical Computing.

IDC Opinion

In This Study

Situation Overview

  • Current Status
    • The Mainstream DRAM Sector: A Sea Change in the Making
    • LPDDR Memory: Coming to the Fore
    • Stacked Memory: Options for Smarter DDRs
    • NAND - Lots of Promise, But It Has Issues of Its Own

Future Outlook

  • A New World of RAM Possibilities
    • Resistive RAM (RRAM, ReRAM)
    • Magnetoresistive RAM (MRAM, T-MRAM, ST-MRAM, STT-MRAM, TAS-MRAM, VMRAM)
    • Phase-Change RAM (PRAM, PCRAM, PCM)
    • … And At Least One Potential Game Changer
    • New Trends in Memory from an Architectural Perspective
      • Memory Developments at the Processor Level
      • Raising the Bar on Caching
      • SSD: Looking to Replace Spinning Disk

Essential Guidance

  • Cache
  • Deeper Memory Hierarchies
  • Heterogeneous Architectures
  • Multiprocessors
  • Parallel Programming Paradigms

Learn More

  • Related Research
  • Synopsis
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