3bit/Cell NAND快閃記憶體比較

Comparison of 3-bit per cell NAND Flash Memories

出版商	Forward Insights
出版日期	2009年08月	商品編碼	97634
內容資訊	英文 54 Pages
價格	US $ 3499 PDF by E-mail (Unlimited User License)

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3bit/Cell NAND快閃記憶體比較 是由出版商Forward Insights在2009年08月所出版的。這份英文市場調查報告書包含54 Pages 價格從美金3499起跳。

Luca Crippa is Senior Technical Analyst for Design Architecture. Luca has more than 10 years of experience in MLC flash memory design. Previously, he was Senior Designer for 48nm floating gate and 36nm floating gate NAND flash memories at Qimonda AG as well as 90nm and 60nm MLC NAND flash products at STMicroelectronics.

He was instrumental in the development of 64Mb, 128Mb and 256Mb MLC NOR flash products at STMicroelectronics and is the author/co-author of 20 U.S. patents and the book Memories in Wireless Systems (Springer-Verlag ed., 2008).

Luca received his Bachelors degree at ITIS G. Marconi, Dalmine, Italy in 1992 and a Masters degree in Electronic Engineering at the Politecnico of Milan in 1999. His thesis topic was Analog circuits design for Multilevel Flash Memory.

Contents
List of Figure
List of Tables
Executive Summary
Introduction
Three-bit per cell NAND Flash Memories
- SanDisk/Toshiba 56nm 16Gb 3-bit/cell NAND Flash Memory
  - Summary
  - Page Buffer
  - Page Organization
  - Cache algorithms
  - Source Line Bias Error Compensation
  - Power Routing Organization
  - Data Path
- All Bitline vs. Interleaved Architecture
  - Program Speed
  - ABL - Considerations on Scalability
- Hynix 48nm 32Gb 3-bit/cell NAND Flash Memory
  - Summary
  - Chip Architecture
  - Pass Bit Detector Circuits
  - Smart Blind Program Algorithm
  - Start Bias Controlled Program Algorithm
- 32Gb 32nm 3-bit/cell SanDisk/Toshiba
  - Summary
  - Chip Architecture
  - Program Verify Read Before Programming
  - Compact Row Decoder
  - Extended Column Architecture
- Samsung 51nm 16Gb 3-bit/cell NAND Flash Memory
  - Summary
- Summary
References
About the Author
About Forward Insights
- Services
- Contact
Report Offerings

List of Figures

Figure 1. NAND Flash Areal Storage Density Trend
Figure 2. ISPP for 2-bit and 3-bit per cell Technology
Figure 3. ABL architecture
Figure 4. Page Organization and Programming
Figure 5. Conventional Cache Program
Figure 6. FSC +MCR
Figure 7. Source line Bias Error: Ideal Case
Figure 8. Source line Bias Error: Real Case
Figure 9. Source line Bias Error: Source Tracking
Figure 10. Chip comparison
Figure 11. Power Bus Routing: 16Gb D2 vs. 16Gb x3 (rotated array)
Figure 12. Data Path: 16Gb D2 vs 16Gb x3 (rotated array)
Figure 13. Program speed improvements
Figure 14. ABL Architecture with 8K Page Size Compared to Interleaved Architecture with 4KB Page Size
Figure 15. ABL Architecture with 8K Page Size Compared to Interleaved Architecture with 8KB Page Size
Figure 16. ABL Architecture vs. Interleaved Architecture: Double Sided Page Buffer
Figure 17. BLC Line Density vs. Core Scalability
Figure 18. 3-bit/cell NAND Flash Program Time
Figure 19. Die micrograph of Hynix 32Gb 8LC NAND Flash Memory
Figure 20. Pass Bit Detector
Figure 21. Smart Blind Program
Figure 22. Start Bias Controlled Program
Figure 23. SanDisk/Toshiba 32nm 32Gb 3-bit/cell NAND Flash Die Micrograph
Figure 24. Program Inhibit
Figure 25. Schematic view of row decoder
Figure 26. String Organization
Figure 27. Endurance properties
Figure 28. Current Degradation due to Series Resistance

List of Tables

Table 1. Features Summary of SanDisk/Toshiba 56nm 16Gb 3-bit/cell NAND Flash Memory
Table 2. ABL vs. Interleaving
Table 3. Features Summary of Hynix 48nm 32Gb 3-bit/cell NAND Flash Memory
Table 4. Features Summary of SanDisk/Toshiba 32nm 32Gb 3-bit/cell NAND Flash Memory
Table 3. Features Summary of Samsung 51nm 16Gb 3-bit/cell NAND Flash Memory
Table 5. Key Parameters Comparison
Table 7. Key Features and Advantages & Disadvantages of SanDisk/Toshiba 56nm 16Gb 3- bit/cell NAND Flash Memory
Table 8. Key Features and Advantages & Disadvantages of Hynix 48nm 32Gb 3-bit/cell NAND Flash Memory
Table 9. Key Features and Advantages & Disadvantages of SanDisk/Toshiba 32nm 32Gb 3-bit/cell NAND Flash Memory
Table 10. Key Features and Advantages & Disadvantages of Samsung 51nm 16Gb 3-bit/cell NAND Flash Memory