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市場調查報告書

Ericsson的RU22 W-CDMA 850MHz模式:KRC 118 22/1 R1D/B

Ericsson RU22 W-CDMA 850MHz Model KRC 118 22/1 R1D/B

出版商 EJL Wireless Research
出版日期 2009年05月 商品編碼 89935
內容資訊 英文 59 Pages, 21 Tables, 37 Exhibits
價格
US $ 5000 PDF by E-mail (Single User License)
US $ 12500 PDF by Email, Enterprise use license (up to five users)


Ericsson的RU22 W-CDMA 850MHz模式:KRC 118 22/1 R1D/B 是由出版商EJL Wireless Research在2009年05月所出版的。 這份英文市場調查報告書包含59 Pages, 21 Tables, 37 Exhibits 價格從美金5000起跳。

簡介

本報告書內容包括:2006年第2季製造的Ericsson RBS3x06 WCDMA基地台平台的一部分 RU22 W-CDMA 850MHz無線電收發器設計分析。內容綱要摘記如下:

實施概要

  • 主動式/被動式元件摘要
  • 重要注記

第1章 RBS 3x0x 系統

  • Ericsson RBS 3000平台概要

第2章 機械性分析

  • 機械性分析

第3章 無線電收發器次級系統

  • Area A:無線電收發器基頻數位處理
  • Area B:無線電收發器電源管理
  • Area C:無線電收發器Tx部
  • Area D:無線電收發器Rx部
  • 63 PA7F17 合成器模組
  • 62 PA7F16 合成器模組
  • E268C 合成器模組
  • Area E:產生超強訊號
  • Area F:DPD用傳輸樣本路徑
  • Area G:輔助性PLL
  • Area H:六位反流器
  • Area I:RF Rx/序列連結器

第4章 電力增幅系統

  • Area J:電力增幅電源管理部
  • Area K:驅動增幅部
  • Area L:高出力增幅部
  • Area M:RF出力調整部

附錄A-被動式外殼尺寸分析

附錄B-主動式元件的市場佔有率

圖表

目錄

Abstract

This report covers the design analysis of an Ericsson RU22 WCDMA850MHz radio transceiver unit. This unit is part of the RBS3x06 WCDMA base station platform. The unit was manufactured in Q2 2006.

Component and semiconductor suppliers mentioned in this report include: Analog Devices, Anaren Microwave, Altera, Epcos AG, Fairchild Semiconductor, Ferroxcube, Freescale Semiconductor, Infineon Technologies, Integrated Device Technology, M/A-COM, Maxim Integrated Products, Murata Electronics Co., Ltd., National Semiconductor, NDK, NXP Semiconductors, RF Microdevices, STMicroelectronics, Texas Instruments, TriQuint Semiconductors and Vishay Semiconductors.

Features

  • Complete Part Number/Marking
  • Component Manufacturer Identification
  • Function Component Description
  • Package Type

Important Note: There is NO component pricing contained within the report.

Table of Contents

EXECUTIVE SUMMARY

  • Active/Passive Component Summary
  • Important Note:

CHAPTER 1: RBS 3X0X SYSTEM

  • 1.1 Overview of Ericsson RBS 3000 Platform

CHAPTER 2: MECHANICAL ANALYSIS

  • 2.1 Mechanical Analysis

CHAPTER 3: TRANSCEIVER SUBSYSTEM

  • Area A: Transceiver Baseband Digital Processing
  • Area B: Transceiver Power Management
  • Area C: Transceiver Tx Section
  • Area D: Transceiver Rx Section
  • 63 PA7F17 Synthesizer Module
  • 62 PA7F16 Synthesizer Module
  • E268C Synthesizer Module
  • Area E: Master Signal Generation
  • Area F: Transmit Sample Path for DPD
  • Area G: Secondary PLL
  • Area H: Hex Inverter
  • Area I: RF Rx/Serial Connectors

CHAPTER 4: POWER AMPLIFIER SYSTEM

  • Area J: Power Amplifier Power Management Section
  • Area K: Driver Amplifier Section
  • Area L: High Power Output Amplifier Section
  • Area M: RF Output Conditioning Section

APPENDIX A - PASSIVE CASE SIZE ANALYSIS

APPENDIX B - ACTIVE COMPONENT MARKET SHARE ANALYSIS

TABLES

  • Table 1: Area A Bill of Materials
  • Table 2: Area B Bill of Materials
  • Table 3: Area C Bill of Materials
  • Table 4: Area D1, D2 Bill of Materials
  • Table 5: 63 PA7F17 Bill of Materials
  • Table 6: 62 PA7F16 Bill of Materials
  • Table 7: E268C Bill of Materials
  • Table 8: Area E Bill of Materials
  • Table 9: Area F Bill of Materials
  • Table 10: Area G Bill of Materials
  • Table 11: Area H Bill of Materials
  • Table 12: Area I Bill of Materials
  • Table 13: Area J Bill of Materials
  • Table 14: Area K Bill of Materials
  • Table 15: Area L Bill of Materials
  • Table 16: Area M Bill of Materials
  • Table 17: Passive Component Case Size Distribution by System Subsection
  • Table 18: Identified Passive Component Supplier Distribution by System Subsection
  • Table 19: Active/Passive Component Distribution by System Subsection
  • Table 20: Active Semiconductor Vendor Distribution by System Subsection
  • Table 21: Active Semiconductor Vendor Distribution by System Subsection (con' t)

EXHIBITS

  • Exhibit 1: Generic First Generation W-CDMA Base Station Diagram
  • Exhibit 2: RU22 Front and Rear View
  • Exhibit 3: RU22 RF Shield External View
  • Exhibit 4: RU22 RF Shield Internal View
  • Exhibit 5: RU22 Chassis, Internal View, TRx Side
  • Exhibit 6: RU22 Chassis, Internal View, Power Amplifier Side
  • Exhibit 7: RU22 Heat Sink Mechanical Dimensions, Side View
  • Exhibit 8: RU22 Heat Sink, Top View
  • Exhibit 9: RU22 Heat Sink, Bottom View
  • Exhibit 10: RU22 Transceiver System Printed Circuit Board (Top View)
  • Exhibit 11: RU22 Transceiver System Printed Circuit Board (Bottom View)
  • Exhibit 12: RU22 System Level Block Diagram
  • Exhibit 13: Area A Component Diagram
  • Exhibit 14: Area B Component Diagram
  • Exhibit 15: Area C Component Diagram
  • Exhibit 16: Rx Section Block Diagram
  • Exhibit 17: Area D2 Component Diagram
  • Exhibit 18: 63 PA7F17 Component Diagram
  • Exhibit 19: 62 PA7F16 Component Diagram
  • Exhibit 20: E268C Bill of Materials
  • Exhibit 21: Area E Component Diagram
  • Exhibit 22: Area F Component Diagram
  • Exhibit 23: Area G Component Diagram
  • Exhibit 24: Area H Component Diagram
  • Exhibit 25: Area I Component Diagram
  • Exhibit 26: RU22 Power Amplifier System Printed Circuit Board (Top View)
  • Exhibit 27: RU22 Power Amplifier System Printed Circuit Board (Bottom View)
  • Exhibit 28: RU22 Tx Chain Block Diagram
  • Exhibit 29: Area J Component Diagram
  • Exhibit 30: Area K Component Diagram
  • Exhibit 31: Area L Component Diagram
  • Exhibit 32: Area M Component Diagram
  • Exhibit 33: Passive Component Case Size Distribution
  • Exhibit 34: Identified Passive Component Market Share by Vendor
  • Exhibit 35: Active Semiconductor Component Share
  • Exhibit 36: Active Semiconductor Market Share by Vendor
  • Exhibit 37: High Pin Count (64+) Active Semiconductor Market Share by Vendor
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