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市場調查報告書
氧化物TFT（薄膜轉換器）：技術與發展狀況
Oxide Thin Film Transistor Technology & Development Status
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氧化物TFT（薄膜轉換器）：技術與發展狀況 是由出版商DisplayBank在2011年07月所出版的。
這份英文市場調查報告書價格從美金6500起跳。
做為各種顯示器面板的背板電源設備的氧化物薄膜轉換器（TFT）的潛在性與實用性被廣泛認識、韓國以及日本顯示器面板各大企業開始研發投資以大量生產。氧化物TFT有一天會加入LCD、AMOLED、電子紙市場吧。
本報告書為氧化物TFT（薄膜轉換器）技術的開發動向之相關調査分析、氧化物TFT各種特性、構造與製造程序、應用、主要製造商之開發狀況、氧化物TFT的主要課題等，概述如下。
第1章 概要
第2章 氧化物TFT的特性
- 氧化物TFT：概要
- 氧化物TFT：開發動向
- 氧化物半導體構造特性
- 氧化物半導體原子構造與能源帶
- 氧化物半導體的欠缺特性
- 氧化物半導體的電氣特性
- 氧化物半導體與絕緣膜中所尋求的特性與類別
- 氧化物半導體中所尋求的特性與類別
- 絕緣膜中所尋求的特性與類別
第3章 氧化物TFT的製造程序與構造
- TFT構造
- 氧化物TFT動作原理
- 氧化物TFT內容
- 氧化物TFT的製造程序
- 下閘極・上接觸
- 下閘極・下接觸
- 上閘極・上接觸
- 上閘極・下接觸
- 自我整合
第4章 氧化物TFT的應用
- LCD背板
- OLED背板
- 電子紙背板
- 感測裝製
- 記憶裝製
- 氧化物TFT基礎的回路
第5章 氧化物TFT的開發狀況：依製造商
- 材料企業狀況
- 設備企業狀況
- 設備企業狀況
- 韓國
- LG Display
- SMD
- Samsung Electronics
- Electronics and Telecommunications Research Institute
- 日本
- 半導體能源研究所
- Sharp
- SONY
- 凸版
- 東芝
- 台灣
- 美國
第6章 氧化物TFT的主要課題
第7章 總論
第8章 目錄
Abstract
Oxide TFT is not only possible to implement large-area and high-resolution,
but also can be applied to no-glasses 3D TV, and Oxide materials can be
processed at room temperature, so implementing flexible display that utilizes
a plastic substrate can be done. It is also getting a lot of attention as
next-transistor that can be applied to next-generation display with clarity
advantage.
Oxide TFT is fully recognized for its potential and practical technology as
backplane power devices of various display panels, research and development
investments are made in display panel major companies in Korea and Japan with
the mass production in mind, so sooner or later, Oxide TFT is expected to
appear on the LCD, AMOLED, and e-paper market.
Displaybank has issued a report on technology status and related companies'
development trends of the attention-attracting in the industry, Oxide TFT.
Oxide TFT Applications:
- TFT-LCD(3D TV, Smart TV, UD TV)
- Flexible Display
- 6.5 inch Flexible AMOLED(SMD)
About Displaybank
Displaybank is a global authority in market research and consulting for the
Display Industry
Founded in 1999, Displaybank is the world' s prestigious professional
research/consulting group.
Table of Contents
Chapter 1. Overview
- 1.1. Research Background
- 1.2. Research Methodology
Chapter 2. Oxide TFT Property
- 2.1. Oxide TFT Overview
- 2.2. Oxide TFT Development Trend
- 2.3. Structural Property of Oxide Semiconductor
- 2.3.1. Atomic Structure and Energy Band of Oxide Semiconductor
- 2.3.2. Defect Property of Oxide Semiconductor
- 2.4. Electrical Property of Oxide Semiconductor
- 2.4.1. Conductive Property of Oxide Semiconductor
- 2.4.2. Doping Property of Oxide Semiconductor
- 2.5. Oxide Semiconductor and dielectric Film Required Property and Type
- 2.5.1. Required Property and Type of Oxide Semiconductor
- 2.5.2. Required Property and Type of dielectric Film
Chapter 3. Manufacturing Process and Structure of Oxide TFT
- 3.1. Structure of TFT
- 3.1.1. Structure of General TFT
- 3.1.2. Structure of Oxide TFT
- 3.2. Operation Principle of Oxide TFT
- 3.3. Property of Oxide TFT
- 3.4. Oxide TFT Manufacturing Process
- 3.4.1. bottom gate top contact
- 3.4.2. bottom gate bottom contact
- 3.4.3. Top gate top contact
- 3.4.4. Top gate bottom contact
- 3.4.5. Self aligned
Chapter 4. Application of Oxide TFT
- 4.1. LCD Backplane
- 4.2. OLED Backplane
- 4.3. E-paper Backplane
- 4.4. Sensor Device
- 4.5. Memory Device
- 4.6. Oxide TFT-based Circuit
Chapter 5. Development Status of Oxide TFT by Maker
- 5.1. Material Companies Status
- 5.1.1. Korea
- 5.1.2. Japan
- 5.2. Equipment Companies Status
- 5.3. Device Companies Status
- 5.2.1. Korea
- 5.2.2.1. LG Display
- 5.2.2.2. SMD
- 5.2.2.3. Samsung Electronics
- 5.2.2.4. Electronics and Telecommunications Research Institute
- 5.2.2. Japan
- 5.2.2.1. SEL
- 5.2.2.2. Sharp
- 5.2.2.3. Sony
- 5.2.2.4. Toppan
- 5.2.2.5. Toshiba
- 5.2.3. Taiwan
- 5.2.4. The United States
- 5.2.4.1. CBRITE
- 5.2.4.2. HP
Chapter 6. Key Issues of Oxide TFT
- 6.1. Panel Manufacturing Process
- 6.1.1. Low Mask Structure Development
- 6.2.2. Low Resistance Wiring Problem
- 6.2. Device Reliability
- 6.3. New Materials and Process
Chapter 7. Conclusion
Chapter 8. Index
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