半導體的介電質與基板：技術及全球市場 是由出版商BCC Research在2009年11月所出版的。
這份英文市場調查報告書包含150 pages 價格從美金4850起跳。
本報告書內容包括：全球半導體用介電質與基板的概要、成本/技術要件、有關組裝程序的統合之課題分析。並提供主要的晶片製造廠、材料供應商、設備製造廠的簡介，內容綱要摘記如下：
第1章 介紹
第2章 摘要
第3章 概要
- 最先端的基板與介電質
- 終端使用者應用介紹
- 半導體的化學性質
- 半導體的機械構造
- 電子元件的製造程序
- 介電質
- 基板
第4章 介電質及基板之課題與新的手段
- 介電質
- 二氧化矽的市場狀況
- 課題
- 介電質的意含
- High-k/Low-k介電質
- 基板
第5章 介電質及基板的供應鏈
- 相關企業的分類
- 原材料業者
- 主要半導體企業
- 鑄造廠
- 無晶圓廠企業
- OEM及EMS
- 地區力學
- 循環
- 主要企業的活動狀況
第6章 專利分析
- 介紹
- 功能分類別的動向
- 年別的動向
- 國別的動向
- 受讓人別的動向
Abstract
Highlights
THIS REPORT:
- Provides a comprehensive overview of the global market for dielectrics and
substrates in semiconductors
- Covers low- and ultra-low-k solutions, including porous and nonporous,
organic and inorganic compounds for interlayer and intermetal applications
- Discusses high-k candidates, ranging from nitrided silicon oxide through
simple metal and rareearth oxides to ferroelectric materials for gate
dielectric and super-dense gigabit memory devices
- Analyzes the cost- and technology-based requirements and the challenge of
integration into fabrication processes
- Includes North American and global forecasts for materials by type and
region
- Offers company profiles of major chipmakers
Scope & Analyst
INTRODUCTION
Dielectrics and substrates are the two entities in which the sophistication of
software-based circuit design meets the plain reality of hardware properties
and limitations. For years, silicon and its derivatives have admirably handled
dual roles, allowing unprecedented advances in hardware features in areas such
as speed of operations, form factor, and power consumption in addition to
setting and maintaining a trail-blazing pace of successive advances. Doped
silicon has been the preferred material and silicon dioxide has been the
preferred dielectric. Along with polysilicon, the purest form of silicon,
which performs the function of a conducting metal, the metal (polysilicon),
oxide insulator (silicon dioxide), and semiconductor substrate (doped silicon)
troika has simplified the question of maximizing yields while maintaining high
levels of seamlessness in mainstream electronic devices. The metal oxide
semiconductor (MOS) paradigm is almost synonymous with silicon. The troika is
under increased pressure due to the challenges posed by 45-nm and beyond
dimensioned nodes, wherein the physical properties of the silicon family are
no longer able to cope with the resultant exacting demands. This report
examines these challenges and evaluates possible alternative materials. We
would like to clarify that the substrates and dielectrics covered in this
report are the ones that are used at the wafer level and not the packaging
level.
STUDY GOALS AND OBJECTIVES
This study has the following goals and objectives:
- Forecasting the market size for overall semiconductor dielectrics
- Forecasting the market size for overall semiconductor substrates
- Breaking down the overall semiconductor dielectrics market on the basis of
materials employed: silicon dioxide, low-k, and high-k
- Breaking down the overall semiconductor substrates market on the basis of
materials employed: silicon, gallium arsenide, gallium nitride, indium
phosphide, sapphire, silicon carbide, and germanium
- Breaking down the individual dielectric material type market along
end-user applications and geographical regions
- Breaking down the individual substrate material type market along end-user
applications and geographical regions
- Analyzing the historical benefits and impending challenges in the usage of
silicon dioxide as a dielectric
- Analyzing the historical benefits and impending challenges in the usage of
silica dioxide as a dielectric
- Enlisting the benefits, progress made, stakeholders involved and prospects
associated with individual high-k and low-k dielectric materials
- Enlisting the benefits, progress made, stakeholders involved, and
prospects associated with individual alternative substrate materials
- Discussing the methodologies involved in deposition of high-k and low-k
dielectrics
- Discussing the historical domains associated with individual alternative
substrate materials
- Analyzing the stakeholder value chain for dielectrics and substrates
- Analyzing the patenting activity involving high-k and low-k dielectrics as
well as alternative substrates
REASONS FOR DOING THE STUDY
The remarkable achievements obtained with silicon in the electronics domains
clearly have limitations, which are closely tied to the material properties of
silicon. Ironically, the drivers of electronic devices evolution have
highlighted the limitations of silicon.
- The ever-increasing hunger for speed and bandwidth has now engulfed the
wireless domain in addition to its traditional hold in the wireline domain.
Frequency of operations is closely related to heat dissipated as every
operational cycle results in release of energy because of state transition.
The operational frequency supported by a particular medium is the function of
the medium' s electron mobility. On the substrate front, the band gap
parameters of silicon limit the electron mobility, making it unsuitable for
high-frequency operations.
- The scenario on the dielectric fronts is even trickier. Dielectrics are
supposed to perform the function of providing capacitive coupling at
semiconductor gates and providing insulation along interlayer interconnects.
Miniaturization leading to compression in nodal distances has reduced the
thickness of these dielectrics. This leads to leakage of electrons and loss of
capacitive coupling and insulation. Industry experts have devised a
two-pronged strategy of tackling this issue: Increase the capacitance at the
gate level (high-k dielectric) and reduce it at the interlayer level (low-k
dielectric). Naturally, a single material cannot exhibit dual characteristics;
hence, the search is on for finding effective replacements for silicon dioxide
on both these fronts.
- It is not as if dielectrics and substrates can be altered in isolation.
There is a very close coupling between these two elements. Dielectrics are
grown on the substrate. Consequently, there has to be compatibility between
them in order to ensure smooth interfaces, patterning of nanoscale features,
and consistency in thermal, mechanical, and electrical properties. Any change
in dielectrics, therefore, will prompt a corresponding change in substrate and
vice versa.
It is widely believed that any change in the dielectric and substrate
materials will have far-reaching impact on the overall electronic device value
chain. However, it is not as if these alternative materials will get rid of
silicon and its derivatives altogether. Thus, the industry has to tackle the
most pressing design concern of interfacing all these materials with the
existing silicon and its derivatives. This is the single most pressing
impediment to the introduction of alternative materials.
This reports aims at exploring the key alternative materials and forecasting
their acceptance levels in the core semiconductor domain.
SCOPE OF THE REPORT
The report forecasts the size of the semiconductor dielectrics and substrates
mainstream and alternative material market from 2009 through 2014. The
executive summary provides a snapshot of key findings of the report. The
section on the state of the art in dielectrics and substrates sets the ground
for further discussion by identifying the position for dielectrics and
substrates in semiconductor product engineering. It then defines dielectrics
and substrates and enlists their key functions and areas of applications. It
details the characteristics of mainstream dielectric and substrate materials
- silicon dioxide and silicon, respectively.
The section on challenges and new approaches in dielectrics and substrates
enlists and analyzes the challenges confronting silicon dioxide and silica in
the continuing enhancement of speed, form-factor economy and power-consumption
efficiency witnessed by semiconductor devices. It then proposes alternative
materials, the reasons that make them attractive and the challenges
confronting their complete integration with the mainstream CMOS processes. The
section on stakeholders explains the criterion for classification of
stakeholders - material suppliers in case of dielectrics and wafer suppliers
in case of substrates in both mainstream and alternative material categories,
foundry owners, and original equipment manufacturer (OEMs). It also provides
the latest information on the dielectric- and substrate-related initiatives of
key companies in each category.
The U.S. Patent Analysis section highlights the patenting activity underway in
the area of dielectric and substrates. The section classifies the patents
awarded according to the activities involved in the synthesis of high- and
low-k dielectrics as well as alternative substrates. It also provides a
geographic and distribution by company of these patents. The report is
punctuated with numerical findings and projections that substantiate and drive
the theoretical discussion.
INTENDED AUDIENCE
The report will be relevant to the following stakeholders:
- Dielectric material suppliers, which are mainly chemical producers in
assessing the size of the electronic device market for the various materials
supplied by them
- Substrate wafer suppliers for determining the future of mainstream silicon
substrate wafer market as well as the market for alternative compound
semiconductors as well as germanium
- Semiconductor specialists in devising a comparative analysis of
alternative materials and the state of the art in their synthesis into the
mainstream manufacturing processes
- OEMs for evaluating their pros and cons of semiconductor integrated
circuits (ICs) based on mainstream and alternative material.
METHODOLOGY AND INFORMATION SOURCES
The report forecasts the market size for the following:
- Mainstream dielectric: Silicon dioxide
- Alternative dielectric: High-k and Low-k
- Mainstream substrate: Silicon
- Alternative substrate: Gallium arsenide, gallium nitride, indium
phosphide, silicon carbide, sapphire, germanium
The following metrics are forecast:
- Value in millions of dollars
- Volume in kg million for dielectrics and million square inch (MSI) for
substrates
- Market by end-application categories such as telecommunications,
Computing, consumer electronics, industrial, scientific, and others
- Market by geographical regions such as the Americas, Europe, the Middle
East and Africa (EMEA), and Asia Pacific (APAC)
- Both primary and secondary research methodologies were used in this study.
Industry experts were interviewed; secondary sources included industry
consortia, individual company financial statements, published opinions, and
other published sources.
Table of Contents
Chapter- 1: INTRODUCTION -- Complimentary 6
- STUDY GOALS AND OBJECTIVES 1
- REASONS FOR DOING THE STUDY 2
- SCOPE OF THE REPORT 3
- INTENDED AUDIENCE 4
- METHODOLOGY AND INFORMATION SOURCES 4
- ABOUT THE AUTHOR 5
- BCC ONLINE SERVICES 5
- DISCLAIMER 6
Chapter-2: SUMMARY 4
- THE STATE OF THE ART IN SUBSTRATES AND DIELECTRICS 11
- TABLE 1 GLOBAL MARKET FOR DIELECTRICS AND SUBSTRATES TO SEMICONDUCTOR
FOUNDRIES AND IDMS, BY VOLUME, THROUGH 2014 (KG MILLIONS /MSI) 12
- INTRODUCTION TO END-USE APPLICATION MARKETS 12
- TELECOMMUNICATIONS DEVICES 12
- COMPUTING DEVICES 12
- CONSUMER ELECTRONIC DEVICES 13
- INDUSTRIAL, SCIENTIFIC, AND OTHER DEVICES 13
- TABLE 2 GLOBAL DIELECTRICS AND SUBSTRATES MARKET BY END-USE APPLICATION,
THROUGH 2014 ($ MILLIONS) 13
- TABLE 3 GLOBAL DIELECTRICS AND SUBSTRATES MARKET BY GEOGRAPHICAL REGION,
THROUGH 2014 ($ MILLIONS) 14
- THE CHEMISTRY OF SEMICONDUCTORS 14
- SEMICONDUCTORS AND THE PERIODIC TABLE 14
- THE CARBON FAMILY 15
- What Makes Semiconductors Different? 15
- Silicon and Other Semiconductors 16
- THE TITANIUM FAMILY 16
- THE BORON FAMILY 17
- SOME IMPORTANT DEFINITIONS 17
- GATE DEFINITION METHODOLOGY 17
- Transistor-Transistor Logic (TTL) 17
- CMOS 18
- Field Effect Transistor (FET) 18
- MISFET/MOSFET 18
- BiCMOS 18
- Metal Semiconductor Field Effect Transistor (MESFET) 19
- High Electron Mobility Transistor (HEMT) 19
- Hetero-Junction Bipolar Transistor (HBT) 19
- FABRICATION PROCESSES 19
- Rapid Thermal Processing (RTP) 20
- Chemical Mechanical Planarization (CMP) 20
- Damascening 20
- OTHER ALLIED DEFINTIONS 20
- Double Data Rate (DDR)-Synchronous Dynamic Random Access Memory (SDRAM) 20
- Design for Manufacturability (DFM) 21
- Design for Test (DFT) 21
- Dynamic Random Access Memory (DRAM) 21
- Design Rule Check (DRC) 21
- Electronic Design Automation (EDA) 21
- International Technology Roadmap for Semiconductors (ITRS) 22
- THE MECHANICS OF SEMICONDUCTORS 23
- ELECTRONIC DEVICE MANUFACTURING PROCESS 23
- FIGURE 1 ELECTRONIC DEVICE MANUFACTURING PROCESS FLOW 24
- ELECTRONIC DEVICE MANUFACTURING ...CONTINUED/ 25
- DIELECTRICS 26
- MARKET METRICS 26
- TABLE 4 GLOBAL DIELECTRICS MARKET BY END-USE APPLICATION, THROUGH 2014 ($
MILLIONS) 26
- FIGURE 2 GLOBAL DIELECTRICS MARKET BY END-USE APPLICATION, 2007-2014 ($
MILLIONS) 27
- TABLE 5 GLOBAL MARKET VOLUME FOR DIELECTRICS BY END-USE APPLICATION,
THROUGH 2014 (KG MILLIONS) 27
- TABLE 6 GLOBAL DIELECTRICS MARKET BY GEOGRAPHICAL REGION, THROUGH 2014 ($
MILLIONS) 28
- FIGURE 2 GLOBAL DIELECTRICS MARKET BY GEOGRAPHICAL REGION, 2007-2014 ($
MILLIONS) 28
- TABLE 7 GLOBAL MARKET VOLUME FOR DIELECTRICS BY GEOGRAPHICAL REGION,
THROUGH 2014 (KG MILLIONS) 29
- DEFINITION AND OPERATING PRINCIPLES 29
- Definition and Operating Principles (Continued) 30
- USE CASES IN SEMICONDUCTOR MANUFACTURING 31
- Interconnects 31
- Gates 31
- Memory 32
- PREVALENT DOMINANT METHODOLOGY 32
- SUBSTRATES 33
- MARKET METRICS 33
- TABLE 8 GLOBAL SUBSTRATES MARKET BY END-USE APPLICATION, THROUGH 2014 ($
MILLIONS) 34
- FIGURE 3 GLOBAL SUBSTRATES MARKET BY END-USE APPLICATION, 2007-2014 ($
MILLIONS) 34
- TABLE 9 GLOBAL MARKET VOLUME OF SUBSTRATES BY END-USE APPLICATION, THROUGH
2014 (MSI) 35
- TABLE 10 GLOBAL SUBSTRATES MARKET BY GEOGRAPHICAL REGION, THROUGH 2014 ($
MILLIONS) 35
- FIGURE 4 GLOBAL SUBSTRATES MARKET BY GEOGRAPHICAL REGION, 2007-2014 ($
MILLIONS) 36
- TABLE 11 GLOBAL MARKET VOLUME OF SUBSTRATES BY GEOGRAPHICAL REGION,
THROUGH 2014 (MSI) 36
- DEFINITIONS AND OPERATING PRINCIPLES 37
- Clarification on Packaging Substrates 37
- USE CASES IN SEMICONDUCTOR MANUFACTURING 38
- The Dielectric-Substrate Interplay in SOI 39
- The Dielectric-Substrate ... (Continued) 40
- PREVALENT DOMINANT METHODOLOGY 41
- Revisiting Wafers 41
- Revisiting Wafers (Continued) 42
- Revisiting Wafers (Continued) 43
Chapter-3: OVERVIEW 33
Chapter-4: CHALLENGES AND NEW APPROACHES IN DIELECTRICS AND SUBSTRATES 44
- RAW MATERIAL PROVIDERS 88
- Roles 88
- Drivers 88
- Challenges 89
- Initiatives 89
- SEMICONDUCTOR MAJORS 89
- Roles 89
- Drivers 89
- Challenges 89
- Initiatives 90
- FOUNDRY OWNERS 90
- Roles 90
- Drivers 90
- Challenges 90
- Challenges (Continued) 91
- Initiatives 92
- FABLESS PLAYERS 92
- Roles 92
- Drivers 92
- Challenges 92
- Initiatives 93
- OEMS AND ENGINEERING MANUFACTURING SERVICE (EMS) PROVIDERS 93
- REGIONAL DYNAMICS 93
- REGIONAL BACKGROUND 93
- SALIENT FEATURES OF METRICS 94
- REGIONAL DISTRIBUTION METRICS 94
- TABLE 42 GLOBAL MARKET SHARE OF ALTERNATIVE SUBSTRATE MATERIALS, 2007 -
2014 (%) 95
- TABLE 43 GLOBAL MARKET VOLUME SHARE OF ALTERNATIVE SUBSTRATE MATERIALS,
2007 - 2014 (%) 95
- TABLE 44 GLOBAL SILICON DIOXIDE MARKET BY GEOGRAPHICAL REGION, THROUGH
2014 ($ MILLIONS) 96
- TABLE 45 GLOBAL MARKET VOLUME OF SILICON DIOXIDE BY GEOGRAPHICAL REGION,
THROUGH 2014 (KG MILLIONS) 97
- TABLE 46 GLOBAL HIGH-K DIELECTRICS MARKET BY GEOGRAPHICAL REGION, THROUGH
2014 ($ MILLIONS) 97
- TABLE 47 GLOBAL MARKET VOLUME OF HIGH-K DIELECTRICS BY GEOGRAPHICAL
REGION, THROUGH 2014 (KG MILLIONS) 98
- TABLE 48 GLOBAL LOW-K DIELECTRICS MARKET BY GEOGRAPHICAL REGION, THROUGH
2014 ($ MILLIONS) 99
- TABLE 49 GLOBAL MARKET VOLUME OF LOW-K DIELECTRICS BY GEOGRAPHICAL REGION,
THROUGH 2014 (KG MILLIONS) 99
- TABLE 50 GLOBAL SILICON MARKET BY GEOGRAPHICAL REGION, THROUGH 2014 ($
MILLIONS) 100
- TABLE 51 GLOBAL MARKET VOLUME OF SILICON BY GEOGRAPHICAL REGION, THROUGH
2014 (MSI) 101
- TABLE 52 GLOBAL GALLIUM ARSENIDE MARKET BY GEOGRAPHICAL REGION, THROUGH
2014 ($ MILLIONS) 101
- TABLE 53 GLOBAL MARKET VOLUME OF GALLIUM ARSENIDE BY GEOGRAPHICAL REGION,
THROUGH 2014 (MSI) 102
- TABLE 54 GLOBAL GALLIUM NITRIDE MARKET BY GEOGRAPHICAL REGION, THROUGH
2014 ($ MILLIONS) 103
- TABLE 55 GLOBAL MARKET VOLUME OF GALLIUM NITRIDE BY GEOGRAPHICAL REGION,
THROUGH 2014 (MSI) 103
- TABLE 56 GLOBAL INDIUM PHOSPHIDE MARKET BY GEOGRAPHICAL REGION, THROUGH
2014 ($ MILLIONS) 104
- TABLE 57 GLOBAL MARKET VOLUME OF INDIUM PHOSPHIDE BY GEOGRAPHICAL REGION,
THROUGH 2014 (MSI) 105
- TABLE 58 GLOBAL SILICON CARBIDE MARKET BY GEOGRAPHICAL REGION, THROUGH
2014 ($ MILLIONS) 105
- TABLE 59 GLOBAL MARKET VOLUME OF SILICON CARBIDE BY GEOGRAPHICAL REGION,
THROUGH 2014 (MSI) 106
- TABLE 60 GLOBAL SAPPHIRE MARKET BY GEOGRAPHICAL REGION, THROUGH 2014 ($
MILLIONS) 107
- TABLE 61 GLOBAL MARKET VOLUME OF SAPPHIRE BY GEOGRAPHICAL REGION, THROUGH
2014 (MSI) 107
- TABLE 62 GLOBAL GERMANIUM MARKET BY GEOGRAPHICAL REGION, THROUGH 2014 ($
MILLIONS) 108
- TABLE 63 GLOBAL MARKET VOLUME OF GERMANIUM BY GEOGRAPHICAL REGION, THROUGH
2014 (MSI) 109
- CYCLICALITY 109
- KEY COMPANY ACTIVITY SUMMARY 109
- AMD 109
- General Background 110
- Initiatives Related to Dielectrics 110
- Initiatives Related to Substrates 111
- Outlook and Analysis 111
- AMERICAN ELEMENTS 111
- General Background 111
- Initiatives Related to Dielectrics 112
- Initiatives Related to Substrates 112
- Outlook and Analysis 112
- ANADIGICS 113
- General Background 113
- Initiatives Related to Substrates 113
- Outlook and Analysis 114
- APPLIED MATERIALS 114
- General Background 114
- Initiatives Related to Dielectrics 114
- Initiatives Related to Substrates 115
- Outlook and Analysis 115
- ASML 115
- General Background 115
- Initiatives Related to Substrates 115
- Outlook and Analysis 116
- CHARTERED SEMICONDUCTOR 116
- General Background 116
- Initiatives Related to Dielectrics 116
- Initiatives Related to Substrates 117
- Outlook and Analysis 117
- DOW CHEMICAL 117
- General Background 117
- Initiatives Related to Dielectrics 118
- Outlook and Analysis 118
- DOW CORNING 118
- General Background 118
- Initiatives Related to Dielectrics 119
- Outlook and Analysis 119
- FUJITSU MICROELECTRONICS 119
- General Background 120
- Initiatives Related to Dielectrics 120
- Initiatives Related to Substrates 120
- Outlook and Analysis 120
- IBM 121
- General Background 121
- Initiatives Related to Dielectrics 121
- Initiatives Related to Substrates 122
- Outlook and Analysis 122
- INTEL 122
- General Background 122
- Initiatives Related to Dielectrics 122
- Outlook and Analysis 123
- LSI LOGIC 123
- General Background 123
- Initiatives Related to Dielectrics 123
- Outlook and Analysis 123
- MEMC ELECTRONIC MATERIALS 124
- General Background 124
- Initiatives Related to Substrates 124
- Outlook and Analysis 124
- NEC ELECTRONICS 124
- General Background 125
- Initiatives Related to Dielectrics 125
- Outlook and Analysis 125
- NEWWAY SEMICONDUCTOR 125
- General Background 125
- Initiatives Related to Substrates 126
- Outlook and Analysis 126
- SAMSUNG ELECTRONICS 126
- General Background 126
- Initiatives Related to Dielectrics 126
- Initiatives Related to Substrates 127
- Outlook and Analysis 127
- SHIN ETSU CHEMICAL CO., LTD. 127
- General Background 127
- Initiatives Related to Dielectrics 128
- Initiatives Related to Substrates 128
- Outlook and Analysis 128
- SILICON SENSE 128
- General Background 128
- Initiatives Related to Substrates 128
- Outlook and Analysis 129
- SILTRONIC 129
- General Background 129
- Initiatives Related to Substrates 129
- Outlook and Analysis 130
- ST MICROELECTRONICS 130
- General Background 130
- Initiatives Related to Dielectrics 130
- Initiatives Related to Substrates 130
- Outlook and Analysis 130
- STANFORD MATERIALS 131
- General Background 131
- Initiatives Related to Dielectrics 131
- Initiatives Related to Substrates 131
- Outlook and Analysis 131
- SUMITOMO METAL INDUSTRIES LTD./SUMCO 132
- General Background 132
- Initiatives Related to Substrates 132
- Outlook and Analysis 132
- TEXAS INSTRUMENTS 133
- General Background 133
- Initiatives Related to Dielectrics 133
- Outlook and Analysis 134
- TOSHIBA 134
- General Background 134
- Initiatives Related to Dielectrics 135
- Initiatives Related to Substrates 135
- Outlook and Analysis 136
- TAIWAN SEMICONDUCTOR MANUFACTURING CO. (TSMC) 136
- General Background 136
- Initiatives Related to Dielectrics 136
- Initiatives Related to Substrates 137
- Outlook and Analysis 137
- UMC 137
- General Background 137
- Initiatives Related to Dielectrics 138
- Initiatives Related to Substrates 138
- Outlook and Analysis 138
Chapter-5: DIELECTRICS AND SUBSTRATES SUPPLY CHAIN ANALYSIS 51
Chapter-6: U.S. PATENT ANALYSIS 12
- INTRODUCTION 139
- TRENDS BY FUNCTIONAL CATEGORIES 140
- TRENDS BY FUNCTIONAL CATEGORIES (CONTINUED) 141
- TRENDS BY FUNCTIONAL CATEGORIES (CONTINUED) 142
- TABLE 64 NUMBER OF U.S. PATENTS IN ALTERNATIVE DIELECTRICS AND SUBSTRATES
BY CATEGORY, 1976 - SEPTEMBER 2009 143
- TABLE 64 (CONTINUED) 144
- TRENDS BY YEAR 144
- TABLE 65 U.S. PATENT TRENDS IN ALTERNATIVE DIELECTRICS AND SUBSTRATES BY
YEAR OF GRANT, 1976 - SEPTEMBER 2008 (NUMBER) 145
- TRENDS BY COUNTRY 145
- TABLE 66 SHARES OF U.S. PATENTS ON ALTERNATIVE DIELECTRICS AND SUBSTRATES-
BY COUNTRY, 1976 - SEPTEMBER 2009 146
- TRENDS BY ASSIGNEE 146
- TABLE 67 LIST OF ASSIGNEES FOR U.S. PATENTS ON ALTERNATIVE DIELECTRICS AND
SUBSTRATES, 1976 - SEPTEMBER 2009 147
- TABLE 67 (CONTINUED) 148
- TABLE 68 ASSIGNEES OF TEN OR MORE U.S. PATENTS ON ALTERNATIVE DIELECTRICS
AND SUBSTRATES, 1976 - SEPTEMBER 2009 149
- TABLE 68 ASSIGNEES OF TEN OR MORE U.S. PATENTS ON ALTERNATIVE DIELECTRICS
AND SUBSTRATES, 1976 - SEPTEMBER 2009 (CONTINUED) 150
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