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市場調查報告書

化合物半導體的全球市場(半導體類型,沉澱技術,產品,各用途) - 成長機會分析與產業預測

Compound Semiconductor Market by Type (III-V Compound Semiconductors, II-VI Compound Semiconductors, Sapphire, IV-IV Compound Semiconductors), Deposition Technology, Product, and Application - Global Opportunity Analysis and Industry Forecast, 2017-2023

出版商 Allied Market Research 商品編碼 563350
出版日期 內容資訊 英文 309 Pages
商品交期: 最快1-2個工作天內
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化合物半導體的全球市場(半導體類型,沉澱技術,產品,各用途) - 成長機會分析與產業預測 Compound Semiconductor Market by Type (III-V Compound Semiconductors, II-VI Compound Semiconductors, Sapphire, IV-IV Compound Semiconductors), Deposition Technology, Product, and Application - Global Opportunity Analysis and Industry Forecast, 2017-2023
出版日期: 2017年08月01日 內容資訊: 英文 309 Pages
簡介

本報告以化合物半導體的全球市場為焦點,依各半導體類型,沉澱技術,產品,用途,地區別分析·預測供需規模的轉變,再彙整市場發展的推動·阻礙因素和課題,技術開發,競爭環境,主要加入企業等相關的最新資訊。

第1章 簡介

  • 報告說明
  • 報告的主要優點
  • 主要市場區隔
  • 調查方法
    • 二次資訊調查
    • 一次資訊採訪
    • 分析工具及模式

第2章 摘要整理

  • 經營團隊的觀點

第3章 市場概要

  • 市場定義和範圍
  • 重要發現
    • 主要影響係數
    • 主要投資口袋
    • 主要成功策略
  • 波特的五力分析
    • 波特的五力分析
  • 價值鏈分析
    • 原料供給業者
    • 廠商
    • 整合者
    • 終端用戶
  • 大環境分析
  • 市場佔有率分析
  • 競爭分析
  • 專利分析
  • 市場動態
    • 推動要素
    • 阻礙因素
    • 成長機會

第4章 化合物半導體市場 - 半導體類別

  • 簡介
    • 重要市場趨勢,成長係數,機會
    • 市場規模與預測
  • III-V族半導體
    • 重要市場趨勢,成長係數,機會
    • 市場規模與預測
    • 氮化鎵(GaN)
    • 鎵磷(GaP)
    • 鎵砷(GaAS)
    • 銦磷(InP)
    • 銦銻(InSb)
  • II-VI族半導體
    • 重要市場趨勢,成長係數,機會
    • 市場規模與預測
    • 硒化鎘(CdSe)
    • 碲化鎘(CdTe)
    • 硒化鋅(ZnSe)
  • 藍寶石
    • 重要市場趨勢,成長係數,機會
    • 市場規模與預測
  • IV-IV族半導體
    • 重要市場趨勢,成長係數,機會
    • 市場規模與預測
    • 碳化矽(SiC)
    • 矽鍺(SiGe)
  • 其他
    • 重要市場趨勢,成長係數,機會
    • 市場規模與預測
    • 鋁鎵砷(AlGaAs)
    • 鋁銦砷(AlInAs)
    • 氮化鋁鎵(AlGaN)
    • 鋁鎵磷(AlGaP)
    • 氮化銦鎵(InGaN)
    • 鎘鋅碲(CdZnTe)
    • 汞碲化鎘(HgCdTe)

第5章 化合物半導體市場 - 不同沉積技術

  • 簡介
    • 重要市場趨勢,成長係數,機會
    • 市場規模與預測
  • 化學氣相澱積(CVD)
    • 重要市場趨勢,成長係數,機會
    • 市場規模與預測
    • 金屬有機化學沉澱(MOMBE)
  • 氫化物氣相磊晶法(HVPE)
    • 重要市場趨勢,成長係數,機會
    • 市場規模與預測
  • 氨熱
    • 重要市場趨勢,成長係數,機會
    • 市場規模與預測
    • 液相成長(LPE)
  • 原子層沉澱(ALD)
    • 重要市場趨勢,成長係數,機會
    • 市場規模與預測
  • 其他
    • 重要市場趨勢,成長係數,機會
    • 市場規模與預測

第6章 化合物半導體市場 - 各產品

  • 簡介
    • 重要市場趨勢,成長係數,機會
    • 市場規模與預測
  • 電力半導體
    • 重要市場趨勢,成長係數,機會
    • 市場規模與預測
  • 電晶體
    • 重要市場趨勢,成長係數,機會
    • 市場規模與預測
    • 高電子移動性電晶體(HEMT)
    • 金屬氧化薄膜半導體場效應晶體管(MOSFET)
    • 金屬-半導體場效應晶體管(MESFET)
  • 積體電路(IC)
    • 重要市場趨勢,成長係數,機會
    • 市場規模與預測
    • 單片微波積體電路(MMIC)
    • 高頻積體電路(RFIC)
  • 二極體及整流單元
    • 重要市場趨勢,成長係數,機會
    • 市場規模與預測
    • PIN二極體
    • 齊納二極體
    • 肖特基二極體
    • 發光半導體
  • 其他
    • 重要市場趨勢,成長係數,機會
    • 市場規模與預測
  • 其他
    • 重要市場趨勢,成長係數,機會
    • 市場規模與預測

第7章 化合物半導體市場 - 各用途

  • 簡介
    • 重要市場趨勢,成長係數,機會
    • 市場規模與預測
  • 資訊科技(IT)·遠隔通訊
    • 重要市場趨勢,成長係數,機會
    • 市場規模與預測
    • 信號增幅器及替換系統
    • 衛星通訊
    • 雷達
    • 無線電頻率(射頻)設備
  • 工業,能源及電力
    • 重要市場趨勢,成長係數,機會
    • 市場規模與預測
    • 智慧電網
    • 風力發電機及風力發電系統
    • 太陽能光電發電變頻器
    • 馬達驅動裝置
  • 航太·防衛
    • 重要市場趨勢,成長係數,機會
    • 市場規模與預測
    • 戰鬥車輛
    • 軍艦和船隻
    • 微波輻射設備
  • 汽車
    • 重要市場趨勢,成長係數,機會
    • 市場規模與預測
    • 電動車及混合電動車
    • 汽車煞車系統
    • 鐵路牽引車
    • 汽車馬達驅動裝置
  • 家用電子設備
    • 重要市場趨勢,成長係數,機會
    • 市場規模與預測
    • 變頻器
    • LED照明
    • 方式轉換家用電源系統
  • 醫療
    • 重要市場趨勢,成長係數,機會
    • 市場規模與預測
    • 植入型醫療設備(IMD)
    • 生物醫療電子設備

第8章 化合物半導體市場 - 各地區

  • 簡介
  • 北美
    • 重要市場趨勢,成長係數,機會
    • 市場規模與預測
    • 美國
    • 加拿大
    • 墨西哥
  • 歐洲
  • 亞太地區
  • 中南美·中東

第9章 企業簡介

目錄
Product Code: SE 171006

The global compound semiconductor market was valued at $66,623 million in 2016, and is expected to reach $142,586 million by 2023, registering a CAGR of 11.3% from 2017 to 2023. Compound semiconductors, such as GaN and SiC, comprises two or more elements of the periodic table, and are synthesized using deposition technologies. The devices manufactured using semiconductors form essential components of most electronic circuits, , as they possess unique properties such as, wide bandgap, high operational temperatures, high current & voltage holding capacity, and ability to generate microwave signals.

The global compound semiconductor market is driven by widespread applications of gallium nitride electronics and rise in demand for different automotive electronics in the Asia-Pacific region. Moreover, increase in demand for optoelectronics devices & wireless communication technologies and rise in adoption of photovoltaics boost the market growth. In addition, evolution of compound semiconductor compliant technology & products in the Asia-Pacific region and increase in volume of data transactions drive the market growth. However, rise in compatibility issues related to high-end materials, such as silicon, restrains the market growth. Conversely, increase in use of GaN in smart grid as compared to traditional silicon semiconductors is expected to provide growth opportunities for the market.

The global compound semiconductor market is segmented on the basis of type, deposition technology, product, application, and geography. Based on type, it is categorized into III-V compound semiconductors, II-VI compound semiconductors, sapphire, IV-IV compound semiconductors, and others (aluminum gallium arsenide (ALGAAS), aluminum indium arsenide (ALINAS), aluminum gallium nitride (ALGAN), aluminum gallium phosphide (ALGAP), indium gallium nitride (INGAN), cadmium zinc telluride (CDZNTE), and mercury cadmium telluride (HGCDTE)). The III-V compound semiconductors segment is further divided into gallium nitride (GAN), gallium phosphide (GAP), gallium arsenide (GAAS), indium phosphide (INP), and indium antimonide (INSB).

The II-VI compound semiconductors segment is classified into cadmium selenide (CDSE), cadmium telluride (CDTE), and zinc selenide (ZNSE). The IV-IV compound semiconductors segment is bifurcated into silicon carbide (SIC) and silicon germanium (SIGE). Based on deposition technology, the market is divided into chemical vapor deposition (CVD), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE), ammonothermal, liquid phase epitaxy (LPE), atomic layer deposition (ALD), and others. On the basis of product, it is categorized into power semiconductor, transistors, integrated circuits (ICs), diodes & rectifiers, and others. The transistors segment is further classified into high electron mobility transistors (HEMTs), metal oxide semiconductor field effect transistors (MOSFETs), and metal semiconductor field effect transistors (MESFETs). ICs are further bifurcated into monolithic microwave integrated circuits (MMICs) and radio frequency integrated circuits (RFICs). The diode & rectifiers segment is further divided into PIN diode, Zener diode, Schottky diode, and light emitting diode. The applications covered in this study include IT & telecom, industrial and energy & power, aerospace & defense, automotive, consumer electronics, and healthcare.

The IT & telecom segment is further categorized into signal amplifiers & switching systems, satellite communication applications, radar applications, and RF. The aerospace & defense segment is classified into combat vehicles, ships & vessels, and microwave radiation. The industrial and energy & power segment is further bifurcated into wind turbines and wind power systems. The consumer electronics segment is further divided into inverters in consumer applications, LED lighting in consumer applications, and switch mode consumer power supply systems. The automotive segment is further categorized into electric vehicles & hybrid electric vehicles, automotive braking systems, rail traction, and automobile motor drives. The healthcare segment is bifurcated into implantable medical devices and biomedical electronics.

Geographically, the market is analyzed across North America (U.S., Mexico, and Canada), Europe (UK, Germany, France, and rest of Europe), Asia-Pacific (China, Japan, India, Australia, and rest of Asia-Pacific), and LAMEA (Latin America, Middle East, and Africa).

The major companies profiled in the report include Cree Inc., International Quantum Epitaxy PLC., Freescale Semiconductor Inc., LM Ericsson Telefon AB, Taiwan Semiconductor Manufacturing Company Ltd., Renesas Electronics Corporation, Texas Instruments, Inc., STMicroelectronics NV, Infineon Technologies AG, and Toshiba Corporation.

KEY BENEFITS FOR STAKEHOLDERS

  • The report provides comprehensive analysis of the current trends and future estimations in the global compound semiconductor market.
  • The report offers the competitive scenario of the industry along with the growth trends, structure, drivers, scope, opportunities, and challenges.
  • The report includes a detailed analysis of the key segments to provide insights on the market dynamics.
  • Porter's five forces analysis highlights the potential of buyers & suppliers and the competitive structure of the market to devise effective growth strategies and facilitate better decision-making.

KEY MARKET SEGMENTS

By Type

  • III-V Compound Semiconductors
  • Gallium Nitride (GAN)
  • Gallium Phosphide (GAP)
  • Gallium Arsenide (GAAS)
  • Indium Phosphide (INP)
  • Indium Antimonide (INSB)
  • II-VI Compound Semiconductors
  • Cadmium Selenide (CDSE)
  • Cadmium Telluride (CDTE)
  • Zinc Selenide (ZNSE)
  • Sapphire
  • IV-IV Compound Semiconductors
  • Silicon Carbide (SIC)
  • Silicon Germanium (SIGE)
  • Others
  • Aluminum Gallium Arsenide (ALGAAS)
  • Aluminum Indium Arsenide (ALINAS)
  • Aluminum Gallium Nitride (ALGAN)
  • Aluminum Gallium Phosphide (ALGAP)
  • Indium Gallium Nitride (INGAN)
  • Cadmium Zinc Telluride (CDZNTE)
  • Mercury Cadmium Telluride (HGCDTE)

By Deposition Technology

  • Chemical Vapor Deposition (CVD)
  • Metal Organic Chemical Vapor Deposition (MOCVD)
  • Molecular Beam Epitaxy (MBE)
  • Metal Organic Molecular Beam Epitaxy (MOMBE)
  • Hydride Vapor Phase Epitaxy (HVPE)
  • Ammonothermal
  • Liquid Phase Epitaxy (LPE)
  • Atomic Layer Deposition (ALD)
  • Others
  • NA-FLUX LPE

By Product

  • Power Semiconductor
  • Transistors
  • High Electron Mobility Transistors (HEMTs)
  • Metal Oxide Semiconductor Field Effect Transistors (MOSFETs)
  • Metal Semiconductor Field Effect Transistors (MESFETs)
  • Integrated Circuits (ICs)
  • Monolithic Microwave Integrated Circuits(MMICs)
  • Radio Frequency Integrated Circuits (RFICs)
  • Diodes & Rectifiers
  • PIN diode
  • Zener Diode
  • Schottky Diode
  • Light Emitting Diode
  • Others

By Application

  • ICT Sector
  • Signal Amplifiers & Switching Systems
  • Satellite Communication
  • Radar
  • RF
  • Aerospace & Defense
  • Combat Vehicles
  • Ships & Vessels
  • Microwave Radiation
  • Industrial and Energy & Power
  • Smart Grid
  • Wind Turbines & Wind Power Systems
  • Photovoltaic Inverters
  • Motor Drives
  • Consumer Electronics
  • Inverters in Consumer
  • LED Lighting in Consumer
  • Switch Mode Consumer Power Supply Systems
  • Automotive
  • Electric Vehicles & Hybrid Electric Vehicles
  • Automotive Braking Systems
  • Rail Traction
  • Automobile Motor Drives
  • Medical
  • Implantable Medical Devices
  • Biomedical Electronics

By Geography

  • North America
  • U.S.
  • Mexico
  • Canada
  • Europe
  • UK
  • Germany
  • France
  • Rest of Europe
  • Asia-Pacific
  • China
  • Japan
  • India
  • Australia
  • Rest of Asia-Pacific
  • LAMEA
  • Latin America
  • Middle East
  • Africa
  • Key Players
  • Cree Inc.
  • International Quantum Epitaxy Plc.
  • Freescale Semiconductor Inc.
  • LM Ericsson Telefon AB
  • Taiwan Semiconductor Manufacturing Company Ltd.
  • Renesas Electronics Corporation
  • Texas Instruments, Inc.
  • STMicroelectronics NV
  • Infineon Technologies AG
  • Toshiba Corporation
  • The other players in the value chain include (profiles not included in the report)
  • Mining & Chemical Products Ltd.
  • Umicore Indium Products
  • United Mineral & Chemical Corp

Table of Contents

CHAPTER 1 Introduction

  • 1.1. Report Description
  • 1.2. Key Benefits for Stakeholders
  • 1.3. Key Market Segments
  • 1.4. Research Methodology
    • 1.4.1. Secondary Research
    • 1.4.2. Primary Research
    • 1.4.3. Analyst Tools and Models

Chapter 2 Executive Summary

  • 2.1. CXO Perspective

Chapter 3 Market Overview

  • 3.1. Market Definition and Scope
  • 3.2. Key Findings
    • 3.2.1. Top Impacting Factors
    • 3.2.2. Top Winning Strategies
    • 3.2.3. Top Investment Pockets
  • 3.3. Porters Five Forces Analysis
    • 3.3.1. Porters Five Forces Analysis
  • 3.4. Value Chain Analysis
    • 3.4.1. Raw Material Providers
    • 3.4.2. Manufacturers
    • 3.4.3. Integrators
    • 3.4.4. End Users
  • 3.5. Pestle Analysis
  • 3.6. Market Share Analysis, 2016
  • 3.7. Competitive Analysis
  • 3.8. Patent Analysis
  • 3.9. Market Dynamics
    • 3.9.1. Drivers
    • 3.9.2. Restraint
    • 3.9.3. Opportunity

CHAPTER 4 COMPOUND SEMICONDUCTOR MARKET, BY TYPE

  • 4.1. INTRODUCTION
    • 4.1.1. Key market trends, growth factors, and opportunities
    • 4.1.2. Market size and forecast
  • 4.2. III-V COMPOUND SEMICONDUCTORS
    • 4.2.1. Key market trends, growth factors, and opportunities
    • 4.2.2. Market size and forecast
    • 4.2.3. Gallium nitride (GaN)
      • 4.2.3.1. Market size and forecast
    • 4.2.4. Gallium phosphide (GaP)
      • 4.2.4.1. Market size and forecast
    • 4.2.5. Gallium arsenide (GaAS)
      • 4.2.5.1. Market size and forecast
    • 4.2.6. Indium phosphide (InP)
      • 4.2.6.1. Market size and forecast
    • 4.2.7. Indium antimonide (InSb)
      • 4.2.7.1. Market size and forecast
  • 4.3. II-VI COMPOUND SEMICONDUCTORS
    • 4.3.1. Key market trends, growth factors, and opportunities
    • 4.3.2. Market size and forecast
    • 4.3.3. Cadmium selenide (CdSe)
      • 4.3.3.1. Market size and forecast
    • 4.3.4. Cadmium telluride (CdTe)
      • 4.3.4.1. Market size and forecast
    • 4.3.5. Zinc selenide (ZnSe)
      • 4.3.5.1. Market size and forecast
  • 4.4. SAPPHIRE
    • 4.4.1. Key market trends, growth factors, and opportunities
    • 4.4.2. Market size and forecast
  • 4.5. IV-IV COMPOUND SEMICONDUCTORS
    • 4.5.1. Key market trends, growth factors, and opportunities
    • 4.5.2. Market size and forecast
    • 4.5.3. Silicon carbide (SiC)
      • 4.5.3.1. Market size and forecast
    • 4.5.4. Silicon germanium (SiGe)
      • 4.5.4.1. Market size and forecast
  • 4.6. OTHERS
    • 4.6.1. Key market trends, growth factors, and opportunities
    • 4.6.2. Market size and forecast
    • 4.6.3. Aluminum gallium arsenide (AlGaAs)
      • 4.6.3.1. Market size and forecast
    • 4.6.4. Aluminum indium arsenide (AlInAs)
      • 4.6.4.1. Market size and forecast
    • 4.6.5. Aluminum gallium nitride (AlGaN)
      • 4.6.5.1. Market size and forecast
    • 4.6.6. Aluminum gallium phosphide (AlGaP)
      • 4.6.6.1. Market size and forecast
    • 4.6.7. Indium gallium nitride (InGaN)
      • 4.6.7.1. Market size and forecast
    • 4.6.8. Cadmium zinc telluride (CdZnTe)
      • 4.6.8.1. Market size and forecast
    • 4.6.9. Mercury cadmium telluride (HgCdTe)
      • 4.6.9.1. Market size and forecast

CHAPTER 5 COMPOUND SEMICONDUCTOR MARKET, BY DEPOSITION TECHNOLOGY

  • 5.1. INTRODUCTION
    • 5.1.1. Key market trends, growth factors, and opportunities
    • 5.1.2. Market size and forecast
  • 5.2. CHEMICAL VAPOR DEPOSITION (CVD)
    • 5.2.1. Key market trends, growth factors, and opportunities
    • 5.2.2. Market size and forecast
    • 5.2.3. Metal organic chemical vapor deposition (MOCVD)
      • 5.2.3.1. Market size and forecast
  • 5.3. MOLECULAR BEAM EPITAXY (MBE)
    • 5.3.1. Key market trends, growth factors, and opportunities
    • 5.3.2. Market size and forecast
    • 5.3.3. Metal organic molecular beam epitaxy (MOMBE)
      • 5.3.3.1. Market size and forecast
  • 5.4. HYDRIDE VAPOR PHASE EPITAXY (HVPE)
    • 5.4.1. Key market trends, growth factors, and opportunities
    • 5.4.2. Market size and forecast
  • 5.5. AMMONOTHERMAL
    • 5.5.1. Key market trends, growth factors, and opportunities
    • 5.5.2. Market size and forecast
      • 5.5.2.1. Liquid Phase Epitaxy (LPE)
    • 5.5.3. Key market trends, growth factors, and opportunities
    • 5.5.4. Market size and forecast
  • 5.6. ATOMIC LAYER DEPOSITION (ALD)
    • 5.6.1. Key market trends, growth factors, and opportunities
    • 5.6.2. Market size and forecast
  • 5.7. OTHERS
    • 5.7.1. Key market trends, growth factors, and opportunities
    • 5.7.2. Market size and forecast

CHAPTER 6 COMPOUND SEMICONDUCTOR MARKET, BY PRODUCT

  • 6.1. INTRODUCTION
    • 6.1.1. Key market trends, growth factors, and opportunities
    • 6.1.2. Market size and forecast
  • 6.2. POWER SEMICONDUCTOR
    • 6.2.1. Key market trends, growth factors, and opportunities
    • 6.2.2. Market size and forecast
  • 6.3. TRANSISTOR
    • 6.3.1. Key market trends, growth factors, and opportunities
    • 6.3.2. Market size and forecast
    • 6.3.3. High electron mobility transistors (HEMTs)
      • 6.3.3.1. Market size and forecast
    • 6.3.4. Metal oxide semiconductor field-effect transistors (MOSFETs)
      • 6.3.4.1. Market size and forecast
    • 6.3.5. Metal semiconductor field-effect transistors (MESFETs)
      • 6.3.5.1. Market size and forecast
  • 6.4. INTEGRATED CIRCUITS (ICS)
    • 6.4.1. Key market trends, growth factors, and opportunities
    • 6.4.2. Market size and forecast
    • 6.4.3. Monolithic microwave integrated circuits (MMICs)
      • 6.4.3.1. Market size and forecast
    • 6.4.4. Radio frequency integrated circuits (RFICs)
      • 6.4.4.1. Market size and forecast
  • 6.5. DIODES & RECTIFIERS
    • 6.5.1. Key market trends, growth factors, and opportunities
    • 6.5.2. Market size and forecast
    • 6.5.3. PIN diode
      • 6.5.3.1. Market size and forecast
    • 6.5.4. Zener diode
      • 6.5.4.1. Market size and forecast
    • 6.5.5. Schottky diode
      • 6.5.5.1. Market size and forecast
    • 6.5.6. Light-emitting diode (LED)
      • 6.5.6.1. Market size and forecast
  • 6.6. OTHERS
    • 6.6.1. Key market trends, growth factors, and opportunities
    • 6.6.2. Market size and forecast

CHAPTER 7 COMPOUND SEMICONDUCTOR MARKET, BY APPLICATION

  • 7.1. INTRODUCTION
    • 7.1.1. Key market trends, key growth factors, and opportunities
    • 7.1.2. Market size and forecast
  • 7.2. IT & TELECOM
    • 7.2.1. Key market trends, growth factors, and opportunities
    • 7.2.2. Market size and forecast
    • 7.2.3. Signal amplifiers & switching systems
      • 7.2.3.1. Market size and forecast
    • 7.2.4. Satellite communication
      • 7.2.4.1. Market size and forecast
    • 7.2.5. Radar
      • 7.2.5.1. Market size and forecast
    • 7.2.6. RF
      • 7.2.6.1. Market size and forecast
  • 7.3. INDUSTRIAL AND ENERGY & POWER
    • 7.3.1. Key market trends, growth factors, and opportunities
    • 7.3.2. Market size and forecast
    • 7.3.3. Smart grid
      • 7.3.3.1. Market size and forecast
    • 7.3.4. Wind turbines & wind power systems
      • 7.3.4.1. Market size and forecast
    • 7.3.5. Photovoltaic inverters
    • 7.3.6. Motor drives
      • 7.3.6.1. Market size and forecast
  • 7.4. AEROSPACE & DEFENSE
    • 7.4.1. Key market trends, growth factors, and opportunities
    • 7.4.2. Market size and forecast
    • 7.4.3. Combat vehicles
      • 7.4.3.1. Market size and forecast
    • 7.4.4. Ships & vessels
      • 7.4.4.1. Market size and forecast
    • 7.4.5. Microwave radiation
      • 7.4.5.1. Market size and forecast
  • 7.5. AUTOMOTIVE
    • 7.5.1. Key market trends, growth factors, and opportunities
    • 7.5.2. Market size and forecast
    • 7.5.3. Electric vehicles & hybrid electric vehicles
      • 7.5.3.1. Market size and forecast
    • 7.5.4. Automotive braking systems
      • 7.5.4.1. Market size and forecast
    • 7.5.5. Rail traction
      • 7.5.5.1. Market size and forecast
    • 7.5.6. Automobile motor drives
      • 7.5.6.1. Market size and forecast
  • 7.6. CONSUMER ELECTRONICS
    • 7.6.1. Key market trends, growth factors, and opportunities
    • 7.6.2. Market size and forecast
    • 7.6.3. Inverters
      • 7.6.3.1. Market size and forecast
    • 7.6.4. LED lighting
      • 7.6.4.1. Market size and forecast
    • 7.6.5. Switch mode consumer power supply system (SMPS)
      • 7.6.5.1. Market size and forecast
  • 7.7. HEALTHCARE
    • 7.7.1. Key market trends, growth factors, and opportunities
    • 7.7.2. Market size and forecast
    • 7.7.3. Implantable medical devices (IMDs)
      • 7.7.3.1. Market size and forecast
    • 7.7.4. Biomedical electronics
      • 7.7.4.1. Market size and forecast

CHAPTER 8 COMPOUND SEMICONDUCTOR MARKET, BY GEOGRAPHY

  • 8.1. INTRODUCTION
  • 8.2. NORTH AMERICA
    • 8.2.1. Key market trends, growth factors, and opportunities
    • 8.2.2. Market size and forecast
    • 8.2.3. U.S.
      • 8.2.3.1. Market size and forecast
    • 8.2.4. Canada
      • 8.2.4.1. Market size and forecast
    • 8.2.5. Mexico
      • 8.2.5.1. Market size and forecast
  • 8.3. EUROPE
    • 8.3.1. Introduction
    • 8.3.2. Key market trends, growth factors, and opportunities
    • 8.3.3. Market size and forecast
    • 8.3.4. UK
      • 8.3.4.1. Market size and forecast
    • 8.3.5. Germany
      • 8.3.5.1. Market size and forecast
    • 8.3.6. France
      • 8.3.6.1. Market size and forecast
    • 8.3.7. Rest of Europe
      • 8.3.7.1. Market size and forecast
  • 8.4. ASIA-PACIFIC
    • 8.4.1. Introduction
    • 8.4.2. Key market trends, growth factors, and opportunities
    • 8.4.3. Market size and forecast
    • 8.4.4. China
      • 8.4.4.1. Market size and forecast
    • 8.4.5. Japan
      • 8.4.5.1. Market size and forecast
    • 8.4.6. India
      • 8.4.6.1. Market size and forecast
    • 8.4.7. Australia
      • 8.4.7.1. Market size and forecast
    • 8.4.8. Rest of Asia-Pacific
  • 8.5. LAMEA
    • 8.5.1. Introduction
    • 8.5.2. Key market trends, growth factors, and opportunities
    • 8.5.3. Market size and forecast
    • 8.5.4. Latin America
      • 8.5.4.1. Market size and forecast
    • 8.5.5. Middle East
      • 8.5.5.1. Market size and forecast
    • 8.5.6. Africa
      • 8.5.6.1. Market size and forecast

CHAPTER 9 COMPANY PROFILE

  • 9.1. CREE INC.
    • 9.1.1. Company overview
    • 9.1.2. Operating business segments
    • 9.1.3. Business performance
  • 9.2. INFINEON TECHNOLOGIES AG
    • 9.2.1. Company overview
    • 9.2.2. Operating business segments
    • 9.2.3. Business performance
    • 9.2.4. Key strategic moves and developments
  • 9.3. INTERNATIONAL QUANTUM EPITAXY PLC.
    • 9.3.1. Company overview
    • 9.3.2. Operating business segments
    • 9.3.3. Business performance
    • 9.3.4. Key strategic moves and developments
  • 9.4. TOSHIBA CORPORATION
    • 9.4.1. Company overview
    • 9.4.2. Operating business segments
    • 9.4.3. Business performance
    • 9.4.4. Key strategic moves and developments
  • 9.5. LM ERICSSON TELEFON AB
    • 9.5.1. Company overview
    • 9.5.2. Operating business segments
    • 9.5.3. Business performance
  • 9.6. NXP SEMICONDUCTORS
    • 9.6.1. Company overview
    • 9.6.2. Operating business segments
    • 9.6.3. Business performance
    • 9.6.4. Key strategic moves and developments
  • 9.7. RENESAS ELECTRONICS CORPORATION
    • 9.7.1. Company overview
    • 9.7.2. Operating business segments
    • 9.7.3. Business performance
  • 9.8. STMICROELECTRONICS NV
    • 9.8.1. Company overview
    • 9.8.2. Operating business segments
    • 9.8.3. Business performance
    • 9.8.4. Key strategic moves and developments
  • 9.9. TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    • 9.9.1. Company overview
    • 9.9.2. Operating business segments
    • 9.9.3. Business performance
    • 9.9.4. Key strategic moves and developments
  • 9.10. TEXAS INSTRUMENTS
    • 9.10.1. Company overview
    • 9.10.2. Operating business segments
    • 9.10.3. Business performance
    • 9.10.4. Key strategic moves and developments
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