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市場調查報告書

行動·無線基礎設施用RF功率半導體設備

RF Power Semiconductor Devices for Mobile and Wireless Infrastructure

出版商 ABI Research 商品編碼 328898
出版日期 內容資訊 英文 12 Pages
商品交期: 最快1-2個工作天內
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行動·無線基礎設施用RF功率半導體設備 RF Power Semiconductor Devices for Mobile and Wireless Infrastructure
出版日期: 2015年04月23日 內容資訊: 英文 12 Pages
簡介

本報告涵括RF功率半導體市場,闡明RF功率半導體和RF功率放大器的互相依存關係,擴大中的中國·亞太地區市場相關討論與資料,氮化鎵 (GaN) 設備對未來RFPA半導體設備市場的影響之相關討論,及行動無線基礎設施RF功率半導體的定量預測等系統性資訊。

第1章 無線基礎設施興旺的一年

第2章 技術促進要素·檢討

  • RF功率半導體設備
  • 矽LDMOS
  • GaAs
  • SiC
  • GaN
  • 設備直線性的問題
  • 效率的疑慮
  • 塑膠包裝
  • 產業定位
  • 未來的RF電力設備趨勢

第3章 RF功率半導體設備市場概要

  • 預測手法
  • RF功率放大器設備:供應商·市場佔有率
  • RF功率放大器設備:各加工技術
  • RF功率放大器設備:各包裝類型
  • RF功率放大器設備:傳統vs. 高效率型
  • RF功率放大器設備:美金/瓦特預測
  • RF功率放大器設備:出貨量·收益預測
  • RF功率放大器設備:各地區的收益預測

圖表

目錄
Product Code: AN-1988

RF power amplifiers are integral parts of all basestations for cellular and mobile wireless infrastructure. They represent one of the most expensive component sub-assemblies in modern wireless infrastructure equipment and both their performance and cost are important drivers in base station design. Efficiency, physical size, linearity, and reliability are among the principal concerns. As price pressures become fiercer, new and innovative techniques and materials must be used to reduce the cost of this important component part while still maintaining performance.

The RF power semiconductors used in these power amplifiers are the linchpin for their cost and capability and they must keep pace with both the economic and technical realities facing designers and users of these RF power amplifiers.

This report examines all of the above topics and illuminates the interdependent relationship of RF power semiconductors to RF power amplifiers. Included are discussions and selected data on the expanding China and Asia-Pacific marketplaces plus a discussion on how gallium nitride (GaN) devices will affect the future of the RFPA semiconductor device market. Quantitative forecasts are presented through 2020 for RF power semiconductors for mobile wireless infrastructure.

Table of Contents

1. A BANNER YEAR FOR WIRELESS INFRASTRUCTURE

2. TECHNOLOGY DRIVERS AND REVIEW

  • 2.1. RF Power Semiconductor Devices
  • 2.2. Silicon LDMOS
  • 2.3. GaAs
  • 2.4. SiC
  • 2.5. GaN
  • 2.6. Device Linearity Issues
  • 2.7. Efficiency Concerns
  • 2.8. Plastic Packaging
  • 2.9. Industry Positioning
  • 2.10. Future RF Power Device Trends

3. RF POWER SEMICONDUCTOR DEVICE MARKET OVERVIEW

  • 3.1. Forecast Methodology
  • 3.2. RF Power Amplifier Device Suppliers and Market Share
  • 3.3. RF Power Amplifier Devices by Process Technology
  • 3.4. RF Power Amplifier Devices by Package Type
  • 3.5. RF Power Amplifier Devices, Conventional versus High-efficiency
  • 3.6. RF Power Amplifier Device US$/W Implications
  • 3.7. RF Power Amplifier Device Shipment and Revenue Forecasts
  • 3.8. RF Power Amplifier Device Revenue by Region Forecast

Tables

  • 1.Cellular and Mobile Wireless Infrastructure RF Power Device Shipments by Process Technology, World Market: 2014
  • 2.Total Revenue Growth for Cellular and Mobile Wireless Infrastructure RF Power Devices, World Market, Forecast: 2014 to 2020
  • 3.Total Shipment Growth for Cellular and Mobile Wireless Infrastructure RF Power Devices, World Market, Forecast: 2014 to 2020

Charts

  • 1.Cellular and Mobile Wireless Infrastructure RF Power Device Shipments by Process Technology, World Market: 2014
  • 2.Total Revenue Growth for Cellular and Mobile Wireless Infrastructure RF Power Devices, World Market, Forecast: 2014 to 2020
  • 3.Total Shipment Growth for Cellular and Mobile Wireless Infrastructure RF Power Devices, World Market, Forecast: 2014 to 2020
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