RF Power Semiconductor Devices for Mobile and Wireless Infrastructure
|出版日期||內容資訊||英文 12 Pages
|行動·無線基礎設施用RF功率半導體設備 RF Power Semiconductor Devices for Mobile and Wireless Infrastructure|
|出版日期: 2015年04月23日||內容資訊: 英文 12 Pages||
本報告涵括RF功率半導體市場，闡明RF功率半導體和RF功率放大器的互相依存關係，擴大中的中國·亞太地區市場相關討論與資料，氮化鎵 (GaN) 設備對未來RFPA半導體設備市場的影響之相關討論，及行動無線基礎設施RF功率半導體的定量預測等系統性資訊。
RF power amplifiers are integral parts of all basestations for cellular and mobile wireless infrastructure. They represent one of the most expensive component sub-assemblies in modern wireless infrastructure equipment and both their performance and cost are important drivers in base station design. Efficiency, physical size, linearity, and reliability are among the principal concerns. As price pressures become fiercer, new and innovative techniques and materials must be used to reduce the cost of this important component part while still maintaining performance.
The RF power semiconductors used in these power amplifiers are the linchpin for their cost and capability and they must keep pace with both the economic and technical realities facing designers and users of these RF power amplifiers.
This report examines all of the above topics and illuminates the interdependent relationship of RF power semiconductors to RF power amplifiers. Included are discussions and selected data on the expanding China and Asia-Pacific marketplaces plus a discussion on how gallium nitride (GaN) devices will affect the future of the RFPA semiconductor device market. Quantitative forecasts are presented through 2020 for RF power semiconductors for mobile wireless infrastructure.