使用氮化鎵(GaN)電路板的設備：性能比較及市場評價

Abstract

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Table of Contents

1. EXECUTIVE SUMMARY

• 1.1 Introduction
• 1.2 Technology Summary
  • 1.2.1 Selected Technical Issues
    • 1.2.1.1 Substrate Types and Characteristics (Sapphire, SiC, GaN, AlN, Si)
    • 1.2.1.2 Crystal Growth Techniques
    • 1.2.1.3 Deposited Substrate Growth
• 1.3 Major Applications/Device Types
• 1.4 Major Players (Commercial Suppliers, Research Centers, Universities, and Government Agencies)
• 1.5 Sales/Market Forecasts
  • 1.5.1 Substrates
  • 1.5.2 Optoelectronic Devices (LEDs, LDs)
  • 1.5.3 Electronic Devices (RF/Microwave, Power Switch, High-Voltage Rectifier, High-Temperature)
• 1.6 The Report
• 1.7 Bibliography

2. TECHNOLOGY SUMMARY

• 2.1 Basic Substrate Materials Properties
  • 2.1.1 Crystal Structure
  • 2.1.2 Bandgap
  • 2.1.3 Electron Saturated Drift Velocity
  • 2.1.4 Breakdown Electric Field
  • 2.1.5 Dielectric Constant
  • 2.1.6 Thermal Conductivity
  • 2.1.7 Coefficient of Thermal Expansion (CTE)
  • 2.1.8 Lattice Match with Deposited Films
• 2.2 Substrate Formation
  • 2.2.1 Bulk
  • 2.2.2 Deposited (Heterodeposition)
• 2.3 Suitability of Substrates
  • 2.3.1 Quality
  • 2.3.2 Price
  • 2.3.3 Availability
  • 2.3.4 Uniformity
  • 2.3.5 Compatibility with Active Layers
  • 2.3.6 Device Yield
  • 2.3.7 End Product Performance/Application
  • 2.3.8 End Product Reliability/Lifetime
  • 2.3.9 Figures of Merit/Device Performance

3. MAJOR APPLICATIONS/DEVICE TYPES

4. DIRECTORY OF COMPANIES/RESEARCH CENTERS/UNIVERSITIES/ GOVERNMENT AGENCIES ACTIVE IN SUBSTRATE PRODUCTION AND DEVELOPMENT

• 4.1 Companies
  • 4.1.1 North America
    • 4.1.1.1 U.S.
    • 4.1.1.2 Canada
  • 4.1.2 Asia
    • 4.1.2.1 Japan
    • 4.1.2.2 South Korea
    • 4.1.2.3 Taiwan
  • 4.1.3 Europe
    • 4.1.3.1 Finland
    • 4.1.3.2 France
    • 4.1.3.3 Germany
    • 4.1.3.4 Poland
    • 4.1.3.5 Russia
• 4.2 Universities/Research Centers Active in Compound Semiconductor Substrate Development
  • 4.2.1 North America
    • 4.2.1.1 U.S.
    • 4.2.1.2 Canada
  • 4.2.2 Asia/Pacific
    • 4.2.2.1 Japan
    • 4.2.2.2 People' s Republic of China
    • 4.2.2.3 Singapore
    • 4.2.2.4 South Korea
    • 4.2.2.5 Taiwan
  • 4.2.3 Europe
    • 4.2.3.1 Belarus
    • 4.2.3.2 Belgium
    • 4.2.3.3 Finland
    • 4.2.3.4 France
    • 4.2.3.5 Germany
    • 4.2.3.6 Greece
    • 4.2.3.7 Hungary
    • 4.2.3.8 Italy
    • 4.2.3.9 Lithuania
    • 4.2.3.10 Poland
    • 4.2.3.11 Russia
    • 4.2.3.12 Sweden
    • 4.2.3.13 Switzerland
    • 4.2.3.14 UK
• 4.3 Government Agencies Active in Supporting Compound Semiconductor Substrate Development
  • 4.3.1 North America
    • 4.3.1.1 U.S.
    • 4.3.1.2 Canada
  • 4.3.2 Asia
    • 4.3.2.1 Japan
    • 4.3.2.2 People' s Republic of China
    • 4.3.2.3 South Korea
    • 4.3.2.4 Taiwan
  • 4.3.3 Europe
    • 4.3.3.1 France
    • 4.3.3.2 Germany
    • 4.3.3.3 Lithuania
    • 4.3.3.4 Poland
    • 4.3.3.5 Russia
    • 4.3.3.6 Sweden
    • 4.3.3.7 Switzerland
• 4.4 Mini-Profiles of Representative Companies, Research Centers, Universities, and Government Agencies Supplying Substrates or Active in Their Development
  • 4.4.1 U.S.
  • 4.4.2 Canada
  • 4.4.3 France
  • 4.4.4 Japan
  • 4.4.5 Poland
  • 4.4.6 South Korea

5. SUBSTRATE MARKETS AND MARKET FORECASTS

• 5.1 Sapphire
• 5.2 SiC
• 5.3 GaN
• 5.4 AlN
• 5.5 Si (For GaN and AlN Active Layers)

6. THE REPORT (SUMMARY)

7. BIBLIOGRAPHY (Representative Technical Papers Dealing with Sapphire, SiC, GaN, AlN, and Si Issues from 2004-2006