Abstract
Each new generation of IC devices brings about a corresponding decrease in linewidths and minimum feature sizes. The technological trends and innovations in IC fabrication processes directly influences the market for microlithography equipment. This market is the most competitive of all front-end semiconductor equipment markets, due to the high price of the equipment and the potential for high profit.
Optical methods of wafer imaging have remained the dominant force in the IC industry, despite claims made by E-beam, X-ray, and focused ion beam equipment manufacturers that even higher resolution is needed for VLSI devices. Two of the main reasons for the continual acceptance of this technology have been system maturity and the development of more effective exposure ultraviolet radiation. The current advances in optical system will eventually reach their limits, resulting in competitive marketing and technology strategies by X-ray vendors for a share of the microlithography market.
American, Japanese, and European suppliers are reviewed in this report, and the market growth is established to 2009 for step-and-scan projection aligners and step-and-repeat aligners. This report also examines and projects the technologies involved, their likely developments, what problems and choices are facing users, and where the opportunities and pitfalls are.
Current advances in optical systems could reach their limitation for 4 Gbit devices, but will continue to be a driving force. X-ray technology is being positioned to step in. However, Sematech's endorsement of EUV will push this technology to the forefront. Advances in optics, phase shift masks, and photoresists are fueling optical lithography and will further complicate the future marketplace.
The primary objective of this report is to review the current issues dealing with lithography as applied to the manufacture of VLSI devices.
Topics specifically covered include:
- Technology trends
- Products
- Applications
- Suppliers
- Markets
- Opportunities and strategies
This report examines and projects the technologies involved, their likely developments, what problems and choices are facing users, and where the opportunities and pitfalls are. The worldwide markets are analyzed and projected.
Table of Contents
Chapter 1 Introduction
- 1.1 The Need For This Report
Chapter 2 Executive Summary
- 2.1 Summary of Major Issues
- 2.2 Summary of Market Opportunities
Chapter 3 Lithography Issues And Trends
- 3.1 Optical Systems
- 3.1.1 Step-and-Repeat Aligners
- 3.1.2 248nm DUV Resist
- 3.1.3 193nm DUV Resist
- 3.1.4 Mix-and-Match
- 3.1.5 Immersion Lithography
- 3.1.6 EUV
- 3.2 X-Ray Systems
- 3.2.1 X-Ray Sources
- 3.2.2 X-Ray Masks
- 3.2.3 X-Ray Steppers
- 3.2.4 X-Ray Resists
- 3.3 Electron Beam Systems
- 3.4 Ion Beam Systems
- 3.4.1 Direct Write
- 3.4.2 Ion Channel Masking
- 3.4.3 Ion Projection
- 3.5 Nano-Imprint Lithography
- 3.6 New Technologies
- 3.6.1 Mulith Reference Distribution Aerial Image Formation
- 3.6.2 Holograms
- 3.6.3 X-Ray Laser
- 3.6.4 Atom Lithography
- 3.6.5 Microlenses
- 3.6.7 EWL Lithography
- 3.7 Evaluation of Lithography Cost of Ownership
- 3.7.1 Introduction
- 3.6.2 Cost of Ownership Model
- 3.6.3 Results of Cost of Ownership Calculation
- 3.6.4 Individual Cost Estimation
- Lithography System Cost
- Process Costs
- Mask Costs
- 3.7 Conclusion
Chapter 4 User - Supplier Strategies
- 4.1 Determining Lithography Needs
- 4.2 Benchmarking a Vendor
- 4.2.1 Pricing
- 4.2.2 Vendor Commitment and Attitudes
- 4.2.3 Vendor Capabilities
- 4.2.4 System Capabilities
- 4.2.5 Vendor Feedback During Equipment Evaluation
- 4.2.6 Vendor Feedback During Device Production
- 4.3 Competitive Environment
- 4.4 Equipment For Class 1 Cleanrooms
- 4.5 Equipment For the Factory of the Future
- 4.6 Opportunities
Chapter 5 Market Forecast
- 5.1 Driving Forces
- 5.1.1 Technical Trends
- 5.1.2 Economic Trends
- 5.1.3 Optical Limitations
- 5.2 Market Forecast Assumptions
- 5.3 Market Forecast
LIST OF FIGURES
- 1.1 Lithographic Equipment Requirements for DRAMs
- 3.1 Lithography Roadmap
- 3.2 Lens Arrangement For Submicron Features
- 3.3 Advanced Optical Lithography Scenarios
- 3.4 Mix-and-Match Approaches
- 3.5 High Index Refractive Materials
- 3.6 EUV Lithography
- 3.7 Illustration of X-Ray Lithography
- 3.8 Schematic Of Scalpel Electron Beam System
- 3.9 Multi-Source E-Beam Lithography
- 3.10 Principles of LEEPL
- 3.11 Ion Projection Lithography System
- 3.12 Hermoplastic Nanoimprint Lithography Process
- 3.13 Step And Flash Nanoimprint Lithography Process
- 3.14 Mulith Reference Distribution Aerial Image Formation
- 3.15 Schematic of Microlens
- 3.16 Mapper Mask-Based Lithography
- 3.17 Mapper Maskless Lithography
- 3.18 CoO Value in DRAM Mass Production
- 3.19 Lithography Costs for 40,000 Wafers/Mask
- 3.20 Lithography Costs for 1,000 Wafers/Mask
- 4.1 Manufacturing Costs Per Exposure Station
- 5.1 Lithography Market Vs Equipment Market
- 5.2 Lithography Requirements
- 5.3 Segmentation of Stepper/Scan Shipments
- 5.4 Market Shares of Vendors (Units)
- 5.5 Unit Market Shares of Vendors
- 5.6 Worldwide I-Line Market Shares
- 5.7 Worldwide 248nm Market Shares
- 5.8 Worldwide 193nm Market Shares
- 5.9 Market Shares of Vendors (Revenues)
LIST OF TABLES
- 3.1 Lithography Requirements for IC Production
- 3.2 Characteristics of X-Ray Systems
- 3.3 Basic Conditions of CoO Model
- 3.4 Calculation List of Lithography System Cost
- 3.5 Throughput Estimation of X-Ray Lithography
- 3.6 Cost of Reticle/X-Ray Mask
- 3.7 Phase Shift Mask and X-Ray Mask Manufacturing
- 5.1 Worldwide Capital Spending
- 5.2 DRAM Lithographic Requirements
- 5.3 Worldwide Optical Stepper Market
- 5.4 Worldwide Stepper Market Shares
