Abstract
Advantages of compound semiconductor devices over traditional silicon devices include higher
operating speeds, lower power consumption, reduced noise and distortion, higher operable
temperatures, light emitting and detecting properties, higher light emission efficiency and longer
product life, and higher energy conversion efficiency.
The systems that enable applications consist of many subsystems that incorporate individual compound
semiconductor components or devices. Each component is made with a complex of materials designed for
the application. Often, companies with their own unique leading-edge technologies are competent to
provide value-added components, subsystems and turnkey systems to meet the communications
requirements of the future.
This BCC report is the result of an extensive survey of the compound semiconductor industry. Its
focus is on recent technology development in materials and devices, and serves as an update of the
companys 1996-1997 report series. The report covers the major markets and applications for compound
semiconductor-based products and technologies. The current state of the market, as defined, is
assessed and projections for growth and advancements in technology along with market trends are
detailed.
SCOPE OF STUDY
The report contains:
- A thorough review of compound semiconductor materials: Group III and V compounds, Group II and VI compounds and Group IV silicon based compounds
- Detailed analyses of consumer, systems, subsystems and component applications and materials, with forecasts through 2009
- Examination and discussion of possible applications for compound semiconductor materials within the next five years
- Discussion of technologies and factors influencing demand
- Review of research and development efforts in U.S. government-sponsored programs, research institutions, major universities, industry R&D labs and international organizations
- Statistics on U.S. patents issued from 1996-2003 for materials, manufacturing technologies and applications
- Identification of important manufacturers.
Table of Contents
- INTRODUCTION
- STUDY GOALS AND OBJECTIVES
- REASONS FOR DOING THE STUDY
- SCOPE AND FORMAT
- METHODOLOGY AND INFORMATION SOURCES
- INTENDED AUDIENCE OF THIS REPORT
- AUTHORS CREDENTIALS
- RELATED BCC PUBLICATIONS
- REPORTS
- REVIEWS
- MONTHLY NEWSLETTERS
- BCC ON-LINE SERVICES
- DISCLAIMER
- EXECUTIVE SUMMARY
- Summary Table: WORLDWIDE COMPOUND SEMICONDUCTOR REVENUE BY MAJOR PRODUCT CATEGORY, THROUGH 2009 ($ MILLIONS)
- Summary Figure: WORLDWIDE COMPOUND SEMICONDUCTOR REVENUE BY MAJOR PRODUCT CATEGORY, 2001-2009 ($
MILLIONS)
- PRINCIPAL MARKET FORCES
- MATERIALS
- COMPONENTS
- SUBSYSTEMS
- PRINCIPAL MARKET FORCES
- OVERVIEW: MATERIAL TECHNOLOGY AND STATE OF THE INDUSTRY
- OVERVIEW OF SEMICONDUCTORS
- GENERAL PROPERTIES OF COMPOUND SEMICONDUCTORS
- Table 1 PHYSICAL PROPERTIES OF MAJOR COMPOUND SEMICONDUCTOR MATERIALS (COMPARED TO SILICON)
- Lattice Parameter
- Bandgap Engineering
- Heterostructure and Heterojunctions
- TYPES OF COMPOUND SEMICONDUCTOR MATERIALS
- Group III-V: Nitrides, Antimonides, Phosphides and Arsenides
- Gallium Arsenide
- Indium Phosphide
- Gallium Nitride
- Group II-VI: Oxides, Sulphides, Selenides and Tellurides
- Zinc Selenide
- Cadmium Telluride
- Cadmium Zinc Telluride
- Mercury Cadmium Telluride
- Group IV: Silicon-Based Compounds and Alloys
- Silicon Germanium
- Silicon Carbide
- Group III-V: Nitrides, Antimonides, Phosphides and Arsenides
- Table 2 SUMMARIES OF COMPOUND SEMICONDUCTORS
- SUBSTRATE MATERIALS
- Gallium Arsenide
- Indium Phosphide
- Silicon
- Silicon Carbide
- Germanium
- Sapphire
- Aluminum Nitride
- Free Standing Gallium Nitride Wafer
- SUBSTRATE MATERIALS
- Table 3 SUMMARY OF AVAILABLE SUBSTRATES FOR COMPOUND SEMICONDUCTOR DEVICE MANUFACTURING, 2003
- MANUFACTURING TECHNOLOGIES
- Single Crystal Production
- Czochralski (CZ) Method
- Float-Zone (FZ) Method
- Liquid-Encapsulated Czochralski (LEC) Method
- Vertical Gradient Freeze (VGF) Method
- Wafer Manufacturing
- Deposition Technologies
- Metal Organic Chemical Vapor Deposition (MOCVD)
- Molecular Beam Epitaxy (MBE)
- Other Deposition Methods
- Physical Vapor Deposition (PVD)
- Liquid Phase Epitaxy (LPE)
- Hydride Vapor Phase Epitaxy (HVPE)
- Device Manufacturing
- Front-End Processing
- Back-End Processing
- Single Crystal Production
- COMPOUND SEMICONDUCTOR MARKETPLACE
- RF/Microwave devices
- Optoelectronic Devices
- VCSELs
- Long Wavelength (1,310 nm and 1,550 nm) DFB and FP Lasers
- Photodetectors (PIN and APD)
- Light-emitting Diodes (LEDs)
- Solar Cells
- Sensors and Detectors
- Infrared Sensors and Detectors
- X and Gamma Ray Detectors
- Magnetic Field Sensors
- Hall Effect Devices
- Magnetoresistor (MR)
- MANUFACTURING TECHNOLOGIES
- Table 4 APPLICATION GRIDS OF COMPOUND SEMICONDUCTORS
- OVERVIEW OF SEMICONDUCTORS
- WORLD MARKET FOR COMPOUND SEMICONDUCTOR MATERIALS
- DEFINITION
- SUMMARY AND FORECAST OF THE COMPOUND SEMICONDUCTOR MATERIAL MARKET
- REVENUE BY CATEGORY: CRYSTAL AND WAFER VS. EPI WAFER AND FOUNDRIES
- Table 5 GLOBAL MARKET FOR COMPOUND SEMICONDUCTOR MATERIALS BY CATEGORY INCLUDING FOUNDRY SERVICES, THROUGH 2009 ($ MILLIONS)
- Figure 1 GLOBAL MARKET FOR COMPOUND SEMICONDUCTOR MATERIALS BY CATEGORY INCLUDING FOUNDRY SERVICES, THROUGH 2009 ($ MILLIONS)
- Table 6 PERCENTAGES OF COMPOUND SEMICONDUCTOR CRYSTAL AND WAFER PRODUCTS VS. EFIWAFER AND FOUNDRY SERVICES, 2001-2009
- Table 7 ESTIMATED MARKET SHARES OF COMPOUND SEMICONDUCTOR WAFER MANUFACTURERS, 2003 (%)
- Table 7 (CONTINUED)
- Table 8 ESTIMATED MARKET SHARES OF COMPOUND SEMICONDUCTOR FOUNDRIES, 2003 (%)
- REVENUES BY MATERIAL
- Table 9 GLOBAL MARKET FOR COMPOUND SEMICONDUCTOR MATERIAL PRODUCTS AND SERVICES BY MATERIAL TYPE, THROUGH 2009 ($ MILLIONS)
- Figure 2 GLOBAL MARKET FOR COMPOUND SEMICONDUCTOR MATERIAL PRODUCTS AND SERVICES BY MATERIAL TYPE, 2001-2009 ($ MILLIONS)
- Table 10 MARKET SHARE OF COMPOUND SEMICONDUCTOR PRODUCTS AND SEVICES BY MATERIAL, 2001-2009 (%)
- Gallium Arsenide
- Overview
- Gallium Arsenide
- Table 11 BASIC PHYSICAL PARAMETERS OF GALLIUM ARSENIDE (AT 300K)
- Products
- Table 12 GALLIUM ARSENIDE CRYSTAL AND WAFER PRODUCERS
- Table 12 (CONTINUED)
- Table 13 MAJOR GALLIUM ARSENIDE EPIWAFER PRODUCERS (FOUNDRIES)
- Forecast of Gallium Arsenide Material Markets
- Table 14 GLOBAL MARKET FOR GALLIUM ARSENIDE BY CATEORY, THROUGH 2009 ($ MILLIONS)
- Indium Phosphide
- Overview
- Indium Phosphide
- Table 15 BASIC PHYSICAL PARAMETERS OF INDIUM PHOSPHIDE (AT 300K)
- Products
- Table 16 INDIUM PHOSPHIDE CRYSTAL AND WAFER PRODUCERS
- Table 17 MAJOR INDIUM PHOSPHIDE EPIWAFER PRODUCERS (FOUNDRIES)
- Forecast of Indium Phosphide Material Markets
- Table 18 GLOBAL MARKET FOR INDIUM PHOSPHIDE, THROUGH 2009 ($ MILLIONS)
- Gallium Nitride
- Overview
- Gallium Nitride
- Table 19 BASIC PHYSICAL PARAMETERS OF GALLIUM NITRIDE (AT 300K)
- Optical Devices
- Electrical Devices
- Table 20 GALLIUM NITRIDE BASED DEVICES
- Products
- Products (continued)
- Products
- Table 21 PARTIAL LIST OF COMPANIES WITH GALLIUM NITRIDE PRODUCTS
- Forecast of Gallium Nitride Material Market
- Table 22 GLOBAL MARKET FOR GALLIUM NITRIDE MATERIAL PRODUCT MARKET, THROUGH 2009 ($ MILLIONS)
- Silicon Germanium
- Overview
- Silicon Germanium
- Table 23 BASIC PHYSICAL PARAMETERS OF SILICON, GERMANIUM AND SILICON GERMANIUM ALLOYS (AT 300K)
- Foundry Services
- Table 24 MAJOR SILICON GERMANIUM BICMOS FOUNDRIES
- Forecast of Silicon Germanium Related Service Market
- Table 25 GLOBAL MARKET FOR SILICON GERMANIUM FOUNDRY RELATED SERVICES, THROUGH 2009 ($ MILLIONS)
- Silicon Carbide
- Overview
- Silicon Carbide
- Table 26 BASIC PHYSICAL PARAMETERS OF SILICON CARBIDE (AT 300K)
- Table 27 SILICON CARBIDE BASED DEVICES (POTENTIAL OR EXISTING)
- Table 27 (CONTINUED)
- Products
- Table 28 MAJOR MANUFACTURERS OF SILICON CARBIDE SUBSTRATES
- Forecast of Silicon Carbide Material Markets
- Table 29 GLOBAL MARKET FOR SILICON CARBIDE MATERIAL REVENUE, THROUGH 2009 ($ MILLIONS)
- Other Materials
- Summary and Outlook
- Forecast of Other Compound Semiconductor and Related Materials
- Other Materials
- Table 30 GLOBAL MARKET FOR OTHER COMPOUND SEMICONDUCTOR AND RELATED MATERIALS, THROUGH 2009 ($ MILLIONS)
- WORLD MARKET FOR COMPOUND SEMICONDUCTOR BASED COMPONENTS
- DEFINITION
- SUMMARY AND FORECAST OF COMPOUND SEMICONDUCTOR COMPONENT MARKET
- Table 31 GLOBAL MARKET FOR COMPOUND SEMICONDUCTOR BASED COMPONENTS AND DEVICES, THROUGH 2009 ($ MILLIONS)
- Table 32 PERCENTAGES OF COMPOUND SEMICONDUCTOR BASED COMPONENTS BY SUBCATEGORY, 2001-2009 (%)
- RF AND MICROWAVE COMPONENTS
- Overview of Applications
- RF AND MICROWAVE COMPONENTS
- Table 33 RADIO FREQUENCY BAND AND CORRESPONDENT WAVELENGTH
- Cellular Network
- Table 34 DIGITAL CELLULAR PHONE NETWORK PROTOCOLS
- Wireless Local Area Network (WLAN) and Bluetooth
- Table 35 WIRELESS NETWORKING STANDARDS
- Automotive Radar
- Basic building blocks of RF communication Systems
- Process Technologies
- Monolithic Microwave Integrated Circuits (MMIC)
- Field Effect Transistors
- JFET
- MOSFET
- MESFET
- HEMT and pHEMT
- Bipolar Junction Transistors
- Heterojunction Bipolar Transistor (HBT)
- Table 36 MAJOR MANUFACTURERS OF COMPOUND SEMICONDUCTOR RF COMPONENTS
- Table 36 (CONTINUED)
- Table 36 (CONTINUED)
- Table 37 MARKET SHARES OF MAJOR COMPOUND SEMICONDUCTOR RF COMPONENT MANUFACTURERS, 2003
- OPTOELECTRONIC COMPONENTS
- Overview of Applications
- Optical Communications Network
- Overview of Applications
- OPTOELECTRONIC COMPONENTS
- Table 38 OPTICAL CARRIER LEVELS
- Optical Wireless and Free Space Optics Communications
- Next Generation Optical Information Storage
- Table 39 COMPARISONS OF CD-ROM, DVD AND BLU-RAY DISC
- Solid State Lighting
- Laser Diodes
- Edge-Emitting Laser Diodes
- Fabry-Perot (FP) Laser
- Distributed Feedback (DFB) Laser
- Vertical Cavity Surface Emitting Laser (VCSEL)
- Edge-Emitting Laser Diodes
- Superluminescent Diodes (SLDs)
- Photodiodes
- PIN Photodiodes
- Avalanche Photodiodes (APD)
- Integrated Optical Circuits (IOC) And Photonic Integrated Circuits (PIC)
- Table 40 MAJOR MANUFACTURERS OF OPTOELECTRONIC COMPONENTS
- Table 40 (CONTINUED)
- Table 40 (CONTINUED)
- Light-emitting Diodes (LEDs)
- Early Generations of LEDs
- Light-emitting Diodes (LEDs)
- Table 41 WAVELENGTH AND COLOR OF GaP BASED LEDS
- High Brightness LEDs
- Short Wavelength (Green, Blue and Violet) LEDs
- Table 42 TYPICAL MATERIALS, WAVELENGTHS AND COLORS OF LEDS
- Table 42 (CONTINUED)
- White LEDs
- Gallium Nitride-Based White LED
- Zinc Selenide-Based White LED
- Infrared Emitting Diodes (IREDs)
- White LEDs
- Table 43 NEAR INFRARED EMITTING DIODES
- Ultraviolet (UV) LEDs
- Lead Mount vs. Surface Mount (SMD) LEDs
- Applications of LEDs and Current Market Conditions
- Applications of LEDs and・continued)
- Table 44 MAJOR MANUFACTURERS OF LED COMPONENTS FOR LIGHTING AND ILLUMINATION (IN ADDITION TO THOSE INCLUDED IN TABLE 39)
- Table 44 (CONTINUED)
- Table 45 ESTIMATED MARKET SHARES OF MAJOR COMPOUND SEMICONDUCTOR OPTOELECTRONIC COMPONENT
MANUFACTURERS, 2003
- SENSOR AND DETECTOR COMPONENTS
- Infrared Sensors and Thermal Image Arrays
- Infrared Sensor Materials
- Indium Gallium Arsenide
- Indium Antimonide
- Mercury Cadmium Telluride
- IR Detector Arrays
- Magnetic Field Sensors
- Hall Effect Devices
- Magnetoresistors (MR)
- X- And Gamma Ray Detectors
- SENSOR AND DETECTOR COMPONENTS
- Table 46 MAJOR MANUFACTURERS OF COMPOUND SEMICONDUCTOR SENSOR AND DETECTOR COMPONENTS
- Table 47 ESTIMATED MARKET SHARES OF MAJOR MANUFACTURERS OF COMPOUND SEMICONDUCTOR SENSORS, 2003
- WORLD MARKET FOR COMPOUND SEMICONDUCTOR INTEGRATED SUBSYSTEMS
- DEFINITION
- SUMMARY AND FORECAST OF COMPOUND SEMICONDUCTOR SUBSYSTEMS MARKET
- Table 48 GLOBAL MARKET FOR COMPOUND SEMICONDUCTOR INTEGRATED SUBSYSTEMS BY SUBCATEGORIES, THROUGH 2009 ($ MILLIONS)
- Figure 3 GLOBAL MARKET FOR COMPOUND SEMICONDUCTOR INTEGRATED SUBSYSTEMS BY SUBCATEGORIES, 2001-2009 ($ MILLIONS)
- Table 49 REVENUE PERCENTAGES OF COMPOUND SEMICONDUCTOR INTEGRATED SUBSYSTEMS BY SUBCATEGORIES,
2001-2009
- RF AND MICROWAVE SUBSYSTEMS
- Transceiver and Power Amplifier Modules for Cellular Handsets and Bluetooth Devices
- Network Infrastructure (Point-to Point, Point-to-Multipoint Transceivers, Outdoor Units)
- WLAN Power Amplifiers and Transceivers
- RF AND MICROWAVE SUBSYSTEMS
- Table 50 MAJOR MANUFACTURERS OF COMPOUND SEMICONDUCTOR RF AND MICROWAVE SUBSYSTEMS
- Table 51 ESTIMATED MARKET SHARES OF MAJOR RF SUBSYSTEM MANUFACTURERS, 2003
- OPTOELECTRONIC SUBSYSTEMS
- Optical Transceivers
- Small Form-Factor Pluggable (SFP) Transceiver
- Gigabit Interface Converter (GBIC)
- Tunable Lasers
- Optical Transceivers
- OPTOELECTRONIC SUBSYSTEMS
- Table 52 MAJOR MANUFACTURERS OF COMPOUND SEMICONDUCTOR OPTOELECTRONIC SUBSYSTEMS
- Table 52 (CONTINUED)
- Table 53 ESTIMATED MARKET SHARES OF MAJOR OPTOELECTRONIC SUBSYSTEM MANUFACTURERS (EXCLUDING
SOLID STATE LIGHTING), 2003
- LED Display Modules and Solid State Lighting Products
- LED Displays
- Solid State Lighting
- LED Display Modules and Solid State Lighting Products
- Table 54 MANUFACTURERS OF SOLID STATE LIGHTING AND DISPLAY PRODUCTS
- Table 54 (CONTINUED)
- COMPOUND SEMICONDUCTOR SOLAR MODULES
- Conversion Efficiencies
- Solar Cell Materials
- Silicon
- III-V Compounds
- CdS/CdTe Polycrystalline Thin Films
- COMPOUND SEMICONDUCTOR SOLAR MODULES
- Table 55 MANUFACTURERS OF COMPOUND SEMICONDUCTOR SOLAR MODULES
- COMPOUND SEMICONDUCTOR TECHNOLOGY ANALYSIS
- OVERVIEW OF PATENTS AND PATENT APPLICATIONS, USPTO, 1996-2003
- Table 56 USPTO COMPOUND SEMICONDUCTOR RELATED PATENTS AND PUBLISHED APPLICATIONS BY YEAR, 1996-2003
- Figure 4 USPTO COMPOUND SEMICONDUCTOR RELATED PATENTS AND PUBLISHED APPLICATIONS BY YEAR,
1996-2003
- Patents
- Table 57 COMPOUND SEMICONDUCTOR RELATED PATENTS ISSUED BY MATERIAL, THROUGH 2003
- Figure 5 COMPOUND SEMICONDUCTOR RELATED PATENTS ISSUED BY MATERIAL, 1996-2003
- Published Patent Applications
- Table 58 COMPOUND SEMICONDUCTOR RELATED PUBLISHED PATENT APPLICATIONS BY MATERIAL, 1996-2003
- Figure 6 COMPOUND SEMICONDUCTOR RELATED PUBLISHED PATENT APPLICATIONS BY MATERIAL, 1996-2003
- Table 59 PERCENTAGE SHARE OF MATERIALS BY TYPE IN PATENTS AND PENDING PUBLISHED APPLICATIONS, AND DIFFERENCE IN PERCENTAGES, 1996-2003
- Figure 7 PERCENTAGES OF PATENTS AND PUBLISHED PENDING APPLICATIONS BY MATERIAL, 1996-2003
- Patent Classification
- PATENT ANALYSIS BY MATERIAL
- Gallium Arsenide
- Table 60 GALLIUM ARSENIDE-RELATED PATENTS BY CLASSIFICATIONS, 1996-2003
- Table 61 COMPANIES WITH SIGNIFICANT AMOUNT OF GALLIUM ARSENIDE RELATED PATENTS, AWARDED
1996-2003
- Indium Phosphide
- Table 62 INDIUM PHOSPHIDE RELATED PATENTS BY CLASSIFICATIONS, 1996-2003
- Table 63 COMPANIES WITH SIGNIFICANT AMOUNT OF INDIUM PHOSPHIDE RELATED PATENTS, AWARDED 1996-2003
- Table 63 (CONTINUED)
- Gallium Nitride And Group III Nitrides
- Table 64 GALLIUM NITRIDE AND GROUP III NITRIDES RELATED PATENTS BY CLASSIFICATIONS, 1996-2003
- Table 65 COMPANIES WITH SIGNIFICANT AMOUNT OF GALLUIM NITRIDE AND GROUP III NITRIDES RELATED
PATENTS, AWARDED 1996-2003
- Silicon Carbide
- Table 66 SILICON CARBIDE RELATED PATENTS BY CLASSIFICATIONS, 1996-2003
- Table 67 COMPANIES WITH SIGNIFICANT AMOUNT OF SILICON CARBIDE RELATED PATENTS, AWARDED 1996-2003
- Silicon Germanium
- Table 68 SILICON GERMANIUM-RELATED PATENTS BY CLASSIFICATIONS, 1996-2003
- Table 69 COMPANIES WITH SIGNIFICANT AMOUNT OF SILICON GERMANIUM RELATED PATENTS, AWARDED 1996-2003
- Table 70 MAJOR COMPANIES WITH LARGEST NUMBER OF COMPOUND SEMICONDUCTOR RELATED PATENTS BY MATERIAL
- COMPANY PROFILES
- COMPOUND SEMICONDUCTOR-RELATED RESEARCH AT LEADING INDUSTRY R&D LABS
- GE GLOBAL RESEARCH
- HRL LABORATORIES
- IBM RESEARCH
- NORTHROP GRUMMAN ELECTRONIC SYSTEMS
- ELECTRONIC MATERIALS LABORATORY, XEROX PALO ALTO RESEARCH CENTER
- SEMICONDUCTOR RESEARCH LABORATORY, LUCENT BELL LABS
- FREESCALE SEMICONDUCTOR R&D LABS (FORMERLY MOTOROLA)
- SEMICONDUCTOR ENERGY LABORATORY CO. LTD.
- NEC COMPOUND SEMICONDUCTOR DEVICES R&D
- SIEMENS AG RESEARCH AND DEVELOPMENT
- DOW CORNING COMPOUND SEMICONDUCTOR SOLUTIONS
- PROFILES OF GOVERNMENT SPONSORED RESEARCH LABS AND PROGRAMS-UNITED STATES
- MATERIALS AND MANUFACTURING DIRECTORATE (ML), AIR FORCE RESEARCH LABORATORY
- DEFENSE ADVANCED RESEARCH PROJECTS AGENCY (DARPA)
- NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY
- Semiconductor Electronics Division, Gaithersburg, MD
- Optoelectronics Division (Boulder, CO)
- OFFICE OF NAVAL RESEARCH
- Electronics Division
- Funding Programs Concerning Compound Semiconductors:
- COMPOUND SEMICONDUCTOR RESEARCH LABORATORY (CSRL), SANDIA NATIONAL LABORATORIES
- THE SENSORS AND ELECTRON DEVICES DIRECTORATE, U.S. ARMY RESEARCH LABORATORY
- U.S. ARMY RESEARCH OFFICE
- DIVISION OF MATERIALS RESEARCH, NATIONAL SCIENCE FOUNDATION
- PROFILES OF GOVERNMENT SPONSORED RESEARCH LABS AND PROGRAMS-OTHER COUNTRIES
- ENGINEERING AND PHYSICAL SCIENCES RESEARCH COUNCIL, UK
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, JAPAN
- Power Electronics Research Center
- Research Center for Photovoltatics
- NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATION TECHNOLOGY, JAPAN
- IOFFE PHYSICO-TECHNICAL INSTITUTE, RUSSIA
- Division of Solid State Electronics
- Division of Physics of Dielectric And Semiconductors
- INSTITUTE OF SEMICONDUCTORS, CHINESE ACADEMY OF SCIENCES, CHINA
- FORSCHUNGSZENTRUM JULICH (RESEARCH CENTRE JULICH), GERMANY
- Institute of Thin Films and Interfaces
- PROFILES OF SELECTED UNIVERSITY RESEARCH LABS-UNITED STATES
- CENTER FOR SOLID STATE ELECTRONICS RESEARCH (CSSER), ARIZONA STATE UNIVERSITY
- DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING, BOSTON UNIVERSITY
- Wide Band Gap Semiconductors Laboratory (www.bu.edu/nitrides/)
- STM/MBE GROUP, CARNEGIE MELLON UNIVERSITY
- ELECTRICAL AND COMPUTER ENGINEERING, CORNELL UNIVERSITY
- Electronic and optoelectronic materials research
- Optoelectronic, optical and laser devices research
- MICROELECTRONICS RESEARCH CENTER, GEORGIA INSTITUTE OF TECHNOLOGY
- CENTER FOR MATERIALS SCIENCE AND ENGINEERING, MASSACHUSETTS INSTITUTE OF TECHNOLOGY
- Compound Semiconductor Materials and Device Research Group
- ELECTRICAL AND COMPUTER ENGINEERING, OHIO STATE UNIVERSITY
- Solid State Electronics and Photonics
- DEPARTMENT OF MATERIALS SCIENCE AND ENGINEERING, PENNSYLVANIA STATE UNIVERSITY
- WIDE BAND GAP SEMICONDUCTOR DEVICE RESEARCH PROGRAM, PURDUE UNIVERSITY
- DEPARTMENT OF ELECTRICAL ENGINEERING, STANFORD UNIVERSITY
- MATERIALS SCIENCE AND ENGINEERING, UNIVERSITY OF CALIFORNIA-BERKELEY
- FIBER OPTICS AND COMPOUND SEMICONDUCTOR LABORATORY, UNIVERSITY OF CALIFORNIA-IRVINE
- UNIVERSITY OF CALIFORNIA-SANTA BARBARA
- Optoelectronics Technology Center (OTC)
- Interdisciplinary Center for Wide Bandgap Semiconductors and The Solid State Lighting and Display Center
- OPTOELECTRONICS GROUP, UNIVERSITY OF CALIFORNIA-LOS ANGLES
- MICRO AND NANOTECHNOLOGY LABORATORY, UNIVERSITY OF ILLINOIS AT URBANA-CHAMPAIGN
- CENTER FOR OPTOELECTRONIC DEVICES, INTERCONNECTS, AND PACKAGING - UNIVERSITY OF MARYLAND
- SEMICONDUCTOR SPECTROSCOPY LABORATORY, ELECTRICAL AND COMPUTER ENGINEERING DEPARTMENT, UNIVERSITY OF MASSACHUSETTS AT AMHERST
- SOLID-STATE ELECTRONICS LABORATORY, UNIVERSITY OF MICHIGAN
- III-V Integrated Devices and Circuits Group
- PHOTONICS AND MICROELECTRONICS LABORATORY, UNIVERSITY OF SOUTH CAROLINA
- UNIVERSITY OF SOUTHERN CALIFORNIA
- Compound Semiconductor Laboratory
- THE CENTER FOR MICROELECTRONIC MATERIALS AND STRUCTURES, YALE UNIVERSITY
- ELECTRICAL AND COMPUTER ENGINEERING, CORNELL UNIVERSITY
- PROFILES OF SELECTED UNIVERSITY RESEARCH LABS-OTHER COUNTRIES
- SCHOOL OF ELECTRICAL, ELECTRONIC AND COMPUTER ENGINEERING, UNIVERSITY OF WESTERN AUSTRALIA,
AUSTRALIA
- Microelectronics Research Group
- COMPOUND SEMICONDUCTOR LABORATORY, SIMON FRASER UNIVERSITY, CANADA
- ELECTRICAL AND ELECTRONIC ENGINEERING, HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY, CHINA
- GROUP OF RESEARCH ON GAN-RELATED MATERIALS AND DEVICES, PEKING UNIVERSITY, CHINA
- INSTITUTE OF SOLID STATE PHYSICS, TECHNICAL UNIVERSITY OF BERLIN, GERMANY
- WALTER SCHOTTKY INSTITUTE, TECHNICAL UNIVERSITY OF MUNICH, GERMANY
- NAGOYA INSTITUTE OF TECHNOLOGY, RESEARCH CENTER FOR NANO-DEVICE AND SYSTEM, NAGOYA UNIVERSITY, JAPAN
- THE INSTITUTE OF SCIENTIFIC AND INDUSTRIAL RESEARCH, OSAKA UNIVERSITY, JAPAN
- LABORATORY FOR NANOELECTRONICS AND SPINTRONICS, RESEARCH INSTITUTE OF ELECTRICAL COMMUNICATION, TOHOKO UNIVERSITY, JAPAN
- COMPOUND SEMICONDUCTOR PROCESS LABORATORY, POHANG UNIVERSITY OF SCIENCE AND TECHNOLOGY, KOREA
- SCHOOL OF ELECTRICAL AND ELECTRONIC ENGINEERING, NANYANG TECHNICAL UNIVERSITY, SINGAPORE
- INSTITUTE OF QUANTUM ELECTRONIC AND PHOTONICS (INSTITUT DE PHOTONIQUE ET DELECTRONIQUE QUANTIQUES), SWISS FEDERAL INSTITUTE OF TECHNOLOGY LAUSANNE (EPFL), SWITZERLAND
- COMPOUND SEMICONDUCTOR TECHNOLOGIES INITIATIVE, GLASGOW AND STRATHCLYDE UNIVERSITIES, UK
- UNIVERSITY OF CAMBRIDGE, UK
- Sige Research, Cavendish Laboratory
- OPTOELECTRONIC MATERIALS AND DEVICES LABORATORY, UNIVERSITY OF ESSEX, UK
- SPACE RESEARCH CENTRE, UNIVERSITY OF LEICESTER, UK
- SEMICONDUCTOR PHYSICS GROUP, UNIVERSITY OF SHEFFIELD, UK
- MICROELECTRONICS GROUP, UNIVERSITY OF SOUTHAMPTON, UK
- OPTOELECTRONICS DEVICES AND MATERIALS GROUP, DEPARTMENT OF PHYSICAL SCIENCE, UNIVERSITY OF SURREY, UK
- SCHOOL OF ELECTRICAL, ELECTRONIC AND COMPUTER ENGINEERING, UNIVERSITY OF WESTERN AUSTRALIA,
AUSTRALIA
- COMPOUND SEMICONDUCTOR-RELATED RESEARCH AT LEADING INDUSTRY R&D LABS
- Summary Table:
- Table 1 PHYSICAL PROPERTIES OF MAJOR COMPOUND SEMICONDUCTOR MATERIALS (COMPARED TO SILICON)
- Table 2 SUMMARIES OF COMPOUND SEMICONDUCTORS
- Table 3 SUMMARY OF AVAILABLE SUBSTRATES FOR COMPOUND SEMICONDUCTOR DEVICE MANUFACTURING, 2003
- Table 4 APPLICATION GRIDS OF COMPOUND SEMICONDUCTORS
- Table 5 GLOBAL MARKET FOR COMPOUND SEMICONDUCTOR MATERIALS BY CATEGORY INCLUDING FOUNDRY SERVICES, THROUGH 2009 ($ MILLIONS)
- Table 6 PERCENTAGES OF COMPOUND SEMICONDUCTOR CRYSTAL AND WAFER PRODUCTS VS. EFIWAFER AND FOUNDRY SERVICES, 2001-2009
- Table 7 ESTIMATED MARKET SHARES OF COMPOUND SEMICONDUCTOR WAFER MANUFACTURERS, 2003 (%)
- Table 8 ESTIMATED MARKET SHARES OF COMPOUND SEMICONDUCTOR FOUNDRIES, 2003 (%)
- Table 9 GLOBAL MARKET FOR COMPOUND SEMICONDUCTOR MATERIAL PRODUCTS AND SERVICES BY MATERIAL TYPE, THROUGH 2009 ($ MILLIONS)
- Table 10 MARKET SHARE OF COMPOUND SEMICONDUCTOR PRODUCTS AND SEVICES BY MATERIAL, 2001-2009 (%)
- Table 11 BASIC PHYSICAL PARAMETERS OF GALLIUM ARSENIDE (AT 300K)
- Table 12 GALLIUM ARSENIDE CRYSTAL AND WAFER PRODUCERS
- Table 13 MAJOR GALLIUM ARSENIDE EPIWAFER PRODUCERS (FOUNDRIES)
- Table 14 GLOBAL MARKET FOR GALLIUM ARSENIDE BY CATEORY, THROUGH 2009 ($ MILLIONS)
- Table 15 BASIC PHYSICAL PARAMETERS OF INDIUM PHOSPHIDE (AT 300K)
- Table 16 INDIUM PHOSPHIDE CRYSTAL AND WAFER PRODUCERS
- Table 17 MAJOR INDIUM PHOSPHIDE EPIWAFER PRODUCERS (FOUNDRIES)
- Table 18 GLOBAL MARKET FOR INDIUM PHOSPHIDE, THROUGH 2009 ($ MILLIONS)
- Table 19 BASIC PHYSICAL PARAMETERS OF GALLIUM NITRIDE (AT 300K)
- Table 20 GALLIUM NITRIDE BASED DEVICES
- Table 21 PARTIAL LIST OF COMPANIES WITH GALLIUM NITRIDE PRODUCTS
- Table 22 GLOBAL MARKET FOR GALLIUM NITRIDE MATERIAL PRODUCT MARKET, THROUGH 2009 ($ MILLIONS)
- Table 23 BASIC PHYSICAL PARAMETERS OF SILICON, GERMANIUM AND SILICON GERMANIUM ALLOYS (AT 300K)
- Table 24 MAJOR SILICON GERMANIUM BICMOS FOUNDRIES
- Table 25 GLOBAL MARKET FOR SILICON GERMANIUM FOUNDRY RELATED SERVICES, THROUGH 2009 ($ MILLIONS)
- Table 26 BASIC PHYSICAL PARAMETERS OF SILICON CARBIDE (AT 300K)
- Table 27 SILICON CARBIDE BASED DEVICES (POTENTIAL OR EXISTING)
- Table 28 MAJOR MANUFACTURERS OF SILICON CARBIDE SUBSTRATES
- Table 29 GLOBAL MARKET FOR SILICON CARBIDE MATERIAL REVENUE, THROUGH 2009 ($ MILLIONS)
- Table 30 GLOBAL MARKET FOR OTHER COMPOUND SEMICONDUCTOR AND RELATED MATERIALS, THROUGH 2009 ($ MILLIONS)
- Table 31 GLOBAL MARKET FOR COMPOUND SEMICONDUCTOR BASED COMPONENTS AND DEVICES, THROUGH 2009 ($ MILLIONS)
- Table 32 PERCENTAGES OF COMPOUND SEMICONDUCTOR BASED COMPONENTS BY SUBCATEGORY, 2001-2009 (%)
- Table 33 RADIO FREQUENCY BAND AND CORRESPONDENT WAVELENGTH
- Table 34 DIGITAL CELLULAR PHONE NETWORK PROTOCOLS
- Table 35 WIRELESS NETWORKING STANDARDS
- Table 36 MAJOR MANUFACTURERS OF COMPOUND SEMICONDUCTOR RF COMPONENTS
- Table 37 MARKET SHARES OF MAJOR COMPOUND SEMICONDUCTOR RF COMPONENT MANUFACTURERS, 2003
- Table 38 OPTICAL CARRIER LEVELS
- Table 39 COMPARISONS OF CD-ROM, DVD AND BLU-RAY DISC
- Table 40 MAJOR MANUFACTURERS OF OPTOELECTRONIC COMPONENTS
- Table 41 WAVELENGTH AND COLOR OF GaP BASED LEDS
- Table 42 TYPICAL MATERIALS, WAVELENGTHS AND COLORS OF LEDS
- Table 43 NEAR INFRARED EMITTING DIODES
- Table 44 MAJOR MANUFACTURERS OF LED COMPONENTS FOR LIGHTING AND ILLUMINATION (IN ADDITION TO THOSE INCLUDED IN TABLE 39)
- Table 45 ESTIMATED MARKET SHARES OF MAJOR COMPOUND SEMICONDUCTOR OPTOELECTRONIC COMPONENT MANUFACTURERS, 2003
- Table 46 MAJOR MANUFACTURERS OF COMPOUND SEMICONDUCTOR SENSOR AND DETECTOR COMPONENTS
- Table 47 ESTIMATED MARKET SHARES OF MAJOR MANUFACTURERS OF COMPOUND SEMICONDUCTOR SENSORS, 2003
- Table 48 GLOBAL MARKET FOR COMPOUND SEMICONDUCTOR INTEGRATED SUBSYSTEMS BY SUBCATEGORIES, THROUGH 2009 ($ MILLIONS)
- Table 49 REVENUE PERCENTAGES OF COMPOUND SEMICONDUCTOR INTEGRATED SUBSYSTEMS BY SUBCATEGORIES, 2001-2009
- Table 50 MAJOR MANUFACTURERS OF COMPOUND SEMICONDUCTOR RF AND MICROWAVE SUBSYSTEMS
- Table 51 ESTIMATED MARKET SHARES OF MAJOR RF SUBSYSTEM MANUFACTURERS, 2003
- Table 52 MAJOR MANUFACTURERS OF COMPOUND SEMICONDUCTOR OPTOELECTRONIC SUBSYSTEMS
- Table 53 ESTIMATED MARKET SHARES OF MAJOR OPTOELECTRONIC SUBSYSTEM MANUFACTURERS (EXCLUDING SOLID STATE LIGHTING), 2003
- Table 54 MANUFACTURERS OF SOLID STATE LIGHTING AND DISPLAY PRODUCTS
- Table 55 MANUFACTURERS OF COMPOUND SEMICONDUCTOR SOLAR MODULES
- Table 56 USPTO COMPOUND SEMICONDUCTOR RELATED PATENTS AND PUBLISHED APPLICATIONS BY YEAR, 1996-2003
- Table 57 COMPOUND SEMICONDUCTOR RELATED PATENTS ISSUED BY MATERIAL, THROUGH 2003
- Table 58 COMPOUND SEMICONDUCTOR RELATED PUBLISHED PATENT APPLICATIONS BY MATERIAL, 1996-2003
- Table 59 PERCENTAGE SHARE OF MATERIALS BY TYPE IN PATENTS AND PENDING PUBLISHED APPLICATIONS, AND DIFFERENCE IN PERCENTAGES, 1996-2003
- Table 60 GALLIUM ARSENIDE-RELATED PATENTS BY CLASSIFICATIONS, 1996-2003
- Table 61 COMPANIES WITH SIGNIFICANT AMOUNT OF GALLIUM ARSENIDE RELATED PATENTS, AWARDED 1996-2003
- Table 62 INDIUM PHOSPHIDE RELATED PATENTS BY CLASSIFICATIONS, 1996-2003
- Table 63 COMPANIES WITH SIGNIFICANT AMOUNT OF INDIUM PHOSPHIDE RELATED PATENTS, AWARDED 1996-2003
- Table 64 GALLIUM NITRIDE AND GROUP III NITRIDES RELATED PATENTS BY CLASSIFICATIONS, 1996-2003
- Table 65 COMPANIES WITH SIGNIFICANT AMOUNT OF GALLUIM NITRIDE AND GROUP III NITRIDES RELATED PATENTS, AWARDED 1996-2003
- Table 66 SILICON CARBIDE RELATED PATENTS BY CLASSIFICATIONS, 1996-2003
- Table 67 COMPANIES WITH SIGNIFICANT AMOUNT OF SILICON CARBIDE RELATED PATENTS, AWARDED 1996-2003
- Table 68 SILICON GERMANIUM-RELATED PATENTS BY CLASSIFICATIONS, 1996-2003
- Table 69 COMPANIES WITH SIGNIFICANT AMOUNT OF SILICON GERMANIUM RELATED PATENTS, AWARDED 1996-2003
- Table 70 MAJOR COMPANIES WITH LARGEST NUMBER OF COMPOUND SEMICONDUCTOR RELATED PATENTS BY MATERIAL
- Summary Figure:
- Figure 1 GLOBAL MARKET FOR COMPOUND SEMICONDUCTOR MATERIALS BY CATEGORY INCLUDING FOUNDRY SERVICES, THROUGH 2009 ($ MILLIONS)
- Figure 2 GLOBAL MARKET FOR COMPOUND SEMICONDUCTOR MATERIAL PRODUCTS AND SERVICES BY MATERIAL TYPE, 2001-2009 ($ MILLIONS)
- Figure 3 GLOBAL MARKET FOR COMPOUND SEMICONDUCTOR INTEGRATED SUBSYSTEMS BY SUBCATEGORIES, 2001-2009 ($ MILLIONS)
- Figure 4 USPTO COMPOUND SEMICONDUCTOR RELATED PATENTS AND PUBLISHED APPLICATIONS BY YEAR, 1996-2003
- Figure 5 COMPOUND SEMICONDUCTOR RELATED PATENTS ISSUED BY MATERIAL, 1996-2003
- Figure 6 COMPOUND SEMICONDUCTOR RELATED PUBLISHED PATENT APPLICATIONS BY MATERIAL, 1996-2003
- Figure 7 PERCENTAGES OF PATENTS AND PUBLISHED PENDING APPLICATIONS BY MATERIAL, 1996-2003


